公开(公告)号：US20240290571A1

公开(公告)日：2024-08-29

申请号：US18115688

申请日：2023-02-28

Applicant: ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH

Inventor： Benjamin Cook ,  Pieter Kruit

IPC: H01J37/147 ,  H01J37/145 ,  H01J37/20 ,  H01J37/28

CPC classification number: H01J37/1474 ,  H01J37/145 ,  H01J37/20 ,  H01J37/28 ,  H01J2237/0475 ,  H01J2237/1501 ,  H01J2237/151 ,  H01J2237/152 ,  H01J2237/2803

Abstract: A charged particle optics for a charged particle beam apparatus having a charged particle beam and a beam propagation direction of the charged particle beam apparatus is described. The charged particle optics includes a focusing lens. The focusing lens includes a first electrode with a first aperture; a second electrode with a second aperture, the second electrode being mechanically movable at least in a first direction perpendicular to the beam propagation direction; and an actuator coupled to the second electrode to move the second electrode in at least the first direction for displacement of the second aperture with respect to the first aperture. The charged particle optics further includes a deflection system positioned upstream of the second electrode to deflect the charged particle beam, based on the displacement, to guide the charged particle beam through the second aperture.

公开(公告)号：US20230207251A1

公开(公告)日：2023-06-29

申请号：US18167991

申请日：2023-02-13

Applicant: Carl Zeiss MultiSEM GmbH

Inventor： Stefan Schubert

IPC: H01J37/147 ,  H01J37/244 ,  H01J37/143

CPC classification number: H01J37/1478 ,  H01J37/244 ,  H01J37/143 ,  H01J2237/1035 ,  H01J2237/152 ,  H01J2237/153 ,  H01J2237/1502

Abstract: A multiple particle beam system comprises a magnetic immersion lens and a detection system. A cross-over of the second individual particle beams is provided in the secondary path between the beam switch and the detection system, and a contrast aperture with a central cutout for cutting out the secondary beams is arranged in the region of the cross-over. A contrast correction lens system with a first magnetic contrast correction lens is arranged between the objective lens and the contrast aperture. The contrast correction lens system is configured to generate a magnetic field with an adjustable strength and correct beam tilts of the secondary beams in the cross-over in relation to the optical axis of the multiple particle beam system. It is possible to obtain a more uniform contrast for different individual images and the contrast can be improved overall.

公开(公告)号：US20180254167A1

公开(公告)日：2018-09-06

申请号：US15872570

申请日：2018-01-16

Applicant: Dongfang Jingyuan Electron Limited

Inventor： Yan Zhao ,  Weiqiang Sun ,  Tao Feng

IPC: H01J37/147 ,  H01J37/20 ,  H01J37/22 ,  H01J37/12 ,  H01J37/244 ,  H01J37/145 ,  H01J37/28

CPC classification number: H01J37/1475 ,  H01J37/09 ,  H01J37/12 ,  H01J37/145 ,  H01J37/20 ,  H01J37/222 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/04 ,  H01J2237/0453 ,  H01J2237/152 ,  H01J2237/202 ,  H01J2237/20285 ,  H01J2237/221 ,  H01J2237/24475 ,  H01J2237/24592 ,  H01J2237/2817

Abstract: A method for imaging a surface of a substrate using a multi-beam imaging system includes: modifying an electron beam using a multipole-field device; generating beamlets from the electron beam using a beam-splitting device having multiple apertures; in response to projecting foci of the beamlets onto the surface, driving the beamlets using a deflector set to scan a region of the surface for receiving signals based on electrons scattered from the region; and determining an image of the region for inspection based on the signals. The multi-beam imaging system includes: an electron source; a first multipole-field device for beam shaping and beam aberration correction; a beam-splitting device; a projection lens set; a deflector set; an objective lens set; a detector array; a second multipole-field device; a processor; and a memory storing instructions to determine an image of the region for inspection based on the signals.

公开(公告)号：US20180233316A1

公开(公告)日：2018-08-16

申请号：US15751606

申请日：2017-04-05

Applicant: STATE ENTERPRISE "INTERNATIONAL CENTER FOR ELECTRON BEAM TECHNOLOGI

Inventor： Kostyantyn Yu YAKOVCHUK ,  Vitalii O BARSKOV ,  Ivan G. KLYMENKO ,  Yuriy E. RUDOY

IPC: H01J29/48 ,  H01J37/065 ,  H01J37/305 ,  H01J29/82 ,  H01J29/04

CPC classification number: H01J29/488 ,  H01J29/04 ,  H01J29/48 ,  H01J29/82 ,  H01J37/065 ,  H01J37/305 ,  H01J2229/481 ,  H01J2237/152

Abstract: An electron beam projector with a linear thermal cathode (7) for electron beam heating consists of a beam guide (1) which comprises a deflecting electromagnetic system (2) and accommodates an accelerating anode (3) fixed on it by a posts (10), where anode is connected by a high-voltage insulators (4) through a cathode plate (5) to a cathode assembly (6), that includes the linear thermal cathode (7) fastened in a cathode holders (8), and a focusing electrode (9). The accelerating anode (3) comprises a plate (11) rigidly fastened to it for hermetical separation of the cathode (7) and the beam guide (1) parts of the projector, wherein the common optical axis of a cathode assembly (6) and the accelerating anode (3) is deflected from a beam guide optical axis by an angle a that is equal to 10÷30°.

