公开(公告)号：US20120057216A1

公开(公告)日：2012-03-08

申请号：US12680550

申请日：2007-09-28

Applicant: Lucio Flores ,  Lior Kogut ,  Xiaoming Yan ,  Thanh Tu ,  Qi Luo ,  Brian J. Gally ,  Dana Chase ,  Gang Xu ,  Sheng-Tzung Huang ,  Chia Wei Yang ,  Yi Fan Su

Inventor： Lucio Flores ,  Lior Kogut ,  Xiaoming Yan ,  Thanh Tu ,  Qi Luo ,  Brian J. Gally ,  Dana Chase ,  Gang Xu ,  Sheng-Tzung Huang ,  Chia Wei Yang ,  Yi Fan Su

IPC: G02B26/00 ,  C23F1/02

CPC classification number: B81C1/00476 ,  B81B2201/042 ,  B81C2201/0109 ,  B81C2201/0132 ,  B81C2201/0142

Abstract: A MEMS comprising a sacrificial structure, which comprises a faster etching portion and a slower etching portion, exhibits reduced damage to structural features when in forming a cavity in the MEMS by etching away the sacrificial structure. The differential etching rates mechanically decouple structural layers, thereby reducing stresses in the device during the etching process. Methods and systems are also provided.

Abstract translation: 包括较快蚀刻部分和较慢蚀刻部分的牺牲结构的MEMS在通过蚀刻掉牺牲结构而在MEMS中形成空腔时表现出对结构特征的减小的损害。 差分蚀刻速率机械地去耦合结构层，从而在蚀刻过程中减少器件中的应力。 还提供了方法和系统。

公开(公告)号：US20110097903A1

公开(公告)日：2011-04-28

申请号：US12997942

申请日：2009-04-08

Applicant: Yoshiyuki Nozawa ,  Takashi Yamamoto

Inventor： Yoshiyuki Nozawa ,  Takashi Yamamoto

IPC: H01L21/3065 ,  G06F17/00

CPC classification number: B81C1/00619 ,  B81B2203/033 ,  B81C1/00531 ,  B81C1/00626 ,  B81C2201/0132 ,  B81C2201/014 ,  H01L21/3065 ,  H01L21/30655

Abstract: A method for manufacturing a silicon structure according to the present invention includes, in a so-called dry-etching process wherein gas-switching is employed, the steps of: etching a portion in the silicon region at a highest etching rate under a high-rate etching condition such that the portion does not reach the etch stop layer; subsequently etching under a transition etching condition in which an etching rate is decreased with time from the highest etching rate in the high-rate etching condition; and thereafter, etching the silicon region under a low-rate etching condition of a lowest etching rate in the transition etching condition.

Abstract translation: 根据本发明的制造硅结构的方法包括：在所谓的干法蚀刻工艺中采用气体切换，其步骤为：以高蚀刻速率蚀刻硅区中的部分， 速率蚀刻条件使得该部分不到达蚀刻停止层; 随后在高速蚀刻条件下从最高蚀刻速率随着时间从而蚀刻速率降低的过渡蚀刻条件下进行蚀刻; 然后在转变蚀刻条件下以最低蚀刻速率的低速蚀刻条件蚀刻硅区域。

公开(公告)号：US07837887B2

公开(公告)日：2010-11-23

申请号：US12542659

申请日：2009-08-17

Applicant: Darrell LaRue McReynolds ,  Kia Silverbrook

Inventor： Darrell LaRue McReynolds ,  Kia Silverbrook

IPC: G11B5/127

CPC classification number: H01L21/02057 ,  B41J2/1412 ,  B41J2/1601 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/164 ,  B81B2201/052 ,  B81B2203/033 ,  B81C1/00849 ,  B81C2201/0112 ,  B81C2201/0132

Abstract: A method of forming an ink supply channel for an inkjet printhead comprises the steps of: (i) providing a wafer having a frontside and a backside; (ii) etching a plurality of frontside trenches into the frontside; (iii) filling each of the trenches with a photoresist plug; (iv) forming nozzle structures on the frontside using MEMS fabrication processes; (v) etching a backside trench from the backside, the backside trench meeting with one or more of the plugs; (vi) removing a portion of each photoresist plug via the backside trench by subjecting the backside to a biased oxygen plasma etch, thereby exposing sidewall features in the backside trench; (vii) modifying the exposed sidewall features; and (viii) removing the photoresist plugs to form the ink supply channel. The ink supply channel connects the backside to the frontside.

