公开(公告)号：US09267857B2

公开(公告)日：2016-02-23

申请号：US14543074

申请日：2014-11-17

Applicant: Honeywell International Inc.

Inventor： Carl Stewart ,  Richard Davis ,  Gilberto Morales

IPC: G01L9/00 ,  B81C1/00 ,  B81B3/00 ,  G01L7/08

CPC classification number: B81C1/00158 ,  B81B3/0021 ,  B81B3/007 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C2201/014 ,  B81C2201/0198 ,  B81C2203/0728 ,  G01L7/08 ,  G01L9/0042 ,  G01L9/0044 ,  G01L9/0047 ,  G01L9/0054 ,  G01L9/0055

Abstract: A pressure sensor having a diaphragm having a boss with a pattern. The diaphragm having a boss may be regarded as a bossed diaphragm. The bossed diaphragm may have higher sensitivity than a flat plate diaphragm having the same area as the bossed diaphragm. The bossed diaphragm may incorporate a simple cross pattern that can further improve the sensitivity and linearity of a pressure response of the diaphragm at low pressures. Reduction of sharp edges and corners of the boss and its legs around the periphery of the diaphragm may reduce high stress points and thus increase the burst pressure rating of the bossed diaphragm.

Abstract translation: 一种压力传感器，具有具有带图案的凸台的隔膜。 具有凸台的隔膜可以被认为是凸起的隔膜。 凸起的隔膜可能具有比具有与凸起隔膜相同面积的平板隔膜更高的灵敏度。 凸起的隔膜可以包括简单的交叉图案，其可以进一步提高隔膜在低压下的压力响应的灵敏度和线性。 凸起及其围绕隔膜周边的腿的尖锐边缘和拐角的减小可能会降低高应力点，从而提高凸起隔膜的爆破压力等级。

公开(公告)号：US08801894B2

公开(公告)日：2014-08-12

申请号：US12723176

申请日：2010-03-12

Applicant: Dan B. Millward

Inventor： Dan B. Millward

IPC: C23F1/00 ,  H01L21/306 ,  B23B5/00 ,  B23B7/00 ,  B32B3/12 ,  B32B7/00 ,  B82B1/00

CPC classification number: H01L21/02002 ,  B05D3/007 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y30/00 ,  H01L21/3086 ,  H01L21/31144

Abstract: Methods for fabricating sub-lithographic, nanoscale microchannels utilizing an aqueous emulsion of an amphiphilic agent and a water-soluble, hydrogel-forming polymer, and films and devices formed from these methods are provided.

公开(公告)号：US08784974B2

公开(公告)日：2014-07-22

申请号：US13473748

申请日：2012-05-17

Applicant: Dan B. Millward

Inventor： Dan B. Millward

IPC: B32B3/30 ,  B44C1/22 ,  H01L21/00 ,  H01L21/311 ,  H05K3/00

CPC classification number: H01L21/02002 ,  B05D3/007 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y30/00 ,  H01L21/3086 ,  H01L21/31144

Abstract: Methods for fabricating sub-lithographic, nanoscale microchannels utilizing an aqueous emulsion of an amphiphilic agent and a water-soluble, hydrogel-forming polymer, and films and devices formed from these methods are provided.

Abstract translation: 提供了利用两亲性试剂和水溶性水凝胶形成聚合物的水性乳液制备亚光刻纳米尺寸微通道的方法，以及由这些方法形成的膜和器件。

公开(公告)号：US20130270226A1

公开(公告)日：2013-10-17

申请号：US13912800

申请日：2013-06-07

Applicant: Micron Technology, Inc.

Inventor： Dan Millward

IPC: C23F1/02 ,  B05D3/00 ,  B05D5/00

CPC classification number: C23F1/02 ,  B05D3/00 ,  B05D5/00 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/0271 ,  H01L21/0273 ,  H01L21/3081 ,  H01L21/3083 ,  H01L21/3086 ,  Y10S438/947

Abstract: Block copolymers can be self-assembled and used in methods as described herein for sub-lithographic patterning, for example. The block copolymers can be diblock copolymers, triblock copolymers, multiblock copolymers, or combinations thereof. Such methods can be useful for making devices that include, for example, sub-lithographic conductive lines.

