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公开(公告)号：US20160180959A1
公开(公告)日：2016-06-23
申请号：US14977155
申请日：2015-12-21
Applicant: SanDisk Technologies Inc.
CPC classification number: G06F3/0653 , G06F3/0625 , G06F3/0634 , G06F11/008 , G06F11/073 , G06F11/076 , G06F11/079 , G06F11/0793 , G11C11/5628 , G11C16/0483 , G11C16/12 , G11C16/28 , G11C16/32 , G11C16/3418 , G11C16/3422 , G11C16/349 , G11C16/3495 , G11C29/028 , G11C29/50004 , G11C29/52 , G11C29/56008 , G11C29/70 , G11C2029/5004
Abstract: A memory system or flash card may include a mechanism for memory cell measurement and analysis that independently measures/predicts memory wear/endurance, data retention (DR), read disturb, and/or remaining margin. These effects may be independently quantified by analyzing the state distributions of the individual voltage levels of the cells. In particular, a histogram of cell voltage distributions of the memory cells can be analyzed to identify signatures for certain effects (e.g. wear, DR, read disturb, margin, etc.). Those measurements may be used for block cycling, data loss prediction, or adjustments to memory parameters. Pre-emptive action at the appropriate time based on the measurements may lead to improved memory management and data management. That action may include calculating the remaining useful life of data stored in memory, cycling blocks, predicting data loss, trade-off or dynamic adjustments of memory parameters.
Abstract translation: 存储器系统或闪存卡可以包括用于存储器单元测量和分析的机制，其独立地测量/预测存储器磨损/耐久性，数据保持（DR），读取干扰和/或剩余余量。 可以通过分析单元的各个电压电平的状态分布来独立地量化这些效应。 特别地，可以分析存储器单元的单元电压分布的直方图以识别特定效果的签名（例如，磨损，DR，读取干扰，余量等）。 这些测量可用于块循环，数据丢失预测或对存储器参数的调整。 在适当的时间基于测量的优先行动可能会导致改进的内存管理和数据管理。 该动作可以包括计算存储在存储器中的数据的剩余使用寿命，循环块，预测数据丢失，权衡或动态调整存储器参数。
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12.发明申请公开(公告)号：US20160180953A1
公开(公告)日：2016-06-23
申请号：US14977191
申请日：2015-12-21
Applicant: SanDisk Technologies Inc.
IPC: G11C16/34
CPC classification number: G06F3/0653 , G06F3/0625 , G06F3/0634 , G06F11/008 , G06F11/073 , G06F11/076 , G06F11/079 , G06F11/0793 , G11C11/5628 , G11C16/0483 , G11C16/12 , G11C16/28 , G11C16/32 , G11C16/3418 , G11C16/3422 , G11C16/349 , G11C16/3495 , G11C29/028 , G11C29/50004 , G11C29/52 , G11C29/56008 , G11C29/70 , G11C2029/5004
Abstract: A memory system or flash card may include a mechanism for memory cell measurement and analysis that independently measures/predicts memory wear/endurance, data retention (DR), read disturb, and/or remaining margin. These effects may be independently quantified by analyzing the state distributions of the individual voltage levels of the cells. In particular, a histogram of cell voltage distributions of the memory cells can be analyzed to identify signatures for certain effects (e.g. wear, DR, read disturb, margin, etc.). Those measurements may be used for block cycling, data loss prediction, or adjustments to memory parameters. Pre-emptive action at the appropriate time based on the measurements may lead to improved memory management and data management. That action may include calculating the remaining useful life of data stored in memory, cycling blocks, predicting data loss, trade-off or dynamic adjustments of memory parameters.
Abstract translation: 存储器系统或闪存卡可以包括用于存储器单元测量和分析的机制，其独立地测量/预测存储器磨损/耐久性，数据保持（DR），读取干扰和/或剩余余量。 可以通过分析单元的各个电压电平的状态分布来独立地量化这些效应。 特别地，可以分析存储器单元的单元电压分布的直方图以识别特定效果的签名（例如，磨损，DR，读取干扰，余量等）。 这些测量可用于块循环，数据丢失预测或对存储器参数的调整。 在适当的时间基于测量的优先行动可能会导致改进的内存管理和数据管理。 该动作可以包括计算存储在存储器中的数据的剩余使用寿命，循环块，预测数据丢失，权衡或动态调整存储器参数。
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公开(公告)号：US20160179602A1
公开(公告)日：2016-06-23
申请号：US14977198
申请日：2015-12-21
Applicant: SanDisk Technologies Inc.
