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    Process of forming and controlling rough interfaces
    11.
    发明申请
    Process of forming and controlling rough interfaces 有权
    形成和控制粗糙界面的过程

    公开(公告)号：US20080176382A1

    公开(公告)日：2008-07-24

    申请号：US11827715

    申请日：2007-07-13

    Applicant: Bernard Aspar ,  Chrystelle Lagahe Blanchard ,  Nicolas Sousbie

    Inventor： Bernard Aspar ,  Chrystelle Lagahe Blanchard ,  Nicolas Sousbie

    IPC: H01L21/30

    CPC classification number: B81B3/001 ,  B81C1/00952 ,  B81C2201/115

    Abstract: The invention provides a method for forming a semiconductor component with a rough buried interface. The method includes providing a first semiconductor substrate having a first surface of roughness R1. The method further includes thermally oxidizing the first surface of the first semiconductor substrate to form an oxide layer defining an external oxide surface on the first semiconductor substrate and a buried oxide-semiconductor interface below the oxide surface, so that the buried oxide surface has a roughness R2 that is less than R1. The method also includes assembling the oxide surface of the first semiconductor substrate with a second substrate. The invention also provides a component formed according to the method of the invention.

    Abstract translation: 本发明提供一种用于形成具有粗糙掩埋界面的半导体部件的方法。 该方法包括提供具有粗糙度R 1的第一表面的第一半导体衬底。 该方法还包括热氧化第一半导体衬底的第一表面以形成限定第一半导体衬底上的外部氧化物表面的氧化物层和氧化物表面下方的掩埋氧化物半导体界面，使得掩埋氧化物表面具有粗糙度 R 2小于R 1。 该方法还包括用第二衬底组装第一半导体衬底的氧化物表面。 本发明还提供了根据本发明的方法形成的部件。

    Method for separating a useful layer and component obtained by said method
    12.
    发明申请
    Method for separating a useful layer and component obtained by said method 失效
    用于分离由所述方法获得的有用层和组分的方法

    公开(公告)号：US20060144816A1

    公开(公告)日：2006-07-06

    申请号：US10562931

    申请日：2004-07-01

    Applicant: Hubert Grange ,  Bernard Diem ,  Sylvie Viollet Bosson ,  Michel Borel

    Inventor： Hubert Grange ,  Bernard Diem ,  Sylvie Viollet Bosson ,  Michel Borel

    IPC: C03C15/00

    CPC classification number: B81B3/001 ,  B81C2201/115

    Abstract: A useful layer (1) is initially attached by a sacrificial layer (2) to a layer (3) forming a substrate. Before etching of the sacrificial layer (2), at least a part of the surface (4, 5) of at least one of the layers in contact with the sacrificial layer (2) is doped. After etching of the sacrificial layer (2), the surface (4, 5) is superficially etched so as to increase the roughness of its doped part. After doping, a mask (9) is deposited on a part of the useful layer (1) so as to delineate a doped zone and a non-doped zone of the surface (4, 5), one of the zones forming a stop after the superficial etching phase.

    Abstract translation: 有用层（1）最初由牺牲层（2）附着到形成衬底的层（3）上。 在蚀刻牺牲层（2）之前，掺杂与牺牲层（2）接触的至少一层的表面（4,5）的至少一部分。 在蚀刻牺牲层（2）之后，表面（4,5）被表面蚀刻以增加其掺杂部分的粗糙度。 在掺杂之后，在有用层（1）的一部分上沉积掩模（9），以便描绘表面（4,5）的掺杂区和非掺杂区，其中一个区在 表面蚀刻阶段。

    Reducing MEMS stiction by increasing surface roughness
    17.
    发明授权
    Reducing MEMS stiction by increasing surface roughness 有权
    通过增加表面粗糙度来减少MEMS粘结

    公开(公告)号：US09550664B2

    公开(公告)日：2017-01-24

    申请号：US14574784

    申请日：2014-12-18

    Applicant: FREESCALE SEMICONDUCTOR, INC.

    Inventor： Ruben B. Montez ,  Robert F. Steimle

    IPC: H01L29/84 ,  B81B3/00

    CPC classification number: B81B3/001 ,  B81B2201/0235 ,  B81B2203/0181 ,  B81C2201/115

    Abstract: A mechanism for reducing stiction in a MEMS device by decreasing surface area between two surfaces, such as a travel stop and travel stop region, that can come into close contact is provided. Reduction in contact surface area is achieved by increasing surface roughness of the travel stop region. This is achieved by depositing a polysilicon layer over a dielectric layer using gaseous hydrochloric acid as one of the reactants. A subsequent etch back is performed to further increase the roughness. The deposition of polysilicon and subsequent etch back may be repeated one or more times in order to obtain the desired roughness. A final polysilicon layer may then be deposited to achieve a desired thickness. This final polysilicon layer is patterned to form the travel stop regions. The rougher surface decreases the surface area available for contact and, in turn, decreases the area through which stiction can be imparted.

