公开(公告)号：US20100108132A1

公开(公告)日：2010-05-06

申请号：US12261171

申请日：2008-10-30

Applicant: Loucas Tsakalakos ,  Bastiaan Arie Korevaar ,  Joleyn Eileen Balch ,  Jody Fronheiser ,  Bo Li ,  Anis Zribi

Inventor： Loucas Tsakalakos ,  Bastiaan Arie Korevaar ,  Joleyn Eileen Balch ,  Jody Fronheiser ,  Bo Li ,  Anis Zribi

IPC: H01L31/0352 ,  H01L21/20 ,  H01L29/06

CPC classification number: H01L21/02381 ,  B81B1/00 ,  B81B2201/0214 ,  B81B2201/0292 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L31/035227 ,  H01L31/03529

Abstract: Disclosed herein is a nanodevice. Disclosed herein too is a method of manufacturing a nanodevice. In one embodiment the nanodevice includes a first substrate; a second substrate; a nanowire; the nanowire contacting the first substrate and the second substrate; the nanowire comprising a metal, a semi-conductor or a combination thereof.

Abstract translation: 本文公开了一种纳米器件。 这里也公开了一种制造纳米器件的方法。 在一个实施例中，纳米器件包括第一衬底; 第二基板; 纳米线 所述纳米线与所述第一基板和所述第二基板接触; 纳米线包括金属，半导体或其组合。

公开(公告)号：US20090277271A1

公开(公告)日：2009-11-12

申请号：US11988417

申请日：2006-07-04

Applicant: Heikki Seppa ,  Kirsi Tappura ,  Jussi Tuppurainen ,  Tomi Mattila ,  Ari Alastalo ,  Hannu Helle ,  Aarne Oja

Inventor： Heikki Seppa ,  Kirsi Tappura ,  Jussi Tuppurainen ,  Tomi Mattila ,  Ari Alastalo ,  Hannu Helle ,  Aarne Oja

IPC: G01N29/02

CPC classification number: G01N29/022 ,  B81B2201/0292 ,  G01N29/036 ,  G01N29/2462 ,  G01N29/30 ,  G01N2291/0255 ,  G01N2291/0256 ,  G01N2291/106

Abstract: The present invention relates to a micromechanical sensor for analyzing liquid samples and an array of such sensors. The invention also concerns a method for sensing liquid samples and the use of longitudinal bulk acoustic waves for analyzing liquid phase samples micromechanically. The sensor comprises a body and a planar wave guide portion spaced from the body. At least one electro-mechanical transducer element are used for excitation of longitudinal bulk acoustic waves to the wave guide portion in response to electrical actuation and for converting acoustic waves into electrical signals. The wave guide portion is provided with a sample-receiving zone onto which the sample can be introduced. By means of the invention, the sensitivity of micromechanical liquid sensors can be improved.

Abstract translation: 本发明涉及用于分析液体样品的微机械传感器和这种传感器的阵列。 本发明还涉及用于感测液体样品的方法和使用纵向体声波来微机械地分析液相样品。 传感器包括主体和与主体间隔开的平面波导部分。 至少一个机电换能器元件用于响应于电致动并将声波转换成电信号而将纵向体声波激发到波导部分。 波导部分设置有可以将样品引入其上的样本接收区域。 通过本发明，可提高微机械液体传感器的灵敏度。

公开(公告)号：US20090261387A1

公开(公告)日：2009-10-22

申请号：US12314547

申请日：2008-12-12

Applicant: Antalne Adam ,  Istvan Barsony ,  Csaba Ducso ,  Magdolna Eros ,  Tibor Mohacsy ,  Karolyne Payer ,  Eva Vazsonyi

Inventor： Antalne Adam ,  Istvan Barsony ,  Csaba Ducso ,  Magdolna Eros ,  Tibor Mohacsy ,  Karolyne Payer ,  Eva Vazsonyi

IPC: H01L29/84 ,  H01L21/56

CPC classification number: B81C1/00246 ,  B81B2201/0264 ,  B81B2201/0292 ,  B81B2203/0127 ,  B81B2207/015 ,  B81C2201/0115 ,  B81C2203/0714 ,  B81C2203/0742 ,  G01L5/228 ,  G06F3/0414 ,  Y10T29/42