CPC classification number: G06F3/0653 , G06F3/0625 , G06F3/0634 , G06F11/008 , G06F11/073 , G06F11/076 , G06F11/079 , G06F11/0793 , G11C11/5628 , G11C16/0483 , G11C16/12 , G11C16/28 , G11C16/32 , G11C16/3418 , G11C16/3422 , G11C16/349 , G11C16/3495 , G11C29/028 , G11C29/50004 , G11C29/52 , G11C29/56008 , G11C29/70 , G11C2029/5004
Abstract: A memory system or flash card may include a mechanism for memory cell measurement and analysis that independently measures/predicts memory wear/endurance, data retention (DR), read disturb, and/or remaining margin. These effects may be independently quantified by analyzing the state distributions of the individual voltage levels of the cells. In particular, a histogram of cell voltage distributions of the memory cells can be analyzed to identify signatures for certain effects (e.g. wear, DR, read disturb, margin, etc.). Those measurements may be used for block cycling, data loss prediction, or adjustments to memory parameters. Pre-emptive action at the appropriate time based on the measurements may lead to improved memory management and data management. That action may include calculating the remaining useful life of data stored in memory, cycling blocks, predicting data loss, trade-off or dynamic adjustments of memory parameters.
Abstract translation: 存储器系统或闪存卡可以包括用于存储器单元测量和分析的机制，其独立地测量/预测存储器磨损/耐久性，数据保持（DR），读取干扰和/或剩余余量。 可以通过分析单元的各个电压电平的状态分布来独立地量化这些效应。 特别地，可以分析存储器单元的单元电压分布的直方图以识别特定效果的签名（例如，磨损，DR，读取干扰，余量等）。 这些测量可用于块循环，数据丢失预测或对存储器参数的调整。 在适当的时间基于测量的优先行动可能会导致改进的内存管理和数据管理。 该动作可以包括计算存储在存储器中的数据的剩余使用寿命，循环块，预测数据丢失，权衡或动态调整存储器参数。
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14.发明申请METHOD AND SYSTEM FOR ADJUSTING BLOCK ERASE OR PROGRAM PARAMETERS BASED ON A PREDICTED ERASE LIFE 有权基于预测的消除生命调整块删除或程序参数的方法和系统公开(公告)号：US20150186072A1
公开(公告)日：2015-07-02
申请号：US14144202
申请日：2013-12-30
Applicant: SanDisk Technologies Inc.
Inventor： Neil Richard Darragh , Eran Erez , Sergey Anatolievich Gorobets
CPC classification number: G06F3/0653 , G06F3/0616 , G06F3/0679 , G06F2212/7211 , G11C16/16 , G11C16/3495
Abstract: A method and system are disclosed for improved block erase cycle life prediction and block management in a non-volatile memory. The method includes the storage device tracking information relating to a first erase cycle count at which the block erase time exceeded a predetermined threshold relative to a first erase cycle at which this occurred in other blocks. Blocks having a later relative erase cycle at which the erase time threshold is exceeded are assumed to have a greater erase cycle life than those that need to exceed the erase time threshold at an earlier erase cycle. This information is used to adjust wear leveling in the form of free block selection, garbage collection block selection and other block management processes. Alternatively or in combination, the predicted erase cycle life information is used to adjust program and/or erase parameters such as erase voltage and time.
Abstract translation: 公开了用于在非易失性存储器中改进块擦除周期寿命预测和块管理的方法和系统。 该方法包括与第一擦除周期计数有关的存储装置跟踪信息，在该第一擦除周期计数，块擦除时间超过预定阈值，相对于其它块中发生的第一擦除周期。 具有擦除时间阈值超过的较后相对擦除周期的块假设具有比在较早擦除周期期间需要超过擦除时间阈值的擦除周期寿命更长的擦除周期寿命。 该信息用于以自由块选择，垃圾收集块选择和其他块管理过程的形式来调整磨损均衡。 或者或组合地，预测的擦除周期寿命信息用于调整诸如擦除电压和时间的程序和/或擦除参数。
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公开(公告)号：US10223028B2
公开(公告)日：2019-03-05
申请号：US14977144
申请日：2015-12-21
Applicant: SanDisk Technologies Inc.
IPC: G11C29/00 , G06F3/06 , G11C16/28 , G11C16/32 , G06F11/07 , G11C16/34 , G11C29/52 , G11C11/56 , G11C16/12 , G11C29/02 , G06F11/00 , G11C29/50 , G11C29/56 , G11C16/04
Abstract: A memory system or flash card may include a mechanism for memory cell measurement and analysis that independently measures/predicts memory wear/endurance, data retention (DR), read disturb, and/or remaining margin. These effects may be independently quantified by analyzing the state distributions of the individual voltage levels of the cells. In particular, a histogram of cell voltage distributions of the memory cells can be analyzed to identify signatures for certain effects (e.g. wear, DR, read disturb, margin, etc.). Those measurements may be used for block cycling, data loss prediction, or adjustments to memory parameters. Pre-emptive action at the appropriate time based on the measurements may lead to improved memory management and data management. That action may include calculating the remaining useful life of data stored in memory, cycling blocks, predicting data loss, trade-off or dynamic adjustments of memory parameters.