Abstract translation: 一种形成用于喷墨打印头的供墨通道的方法包括以下步骤：（i）提供具有前侧和后侧的晶片; （ii）将多个前侧沟槽蚀刻到前侧; （iii）用光致抗蚀剂插塞填充每个沟槽; （iv）使用MEMS制造工艺在前侧形成喷嘴结构; （v）从背面蚀刻背面沟槽，所述背面沟槽与一个或多个所述插头相会合; （vi）通过使背面经受偏压的氧等离子体蚀刻，从而暴露背面沟槽中的侧壁特征，通过背侧沟槽去除每个光致抗蚀剂插塞的一部分; （vii）修改暴露的侧壁特征; 和（viii）去除光致抗蚀剂插头以形成供墨通道。 供墨通道将背面连接到前侧。

公开(公告)号：US07785481B2

公开(公告)日：2010-08-31

申请号：US11944247

申请日：2007-11-21

Applicant: Chuan Wei Wang

Inventor： Chuan Wei Wang

IPC: C23F1/00

CPC classification number: B81C1/00246 ,  B81C2201/0132 ,  B81C2203/0714 ,  B81C2203/0742

Abstract: A method for fabricating micromachined structures is provided. At least one cavity is formed on a substrate and then a dielectric material different from the material of the substrate is filled in the at least one cavity. Next, a circuitry layer including a first etch-resistant layer and a dielectric layer is formed above the at least one cavity filled with the dielectric material. A portion of the circuitry layer exposed by the first etch-resistant layer is then etched. Finally, the dielectric material in the at least one cavity is etched out.

Abstract translation: 提供了一种制造微加工结构的方法。 在衬底上形成至少一个空腔，然后将不同于衬底的材料的电介质材料填充在至少一个空腔中。 接下来，在填充有电介质材料的至少一个空腔的上方形成包括第一耐蚀刻层和电介质层的电路层。 然后蚀刻由第一耐蚀刻层暴露的电路层的一部分。 最后，蚀刻出至少一个空腔中的介电材料。

公开(公告)号：US07682956B2

公开(公告)日：2010-03-23

申请号：US11445067

申请日：2006-06-01

Applicant: Masaru P. Rao ,  Marco F. Aimi ,  Noel C. MacDonald

Inventor： Masaru P. Rao ,  Marco F. Aimi ,  Noel C. MacDonald

IPC: H01L21/3205 ,  H01L21/4763

CPC classification number: C23F4/00 ,  B81B2201/042 ,  B81B2203/033 ,  B81C1/00126 ,  B81C2201/0132 ,  Y10T29/49117

Abstract: The present invention relates, in general, to a method for three-dimensional (3D) microfabrication of complex, high aspect ratio structures with arbitrary surface height profiles in metallic materials, and to devices fabricated in accordance with this process. The method builds upon anisotropic deep etching methods for metallic materials previously developed by the inventors by enabling simplified realization of complex, non-prismatic structural geometries composed of multiple height levels and sloping and/or non-planar surface profiles. The utility of this approach is demonstrated in the fabrication of a sloping electrode structure intended for application in bulk micromachined titanium micromirror devices, however such a method could find use in the fabrication of any number of other microactuator, microsensor, microtransducer, or microstructure devices as well.

