公开(公告)号：US07531369B2

公开(公告)日：2009-05-12

申请号：US11203365

申请日：2005-08-12

Applicant: Vijayakumar C. Venugopal

Inventor： Vijayakumar C. Venugopal

IPC: H01L21/66

CPC classification number: G01N21/8422 ,  G01B11/0625 ,  G01B11/0683

Abstract: A method of determining a parameter of interest during processing of a patterned substrate includes obtaining a measured net reflectance spectrum resulting from illuminating at least a portion of the patterned substrate with a light beam having a broadband spectrum, calculating a modeled net reflectance spectrum as a weighted incoherent sum of reflectances from different regions constituting the portion of the patterned substrate, and determining a set of parameters that provides a close match between the measured net reflectance spectrum and the modeled net reflectance spectrum. For wavelengths below a selected transition wavelength, a first optical model is used to calculate the reflectance from each region as a weighted coherent sum of reflected fields from thin film stacks corresponding to laterally distinct areas constituting the region. For wavelengths above the transition wavelength, a second optical model based on effective medium approximation is used to calculate the reflectance from each region.

Abstract translation: 在图案化衬底的处理期间确定感兴趣的参数的方法包括获得由具有宽带光谱的光束照射图案化衬底的至少一部分而得到的测量的净反射光谱，将模拟的净反射光谱计算为加权 构成图案化衬底部分的不同区域的反射率不相干和，并且确定提供测量的净反射光谱和建模的净反射光谱之间的紧密匹配的一组参数。 对于低于所选择的跃迁波长的波长，使用第一光学模型来计算来自每个区域的反射率，作为对应于构成区域的横向不同区域的薄膜叠层的反射场的加权相干和。 对于高于过渡波长的波长，使用基于有效介质近似的第二光学模型来计算每个区域的反射率。

公开(公告)号：US06979578B2

公开(公告)日：2005-12-27

申请号：US10401118

申请日：2003-03-27

Applicant: Vijayakumar C. Venugopal

Inventor： Vijayakumar C. Venugopal

IPC: G01B11/06 ,  G01N21/84 ,  H01L21/66

CPC classification number: G01N21/8422 ,  G01B11/0625 ,  G01B11/0683

Abstract: A method of determining a parameter of interest during processing of a patterned substrate includes obtaining a measured net reflectance spectrum resulting from illuminating at least a portion of the patterned substrate with a light beam having a broadband spectrum, calculating a modeled net reflectance spectrum as a weighted incoherent sum of reflectances from different regions constituting the portion of the patterned substrate, and determining a set of parameters that provides a close match between the measured net reflectance spectrum and the modeled net reflectance spectrum. For wavelengths below a selected transition wavelength, a first optical model is used to calculate the reflectance from each region as a weighted coherent sum of reflected fields from thin film stacks corresponding to laterally distinct areas constituting the region. For wavelengths above the transition wavelength, a second optical model based on effective medium approximation is used to calculate the reflectance from each region.

Abstract translation: 在图案化衬底的处理期间确定感兴趣的参数的方法包括获得由具有宽带光谱的光束照射图案化衬底的至少一部分而得到的测量的净反射光谱，将模拟的净反射光谱计算为加权 构成图案化衬底部分的不同区域的反射率不相干和，并且确定提供测量的净反射光谱和建模的净反射光谱之间的紧密匹配的一组参数。 对于低于所选择的跃迁波长的波长，使用第一光学模型来计算来自每个区域的反射率，作为对应于构成区域的横向不同区域的薄膜叠层的反射场的加权相干和。 对于高于过渡波长的波长，使用基于有效介质近似的第二光学模型来计算每个区域的反射率。

公开(公告)号：US06939811B2

公开(公告)日：2005-09-06

申请号：US10256251

申请日：2002-09-25

Applicant: Tom A. Kamp ,  Alan J. Miller ,  Vijayakumar C. Venugopal

Inventor： Tom A. Kamp ,  Alan J. Miller ,  Vijayakumar C. Venugopal

IPC: H01L21/00 ,  H01L21/3065 ,  H01L21/302

CPC classification number: H01L21/67253 ,  H01J37/321 ,  H01J37/32963 ,  H01L21/3065 ,  H01L21/67069

Abstract: An apparatus and method for etching a feature in a wafer with improved depth control and reproducibility is described. The feature is etched at a first etching rate and then at a second etching rate, which is slower than the first etching rate. An optical end point device is used to determine the etching depth and etching is stopped so that the feature has the desired depth. Two different etching rates provides high throughput with good depth control and reproducibility. The apparatus includes an etching tool in which a chuck holds the wafer to be etched. An optical end point device is positioned to measure the feature etch depth. An electronic controller communicates with the optical end point device and the etching tool to control the tool to reduce the etch rate part way through etching the feature and to stop the etching tool, so that that the feature is etched to the desired depth.

