公开(公告)号：US20120145535A1

公开(公告)日：2012-06-14

申请号：US13315567

申请日：2011-12-09

Applicant: Yasushi KAMIYA ,  Einstein Noel Abarra ,  Yuta Konno

Inventor： Yasushi KAMIYA ,  Einstein Noel Abarra ,  Yuta Konno

IPC: H01L21/02 ,  B44C1/22 ,  C23C14/34

CPC classification number: H01J37/302 ,  G05B15/02 ,  H01J37/3053 ,  H01J2237/0044 ,  H01J2237/043 ,  H01J2237/334

Abstract: A method of processing a substrate in an apparatus including a substrate holder which holds the substrate, an ion source which emits an ion beam, a neutralizer which emits electrons, and a shutter which is arranged between a space in which the ion source and the neutralizer are arranged and a space in which the substrate holder is arranged, and configured to shield the ion beam traveling toward the substrate, includes adjusting an amount of electrons which are emitted by the neutralizer and reach the substrate holder during movement of the shutter.

Abstract translation: 一种在包括保持衬底的衬底保持器，发射离子束的离子源，发射电子的中和器和快门的设备中处理衬底的方法，该快门设置在离子源和中和器之间的空间中 布置有衬底保持器布置的空间，并且被构造成屏蔽朝向衬底行进的离子束，包括调节由中和器发射的电子的量并且在快门移动期间到达衬底保持器。

公开(公告)号：US20120126138A1

公开(公告)日：2012-05-24

申请号：US13300032

申请日：2011-11-18

Applicant: Kimitaka OZAWA

Inventor： Kimitaka OZAWA

IPC: H01J3/26

CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/304 ,  H01J2237/043 ,  H01J2237/24514

Abstract: The drawing apparatus of the present inventions includes a detector having a size for which the detector can simultaneously detect two adjacent charged particle beams among a plurality of charged particle beams, and configured to detect an intensity of a charged particle beam incident thereon. A controller is configured to perform a control of a position of the detector and a control of a blanking deflector array such that one of two adjacent charged particle beams is in a blanking state and the other is in a non-blanking state on the detector that is moved, and each of the plurality of charged particle beams becomes in a blanking state and a non-blanking state sequentially, to cause the detector to perform an output in parallel with the control, and to inspect a defect in each blanking deflector in the blanking deflector array based on the output.

Abstract translation: 本发明的绘图装置包括检测器，该检测器具有这样的尺寸，检测器可以同时检测多个带电粒子束中的两个相邻的带电粒子束，并且被配置为检测入射在其上的带电粒子束的强度。 控制器被配置为执行检测器的位置的控制和对消隐偏转器阵列的控制，使得两个相邻的带电粒子束中的一个处于消隐状态，另一个在检测器上处于非消隐状态， 多个带电粒子束中的每一个顺序地处于消隐状态和非消隐状态，以使检测器与控制并行地执行输出，并且检查在每个消隐偏转器中的缺陷 基于输出的消隐偏转器阵列。

公开(公告)号：US08148698B2

公开(公告)日：2012-04-03

申请号：US12714735

申请日：2010-03-01

Applicant: Tetsurou Nishiyama

Inventor： Tetsurou Nishiyama

IPC: H01J37/147

CPC classification number: H01J37/045 ,  H01J2237/043

Abstract: A blanking deflector 23 is of the coaxial type and includes a rod-like inner electrode 231 and a cylindrical outer electrode 232 enclosing the inner electrode 231 such that an air gap through which the charged particle beam B passes is formed between the inner and outer electrodes 231 and 232. The inner electrode 231 and the outer electrode 232 are formed by forming electrode films 231b and 232b of a metal over the surfaces of nonconducting base materials 231a and 232a, respectively, by vacuum deposition or sputtering. Further, each of the shaping deflector and the main deflector and sub-deflector for beam scanning includes a plurality of pairs of opposite electrodes, and each opposite electrode is formed by forming an electrode film of a metal over the surface of a nonconducting base material by vacuum deposition or sputtering.

Abstract translation: 消隐偏转器23是同轴型的，并且包括棒状内部电极231和包围内部电极231的圆柱形外部电极232，使得在内部和外部电极之间形成通过带电粒子束B的气隙 内电极231和外电极232分别通过真空沉积或溅射在不导电基材231a和232a的表面上形成金属的电极膜231b和232b而形成。 此外，成形偏转器和用于光束扫描的主偏转器和副偏转器中的每一个包括多对相对电极，并且每个相对电极通过在非导电基材的表面上形成金属的电极膜而形成， 真空沉积或溅射。

公开(公告)号：US20110226949A1

公开(公告)日：2011-09-22

申请号：US13050035

申请日：2011-03-17

Applicant: Dirk Zeidler ,  Ulrike Zeile

Inventor： Dirk Zeidler ,  Ulrike Zeile

IPC: H01J37/26

CPC classification number: H01J37/28 ,  H01J37/09 ,  H01J37/228 ,  H01J2237/043 ,  H01J2237/06333 ,  H01J2237/206 ,  H01J2237/24585

