公开(公告)号：US20030155859A1

公开(公告)日：2003-08-21

申请号：US10374263

申请日：2003-02-27

Inventor： Masayuki Nakamoto ,  Atsuo Inoue

IPC: H01J001/62

CPC classification number: H01J9/025 ,  H01J31/127 ,  H01J2201/30407 ,  H01J2201/30423

Abstract: A method of manufacturing a field emission device having emitter shapes, comprise the steps of forming a first original plate having a major surface provided with emitter shapes, by cutting a surface portion of a base material, forming a first material layer on the major surface of the first original plate on which the emitter shapes are provided; separating the first material layer from the first original plate, thereby obtaining a second original plate having recesses onto which the emitter shapes on the first original plate are transferred, forming a second material layer on a major surface of the second original plate on which the recesses are provided; and separating the second material layer from the second original plate, thereby to obtain a substrate having projections portions onto which shapes of the recesses of the second original plate are transferred.

Abstract translation: 一种制造具有发射体形状的场致发射器件的方法，包括以下步骤：通过切割基底材料的表面部分形成具有发射体形状的主表面的第一原始板，在主表面上形成第一材料层 提供发射体形状的第一原始板; 将第一材料层与第一原版板分离，从而获得具有凹部的第二原版，第一原版上的发射体形状转移到其上，在第二原版的主表面上形成第二材料层， 被提供; 并且将第二材料层与第二原版分离，从而获得具有第二原版的凹部的形状被转印到其上的突出部的基板。

公开(公告)号：US5828288A

公开(公告)日：1998-10-27

申请号：US518745

申请日：1995-08-24

Applicant: Gary W. Jones ,  Steven M. Zimmerman ,  Susan K. Schwartz Jones ,  Michael J. Costa ,  Jeffrey A. Silvernail

Inventor： Gary W. Jones ,  Steven M. Zimmerman ,  Susan K. Schwartz Jones ,  Michael J. Costa ,  Jeffrey A. Silvernail

IPC: H01J1/304 ,  H01C7/00

CPC classification number: H01J1/3042 ,  H01J2201/30423 ,  H01J2201/319

Abstract: A microelectronic field emitter device comprising a substrate, a conductive pedestal on said substrate, and an edge emitter electrode on said pedestal, wherein the edge emitter electrode comprises an emitter cap layer having an edge. The invention also contemplates a current limiter for a microelectronic field emitter device, which comprises a semi-insulating material selected from the group consisting of SiO, SiO+Cr (0 to 50% wt.), SiO2+Cr (0 to 50% wt.), SiO+Nb, Al2O3 and SixOyNz sandwiched between an electron injector and a hole injector. Another aspect of the invention relates to a microelectronic field emitter device comprising a substrate, an emitter conductor on such substrate, and a current limiter stack formed on said substrate, such stack having a top and at least one edge, a resistive strap on top of the stack, extending over the edge in electrical contact with the emitter conductor; and an emitter electrode on the current limiter stack over the resistive strap.

Abstract translation: 一种微电子场发射器件，包括衬底，所述衬底上的导电基座和所述基座上的边缘发射极，其中所述边缘发射电极包括具有边缘的发射极帽层。 本发明还考虑了一种用于微电子场发射器件的电流限制器，其包括选自由SiO，SiO + Cr（0至50％重量），SiO 2 + Cr（0至50重量％）组成的组的半绝缘材料 ），夹在电子注入器和空穴注入器之间的SiO + Nb，Al2O3和SixOyNz。 本发明的另一方面涉及一种微电子场发射器件，其包括衬底，在该衬底上的发射极导体，以及形成在所述衬底上的限流器叠层，该堆叠具有顶部和至少一个边缘， 堆叠，在与发射极导体电接触的边缘上延伸; 并且电流限制器堆叠上的电阻带上的发射极电极。