Abstract translation: 描述了一种用于蚀刻具有改进的深度控制和再现性的晶片中的特征的装置和方法。 以第一蚀刻速率蚀刻该特征，然后以比第一蚀刻速率慢的第二蚀刻速率蚀刻该特征。 使用光学终点装置来确定蚀刻深度并停止蚀刻，使得特征具有期望的深度。 两种不同的蚀刻速率提供了高吞吐量，具有良好的深度控制和重现性。 该装置包括蚀刻工具，其中卡盘夹持待蚀刻的晶片。 定位光学终点装置以测量特征蚀刻深度。 电子控制器与光学终点装置和蚀刻工具通信以控制工具，以通过蚀刻特征来减少蚀刻速率，并停止蚀刻工具，使得该特征被蚀刻到期望的深度。

公开(公告)号：US20120170039A1

公开(公告)日：2012-07-05

申请号：US13415763

申请日：2012-03-08

Applicant: Vijayakumar C. Venugopal ,  Eric Pape ,  Jean-Paul Booth

Inventor： Vijayakumar C. Venugopal ,  Eric Pape ,  Jean-Paul Booth

IPC: G01J3/42

CPC classification number: G01N21/274 ,  G01J3/02 ,  G01J3/0205 ,  G01J3/0218 ,  G01J3/0294 ,  G01J3/443 ,  G01N21/68

Abstract: A processing system having a chamber for in-situ optical interrogation of plasma emission to quantitatively measure normalized optical emission spectra is provided. The processing chamber includes a confinement ring assembly, a flash lamp, and a set of quartz windows. The processing chamber also includes a plurality of collimated optical assemblies, the plurality of collimated optical assemblies are optically coupled to the set of quartz windows. The processing chamber also includes a plurality of fiber optic bundles. The processing chamber also includes a multi-channel spectrometer, the multi-channel spectrometer is configured with at least a signal channel and a reference channel, the signal channel is optically coupled to at least the flash lamp, the set of quartz windows, the set of collimated optical assemblies, the illuminated fiber optic bundle, and the collection fiber optic bundle to measure a first signal.

Abstract translation: 提供一种具有用于等离子体发射的原位光询问室以定量测量归一化光发射光谱的处理系统。 处理室包括限制环组件，闪光灯和一组石英窗。 处理室还包括多个准直光学组件，多个准直光学组件光学耦合到该组石英窗口。 处理室还包括多个光纤束。 处理室还包括多通道光谱仪，多通道光谱仪配置有至少一个信号通道和一个参考通道，信号通道光学耦合到至少闪光灯，该组石英窗，该组 准直光学组件，照明光纤束和收集光纤束以测量第一信号。

公开(公告)号：US20100332013A1

公开(公告)日：2010-12-30

申请号：US12826562

申请日：2010-06-29

Applicant: Brian D. Choi ,  Gunsu Yun ,  Vijayakumar C. Venugopal

Inventor： Brian D. Choi ,  Gunsu Yun ,  Vijayakumar C. Venugopal

IPC: G06F19/00

CPC classification number: G05B23/0254 ,  G05B2219/37224

Abstract: A method for predicting etch rate uniformity for qualifying health status of a processing chamber during substrate processing of substrates is provided. The method includes executing a recipe and receiving processing data from a first set of sensors. The method further includes analyzing the processing data utilizing a subsystem health check predictive model to determine calculated data, which includes at least one of etch rate data and uniformity data. The subsystem health check predictive model is constructed by correlating measurement data from a set of film substrates with processing data collected during analogous processing of a set of non-film substrates. The method yet also includes performing a comparison of the calculated data against a set of control limits as defined by the subsystem health check predictive model. The method yet further includes generating a warning if the calculated data is outside of the set of control limits.