    Abstract translation: 提供了一种用于通过减小可以紧密接触的两个表面之间的表面积（例如行驶停止和行驶停止区域）来减小MEMS装置中的静摩擦的机构。 通过增加行驶停止区域的表面粗糙度来实现接触表面积的减小。 这是通过使用气态盐酸作为反应物之一在电介质层上沉积多晶硅层来实现的。 执行随后的回蚀以进一步增加粗糙度。 多晶硅的沉积和随后的回蚀可以重复一次或多次，以获得所需的粗糙度。 然后可以沉积最终的多晶硅层以达到期望的厚度。 对该最终多晶硅层进行图案化以形成行驶停止区域。 较粗糙的表面减小了可用于接触的表面积，并且进而降低了可赋予粘性的面积。

    Reducing MEMS stiction by deposition of nanoclusters
    19.
    发明授权
    Reducing MEMS stiction by deposition of nanoclusters 有权
    通过沉积纳米团簇减少MEMS粘结

    公开(公告)号：US09290380B2

    公开(公告)日：2016-03-22

    申请号：US13718614

    申请日：2012-12-18

    Applicant: Robert F. Steimle ,  Ruben B. Montez

    Inventor： Robert F. Steimle ,  Ruben B. Montez

    IPC: B81B3/00 ,  B81C1/00 ,  G01P15/08

    CPC classification number: B81B3/001 ,  B81B3/0005 ,  B81B2201/0221 ,  B81B2201/0235 ,  B81B2203/0181 ,  B81B2203/06 ,  B81C1/0096 ,  B81C2201/115 ,  G01P15/0802 ,  G01P2015/0871 ,  G01P2015/0874

    Abstract: A mechanism for reducing stiction in a MEMS device by decreasing surface area between two surfaces that can come into close contact is provided. Reduction in contact surface area is achieved by increasing surface roughness of one or both of the surfaces. The increased roughness is provided by forming a micro-masking layer on a sacrificial layer used in formation of the MEMS device, and then etching the surface of the sacrificial layer. The micro-masking layer can be formed using nanoclusters. When a next portion of the MEMS device is formed on the sacrificial layer, this portion will take on the roughness characteristics imparted on the sacrificial layer by the etch process. The rougher surface decreases the surface area available for contact in the MEMS device and, in turn, decreases the area through which stiction can be imparted.

    Abstract translation: 提供了一种用于通过减小可以紧密接触的两个表面之间的表面积来减小MEMS器件中的静摩擦的机构。 通过增加一个或两个表面的表面粗糙度来实现接触表面积的减小。 通过在用于形成MEMS器件的牺牲层上形成微掩模层，然后蚀刻牺牲层的表面来提供增加的粗糙度。 微掩模层可以使用纳米团簇形成。 当MEMS器件的下一部分形成在牺牲层上时，该部分将通过蚀刻工艺承受赋予牺牲层的粗糙度特性。 较粗糙的表面减小了可用于MEMS器件中的接触的表面积，并且进而降低了可赋予粘性的面积。

    MEMS devices with multi-component sacrificial layers
    20.
    发明授权
    MEMS devices with multi-component sacrificial layers 失效
    具有多组分牺牲层的MEMS器件

    公开(公告)号：US08300299B2

    公开(公告)日：2012-10-30

    申请号：US13098292

    申请日：2011-04-29

    Applicant: Ming-Hau Tung ,  Lior Kogut

    Inventor： Ming-Hau Tung ,  Lior Kogut

    IPC: G02B26/00 ,  H01L21/311

    CPC classification number: B81C1/00801 ,  B81B3/001 ,  B81B3/0072 ,  B81B2201/042 ,  B81C2201/0109 ,  B81C2201/017 ,  B81C2201/112 ,  B81C2201/115 ,  G02B26/001 ,  Y10T428/30 ,  Y10T428/31678 ,  Y10T428/31935

    Abstract: Methods of forming a protective coating on one or more surfaces of a microelectromechanical device are disclosed comprising the steps of forming a composite layer of a sacrificial material and a protective material, and selectively etching the sacrificial material to form a protective coating. The protective coatings of the invention preferably improve one or more aspects of the performance of the microelectromechanical devices in which they are incorporated. Also disclosed are microelectromechanical devices formed by methods of the invention, and visual display devices incorporating such devices.

    Abstract translation: 公开了在微机电装置的一个或多个表面上形成保护涂层的方法，其包括以下步骤：形成牺牲材料和保护材料的复合层，并选择性地蚀刻牺牲材料以形成保护涂层。 本发明的保护性涂层优选地改进了其中并入其中的微机电装置的性能的一个或多个方面。 还公开了通过本发明的方法形成的微机电装置以及包括这种装置的视觉显示装置。

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