公开(公告)号：US09984848B2

公开(公告)日：2018-05-29

申请号：US15066816

申请日：2016-03-10

Applicant: ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH

Inventor： Jürgen Frosien

IPC: H01J37/141 ,  H01J37/12 ,  H01J37/147 ,  H01J37/21 ,  H01J37/28

CPC classification number: H01J37/12 ,  H01J37/1474 ,  H01J37/21 ,  H01J37/28 ,  H01J2237/1516 ,  H01J2237/152 ,  H01J2237/24475 ,  H01J2237/2448

Abstract: A multi-beam lens device is described, which includes: a first beam passage for a first charged particle beam formed along a first direction between a first beam inlet of the first beam passage and a first beam outlet of the first beam passage; a second beam passage for a second charged particle beam formed along a second direction between a second beam inlet of the second beam passage and a second beam outlet of the second beam passage, wherein the first direction and the second direction are inclined with respect to each other by an angle (α) of 5° or more such that the first beam passage approaches the second beam passage toward the first beam outlet; and a common excitation coil or a common electrode arrangement configured for focussing the first charged particle beam and the second charged particle beam. Further, a charged particle beam device as well as a method of operating a multi-beam lens device are described.

公开(公告)号：US09793087B2

公开(公告)日：2017-10-17

申请号：US14849813

申请日：2015-09-10

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： James S. Buff ,  Victor Benveniste ,  Frank Sinclair

IPC: H01J37/147 ,  H01J37/14 ,  H01J37/317

CPC classification number: H01J37/1475 ,  H01J37/14 ,  H01J37/1471 ,  H01J37/1478 ,  H01J37/3171 ,  H01J2237/1415 ,  H01J2237/152 ,  H01J2237/31701

Abstract: A method may include: generating an ion beam from an ion source, the ion beam having an initial direction of propagation; deflecting the ion beam at an initial angle of inclination with respect to the initial direction of propagation; passing the ion beam through an aperture in a magnetic assembly; and generating in the aperture, a quadrupole field extending along a first direction perpendicular to the initial direction of propagation of the ion beam, and a dipole field extending along a second direction perpendicular to the first direction and the initial direction of propagation.

公开(公告)号：US09642233B2

公开(公告)日：2017-05-02

申请号：US14123791

申请日：2012-06-08

Applicant: Soriba Franciszek (François) Sylla ,  Victor Armand Malka ,  Alessandro Federico Flacco ,  Mina Ivanova Veltcheva ,  Subhendu Kahaly

Inventor： Soriba Franciszek (François) Sylla ,  Victor Armand Malka ,  Alessandro Federico Flacco ,  Mina Ivanova Veltcheva ,  Subhendu Kahaly

IPC: H05G2/00 ,  H05H1/54 ,  H01J37/32 ,  A61B6/00 ,  H05H1/22

CPC classification number: H05G2/006 ,  A61B6/40 ,  H01J37/32009 ,  H01J37/32669 ,  H01J2237/152 ,  H01J2893/0063 ,  H05G2/00 ,  H05G2/001 ,  H05G2/003 ,  H05G2/008 ,  H05H1/22 ,  H05H1/54 ,  H05H2277/10 ,  H05H2277/11 ,  H05H2277/113

Abstract: A method and apparatus for generating a pulsed jet of fluid, and transforming the jet into a plasma. The method includes using a high-pressure rapid solenoid valve, and a pipe mounted on an outlet opening of the solenoid valve to produce a pulsed fluid jet which is sub-millimetric in size, and the atomic density of which is more than 1020 cm−3.

公开(公告)号：US20160329186A1

公开(公告)日：2016-11-10

申请号：US15109230

申请日：2014-12-16

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Wen LI ,  Ryo KADOI ,  Kazuki IKEDA ,  Hiroyuki TAKAHASHI ,  Hajime KAWANO

IPC: H01J37/147 ,  H01J37/244 ,  H01J37/28

CPC classification number: H01J37/1472 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/1504 ,  H01J2237/1508 ,  H01J2237/152 ,  H01J2237/1534 ,  H01J2237/2804 ,  H01J2237/2806

Abstract: A processing apparatus and a processing method are provided, which use a charged particle beam device that achieves defection of secondary electrons/reflected electrons at a large angle and cancels out noises of an electromagnetic deflector and an electrostatic deflector to suppress a position shift of a primary electron beam caused by circuit noises of a primary beam/secondary beam separation circuit. In the charged particle beam device that includes an electronic optical system radiating a concentrated electron beam onto a sample placed on a stage to perform scanning and captures an image of the sample, a reference signal and a signal generation unit of a voltage-source control signal applied to the electrostatic deflector generating the electrostatic deflector and a reference signal and a signal generation unit of a current-source control signal applied to the electromagnetic deflector generating a magnetic field are made common in an overlapping-electromagnetic-deflector control unit that controls a path of the secondary electrons/reflected electrons incident on a detector, and frequency characteristics and phase characteristics of the voltage control signal are coincident with those of the current-source control signal.