Abstract: A combined inspection system for inspecting an object disposable in an object plane 19, comprises a particle-optical system, which provides a particle-optical beam path 3, and a light-optical system, which provides a light-optical beam path 5; and a controller 60, wherein the light-optical system comprises at least one light-optical lens 30 arranged in the light-optical beam, which comprises a first lens surface facing the object plane which has two lens surfaces 34, 35 and a through hole 32, wherein the particle-optical system comprises a beam deflection device 23, in order to scan a primary particle beam 15 over a part of the sample plane 19, and wherein the controller is configured to control the beam deflection device 23 in such a manner that a deflected primary particle beam 15 intersects an optical axis 3 of the particle-optical beam path in a plane which is arranged inside the through hole.

Abstract translation: 用于检查在物平面19中一次性物体的组合检查系统包括提供粒子光束路径3的粒子光学系统和提供光束光路5的光学系统; 以及控制器60，其中所述光学系统包括布置在所述光 - 光束中的至少一个光 - 透镜30，所述至少一个光 - 透镜30包括面对所述物平面的第一透镜表面，所述第一透镜表面具有两个透镜表面34,35和通孔 32，其中所述粒子光学系统包括光束偏转装置23，以便在样本平面19的一部分上扫描初级粒子束15，并且其中控制器被配置为以这种方式控制束偏转装置23 偏转的一次粒子束15在布置在通孔内的平面中与粒子光束路径的光轴3相交。

公开(公告)号：US07786454B2

公开(公告)日：2010-08-31

申请号：US12210103

申请日：2008-09-12

Applicant: N. William Parker

Inventor： N. William Parker

IPC: G21K5/10 ,  G21G5/00

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/043 ,  H01J2237/1534

Abstract: A direct-write electron beam lithography system employing a patterned beam-defining aperture to enable the generation of high current-density shaped beams without the need for multiple beam-shaping apertures, lenses and deflectors is disclosed. Beam blanking is accomplished without the need for an intermediate crossover between the electron source and the wafer being patterned by means of a double-deflection blanker, which also facilitates proximity effect correction. A simple type of “moving lens” is utilized to eliminate off-axis aberrations in the shaped beam. A method for designing the patterned beam-defining aperture is also disclosed.

Abstract translation: 公开了一种使用图案化的光束限定孔径以便能够产生高电流密度成形光束而不需要多个光束成形孔，透镜和偏转器的直写式电子束光刻系统。 实现光束消隐，而不需要通过双偏转消隐器对电子源和晶片进行图案化之间的中间交叉，这也有助于邻近效应校正。 使用简单类型的“移动透镜”来消除成形光束中的离轴像差。 还公开了一种用于设计图案化光束限定孔的方法。

公开(公告)号：US20100163727A1

公开(公告)日：2010-07-01

申请号：US12344651

申请日：2008-12-29

Applicant: Paul D. Bell ,  Mark E. Masters ,  David S. Patrick

Inventor： Paul D. Bell ,  Mark E. Masters ,  David S. Patrick

IPC: G01N23/00

CPC classification number: H01J37/268 ,  G01R31/307 ,  H01J37/265 ,  H01J2237/043 ,  H01J2237/24564 ,  H01J2237/24592

Abstract: Methods for nanoprobing a device structure of an integrated circuit. The method may include scanning a primary charged particle beam across a first region of the device structure with at least one probe proximate to the first region and a second region of the device structure is masked from the primary charged particle beam. The method may further include collecting secondary electrons emitted from the first region of the device structure and the at least one probe to form a secondary electron image. The secondary electron image includes the first region and the at least one probe as imaged portions and the second region as a non-imaged portion. Alternatively, the second region may be scanned by the charged particle beam at a faster scan rate than the first region so that the second region is also an imaged portion of the secondary electron image.

Abstract translation: 用于纳米结构的集成电路的器件结构的方法。 该方法可以包括利用靠近第一区域的至少一个探针扫描穿过器件结构的第一区域的初级带电粒子束，并且器件结构的第二区域被从初级带电粒子束掩蔽。 该方法还可以包括收集从器件结构的第一区域发射的二次电子和至少一个探针以形成二次电子图像。 二次电子图像包括作为成像部分的第一区域和至少一个探针，以及作为非成像部分的第二区域。 或者，第二区域可以以比第一区域更快的扫描速率被带电粒子束扫描，使得第二区域也是二次电子图像的成像部分。

公开(公告)号：US20100025579A1

公开(公告)日：2010-02-04

申请号：US12184995

申请日：2008-08-01

Applicant: Robert B. Bilhorn

Inventor： Robert B. Bilhorn

IPC: G01N23/00

CPC classification number: H01J37/244 ,  H01J37/26 ,  H01J2237/043 ,  H01J2237/15 ,  H01J2237/2441 ,  H01J2237/2443 ,  H01J2237/24455 ,  H01J2237/2447

Abstract: An apparatus for use with an electron beam for imaging a sample. The apparatus has a down-conversion detector configured to detect an electron microscopy signal generated by the electron beam incident on the sample, a direct bombardment detector adjacent to the down-conversion detector and configured to detect the electron microscopy signal, and a mechanism selectively exposing the down-conversion detector and the direct bombardment detector to the electron microscopy signal. A method using the apparatus is also provided.