Abstract translation: 提供了一种用于在衬底的衬底处理期间预测用于限定处理室的健康状况的蚀刻速率均匀性的方法。 该方法包括执行食谱并从第一组传感器接收处理数据。 该方法还包括利用子系统健康检查预测模型来分析处理数据，以确定计算出的数据，其包括蚀刻速率数据和均匀性数据中的至少一个。 通过将来自一组膜基底的测量数据与在一组非膜基底的类似处理期间收集的处理数据相关联来构建子系统健康检查预测模型。 该方法还包括执行计算数据与由子系统健康检查预测模型定义的一组控制限制的比较。 该方法还包括如果所计算的数据超出该组控制限制，则产生警告。

公开(公告)号：US20100332012A1

公开(公告)日：2010-12-30

申请号：US12555674

申请日：2009-09-08

Applicant: Chung-Ho Huang ,  Vijayakumar C. Venugopal ,  Connie Lam ,  Dragan Podlesnik

Inventor： Chung-Ho Huang ,  Vijayakumar C. Venugopal ,  Connie Lam ,  Dragan Podlesnik

IPC: G05B9/02 ,  G06F9/50 ,  G06F11/20

CPC classification number: G06F9/5027 ,  G05B19/4184 ,  G05B2219/31202 ,  G05B2219/31293 ,  G05B2219/31318 ,  G05B2219/31481 ,  G05B2219/32209 ,  G05B2219/45031 ,  G06F11/2035 ,  G06F11/2043 ,  Y02P90/14 ,  Y02P90/18

Abstract: A process-level troubleshooting architecture (PLTA) configured to facilitate substrate processing in a plasma processing system is provided. The architecture includes a process module controller. The architecture also includes a plurality of sensors, wherein each sensor of the plurality of sensors communicates with the process module controller to collect sensed data about one or more process parameters. The architecture further includes a process-module-level analysis server, wherein the process-module-level analysis server communicates directly with the plurality of sensors and the process module controller. The process-module-level analysis server is configured for receiving data, wherein the data include at least one of the sensed data from the plurality of sensors and process module and chamber data from the process module controller. The process-module-level analysis server is also configured for analyzing the data and sending interdiction data directly to the process module controller when a problem is identified during the substrate processing.

Abstract translation: 提供了一种配置为促进等离子体处理系统中的基板处理的过程级故障排除架构（PLTA）。 该架构包括一个进程模块控制器。 该架构还包括多个传感器，其中多个传感器中的每个传感器与过程模块控制器通信以收集关于一个或多个过程参数的感测数据。 该体系结构还包括一个过程模块级分析服务器，其中过程模块级分析服务器与多个传感器和过程模块控制器直接通信。 过程模块级分析服务器被配置为用于接收数据，其中数据包括来自多个传感器的感测数据中的至少一个以及来自处理模块控制器的处理模块和室数据。 过程模块级分析服务器还被配置为当在衬底处理期间识别出问题时，分析数据并将拦截数据直接发送到过程模块控制器。

公开(公告)号：US20090002836A1

公开(公告)日：2009-01-01

申请号：US11772008

申请日：2007-06-29

Applicant: Vijayakumar C. Venugopal ,  Eric Pape

Inventor： Vijayakumar C. Venugopal ,  Eric Pape

IPC: G02B27/30

CPC classification number: H05H1/0025 ,  G02B27/30

Abstract: A method for optical interrogation of plasma during plasma processing in a plasma processing chamber is provided. The method includes providing an optical viewport. The method also includes providing a collimator arrangement. The collimator arrangement is configured with a plurality of collimators, wherein a first collimator of the plurality of collimators is separated by a connecting region from a second collimator in the plurality of collimators. The method further includes collecting optical signals, through the collimator arrangement, from the plasma within the plasma processing chamber while a substrate is being processed, resulting in highly collimated optical signals.

Abstract translation: 提供了一种在等离子体处理室中的等离子体处理期间对等离子体进行光询问的方法。 该方法包括提供光学视口。 该方法还包括提供准直器装置。 准直器装置配置有多个准直器，其中多个准直器中的第一准直仪由多个准直器中的第二准直器的连接区域分开。 该方法还包括在正在处理衬底的同时通过准直器装置从等离子体处理室内的等离子体收集光信号，导致高度准直的光信号。