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Patent Agency Ranking
公开(公告)号：US10114584B2
公开(公告)日：2018-10-30
申请号：US14977187
申请日：2015-12-21
Applicant: SanDisk Technologies Inc.
IPC: G06F11/00 , G06F3/06 , G11C16/28 , G11C16/32 , G06F11/07 , G11C16/34 , G11C29/52 , G11C11/56 , G11C16/12 , G11C29/02 , G11C29/50 , G11C29/00 , G11C29/56 , G11C16/04
Abstract: A memory system or flash card may include a mechanism for memory cell measurement and analysis that independently measures/predicts memory wear/endurance, data retention (DR), read disturb, and/or remaining margin. These effects may be independently quantified by analyzing the state distributions of the individual voltage levels of the cells. In particular, a histogram of cell voltage distributions of the memory cells can be analyzed to identify signatures for certain effects (e.g. wear, DR, read disturb, margin, etc.). Those measurements may be used for block cycling, data loss prediction, or adjustments to memory parameters. Pre-emptive action at the appropriate time based on the measurements may lead to improved memory management and data management. That action may include calculating the remaining useful life of data stored in memory, cycling blocks, predicting data loss, trade-off or dynamic adjustments of memory parameters.
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公开(公告)号：US09792071B2
公开(公告)日：2017-10-17
申请号：US14977198
申请日：2015-12-21
Applicant: SanDisk Technologies Inc.
IPC: G11C29/00 , G06F3/06 , G11C16/28 , G11C16/32 , G06F11/07 , G11C16/34 , G11C11/56 , G11C16/12 , G11C29/02 , G06F11/00 , G11C29/56 , G11C29/52 , G11C16/04
CPC classification number: G06F3/0653 , G06F3/0625 , G06F3/0634 , G06F11/008 , G06F11/073 , G06F11/076 , G06F11/079 , G06F11/0793 , G11C11/5628 , G11C16/0483 , G11C16/12 , G11C16/28 , G11C16/32 , G11C16/3418 , G11C16/3422 , G11C16/349 , G11C16/3495 , G11C29/028 , G11C29/50004 , G11C29/52 , G11C29/56008 , G11C29/70 , G11C2029/5004
Abstract: A memory system or flash card includes a mechanism for memory cell measurement and analysis that independently measures/predicts memory wear/endurance, data retention (DR), read disturb, and/or remaining margin. These effects can be independently quantified by analyzing the state distributions of the individual voltage levels of the cells. In particular, a histogram of cell voltage distributions of the memory cells can be analyzed to identify signatures for certain effects (e.g. wear, DR, read disturb, margin, etc.). Those measurements are used for block cycling, data loss prediction, or adjustments to memory parameters. Pre-emptive action at the appropriate time based on the measurements leads to improved memory management and data management. That action includes calculating the remaining useful life of data stored in memory, cycling blocks, predicting data loss, trade-off or dynamic adjustments of memory parameters.
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公开(公告)号：US09658800B2
公开(公告)日：2017-05-23
申请号：US14977174
申请日：2015-12-21
Applicant: SanDisk Technologies Inc.
IPC: G11C16/06 , G06F3/06 , G11C16/28 , G11C16/32 , G06F11/07 , G11C16/34 , G11C11/56 , G11C16/12 , G11C29/02 , G06F11/00 , G11C29/56 , G11C29/52 , G11C16/04
CPC classification number: G06F3/0653 , G06F3/0625 , G06F3/0634 , G06F11/008 , G06F11/073 , G06F11/076 , G06F11/079 , G06F11/0793 , G11C11/5628 , G11C16/0483 , G11C16/12 , G11C16/28 , G11C16/32 , G11C16/3418 , G11C16/3422 , G11C16/349 , G11C16/3495 , G11C29/028 , G11C29/50004 , G11C29/52 , G11C29/56008 , G11C29/70 , G11C2029/5004
Abstract: A memory system or flash card may include a mechanism for memory cell measurement and analysis that independently measures/predicts memory wear/endurance, data retention (DR), read disturb, and/or remaining margin. These effects may be independently quantified by analyzing the state distributions of the individual voltage levels of the cells. In particular, a histogram of cell voltage distributions of the memory cells can be analyzed to identify signatures for certain effects (e.g. wear, DR, read disturb, margin, etc.). Those measurements may be used for block cycling, data loss prediction, or adjustments to memory parameters. Pre-emptive action at the appropriate time based on the measurements may lead to improved memory management and data management. That action may include calculating the remaining useful life of data stored in memory, cycling blocks, predicting data loss, trade-off or dynamic adjustments of memory parameters.