Abstract translation: 本发明一般涉及用于金属材料中具有任意表面高度分布的复合高纵横比结构的三维（3D）微细加工方法，以及根据该方法制造的器件。 该方法基于由本发明人先前开发的金属材料的各向异性深蚀刻方法，其通过使得能够简化实现由多个高度级别和倾斜和/或非平面表面轮廓组成的复杂的非棱柱结构几何形状。 在制造用于体积微加工的钛微镜器件中的倾斜电极结构的过程中证明了这种方法的实用性，然而这种方法可用于制造任何数量的其它微型致动器，微传感器，微传感器或微结构器件，如 好。

公开(公告)号：US20080160251A1

公开(公告)日：2008-07-03

申请号：US11647822

申请日：2006-12-29

Applicant: William J. Cummings

Inventor： William J. Cummings

IPC: B05D5/12 ,  B32B7/00

CPC classification number: B81C1/00579 ,  B81B2201/047 ,  B81C2201/0132 ,  Y10T428/24174

Abstract: A MEMS (Microelectromechanical system) device is described. The device includes a first layer on a substrate, and a sacrificial layer on or over the first layer, the first sacrificial layer being configured to be removed in a removal procedure. The device also includes a second layer on or over the first sacrificial layer, where the second layer is spaced apart from the first layer, and a shorting element electrically connecting the first and second layers, where at least a portion of the shorting element is removable in the removal procedure.

Abstract translation: 描述了MEMS（微机电系统）装置。 该器件包括在衬底上的第一层，以及在第一层上或第一层上的牺牲层，第一牺牲层被配置为在去除过程中被去除。 该装置还包括位于第一牺牲层之上或之上的第二层，其中第二层与第一层间隔开;以及短路元件，其电连接第一层和第二层，其中短路元件的至少一部分可移除 在删除过程中。

公开(公告)号：US20080050561A1

公开(公告)日：2008-02-28

申请号：US11813626

申请日：2006-01-10

Applicant: Helene Joisten ,  Robert Cuchet ,  Marcel Audoin ,  Gerard Barrois

Inventor： Helene Joisten ,  Robert Cuchet ,  Marcel Audoin ,  Gerard Barrois

IPC: B32B3/00 ,  B44C1/22

CPC classification number: B81B3/0054 ,  B81B2201/0292 ,  B81B2203/0118 ,  B81B2203/058 ,  B81C2201/0132 ,  B81C2203/032 ,  Y10T428/24479

Abstract: The invention relates to a method for producing a component with a first face of a plate-shaped structure involving the following steps: engraving a second face of the structure, which is opposite the first face, on a portion of its surface in order to define an area of reduced thickness, and; inclining the area of reduced thickness with regard to said structure. A component of this type has a recess between the plate-shaped structure and the inclined area of reduced thickness. The inclined area can support active elements that function according to a direction defined by the inclination.

Abstract translation: 本发明涉及一种用于制造具有板状结构的第一面的部件的方法，包括以下步骤：在其表面的一部分上雕刻结构的与第一面相对的第二面，以限定其表面的一部分 厚度减小的区域; 相对于所述结构倾斜减小厚度的面积。 这种类型的部件在板状结构和厚度减小的倾斜区域之间具有凹陷。 倾斜区域可以支持根据由倾斜度限定的方向起作用的有源元件。

公开(公告)号：US20080032439A1

公开(公告)日：2008-02-07

申请号：US11497726

申请日：2006-08-02

Applicant: Xiaoming Yan ,  Brian Arbuckle ,  Evgeni Gousev ,  Ming-Hau Tung

Inventor： Xiaoming Yan ,  Brian Arbuckle ,  Evgeni Gousev ,  Ming-Hau Tung

IPC: H01L21/00

CPC classification number: G02B26/001 ,  B81B2201/047 ,  B81C1/00595 ,  B81C2201/0132

Abstract: A method for etching a target material in the presence of a structural material with improved selectivity uses a vapor phase etchant and a co-etchant. Embodiments of the method exhibit improved selectivities of from at least about 2-times to at least about 100-times compared with a similar etching process not using a co-etchant. In some embodiments, the target material comprises a metal etchable by the vapor phase etchant. Embodiments of the method are particularly useful in the manufacture of MEMS devices, for example, interferometric modulators. In some embodiments, the target material comprises a metal etchable by the vapor phase etchant, for example, molybdenum and the structural material comprises a dielectric, for example silicon dioxide.