公开(公告)号：US5804909A

公开(公告)日：1998-09-08

申请号：US832841

申请日：1997-04-04

Applicant: Thomas Nilsson ,  John Song ,  Emmett Howard

Inventor： Thomas Nilsson ,  John Song ,  Emmett Howard

IPC: H01J3/02 ,  H01J19/24

CPC classification number: H01J3/022 ,  H01J2201/30423 ,  H01J2201/319

Abstract: An edge emission FED (100) includes a supporting substrate (110); a cathode (120) disposed on the supporting substrate (110); a ballast layer (130) disposed on the cathode (120); an emissive layer (140) disposed on the ballast layer (130) and defining an emissive edge (183); a field shaper layer (150) disposed on the emissive layer (140); a dielectric layer (160) disposed on the field shaper layer (150); a gate extraction electrode (170) disposed on the dielectric layer (160); an emission well (180) defined by the ballast layer (130), the emissive edge (183), the field shaper layer (150), the dielectric layer (160), and the gate extraction electrode (170); and an anode plate (188) opposing the gate extraction electrode (170).

Abstract translation: 边缘发射FED（100）包括支撑衬底（110）; 设置在所述支撑基板（110）上的阴极（120）; 设置在阴极（120）上的镇流器层（130）; 设置在所述镇流器层（130）上并限定发射边缘（183）的发射层（140）; 设置在所述发射层（140）上的场整形器层（150）; 设置在所述场整形器层（150）上的电介质层（160）; 设置在介电层（160）上的栅极引出电极（170）; 由镇流器层（130），发射边缘（183），场整形器层（150），电介质层（160）和栅极引出电极（170）限定的发射阱（180）。 以及与栅极引出电极（170）相对的阳极板（188）。

公开(公告)号：US5610471A

公开(公告)日：1997-03-11

申请号：US409479

申请日：1995-03-22

Applicant: Steve G. Bandy ,  Clifford K. Nishimoto ,  Christopher Webb ,  Ross A. LaRue

Inventor： Steve G. Bandy ,  Clifford K. Nishimoto ,  Christopher Webb ,  Ross A. LaRue

IPC: H01J1/304 ,  H01J1/46 ,  H01J1/62

CPC classification number: H01J1/3042 ,  H01J2201/30403 ,  H01J2201/30407 ,  H01J2201/30423

Abstract: A field emission device (100) uses single crystals in order to eliminate grain boundaries within some or all of the electrodes (103, 104, and 205). The elimination of grain boundaries reduces susceptibility to damage, improves stability of the device (100), and improves uniformity and reproducibility among devices. In a preferred embodiment, the emitter and gate electrodes (103 and 104 respectively) are formed from a single crystal thin film (302). In other embodiments, other structures are employed wherein one or more of the electrodes (103, 104, and 205) are formed from single crystals.

Abstract translation: 场发射器件（100）使用单晶以消除部分或全部电极（103,104和205）内的晶界。 消除晶界降低了损伤的易感性，提高了器件的稳定性（100），并提高了器件之间的均匀性和再现性。 在优选实施例中，发射极和栅电极（103和104分别）由单晶薄膜（302）形成。 在其他实施例中，采用其中一个或多个电极（103,104和205）由单晶形成的其它结构。

公开(公告)号：US20100136869A1

公开(公告)日：2010-06-03

申请号：US12627982

申请日：2009-11-30

Applicant: Naofumi Aoki ,  Shoji Nishida

Inventor： Naofumi Aoki ,  Shoji Nishida

IPC: H01J9/00 ,  H01J9/12

CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J1/3044 ,  H01J1/3046 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2201/30426 ,  H01J2201/30446 ,  H01J2201/30492 ,  H01J2201/30496 ,  H01J2329/0423 ,  H01J2329/0439 ,  H01J2329/0471 ,  H01J2329/0473

Abstract: The following method is provided: a method of readily fabricating an electron-emitting device, coated with a low-work function material, having good electron-emitting properties with high reproducibility such that differences in electron-emitting properties between electron-emitting devices are reduced. Before a structure is coated with the low-work function material, a metal oxide layer is formed on the structure.