Abstract translation: 嵌段共聚物可以自组装并用于本文所述的用于亚光刻图案化的方法中。 嵌段共聚物可以是二嵌段共聚物，三嵌段共聚物，多嵌段共聚物或其组合。 这样的方法可用于制造包括例如亚光刻导电线的器件。

公开(公告)号：US08557128B2

公开(公告)日：2013-10-15

申请号：US11726674

申请日：2007-03-22

Applicant: Dan B. Millward

Inventor： Dan B. Millward

IPC: H01L21/302 ,  B82B3/00 ,  B82Y40/00

CPC classification number: H01L21/02002 ,  B05D3/007 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y30/00 ,  H01L21/3086 ,  H01L21/31144

Abstract: Methods for fabricating sub-lithographic, nanoscale microchannels utilizing an aqueous emulsion of an amphiphilic agent and a water-soluble, hydrogel-forming polymer, and films and devices formed from these methods are provided.

Abstract translation: 提供了利用两亲性试剂和水溶性水凝胶形成聚合物的水性乳液制备亚光刻纳米尺寸微通道的方法，以及由这些方法形成的膜和器件。

公开(公告)号：US08557044B2

公开(公告)日：2013-10-15

申请号：US11730120

申请日：2007-03-29

Applicant: Seok-whan Chung ,  Seok-jin Kang ,  Hyun-koo Jeong

Inventor： Seok-whan Chung ,  Seok-jin Kang ,  Hyun-koo Jeong

IPC: C23C16/50 ,  C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC classification number: B81C1/00396 ,  B81C2201/0198

Abstract: A shadow mask, a method of manufacturing the shadow mask, and a method of forming a thin film using the shadow mask are provided. The shadow mask includes an upper layer and a lower layer. The upper layer includes a first opening. The lower layer is formed on a lower surface of the upper layer around the first opening and includes an opening having the same size as the first opening. When the thin film is formed using the shadow mask, the lower layer of the shadow mask is close to the edge of a cavity of a substrate, and a position on which the thin film may be formed as defined by the lower layer of the shadow mask. Therefore, the thickness of the thin film can be uniform.

Abstract translation: 提供荫罩，荫罩的制造方法以及使用荫罩形成薄膜的方法。 荫罩包括上层和下层。 上层包括第一开口。 下层形成在第一开口周围的上层的下表面上，并且包括具有与第一开口相同尺寸的开口。 当使用荫罩形成薄膜时，荫罩的下层靠近基板的空腔的边缘，并且可以由薄膜的下层限定薄膜的位置 面具。 因此，薄膜的厚度可以是均匀的。

公开(公告)号：US08445592B2

公开(公告)日：2013-05-21

申请号：US13324216

申请日：2011-12-13

Applicant: Dan B. Millward

Inventor： Dan B. Millward

IPC: C08L71/02

CPC classification number: G03F7/40 ,  B32B3/10 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y30/00 ,  C08G81/02 ,  G03F7/12

Abstract: Methods for fabricating a random graft PS-r-PEO copolymer and its use as a neutral wetting layer in the fabrication of sublithographic, nanoscale arrays of elements including openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. In some embodiments, the films can be used as a template or mask to etch openings in an underlying material layer.

Abstract translation: 用于制造无规接枝PS-r-PEO共聚物的方法及其在制备亚光刻纳米级元素阵列的元件中作为中性润湿层的用途，包括使用自组装嵌段共聚物的开口和线性微通道，以及由这些方法形成的膜和器件 被提供。 在一些实施例中，膜可以用作模板或掩模来蚀刻下层材料层中的开口。

公开(公告)号：US08366947B2

公开(公告)日：2013-02-05

申请号：US13027183

申请日：2011-02-14

Applicant: Claus Burkhardt

Inventor： Claus Burkhardt

IPC: H01B13/00

CPC classification number: B81C1/00031 ,  B81C1/00404 ,  B81C2201/0198 ,  Y10T428/24612

Abstract: In a method for transferring nanostructures into a substrate, the following order of steps is used: decorating a substrate with nanomaterials (13), etching the substrate (10), applying a coating (15), removing the nanomaterials (13), and etching the substrate (10).