Abstract: The invention relates to a process for fabricating a monocrystalline Si-micromechanical element integrated with a CMOS circuit element within the CMOS technology, wherein a domain of second conducting property is formed within a substrate of first conducting property, here the second conducting property is reverse with respect to the first conducting property, then simultaneously with or immediately after this a domain of monocrystalline Si is formed within the substrate for fabricating a micromechanical element. After this, a CMOS circuit element is fabricated within the substrate through the known steps of CMOS technology and then the circuit element, as well as a portion of said domain for fabricating the micromechanical element that will carry the micromechanical element after its fabrication are covered with a protecting layer. Then by starting a front-side isotropic porous Si-etching from the exposed surface of said domain for fabricating the micromechanical element and by continuing the etching until said portion that will carry the micromechanical element after its fabrication becomes at least in its full extent underetched, a porous Si sacrificial layer is created which at least partially encloses said portion that will carry the micromechanical element after its fabrication. As a next step, the exposed surface of said porous Si sacrificial layer is passivated by applying a metallic thin film thereon and metallic contact pieces of the circuit element through the known steps of CMOS technology are formed. Finally, the metallic thin film that covers the exposed surface of the porous Si sacrificial layer is removed and the micromechanical element is formed by chemically dissolving said porous Si sacrificial layer.

Abstract translation: 本发明涉及一种在CMOS技术中制造与CMOS电路元件集成的单晶Si-微机械元件的方法，其中在第一导电性质的衬底内形成第二导电性质的畴，这里第二导电性能与 相对于第一导电性质，然后在该单晶硅的一个或多个之后，形成用于制造微机械元件的基板内。 之后，通过CMOS技术的已知步骤，在衬底内制造CMOS电路元件，然后电路元件以及用于制造将在其制造之后承载微机电元件的微机械元件的一部分用于覆盖微机电元件 保护层。 然后通过从用于制造微机电元件的所述畴的暴露表面开始前侧各向同性多孔Si蚀刻，并且通过继续蚀刻直到在其制造之后将携带微机电元件的部分至少在其全部程度上不被蚀刻， 产生多孔Si牺牲层，其至少部分地包围将在其制造之后承载微机械元件的所述部分。 作为下一步骤，通过在其上施加金属薄膜来钝化所述多孔Si牺牲层的暴露表面，并通过CMOS技术的已知步骤形成电路元件的金属接触片。 最后，去除覆盖多孔Si牺牲层的暴露表面的金属薄膜，并通过化学溶解所述多孔Si牺牲层形成微机械元件。

公开(公告)号：US20080277746A1

公开(公告)日：2008-11-13

申请号：US11651234

申请日：2007-01-09

Applicant: Sheng Teng Hsu ,  Fengyan Zhang

Inventor： Sheng Teng Hsu ,  Fengyan Zhang

IPC: H01L29/41 ,  H01L21/20 ,  C30B25/00

CPC classification number: B81C1/00095 ,  B81B2201/0292

Abstract: A nanowire sensor with a self-aligned top electrode support insulator, and associated fabrication process are provided. The method begins with a doped silicon-containing substrate. A growth-promotion metal is deposited overlying the substrate. A silicon nitride electrode support is formed overlying the growth-promotion metal. Nanowires are grown from exposed regions of the growth-promotion metal and an insulator is deposited over the nanowires. A top insulator layer is removed to expose tips of the nanowires, and a top electrode metal is deposited overlying the nanowire tips and silicon nitride electrode support. Next, a stack etch is selectively performed, etching down to the level of the growth-promotion metal. A top electrode island is left that is centered on the silicon nitride electrode support and connected to the growth-promotion metal via the nanowires. Then, the sensor is dipped in a buffered hydrofluoric (BHF) solution, to remove any remaining insulator and to expose the nanowires.