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19.发明授权Storage module and method for analysis and disposition of dynamically tracked read error events 有权用于分析和处理动态跟踪的读取错误事件的存储模块和方法公开(公告)号：US09396080B2
公开(公告)日：2016-07-19
申请号：US14454482
申请日：2014-08-07
Applicant: SanDisk Technologies Inc.
Inventor： Ashutosh Malshe , Neil Richard Darragh , Karthik Krishnamoorthy
CPC classification number: G06F11/2094 , G06F11/073 , G06F11/076 , G06F11/0793 , G06F2201/81
Abstract: A method for analyzing a read error event is provided comprising reading a page of data stored in memory, determining a read error event for the page of data, and identifying a scope of the read error event in the memory. In another embodiment, a method for performing a preliminary read error recovery is provided comprising reading a first data unit from memory and identifying a bit error rate for a first data unit with a correction engine, determining that the bit error rate is above a threshold, accessing a data structure including entries identifying data units and read error event information associated with the data units, identifying a second data unit in an entry that matches the first data unit, and performing a preliminary read error recovery process on the first data unit using the information in the entry to reduce the bit error rate below the threshold.
Abstract translation: 提供了一种用于分析读取错误事件的方法，包括读取存储在存储器中的数据页面，确定数据页面的读取错误事件，以及识别存储器中的读取错误事件的范围。 在另一个实施例中，提供了一种用于执行初步读取错误恢复的方法，包括从存储器读取第一数据单元并且利用校正引擎识别第一数据单元的误码率，确定误码率高于阈值， 访问包括标识数据单元的条目和与数据单元相关联的读取错误事件信息的数据结构，识别与第一数据单元匹配的条目中的第二数据单元，以及使用第一数据单元对第一数据单元执行初步读取错误恢复处理 条目中的信息减少了误码率低于阈值。
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20.发明申请DYNAMIC PROGRAMMING ADJUSTMENTS IN MEMORY FOR NON-CRITICAL OR LOW POWER MODE TASKS 审中-公开用于非关键或低功耗模式任务的内存中的动态编程调整公开(公告)号：US20160179428A1
公开(公告)日：2016-06-23
申请号：US14977227
申请日：2015-12-21
Applicant: SanDisk Technologies Inc.
IPC: G06F3/06
CPC classification number: G06F3/0653 , G06F3/0625 , G06F3/0634 , G06F11/008 , G06F11/073 , G06F11/076 , G06F11/079 , G06F11/0793 , G11C11/5628 , G11C16/0483 , G11C16/12 , G11C16/28 , G11C16/32 , G11C16/3418 , G11C16/3422 , G11C16/349 , G11C16/3495 , G11C29/028 , G11C29/50004 , G11C29/52 , G11C29/56008 , G11C29/70 , G11C2029/5004
Abstract: A memory system or flash card may include a mechanism for memory cell measurement and analysis that independently measures/predicts memory wear/endurance, data retention (DR), read disturb, and/or remaining margin. These effects may be independently quantified by analyzing the state distributions of the individual voltage levels of the cells. In particular, a histogram of cell voltage distributions of the memory cells can be analyzed to identify signatures for certain effects (e.g. wear, DR, read disturb, margin, etc.). Those measurements may be used for block cycling, data loss prediction, or adjustments to memory parameters. Pre-emptive action at the appropriate time based on the measurements may lead to improved memory management and data management. That action may include calculating the remaining useful life of data stored in memory, cycling blocks, predicting data loss, trade-off or dynamic adjustments of memory parameters.
Abstract translation: 存储器系统或闪存卡可以包括用于存储器单元测量和分析的机制，其独立地测量/预测存储器磨损/耐久性，数据保持（DR），读取干扰和/或剩余余量。 可以通过分析单元的各个电压电平的状态分布来独立地量化这些效应。 特别地，可以分析存储器单元的单元电压分布的直方图以识别特定效果的签名（例如，磨损，DR，读取干扰，余量等）。 这些测量可用于块循环，数据丢失预测或对存储器参数的调整。 在适当的时间基于测量的优先行动可能会导致改进的内存管理和数据管理。 该动作可以包括计算存储在存储器中的数据的剩余使用寿命，循环块，预测数据丢失，权衡或动态调整存储器参数。
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