公开(公告)号：US08358416B2

公开(公告)日：2013-01-22

申请号：US13415763

申请日：2012-03-08

Applicant: Vijayakumar C. Venugopal ,  Eric Pape ,  Jean-Paul Booth

Inventor： Vijayakumar C. Venugopal ,  Eric Pape ,  Jean-Paul Booth

IPC: G01N21/00

CPC classification number: G01N21/274 ,  G01J3/02 ,  G01J3/0205 ,  G01J3/0218 ,  G01J3/0294 ,  G01J3/443 ,  G01N21/68

Abstract: A processing system having a chamber for in-situ optical interrogation of plasma emission to quantitatively measure normalized optical emission spectra is provided. The processing chamber includes a confinement ring assembly, a flash lamp, and a set of quartz windows. The processing chamber also includes a plurality of collimated optical assemblies, the plurality of collimated optical assemblies are optically coupled to the set of quartz windows. The processing chamber also includes a plurality of fiber optic bundles. The processing chamber also includes a multi-channel spectrometer, the multi-channel spectrometer is configured with at least a signal channel and a reference channel, the signal channel is optically coupled to at least the flash lamp, the set of quartz windows, the set of collimated optical assemblies, the illuminated fiber optic bundle, and the collection fiber optic bundle to measure a first signal.

Abstract translation: 提供一种具有用于等离子体发射的原位光询问室以定量测量归一化光发射光谱的处理系统。 处理室包括限制环组件，闪光灯和一组石英窗。 处理室还包括多个准直光学组件，多个准直光学组件光学耦合到该组石英窗口。 处理室还包括多个光纤束。 处理室还包括多通道光谱仪，多通道光谱仪配置有至少一个信号通道和一个参考通道，信号通道光学耦合到至少闪光灯，该组石英窗，该组 准直光学组件，照明光纤束和收集光纤束以测量第一信号。

公开(公告)号：US20100332201A1

公开(公告)日：2010-12-30

申请号：US12826575

申请日：2010-06-29

Applicant: Luc Albarede ,  Eric Pape ,  Vijayakumar C. Venugopal ,  Brian D. Choi

Inventor： Luc Albarede ,  Eric Pape ,  Vijayakumar C. Venugopal ,  Brian D. Choi

IPC: G06F17/10 ,  G06G7/62

CPC classification number: H01J37/32935 ,  H01J37/32477

Abstract: A method for assessing health status of a processing chamber is provided. The method includes executing a recipe. The method also includes receiving processing data from a set of sensors during execution of the recipe. The method further includes analyzing the processing data utilizing a set of multi-variate predictive models. The method yet also includes generating a set of component wear data values. The method yet further includes comparing the set of component wear data values against a set of useful life threshold ranges. The method moreover includes generating a warning if the set of component wear data values is outside of the set of useful life threshold ranges.

Abstract translation: 提供了一种用于评估处理室的健康状况的方法。 该方法包括执行食谱。 该方法还包括在执行配方期间从一组传感器接收处理数据。 该方法还包括利用一组多变量预测模型分析处理数据。 该方法还包括生成一组组件磨损数据值。 该方法还包括将组件磨损数据值集合与一组使用寿命阈值范围进行比较。 该方法还包括如果组件磨损数据值的集合超出了使用寿命阈值范围的集合，则产生警告。

公开(公告)号：US20100332014A1

公开(公告)日：2010-12-30

申请号：US12826568

申请日：2010-06-29

Applicant: Luc Albarede ,  Vijayakumar C. Venugopal

Inventor： Luc Albarede ,  Vijayakumar C. Venugopal

IPC: G06F19/00

CPC classification number: H01J37/32935 ,  G05B2219/31202

Abstract: A method for detecting an in-situ fast transient event within a processing chamber during substrate processing is provided. The method includes a set of sensors comparing a data set to a set of criteria (in-situ fast transient events) to determine if the first data set includes a potential in-situ fast transient event. If the first data set includes the potential in-situ fast transient event, the method also includes saving an electrical signature that occurs in a time period during which the potential in-situ fast transient event occurs. The method further includes comparing the electrical signature against a set of stored arc signatures. If a match is determined, the method yet also includes classifying the electrical signature as a first in-situ fast transient event and determining a severity level for the first in-situ fast transient event based on a predefined set of threshold ranges.