公开(公告)号：US08271121B2

公开(公告)日：2012-09-18

申请号：US12826560

申请日：2010-06-29

Applicant: Vijayakumar C. Venugopal ,  Neil Martin Paul Benjamin

Inventor： Vijayakumar C. Venugopal ,  Neil Martin Paul Benjamin

IPC: G06F19/00

CPC classification number: H01J37/32935

Abstract: An arrangement for implementing an automatic in-situ process control scheme during execution of a recipe is provided. The arrangement includes control-loop sensors configured at least for collecting a first set of sensor data to facilitate monitoring set points during the recipe execution, wherein the control-loop sensors being part of a process control loop. The arrangement also includes independent sensors configured at least for collecting a second set of sensor data, which is not part of the process control loop. The arrangement yet also includes a hub configured for at least receiving at least one of the first set of sensor data and the second set of sensor data. The arrangement yet further includes an analysis computer communicably coupled with the hub and configured for performing analysis of at least one of the first set of sensor data and the second set of sensor data.

Abstract translation: 提供了在执行配方期间实现自动原位过程控制方案的布置。 该装置包括控制回路传感器，其配置成至少用于收集第一组传感器数据以便于在配方执行期间监视设定点，其中控制环传感器是过程控制回路的一部分。 该装置还包括至少用于收集第二组传感器数据的独立传感器，其不是过程控制回路的一部分。 该布置还包括配置用于至少接收第一组传感器数据和第二组传感器数据中的至少一个的集线器。 该装置还包括分析计算机，其与所述集线器可通信地耦合并且被配置用于对所述第一组传感器数据和所述第二组传感器数据中的至少一个执行分析。

公开(公告)号：US07907260B2

公开(公告)日：2011-03-15

申请号：US11772008

申请日：2007-06-29

Applicant: Vijayakumar C. Venugopal ,  Eric A. Pape

Inventor： Vijayakumar C. Venugopal ,  Eric A. Pape

IPC: G01N21/00 ,  G02B27/30

CPC classification number: H05H1/0025 ,  G02B27/30

Abstract: A method for optical interrogation of plasma during plasma processing in a plasma processing chamber is provided. The method includes providing an optical viewport. The method also includes providing a collimator arrangement. The collimator arrangement is configured with a plurality of collimators, wherein a first collimator of the plurality of collimators is separated by a connecting region from a second collimator in the plurality of collimators. The method further includes collecting optical signals, through the collimator arrangement, from the plasma within the plasma processing chamber while a substrate is being processed, resulting in highly collimated optical signals.

Abstract translation: 提供了一种在等离子体处理室中的等离子体处理期间对等离子体进行光询问的方法。 该方法包括提供光学视口。 该方法还包括提供准直器装置。 准直器装置配置有多个准直器，其中多个准直器中的第一准直仪由多个准直器中的第二准直器的连接区域分开。 该方法还包括在正在处理衬底的同时通过准直器装置从等离子体处理室内的等离子体收集光信号，导致高度准直的光信号。

公开(公告)号：US20100332011A1

公开(公告)日：2010-12-30

申请号：US12826560

申请日：2010-06-29

Applicant: Vijayakumar C. Venugopal ,  Neil Martin Paul Benjamin

Inventor： Vijayakumar C. Venugopal ,  Neil Martin Paul Benjamin

IPC: G06F19/00

CPC classification number: H01J37/32935

Abstract: An arrangement for implementing an automatic in-situ process control scheme during execution of a recipe is provided. The arrangement includes control-loop sensors configured at least for collecting a first set of sensor data to facilitate monitoring set points during the recipe execution, wherein the control-loop sensors being part of a process control loop. The arrangement also includes independent sensors configured at least for collecting a second set of sensor data, which is not part of the process control loop. The arrangement yet also includes a hub configured for at least receiving at least one of the first set of sensor data and the second set of sensor data. The arrangement yet further includes an analysis computer communicably coupled with the hub and configured for performing analysis of at least one of the first set of sensor data and the second set of sensor data.

Abstract translation: 提供了在执行配方期间实现自动原位过程控制方案的布置。 该装置包括控制回路传感器，其配置成至少用于收集第一组传感器数据以便于在配方执行期间监视设定点，其中控制环传感器是过程控制回路的一部分。 该装置还包括至少用于收集第二组传感器数据的独立传感器，其不是过程控制回路的一部分。 该布置还包括配置用于至少接收第一组传感器数据和第二组传感器数据中的至少一个的集线器。 该装置还包括分析计算机，其与所述集线器可通信地耦合并且被配置用于对所述第一组传感器数据和所述第二组传感器数据中的至少一个执行分析。