Abstract translation: 在具有改进的选择性的结构材料存在下蚀刻靶材料的方法使用气相蚀刻剂和共蚀刻剂。 与不使用共蚀刻剂的类似蚀刻工艺相比，该方法的实施例表现出从至少约2倍至至少约100倍的改进的选择性。 在一些实施例中，靶材料包括可由气相蚀刻剂蚀刻的金属。 该方法的实施例在MEMS器件（例如干涉式调制器）的制造中特别有用。 在一些实施例中，靶材料包括可由气相蚀刻剂（例如，钼）蚀刻的金属，并且结构材料包括电介质，例如二氧化硅。

公开(公告)号：US20070065963A1

公开(公告)日：2007-03-22

申请号：US10554642

申请日：2004-04-26

Applicant: Robert Van Kampen ,  Charles Smith ,  Jack Luo ,  Andrew Weeks

Inventor： Robert Van Kampen ,  Charles Smith ,  Jack Luo ,  Andrew Weeks

IPC: H01L21/00

CPC classification number: B81C1/0015 ,  B81C2201/0109 ,  B81C2201/0132 ,  H01H59/0009

Abstract: A method of manufacturing a micromechanical element wherein the method comprises the steps of providing a layer of base material, applying at least one at least partly sacrificial layer of an etchable material, patterning the at least partly sacrificial layer, to define at least a portion of the shape of the element, applying at least one structural layer of a mechanical material, patterning the structural layer to form at least a portion of the element, and removing at least partly the patterned at least partly sacrificial layer to release partly free the element. The mechanical material is selected from the group of conductive materials.

Abstract translation: 一种制造微机械元件的方法，其中所述方法包括以下步骤：提供基材层，施加可蚀刻材料的至少一个至少部分牺牲层，图案化所述至少部分牺牲层，以限定至少部分牺牲层 元件的形状，施加机械材料的至少一个结构层，图案化结构层以形成元件的至少一部分，以及至少部分去除图案化的至少部分牺牲层以释放部分地释放元件。 机械材料选自导电材料组。

公开(公告)号：US20070039170A1

公开(公告)日：2007-02-22

申请号：US11445067

申请日：2006-06-01

Applicant: Masaru Rao ,  Marco Aimi ,  Noel MacDonald

Inventor： Masaru Rao ,  Marco Aimi ,  Noel MacDonald

IPC: B44C1/22 ,  H01B13/00 ,  C23F1/00 ,  H01R43/00

CPC classification number: C23F4/00 ,  B81B2201/042 ,  B81B2203/033 ,  B81C1/00126 ,  B81C2201/0132 ,  Y10T29/49117

Abstract: The present invention relates, in general, to a method for three-dimensional (3D) microfabrication of complex, high aspect ratio structures with arbitrary surface height profiles in metallic materials, and to devices fabricated in accordance with this process. The method builds upon anisotropic deep etching methods for metallic materials previously developed by the inventors by enabling simplified realization of complex, non-prismatic structural geometries composed of multiple height levels and sloping and/or non-planar surface profiles. The utility of this approach is demonstrated in the fabrication of a sloping electrode structure intended for application in bulk micromachined titanium micromirror devices, however such a method could find use in the fabrication of any number of other microactuator, microsensor, microtransducer, or microstructure devices as well.

Abstract translation: 本发明一般涉及用于金属材料中具有任意表面高度分布的复合高纵横比结构的三维（3D）微细加工方法，以及根据该方法制造的器件。 该方法基于由本发明人先前开发的金属材料的各向异性深蚀刻方法，其通过使得能够简化实现由多个高度级别和倾斜和/或非平面表面轮廓组成的复杂的非棱柱结构几何形状。 在制造用于体积微加工的钛微镜器件中的倾斜电极结构的过程中证明了这种方法的实用性，然而这种方法可用于制造任何数量的其它微型致动器，微传感器，微传感器或微结构器件，如 好。