Abstract translation: 提供了一种用于在衬底处理期间检测处理室内的原位快速瞬变事件的方法。 该方法包括将数据集与一组标准（原位快速瞬变事件）进行比较的一组传感器，以确定第一数据集是否包括潜在的原位快速瞬变事件。 如果第一数据集包括潜在的原位快速瞬变事件，则该方法还包括保存在潜在的原位快速瞬变事件发生的时间段内发生的电特征。 该方法还包括将电特征与一组存储的电弧特征进行比较。 如果确定匹配，则该方法还包括将电特征分类为第一原位快速瞬时事件，并且基于预定义的一组阈值范围来确定第一原位快速瞬时事件的严重性级别。

公开(公告)号：US08989888B2

公开(公告)日：2015-03-24

申请号：US13381643

申请日：2010-06-29

Applicant: Gunsu Yun ,  Vijayakumar C. Venugopal

Inventor： Gunsu Yun ,  Vijayakumar C. Venugopal

IPC: G06F19/00 ,  H01L21/00 ,  H01L21/322 ,  H01L21/42 ,  H01L21/469 ,  G01R31/00 ,  H01J37/32 ,  G06F17/00

CPC classification number: H01J37/3299 ,  G06F17/00 ,  H01J37/32935

Abstract: A method for automatically detecting fault conditions and classifying the fault conditions during substrate processing is provided. The method includes collecting processing data by a set of sensors during the substrate processing. The method also includes sending the processing data to a fault detection/classification component. The method further includes performing data manipulation of the processing data by the fault detection/classification component. The method yet also includes executing a comparison between the processing data and a plurality of fault models stored within a fault library. Each fault model of the plurality of fault models represents a set of data characterizing a specific fault condition. Each fault model includes at least a fault signature, a fault boundary, and a set of principal component analysis (PCA) parameters.

Abstract translation: 提供了一种在基板处理过程中自动检测故障状况和分类故障条件的方法。 该方法包括在衬底处理期间通过一组传感器收集处理数据。 该方法还包括将处理数据发送到故障检测/分类组件。 该方法还包括通过故障检测/分类部件对处理数据进行数据处理。 该方法还包括执行处理数据与存储在故障库内的多个故障模型之间的比较。 多个故障模型的每个故障模型表示表征特定故障状况的一组数据。 每个故障模型至少包括故障签名，故障边界和一组主成分分析（PCA）参数。

公开(公告)号：US08144328B2

公开(公告)日：2012-03-27

申请号：US12418492

申请日：2009-04-03

Applicant: Vijayakumar C. Venugopal ,  Eric Pape ,  Jean-Paul Booth

Inventor： Vijayakumar C. Venugopal ,  Eric Pape ,  Jean-Paul Booth

IPC: G01N21/00

CPC classification number: G01N21/274 ,  G01J3/02 ,  G01J3/0205 ,  G01J3/0218 ,  G01J3/0294 ,  G01J3/443 ,  G01N21/68

Abstract: An arrangement for in-situ optical interrogation of plasma emission to quantitatively measure normalized optical emission spectra in a plasma chamber is provided. The arrangement includes a flash lamp and a set of quartz windows. The arrangement also includes a plurality of collimated optical assemblies, which is optically coupled to the set of quartz windows. The arrangement further includes a plurality of fiber optic bundles, which comprises at least an illumination fiber optic bundle, a collection fiber optic bundle, and a reference fiber optic bundle. The arrangement more over includes a multi-channel spectrometer, which is configured with at least a signal channel and a reference channel. The signal channel is optically coupled to at least the flash lamp, the set of quartz windows, the set of collimated optical assemblies, the illuminated fiber optic bundle, and the collection fiber optic bundle to measure a first signal.

Abstract translation: 提供了用于等离子体发射的原位光询问以定量测量等离子体室中的归一化光发射光谱的布置。 该装置包括闪光灯和一组石英窗。 该布置还包括多个准直的光学组件，其光耦合到该组石英窗口。 该布置还包括多个光纤束，其包括至少照明光纤束，收集光纤束和参考光纤束。 更多的布置包括多通道光谱仪，其被配置有至少一个信号通道和参考通道。 信号通道光学耦合到至少闪光灯，该组石英窗，该组准直光学组件，照明光纤束和收集光纤束以测量第一信号。

公开(公告)号：US20090251700A1

公开(公告)日：2009-10-08

申请号：US12418492

申请日：2009-04-03

Applicant: Vijayakumar C. Venugopal ,  Eric Pape ,  Jean-Paul Booth

Inventor： Vijayakumar C. Venugopal ,  Eric Pape ,  Jean-Paul Booth

IPC: G01N21/25

CPC classification number: G01N21/274 ,  G01J3/02 ,  G01J3/0205 ,  G01J3/0218 ,  G01J3/0294 ,  G01J3/443 ,  G01N21/68