Abstract translation: 提供了具有自对准顶部电极支撑绝缘体的纳米线传感器以及相关的制造工艺。 该方法从掺杂的含硅衬底开始。 生长促进金属沉积在衬底上。 形成覆盖生长促进金属的氮化硅电极载体。 纳米线从生长促进金属的暴露区域生长，绝缘体沉积在纳米线上。 去除顶部绝缘体层以露出纳米线的尖端，并且沉积覆盖纳米线尖端和氮化硅电极支撑件的顶部电极金属。 接下来，选择性地执行堆叠蚀刻，蚀刻到生长促进金属的水平。 剩下的顶部电极岛位于氮化硅电极支架的中央，并通过纳米线连接到生长促进金属。 然后，将传感器浸入缓冲氢氟酸（BHF）溶液中，以除去任何剩余的绝缘体并露出纳米线。

公开(公告)号：US07435991B2

公开(公告)日：2008-10-14

申请号：US10588838

申请日：2004-12-20

Applicant: Hans-Peter Baer ,  Arnim Hoechst

Inventor： Hans-Peter Baer ,  Arnim Hoechst

IPC: H01L23/58

CPC classification number: B81C1/00182 ,  B81B2201/0292 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2203/0353 ,  B81C2201/0178

Abstract: A micromechanical sensor and a method for manufacturing same are described. A secure diaphragm restraint, independent of fluctuations in the cavern etching process due to the process technology, and a free design of the diaphragm are made possible by designing a suitable connection of the diaphragm in an oxide layer created by local oxidation. The micromechanical sensor includes, for example, a substrate, an external oxide layer formed in a laterally external area in the substrate, a diaphragm having multiple perforation holes formed in a laterally internal diaphragm area, a cavern etched in the substrate beneath the diaphragm, whereby the diaphragm is suspended in a suspension area of the external oxide layer which tapers toward connecting points of the diaphragm and the diaphragm is situated in its vertical height between a top side and a bottom side of the external oxide layer.

Abstract translation: 描述了一种微机械传感器及其制造方法。 通过设计通过局部氧化产生的氧化物层中的隔膜的适当连接，可以实现由于工艺技术而独立于洞穴蚀刻工艺的波动和隔膜的自由设计的安全膜片约束。 微机械传感器包括例如基板，形成在基板的横向外部区域中的外部氧化物层，具有形成在横向内部隔膜区域中的多个穿孔的隔膜，在隔膜下方的基板中蚀刻的基底，由此 隔膜悬挂在外部氧化物层的悬垂区域中，该外部氧化物层朝向隔膜的连接点逐渐变细，并且隔膜位于外部氧化物层的顶侧和底侧之间的垂直高度。

公开(公告)号：US07368312B1

公开(公告)日：2008-05-06

申请号：US11251740

申请日：2005-10-17

Applicant: Michael Scott Kranz ,  Robert Faye Elliott ,  Michael Ray Whitley ,  Marty Ray Williams ,  Philip John Reiner

Inventor： Michael Scott Kranz ,  Robert Faye Elliott ,  Michael Ray Whitley ,  Marty Ray Williams ,  Philip John Reiner

IPC: H01L21/00

CPC classification number: B81C1/00246 ,  B81B2201/0235 ,  B81B2201/0278 ,  B81B2201/0292 ,  G01P2015/082 ,  G01P2015/084 ,  G01P2015/0842

Abstract: The MEMS Sensor Suite on a Chip provides the capability, monolithically integrated onto one MEMS chip, to sense temperature, humidity, and two axes of acceleration. The device incorporates a MEMS accelerometer, a MEMS humidity sensor, and a MEMS temperature sensor on one chip. These individual devices incorporate proof masses, suspensions, humidity sensitive capacitors, and temperature sensitive resistors (thermistors) all fabricated in a common fabrication process that allows them to be integrated onto one micromachined chip. The device can be fabricated in a simple micromachining process that allows its size to be miniaturized for embedded and portable applications. During operation, the sensor suite chip monitors temperature levels, humidity levels, and acceleration levels in two axes. External circuitry allows sensor readout, range selection, and signal processing.

Abstract translation: 芯片上的MEMS传感器套件提供单一集成到一个MEMS芯片上的能力，以感测温度，湿度和两个加速轴。 该器件在一个芯片上集成了MEMS加速度计，MEMS湿度传感器和MEMS温度传感器。 这些单独的器件包含所有在通用制造工艺中制造的校准质量，悬浮液，湿度敏感电容器和温度敏感电阻器（热敏电阻器），从而允许它们集成到一个微加工芯片上。 该器件可以在简单的微加工工艺中制造，允许其尺寸被小型化以用于嵌入式和便携式应用。 在运行过程中，传感器套件芯片监测两个轴的温度水平，湿度水平和加速度水平。 外部电路允许传感器读数，范围选择和信号处理。

