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    In-situ generation of the molecular etcher carbonyl fluoride or any of its variants and its use
    11.
    发明授权
    In-situ generation of the molecular etcher carbonyl fluoride or any of its variants and its use 有权
    原位生成分子蚀刻剂羰基氟化物或其任何变体及其用途

    公开(公告)号：US08932406B2

    公开(公告)日：2015-01-13

    申请号：US13831613

    申请日：2013-03-15

    Applicant: Glenn Mitchell ,  Ramkumar Subramanian ,  Carrie L. Wyse ,  Robert Torres, Jr.

    Inventor： Glenn Mitchell ,  Ramkumar Subramanian ,  Carrie L. Wyse ,  Robert Torres, Jr.

    IPC: C25F1/00 ,  B01J19/08 ,  B01J19/12 ,  B08B7/00 ,  C01B31/00 ,  C23C16/44 ,  H01L21/311

    CPC classification number: B01J19/087 ,  B01J19/081 ,  B01J19/088 ,  B01J19/123 ,  B01J19/125 ,  B01J19/126 ,  B01J19/127 ,  B01J19/128 ,  B01J19/129 ,  B01J2219/0883 ,  B01J2219/0892 ,  C01B31/00 ,  C01B32/00 ,  C01B32/80 ,  C23C16/4405 ,  H01L21/31116 ,  Y02C20/30 ,  Y02P70/605

    Abstract: The molecular etcher carbonyl fluoride (COF2) or any of its variants, are provided for, according to the present invention, to increase the efficiency of etching and/or cleaning and/or removal of materials such as the unwanted film and/or deposits on the chamber walls and other components in a process chamber or substrate (collectively referred to herein as “materials”). The methods of the present invention involve igniting and sustaining a plasma, whether it is a remote or in-situ plasma, by stepwise addition of additives, such as but not limited to, a saturated, unsaturated or partially unsaturated perfluorocarbon compound (PFC) having the general formula (CyFz) and/or an oxide of carbon (COx) to a nitrogen trifluoride (NF3) plasma into a chemical deposition chamber (CVD) chamber, thereby generating COF2. The NF3 may be excited in a plasma inside the CVD chamber or in a remote plasma region upstream from the CVD chamber. The additive(s) may be introduced upstream or downstream of the remote plasma such that both NF3 and the additive(s) (and any plasma-generated effluents) are present in the CVD chamber during cleaning.

    Abstract translation: 根据本发明，提供分子蚀刻剂碳酰氟（COF 2）或其任何变体，以提高蚀刻和/或清洁和/或去除诸如不需要的膜和/或沉积物之类的材料的效率 处理室或基板（这里统称为“材料”）中的室壁和其它部件。 本发明的方法包括通过逐步添加添加剂，例如但不限于饱和的，不饱和的或部分不饱和的全氟化碳化合物（PFC）来点燃和维持等离子体，无论是远距离还是原位等离子体，其具有 通式（CyFz）和/或碳（COx）与三氟化氮（NF3）等离子体的氧化物进入化学沉积室（CVD）室，从而产生COF 2。 NF 3可以在CVD室内的等离子体中或在CVD室上游的远程等离子体区域中被激发。 添加剂可以被引入远程等离子体的上游或下游，使得NF 3和添加剂（和任何等离子体产生的流出物）在清洁期间都存在于CVD室中。

    METHOD FOR FORMING BOND BETWEEN DIFFERENT ELEMENTS
    15.
    发明申请
    METHOD FOR FORMING BOND BETWEEN DIFFERENT ELEMENTS 审中-公开
    在不同元素之间形成粘结的方法

    公开(公告)号：US20120318662A1

    公开(公告)日：2012-12-20

    申请号：US13518712

    申请日：2010-12-23

    Applicant: Hitoshi Furusho ,  Yuki Nohara ,  Hisayuki Watanabe ,  Yuichi Goto

    Inventor： Hitoshi Furusho ,  Yuki Nohara ,  Hisayuki Watanabe ,  Yuichi Goto

    IPC: B01J19/08 ,  C01B21/00

    CPC classification number: C08J3/28 ,  B01J19/081 ,  B01J19/087 ,  C08J2383/16 ,  H01L21/0242 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02592 ,  H01L21/02628 ,  H01L21/2254 ,  H01L31/0288 ,  H01L31/182 ,  H01L31/20 ,  H05H2245/123 ,  Y02E10/546 ,  Y02P70/521

    Abstract: The present invention provides a doping technique that forms a stable amorphous silicon film and a stable polycrystalline silicon film at a low temperature and simultaneously that imparts conductivity in an atmospheric pressure environment. A method for producing a compound containing a bond between different elements belonging to Group 4 to Group 15 of the periodic table, the method included: applying, at a low frequency and atmospheric pressure, high voltage to an inside of an electric discharge tube obtained by attaching high-voltage electrodes to a metal tube or an insulator tube or between flat plate electrodes while passing an introduction gas, so as to convert molecules present in the electric discharge tube or between the flat plate electrodes into a plasma; and applying the plasma to substances to be irradiated, the substances to be irradiated being two or more elementary substances or compounds.

    Abstract translation: 本发明提供一种掺杂技术，其在低温下形成稳定的非晶硅膜和稳定的多晶硅膜，同时在大气压环境中赋予导电性。 一种含有元素周期表第4〜15族的不同元素之间键合的化合物的制造方法，其特征在于，在低频大气压下，向由 在通过导入气体的同时将高压电极连接到金属管或绝缘体管或平板电极之间，以将存在于放电管中或平板电极之间的分子转化为等离子体; 并将等离子体施加到待照射的物质上，被照射物质是两种以上的元素或化合物。

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