Abstract translation: 提供一种处理装置和处理方法，其使用以大角度实现二次电子/反射电子的偏离的带电粒子束装置，并且消除电磁偏转器和静电偏转器的噪声，以抑制初级 电子束由主光束/次光束分离电路的电路噪声引起。 在带电粒子束装置中，包括电子光学系统，该电子光学系统将集中的电子束辐射到放置在载物台上的样品上以进行扫描并捕获样品的图像，参考信号和电压源控制信号的信号产生单元 施加到产生静电偏转器的静电偏转器，并且施加到产生磁场的电磁偏转器的电流源控制信号的参考信号和信号产生单元在控制路径的重叠电磁偏转器控制单元中是共同的 的入射到检测器上的二次电子/反射电子，并且电压控制信号的频率特性和相位特性与电流源控制信号的频率特性和相位特性一致。

公开(公告)号：US09472372B2

公开(公告)日：2016-10-18

申请号：US14798797

申请日：2015-07-14

Applicant: NuFlare Technology, Inc.

Inventor： Taku Yamada ,  Kaoru Tsuruta ,  Yasuyuki Taneda ,  Kenji Ohtoshi

IPC: G21K5/04 ,  H01J37/147 ,  H01J37/141 ,  H01J37/04

CPC classification number: H01J37/1472 ,  H01J37/045 ,  H01J37/141 ,  H01J37/3174 ,  H01J2237/022 ,  H01J2237/121 ,  H01J2237/14 ,  H01J2237/1516 ,  H01J2237/152 ,  H01J2237/31776

Abstract: A charged particle beam writing apparatus includes a stage configured to mount a sample placed thereon; an electron optical column including a charged particle gun and deflector, wherein the charged particle gun is configured to emit a charged particle beam, and the deflector includes a plurality of deflecting electrodes configured to control a path of the charged particle beam; an ozone introducing mechanism configured to introduce ozone into the electron optical column; a first voltage supply unit configured to apply a deflection voltage to the plurality of deflecting electrodes to deflect the charged particle beam; and a second voltage supply unit configured to apply an identical negative DC voltage to the plurality of deflecting electrodes, wherein a negative voltage in which the deflection voltage and the negative DC voltage are added is applied to the plurality of deflecting electrodes while the sample is irradiated by the charged particle beam.

Abstract translation: 一种带电粒子束写入装置，包括：被配置为安装其上放置的样品的台; 包括带电粒子枪和偏转器的电子光学柱，其中所述带电粒子枪被配置为发射带电粒子束，并且所述偏转器包括被配置为控制所述带电粒子束的路径的多个偏转电极; 臭氧引入机构，被配置为将臭氧引入到电子光学柱中; 第一电压供给单元，被配置为向所述多个偏转电极施加偏转电压以使所述带电粒子束偏转; 以及第二电压供给单元，被配置为向所述多个偏转电极施加相同的负DC电压，其中，在所述多个偏转电极被照射时，将所述偏转电压和所述负的DC电压相加的负电压施加到所述多个偏转电极 通过带电粒子束。

公开(公告)号：US09401260B2

公开(公告)日：2016-07-26

申请号：US14217064

申请日：2014-03-17

Applicant: GLENN LANE FAMILY LIMITED LIABILITY LIMITED PARTNERSHIP

Inventor： Glenn E. Lane

IPC: H01J37/08 ,  H01J37/317 ,  H01J37/09

CPC classification number: H01J37/3007 ,  C23C14/48 ,  C23C14/54 ,  H01J37/08 ,  H01J37/09 ,  H01J37/3171 ,  H01J49/062 ,  H01J49/26 ,  H01J2237/0213 ,  H01J2237/04 ,  H01J2237/0455 ,  H01J2237/152 ,  H01J2237/31701 ,  H01L21/265

Abstract: Embodiments of the invention relate to a mass resolving aperture that may be used in an ion implantation system that selectively exclude ion species based on charge to mass ratio (and/or mass to charge ratio) that are not desired for implantation, in an ion beam assembly. Embodiments of the invention relate to a mass resolving aperture that is segmented, adjustable, and/or presents a curved surface to the oncoming ion species that will strike the aperture. Embodiments of the invention also relate to the filtering of a flow of charged particles through a closed plasma channel (CPC) superconductor, or boson energy transmission system.

Abstract translation: 本发明的实施例涉及可用于离子注入系统中的质量分辨孔径，该离子注入系统基于离子束中不需要的注入质量比（和/或质荷比）来选择性地排除离子种类 部件。 本发明的实施例涉及一种质量分辨孔径，该质量分辨孔径被分段，可调节和/或呈现出将撞击孔的迎面而来的离子物质的曲面。 本发明的实施例还涉及通过封闭的等离子体通道（CPC）超导体或玻色子能量传输系统对带电粒子的流过滤。