Abstract translation: 在将纳米结构转移到衬底中的方法中，使用以下步骤顺序：用纳米材料（13），蚀刻衬底（10），施加涂层（15），去除纳米材料（13）和蚀刻 基板（10）。

公开(公告)号：US08215074B2

公开(公告)日：2012-07-10

申请号：US12026123

申请日：2008-02-05

Applicant: Charles T. Black ,  Timothy J. Dalton ,  Bruce B. Doris ,  Carl Radens

Inventor： Charles T. Black ,  Timothy J. Dalton ,  Bruce B. Doris ,  Carl Radens

IPC: E04B2/00

CPC classification number: H01L21/0338 ,  B81B2203/0369 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y30/00 ,  H01L21/0337 ,  H01L51/0017 ,  Y10S977/882 ,  Y10S977/887 ,  Y10S977/888 ,  Y10T428/24479 ,  Y10T428/2457 ,  Y10T428/24612 ,  Y10T428/24736 ,  Y10T428/24802

Abstract: In one embodiment, Hexagonal tiles encompassing a large are divided into three groups, each containing ⅓ of all hexagonal tiles that are disjoined among one another. Openings for the hexagonal tiles in each group are formed in a template layer, and a set of self-assembling block copolymers is applied and patterned within each opening. This process is repeated three times to encompass all three groups, resulting in a self-aligned pattern extending over a wide area. In another embodiment, the large area is divided into rectangular tiles of two non-overlapping and complementary groups. Each rectangular area has a width less than the range of order of self-assembling block copolymers. Self-assembled self-aligned line and space structures are formed in each group in a sequential manner so that a line and space pattern is formed over a large area extending beyond the range of order.

Abstract translation: 在一个实施例中，包括大的六边形瓦片被分成三组，每组包含彼此分离的所有六边形瓦片的1/3。 每个组中的六边形瓦片的开口形成在模板层中，并且在每个开口内施加并组合一组自组装嵌段共聚物。 该过程重复三次以包含所有三组，导致在大面积上延伸的自对准图案。 在另一个实施例中，大面积被分成两个不重叠和互补组的矩形瓦片。 每个矩形区域的宽度小于自组装嵌段共聚物的顺序范围。 在每组中以顺序的方式形成自组装的自对准线和空间结构，使得在超过有序范围的大面积上形成线和空间图案。

公开(公告)号：US20110117744A1

公开(公告)日：2011-05-19

申请号：US12949409

申请日：2010-11-18

Applicant: Shinichi ITO

Inventor： Shinichi ITO

IPC: H01L21/311 ,  B05C13/00 ,  B29C59/02

CPC classification number: H01L21/31144 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  H01L21/0334 ,  H01L21/76816

Abstract: According to one embodiment, a first pattern is formed at first pattern coverage in a first region on a film to be processed and a second pattern is formed at second pattern coverage in a second region on the film to be processed. During the formation of the second pattern, a second film formed of a block copolymer containing film or the like is formed on the film to be processed and is self-assembled. A plurality of kinds of polymers contained in the self-assembled second film are selectively removed to leave at least one kind of polymer to form the second pattern to bring the second coverage close to the first pattern coverage.

Abstract translation: 根据一个实施例，在待处理的膜上的第一区域中以第一图案覆盖形成第一图案，并且在待处理的膜上的第二区域中以第二图案覆盖形成第二图案。 在第二图案的形成期间，在被加工的膜上形成由含有膜等的嵌段共聚物形成的第二膜，并且是自组装的。 选择性地除去包含在自组装的第二膜中的多种聚合物以留下至少一种聚合物以形成第二图案以使第二覆盖率接近第一图案覆盖。