Abstract translation: 一种用于电子束用于成像样品的装置。 该装置具有下变换检测器，其被配置为检测由入射在样品上的电子束产生的电子显微镜信号，与下变频检测器相邻的直接轰击检测器，并且被配置为检测电子显微镜信号，以及选择性地暴露 下转换检测器和直接轰击检测器到电子显微镜信号。 还提供了使用该装置的方法。

公开(公告)号：US07638782B2

公开(公告)日：2009-12-29

申请号：US11204050

申请日：2005-08-16

Applicant: Kenji Yoneda ,  Masahiko Niwayama

Inventor： Kenji Yoneda ,  Masahiko Niwayama

IPC: G01K1/08 ,  H01J3/14 ,  H01J3/26

CPC classification number: H01J37/3171 ,  H01J37/3023 ,  H01J2237/0044 ,  H01J2237/043

Abstract: Impurity ions are implanted into a semiconductor wafer of which a capacitor insulting film is formed on a principal face. In this impurity ion implantation step, the impurity ions are implanted into the semiconductor wafer in the form of a pulsed beam that repeats ON-OFF operation intermittently.

Abstract translation: 将杂质离子注入到在主面上形成电容器绝缘膜的半导体晶片中。 在这种杂质离子注入步骤中，杂质离子以间断地重复开 - 关操作的脉冲束的形式注入半导体晶片。

公开(公告)号：US07589333B2

公开(公告)日：2009-09-15

申请号：US11540449

申请日：2006-09-29

Applicant: Michael A. Graf ,  Edward C. Eisner ,  William F. DiVergilio ,  Daniel R. Tieger

Inventor： Michael A. Graf ,  Edward C. Eisner ,  William F. DiVergilio ,  Daniel R. Tieger

IPC: H01J37/317 ,  H01J37/256

CPC classification number: H01J37/3171 ,  H01J37/08 ,  H01J37/3045 ,  H01J2237/043 ,  H01J2237/082 ,  H01J2237/24535 ,  H01J2237/24564 ,  H01J2237/24578 ,  H01J2237/30455 ,  H01J2237/30472

Abstract: An ion beam is rapidly switched off during ion implantation on detecting a beam instability. The ion beam is generated or provided by a non-arc discharge based ion source, such as an electron gun ion source or an RF ion source. The ion beam is scanned across a workpiece from a starting location toward an ending location. During the scanning, one or more beam characteristics are monitored, such as beam current, beam flux, shape, and the like. An instability is detected when one or more of the beam characteristics deviate from acceptable values or levels. The ion beam is rapidly turned off on the detected instability.

Abstract translation: 在离子注入期间，在检测到光束不稳定性时，离子束被快速关闭。 离子束由非电弧放电型离子源（例如电子枪离子源或RF离子源）产生或提供。 离子束从起始位置朝向终止位置跨工件扫描。 在扫描期间，监视一个或多个光束特性，例如光束电流，光束通量，形状等。 当一个或多个光束特性偏离可接受的值或水平时，检测到不稳定性。 在检测到的不稳定性下，离子束快速关闭。

公开(公告)号：US20080272300A1

公开(公告)日：2008-11-06

申请号：US12155347

申请日：2008-06-03

Applicant: Yuko Sasaki ,  Mitsugu Sato

Inventor： Yuko Sasaki ,  Mitsugu Sato

IPC: G01N23/00

CPC classification number: H01J37/265 ,  G01N23/2251 ,  H01J2237/043 ,  H01J2237/049 ,  H01J2237/28

Abstract: When conditions for an electron gun mainly represented by extraction voltage V1 and accelerating voltage V0 are changed, a charged particle beam is once focused on a fixed position by means of a condenser lens and a virtual cathode position is calculated from a lens excitation of the condenser lens at that time and the mechanical positional relation of the electron gun to set an optical condition. For more accurate setting of the optical condition, a deflecting electrode device is provided at a crossover position of the condenser lens and a voltage is applied to the deflecting electrode device at a constant period so as to control the lens excitation of the condenser lens such that the amount of movement of an image is minimized on an image display unit such as CRT.

Abstract translation: 当主要由提取电压V 1和加速电压V 0表示的电子枪的条件改变时，通过聚光透镜将带电粒子束一次聚焦在固定位置，并且从透镜激发计算虚拟阴极位置 此时的聚光透镜和电子枪的机械位置关系来设定光学条件。 为了更精确地设置光学条件，在聚光透镜的交叉位置处设置偏转电极装置，并且将电压以恒定周期施加到偏转电极装置，以便控制聚光透镜的透镜激发，使得 在诸如CRT的图像显示单元上图像的移动量​​最小化。