Abstract: An arrangement for in-situ optical interrogation of plasma emission to quantitatively measure normalized optical emission spectra in a plasma chamber is provided. The arrangement includes a flash lamp and a set of quartz windows. The arrangement also includes a plurality of collimated optical assemblies, which is optically coupled to the set of quartz windows. The arrangement further includes a plurality of fiber optic bundles, which comprises at least an illumination fiber optic bundle, a collection fiber optic bundle, and a reference fiber optic bundle. The arrangement more over includes a multi-channel spectrometer, which is configured with at least a signal channel and a reference channel. The signal channel is optically coupled to at least the flash lamp, the set of quartz windows, the set of collimated optical assemblies, the illuminated fiber optic bundle, and the collection fiber optic bundle to measure a first signal.

Abstract translation: 提供了用于等离子体发射的原位光询问以定量测量等离子体室中的归一化光发射光谱的布置。 该装置包括闪光灯和一组石英窗。 该布置还包括多个准直的光学组件，其光耦合到该组石英窗口。 该布置还包括多个光纤束，其包括至少照明光纤束，收集光纤束和参考光纤束。 更多的布置包括多通道光谱仪，其被配置有至少一个信号通道和参考通道。 信号通道光学耦合到至少闪光灯，该组石英窗，该组准直光学组件，照明光纤束和收集光纤束以测量第一信号。

公开(公告)号：US07531369B2

公开(公告)日：2009-05-12

申请号：US11203365

申请日：2005-08-12

Applicant: Vijayakumar C. Venugopal

Inventor： Vijayakumar C. Venugopal

IPC: H01L21/66

CPC classification number: G01N21/8422 ,  G01B11/0625 ,  G01B11/0683

Abstract: A method of determining a parameter of interest during processing of a patterned substrate includes obtaining a measured net reflectance spectrum resulting from illuminating at least a portion of the patterned substrate with a light beam having a broadband spectrum, calculating a modeled net reflectance spectrum as a weighted incoherent sum of reflectances from different regions constituting the portion of the patterned substrate, and determining a set of parameters that provides a close match between the measured net reflectance spectrum and the modeled net reflectance spectrum. For wavelengths below a selected transition wavelength, a first optical model is used to calculate the reflectance from each region as a weighted coherent sum of reflected fields from thin film stacks corresponding to laterally distinct areas constituting the region. For wavelengths above the transition wavelength, a second optical model based on effective medium approximation is used to calculate the reflectance from each region.

Abstract translation: 在图案化衬底的处理期间确定感兴趣的参数的方法包括获得由具有宽带光谱的光束照射图案化衬底的至少一部分而得到的测量的净反射光谱，将模拟的净反射光谱计算为加权 构成图案化衬底部分的不同区域的反射率不相干和，并且确定提供测量的净反射光谱和建模的净反射光谱之间的紧密匹配的一组参数。 对于低于所选择的跃迁波长的波长，使用第一光学模型来计算来自每个区域的反射率，作为对应于构成区域的横向不同区域的薄膜叠层的反射场的加权相干和。 对于高于过渡波长的波长，使用基于有效介质近似的第二光学模型来计算每个区域的反射率。

公开(公告)号：US06979578B2

公开(公告)日：2005-12-27

申请号：US10401118

申请日：2003-03-27

Applicant: Vijayakumar C. Venugopal

Inventor： Vijayakumar C. Venugopal

IPC: G01B11/06 ,  G01N21/84 ,  H01L21/66

CPC classification number: G01N21/8422 ,  G01B11/0625 ,  G01B11/0683

Abstract: A method of determining a parameter of interest during processing of a patterned substrate includes obtaining a measured net reflectance spectrum resulting from illuminating at least a portion of the patterned substrate with a light beam having a broadband spectrum, calculating a modeled net reflectance spectrum as a weighted incoherent sum of reflectances from different regions constituting the portion of the patterned substrate, and determining a set of parameters that provides a close match between the measured net reflectance spectrum and the modeled net reflectance spectrum. For wavelengths below a selected transition wavelength, a first optical model is used to calculate the reflectance from each region as a weighted coherent sum of reflected fields from thin film stacks corresponding to laterally distinct areas constituting the region. For wavelengths above the transition wavelength, a second optical model based on effective medium approximation is used to calculate the reflectance from each region.