Abstract translation: 提供以下方法：容易地制造涂覆有低功函数材料的电子发射器件的方法，其具有良好的电子发射特性，具有高重现性，使得电子发射器件之间电子发射特性的差异减小 。 在用低功函数材料涂覆结构之前，在结构上形成金属氧化物层。

公开(公告)号：US07317278B2

公开(公告)日：2008-01-08

申请号：US10763552

申请日：2004-01-23

Applicant: Heinz H. Busta

Inventor： Heinz H. Busta

IPC: H01J1/62 ,  H01J63/04

CPC classification number: H01J1/3042 ,  H01J1/3046 ,  H01J9/025 ,  H01J35/065 ,  H01J2201/30403 ,  H01J2201/30423

Abstract: A method of operating and process for fabricating an electron source. A conductive rod is covered by an insulating layer, by dipping the rod in an insulation solution, for example. The rod is then covered by a field emitter material to form a layered conductive rod. The rod may also be covered by a second insulating material. Next, the materials are removed from the end of the rod and the insulating layers are recessed with respect to the field emitter layer so that a gap is present between the field emitter layer and the rod. The layered rod may be operated as an electron source within a vacuum tube by applying a positive bias to the rod with respect to the field emitter material and applying a higher positive bias to an anode opposite the rod in the tube. Electrons will accelerate to the charged anode and generate soft X-rays.

Abstract translation: 一种用于制造电子源的操作和处理方法。 导电棒被绝缘层覆盖，例如通过将棒浸入绝缘溶液中。 然后将杆用场发射体材料覆盖以形成层状导电棒。 杆也可以被第二绝缘材料覆盖。 接下来，从棒的端部去除材料，并且绝缘层相对于场发射极层凹陷，使得在场发射极层和棒之间存在间隙。 层叠的杆可以通过相对于场致发射体材料向杆施加正偏压并且向与管中的杆相对的阳极施加更高的正偏压而在真空管内作为电子源来操作。 电子将加速到带电阳极并产生软X射线。

公开(公告)号：US20050029922A1

公开(公告)日：2005-02-10

申请号：US10900124

申请日：2004-07-28

Applicant: Masateru Taniguchi ,  Manabu Kitada ,  Kazuhito Nakamura ,  Satoru Kawata

Inventor： Masateru Taniguchi ,  Manabu Kitada ,  Kazuhito Nakamura ,  Satoru Kawata

IPC: H01J29/04 ,  H01J1/02 ,  H01J1/304 ,  H01J1/62 ,  H01J31/12 ,  H01J63/04

CPC classification number: H01J1/3046 ,  H01J29/04 ,  H01J31/127 ,  H01J2201/30423

Abstract: A field emission element has a gate electrode stacked on a substrate, an emitter electrode stacked on the gate electrode via an interlayer insulating layer, and an anode electrode formed on another substrate facing the emitter electrode. Further, the field emission element includes an anode pixel formed by the anode electrode and a generally rectangular fluorescent body formed thereon and a plurality of wells, each being formed in the emitter electrode and the interlayer insulating layer in a form of a narrow elongated hole. Here, the wells are disposed within a generally rectangular electron emitting area and at least a majority of the wells are arranged parallel to each other, and a length direction of the majority of the wells is substantially normal to that of the fluorescent body and the electron emitting area.

Abstract translation: 场致发射元件具有层叠在基板上的栅电极，经由层间绝缘层堆叠在栅电极上的发射极，以及在与发射电极相对的另一基板上形成的阳极电极。 此外，场发射元件包括由阳极电极和形成在其上的大致矩形的荧光体形成的阳极像素和多个阱，每个阱形成在狭长的细长孔的发射电极和层间绝缘层中。 这里，阱设置在大致矩形的电子发射区域内，并且至少大部分阱彼此平行地布置，并且大部分阱的长度方向基本上与荧光体和电子的长度方向垂直 发射区域。

公开(公告)号：US20040036402A1

公开(公告)日：2004-02-26

申请号：US10409363

申请日：2003-04-08

Applicant:

Inventor： Till Keesmann ,  Hubert Grosse-Wilde

IPC: H01J001/05

CPC classification number: H01J1/3042 ,  B82Y10/00 ,  H01J2201/30423 ,  H01J2201/30469 ,  Y10S977/876 ,  Y10S977/939

Abstract: A field emission cathode device consisting of an electrically conducting material and with a narrow, rod-shaped geometry or a knife edge, to achieve a high amplification of the electric field strength is characterized in that the electron-emitting part of the field emission cathode at least partly has preferred cylindrical host molecules and/or compounds with host compounds and/or cylindrical atomic networks, possibly with end caps with diameters measuring in the nanometer range.

Abstract translation: 由导电材料和狭窄的棒状几何形状或刀刃构成的场致发射阴极器件，以实现电场强度的高放大，其特征在于，场发射阴极的电子发射部分 最少部分具有优选的具有主体化合物和/或圆柱形原子网络的圆柱形主体分子和/或化合物，可能具有直径在纳米范围内的端盖。

公开(公告)号：US06384520B1

公开(公告)日：2002-05-07

申请号：US09449317

申请日：1999-11-24

Applicant: Benjamin E. Russ

Inventor： Benjamin E. Russ

IPC: H01J105

CPC classification number: H01J1/3042 ,  H01J2201/30423

Abstract: A cathode structure for use in field emission display (FED) devices includes four layers. A first layer consists of conducting lines supported on an insulating substrate. A second layer consists of thin non-conducting lines crossing the conducting lines. A third layer consists of a thick layer of non-conducting material with holes centered between the thin non-conducting lines of the second layer and extending over a portion of the thin non-conducting lines. A fourth layer consists of conducting lines containing holes of the same dimension as and aligned with the holes in the third layer exposing portions of the conducting lines of the first layer and of the non-conducting lines of the second layer. Emissive material is deposited on the exposed portions of the conducting lines of the first layer to produce a cathode for an FED device. The four-layer cathode structure improves emission characteristics such as current density and uniformity for planar edge emitters and surface emitters.

Abstract translation: 用于场发射显示（FED）装置的阴极结构包括四层。 第一层由支撑在绝缘基板上的导线组成。 第二层由穿过导线的细非导电线组成。 第三层由厚的非导电材料层组成，其中孔位于第二层的薄的非导电线之间并且在薄的非导电线的一部分上延伸。 第四层包括导电线，其包含与第三层中的孔相同尺寸的孔并与其对准，暴露第一层的导电线和第二层的非导电线的部分。 发射材料沉积在第一层的导电线的暴露部分上以产生用于FED器件的阴极。 四层阴极结构提高了平面边缘发射体和表面发射体的发射特性，如电流密度和均匀性。

公开(公告)号：US06278228B1

公开(公告)日：2001-08-21

申请号：US09357851

申请日：1999-07-21

Applicant: Yuichi Iwase ,  Masami Okita

Inventor： Yuichi Iwase ,  Masami Okita

IPC: H01J1304

CPC classification number: H01J3/022 ,  H01J29/467 ,  H01J2201/30423 ,  H01J2329/00

Abstract: A cold cathode field emission device having an electron emission layer (14), an insulating layer and a gate electrode (12) which are laminated one on another with the insulating layer positioned between the gate electrode, and the electron emission layer (14), and further having an opening portion which penetrates through at least the insulating layer and the electron emission layer, the electron emission layer having an edge portion for emitting electrons, the edge portion being projected on a wall surface of the opening portion, and the electron emission layer being connected to a power source through a resistance layer (23).

Abstract translation: 一种具有电子发射层（14），绝缘层和栅电极（12）的冷阴极场致发射器件，其中绝缘层位于栅电极和电子发射层之间， 并且还具有穿透至少绝缘层和电子发射层的开口部分，所述电子发射层具有用于发射电子的边缘部分，所述边缘部分突出在所述开口部分的壁表面上，并且所述电子发射 层通过电阻层（23）连接到电源。