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    Flat screen display device using controlled cold cathodes
    11.
    发明授权
    Flat screen display device using controlled cold cathodes 失效
    平板显示装置采用受控冷阴极

    公开(公告)号：US3882355A

    公开(公告)日：1975-05-06

    申请号：US31958772

    申请日：1972-12-29

    Applicant: IBM

    Inventor： DE WITT DAVID

    IPC: G09G3/12 ,  H01J29/04 ,  H01J31/12 ,  H05B41/00

    CPC classification number: H01J29/04 ,  H01J31/127 ,  H01J2201/308 ,  H01J2201/319

    Abstract: The display device has an electrically conductive phosphorcoated transparent screen, a panel element disposed in close parallel relation to the screen with the panel having an array of electron emitting regions on a semiconductor plate, each controlled by an adjacent memory cell in the plate. An enclosure which includes the screen surrounds the panel. An electric potential is established between the screen and the panel, and a vacuum produced in the enclosure. Preferably, the memory cells associated with the electron emitting regions are storage elements of a shift register which extend throughout the entire array of electron emitters. A binary signal is introduced into the shift register which is used to establish a predetermined pattern of electron emitting regions on the semiconductor panel. This produces a display on the spaced transparent screen when the emitted electrons strike the phosphor on the screen.

    Abstract translation: 显示装置具有导电磷光体透明屏幕，与屏幕紧密平行地设置的面板元件，其中面板在半导体板上具有由电子发射区域排列的阵列，各自由板中的相邻存储单元控制。 包括屏幕的外壳围绕面板。 在屏幕和面板之间建立电位，并在外壳中产生真空。 优选地，与电子发射区域相关联的存储单元是移动寄存器的存储元件，其遍及整个电子发射器阵列。 将二进制信号引入移位寄存器，该移位寄存器用于在半导体面板上建立电子发射区域的预定图案。 当发射的电子撞击屏幕上的荧光体时，这会在间隔开的透明屏幕上产生显示。

    Device for generating X-rays and use of such a device
    12.
    发明授权
    Device for generating X-rays and use of such a device 有权
    用于产生X射线和使用这种装置的装置

    公开(公告)号：US07839978B2

    公开(公告)日：2010-11-23

    申请号：US12158749

    申请日：2006-12-22

    Applicant: Godefridus Hendricus Maria Gubbels ,  Johannes Petrus Zijp

    Inventor： Godefridus Hendricus Maria Gubbels ,  Johannes Petrus Zijp

    IPC: H01J35/00 ,  H01J35/06

    CPC classification number: H01J1/30 ,  B82Y10/00 ,  H01J1/312 ,  H01J35/065 ,  H01J2201/30446 ,  H01J2201/308

    Abstract: Device for generating X-rays, comprising: a field emission cathode (10) configured to emit electrons when an electrical field is applied to the cathode (10); and an anode (20), the anode being configured to generate X-rays as a result of receiving electrons from the field emission cathode (10); wherein the cathode (10) comprises an electron emission surface (S) extending opposite the anode (20), the cathode (10) being configured to emit electrons substantially from the electron emission surface (S) during use.

    Abstract translation: 用于产生X射线的装置，包括：场致发射阴极（10），被配置成当电场施加到阴极（10）时发射电子; 和阳极（20），阳极被配置为由于从场致发射阴极（10）接收电子而产生X射线; 其中阴极（10）包括与阳极（20）相对延伸的电子发射表面（S），阴极（10）构造成在使用期间基本上从电子发射表面（S）发射电子。

    Device For Generating X-rays And Use Of Such A Device
    13.
    发明申请
    Device For Generating X-rays And Use Of Such A Device 有权
    用于产生X射线和使用这种装置的装置

    公开(公告)号：US20090296888A1

    公开(公告)日：2009-12-03

    申请号：US12158749

    申请日：2006-12-22

    Applicant: Godefridus Hendricus Maria Gubbels ,  Johannes Petrus Zijp

    Inventor： Godefridus Hendricus Maria Gubbels ,  Johannes Petrus Zijp

    IPC: H01J35/06 ,  H01J9/00

    CPC classification number: H01J1/30 ,  B82Y10/00 ,  H01J1/312 ,  H01J35/065 ,  H01J2201/30446 ,  H01J2201/308

    Abstract: Device for generating X-rays, comprising: —a field emission cathode (10) configured to emit electrons when an electrical field is applied to the cathode (10); and—an anode (20), the anode being configured to generate X-rays as a result of receiving electrons from the field emission cathode (10); wherein the cathode (10) comprises an electron emission surface (S) extending opposite the anode (20), the cathode (10) being configured to emit electrons substantially from the electron emission surface (S) during use.

    Abstract translation: 一种用于产生X射线的装置，包括： - 当电场施加到阴极（10）时被配置为发射电子的场致发射阴极（10）。 和阳极（20），阳极被配置为由于从场致发射阴极（10）接收电子而产生X射线; 其中阴极（10）包括与阳极（20）相对延伸的电子发射表面（S），阴极（10）构造成在使用期间基本上从电子发射表面（S）发射电子。

    Circuits and methods for electron-beam control
    17.
    发明申请
    Circuits and methods for electron-beam control 失效

    公开(公告)号：US20030102442A1

    公开(公告)日：2003-06-05

    申请号：US09997185

    申请日：2001-11-30

    Inventor： Richard Lee Hilton

    IPC: H01J037/063

    CPC classification number: B82Y10/00 ,  G11B9/10 ,  G11B9/14 ,  G11B9/1409 ,  G11B9/1418 ,  H01J3/00 ,  H01J2201/308

    Abstract: An electron-beam controller (EBC) capable of controlling the power in an electron-beam is disclosed. The EBC can be implemented with an emitter, an extractor, a current mirror, and an input current having a magnitude responsive to the desired electron beam current. An EBC suited for low-efficiency emitters is also disclosed. A method for controlling the power intensity of an electron-beam over time is also disclosed. The method includes the steps of: (1) providing an emitter at a first voltage, (2) providing a target at a second voltage, (3) introducing an extractor at a controllable third voltage, (4) estimating the actual electron beam energy by sensing the emitter current; and (5) adjusting the third voltage in response to the sensed emitter current.

    Method of making an integrated component of the cold cathode type
    18.
    发明授权
    Method of making an integrated component of the cold cathode type 失效
    制造冷阴极型集成部件的方法

    公开(公告)号：US4986787A

    公开(公告)日：1991-01-22

    申请号：US410850

    申请日：1989-09-22

    Applicant: Jean Olivier ,  Didier Pribat

    Inventor： Jean Olivier ,  Didier Pribat

    IPC: H01J1/304 ,  H01J9/02 ,  H01J21/10 ,  H01J31/12

    CPC classification number: H01J9/02 ,  H01J21/105 ,  H01J31/127 ,  H01J2201/308 ,  Y10S148/143

    Abstract: The disclosed microcomponent has a surface oxidated type of Si substrate, at least one cathode with caesiated surface made of n type monocrystalline Si being formed on this substrate. It is surrounded by monocrystalline p tyep Si. A layer of SiO.sub.2, formed on the p type Si, has an aperture facing the cathode. This aperture is self-sealed by the anode material.

    Abstract translation: 所公开的微组件具有表面氧化类型的Si衬底，在该衬底上形成至少一个由n型单晶Si制成的具有开孔表面的阴极。 它被单晶硅包围。 在p型Si上形成的SiO 2层具有面向阴极的孔。 该孔径由阳极材料自密封。

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