Abstract translation: 在图案化衬底的处理期间确定感兴趣的参数的方法包括获得由具有宽带光谱的光束照射图案化衬底的至少一部分而得到的测量的净反射光谱，将模拟的净反射光谱计算为加权 构成图案化衬底部分的不同区域的反射率不相干和，并且确定提供测量的净反射光谱和建模的净反射光谱之间的紧密匹配的一组参数。 对于低于所选择的跃迁波长的波长，使用第一光学模型来计算来自每个区域的反射率，作为对应于构成区域的横向不同区域的薄膜叠层的反射场的加权相干和。 对于高于过渡波长的波长，使用基于有效介质近似的第二光学模型来计算每个区域的反射率。

公开(公告)号：US06939811B2

公开(公告)日：2005-09-06

申请号：US10256251

申请日：2002-09-25

Applicant: Tom A. Kamp ,  Alan J. Miller ,  Vijayakumar C. Venugopal

Inventor： Tom A. Kamp ,  Alan J. Miller ,  Vijayakumar C. Venugopal

IPC: H01L21/00 ,  H01L21/3065 ,  H01L21/302

CPC classification number: H01L21/67253 ,  H01J37/321 ,  H01J37/32963 ,  H01L21/3065 ,  H01L21/67069

Abstract: An apparatus and method for etching a feature in a wafer with improved depth control and reproducibility is described. The feature is etched at a first etching rate and then at a second etching rate, which is slower than the first etching rate. An optical end point device is used to determine the etching depth and etching is stopped so that the feature has the desired depth. Two different etching rates provides high throughput with good depth control and reproducibility. The apparatus includes an etching tool in which a chuck holds the wafer to be etched. An optical end point device is positioned to measure the feature etch depth. An electronic controller communicates with the optical end point device and the etching tool to control the tool to reduce the etch rate part way through etching the feature and to stop the etching tool, so that that the feature is etched to the desired depth.

Abstract translation: 描述了一种用于蚀刻具有改进的深度控制和再现性的晶片中的特征的装置和方法。 以第一蚀刻速率蚀刻该特征，然后以比第一蚀刻速率慢的第二蚀刻速率蚀刻该特征。 使用光学终点装置来确定蚀刻深度并停止蚀刻，使得特征具有期望的深度。 两种不同的蚀刻速率提供了高吞吐量，具有良好的深度控制和重现性。 该装置包括蚀刻工具，其中卡盘夹持待蚀刻的晶片。 定位光学终点装置以测量特征蚀刻深度。 电子控制器与光学终点装置和蚀刻工具通信以控制工具，以通过蚀刻特征来减少蚀刻速率，并停止蚀刻工具，使得该特征被蚀刻到期望的深度。

公开(公告)号：US20120170039A1

公开(公告)日：2012-07-05

申请号：US13415763

申请日：2012-03-08

Applicant: Vijayakumar C. Venugopal ,  Eric Pape ,  Jean-Paul Booth

Inventor： Vijayakumar C. Venugopal ,  Eric Pape ,  Jean-Paul Booth

IPC: G01J3/42

CPC classification number: G01N21/274 ,  G01J3/02 ,  G01J3/0205 ,  G01J3/0218 ,  G01J3/0294 ,  G01J3/443 ,  G01N21/68

Abstract: A processing system having a chamber for in-situ optical interrogation of plasma emission to quantitatively measure normalized optical emission spectra is provided. The processing chamber includes a confinement ring assembly, a flash lamp, and a set of quartz windows. The processing chamber also includes a plurality of collimated optical assemblies, the plurality of collimated optical assemblies are optically coupled to the set of quartz windows. The processing chamber also includes a plurality of fiber optic bundles. The processing chamber also includes a multi-channel spectrometer, the multi-channel spectrometer is configured with at least a signal channel and a reference channel, the signal channel is optically coupled to at least the flash lamp, the set of quartz windows, the set of collimated optical assemblies, the illuminated fiber optic bundle, and the collection fiber optic bundle to measure a first signal.

Abstract translation: 提供一种具有用于等离子体发射的原位光询问室以定量测量归一化光发射光谱的处理系统。 处理室包括限制环组件，闪光灯和一组石英窗。 处理室还包括多个准直光学组件，多个准直光学组件光学耦合到该组石英窗口。 处理室还包括多个光纤束。 处理室还包括多通道光谱仪，多通道光谱仪配置有至少一个信号通道和一个参考通道，信号通道光学耦合到至少闪光灯，该组石英窗，该组 准直光学组件，照明光纤束和收集光纤束以测量第一信号。