公开(公告)号：US20080072683A1

公开(公告)日：2008-03-27

申请号：US11809523

申请日：2007-06-01

Applicant: Chang Liu ,  Jonathan Engel ,  Nannan Chen ,  Jack Chen

Inventor： Chang Liu ,  Jonathan Engel ,  Nannan Chen ,  Jack Chen

IPC: G01L1/00

CPC classification number: G01P15/123 ,  B81B3/0021 ,  B81B2201/0292 ,  B81B2203/0118 ,  G01P5/04 ,  G01P15/0802

Abstract: A micromachined artificial sensor comprises a support coupled to and movable with respect to a substrate. A polymer, high-aspect ratio cilia-like structure is disposed on and extends out-of-plane from the support. A strain detector is disposed with respect to the support to detect movement of the support.

Abstract translation: 微加工人造传感器包括耦合到基板并且可相对于基板移动的支撑件。 聚合物，高纵横比纤毛状结构设置在支撑体上并在其外面延伸。 应变检测器相对于支撑件设置以检测支撑件的运动。

公开(公告)号：US20080068123A1

公开(公告)日：2008-03-20

申请号：US11982002

申请日：2007-10-31

Applicant: Vladimir Aksyuk ,  Maria Simon ,  Richart Slusher

Inventor： Vladimir Aksyuk ,  Maria Simon ,  Richart Slusher

IPC: G01J5/12 ,  H01H37/52 ,  H02N10/00

CPC classification number: H02N10/00 ,  B81B2201/0292 ,  G01J5/40

Abstract: A heat-sensitive apparatus includes a substrate with a top surface, one or more bars being rotatably joined to the surface and having bimorph portions, and a plate rotatably joined to the surface and substantially rigidly joined to the one or more bars. Each bimorph portion bends in response to being heated. The one or more bars and the plate are configured to cause the plate to move farther away from the top surface in response to the one or more bimorph portions being heated.

Abstract translation: 热敏设备包括具有顶表面的基底，一个或多个条可旋转地接合到该表面并具有双压电晶片部分，以及可旋转地接合到该表面并且基本上刚性地连接到一个或多个条的板。 每个双压电晶片部分响应于加热而弯曲。 一个或多个杆和板被配置成响应于加热的一个或多个双压电晶片部分而使板移动离开顶表面更远。

公开(公告)号：US07324323B2

公开(公告)日：2008-01-29

申请号：US11036438

申请日：2005-01-13

Applicant: Vladimir Anatolyevich Aksyuk ,  Maria Elina Simon ,  Richart Elliott Slusher

Inventor： Vladimir Anatolyevich Aksyuk ,  Maria Elina Simon ,  Richart Elliott Slusher

IPC: H01G5/00

CPC classification number: H02N10/00 ,  B81B2201/0292 ,  G01J5/40

Abstract: A heat-sensitive apparatus includes a substrate with a top surface, one or more bars being rotatably joined to the surface and having bimorph portions, and a plate rotatably joined to the surface and substantially rigidly joined to the one or more bars. Each bimorph portion bends in response to being heated. The one or more bars and the plate are configured to cause the plate to move farther away from the top surface in response to the one or more bimorph portions being heated.

公开(公告)号：US07271459B2

公开(公告)日：2007-09-18

申请号：US11169583

申请日：2005-06-30

Applicant: Makoto Asai

Inventor： Makoto Asai

IPC: H01L29/84

CPC classification number: B81C1/00626 ,  B81B2201/0235 ,  B81B2201/0292 ,  B81B2203/0118 ,  B81C2201/014 ,  B81C2201/019 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

Abstract: A physical quantity sensor includes: a semiconductor substrate; a cavity disposed in the substrate and extending in a horizontal direction of the substrate; a groove disposed on the substrate and reaching the cavity; a movable portion separated by the cavity and the groove so that the movable portion is movably supported on the substrate; and an insulation layer disposed on a bottom of the movable portion so that the insulation layer provides a roof of the cavity.

Abstract translation: 物理量传感器包括：半导体衬底; 设置在所述基板中并在所述基板的水平方向上延伸的空腔; 设置在所述基板上并到达所述空腔的凹槽; 可移动部分，由空腔和沟槽分隔开，使得可移动部分可移动地支撑在基板上; 以及设置在所述可动部分的底部上的绝缘层，使得所述绝缘层提供所述空腔的顶部。