公开(公告)号：US20090189487A1

公开(公告)日：2009-07-30

申请号：US12354182

申请日：2009-01-15

Applicant: Michihiko Nishigaki ,  Toshihiko Nagano ,  Kazuhiko Itaya ,  Takashi Kawakubo

Inventor： Michihiko Nishigaki ,  Toshihiko Nagano ,  Kazuhiko Itaya ,  Takashi Kawakubo

IPC: H02N2/00

CPC classification number: H01H57/00 ,  B81B3/0021 ,  B81B2201/032 ,  H01G5/18 ,  H01H2057/006 ,  H01L41/094 ,  H01L41/0973

Abstract: An actuator includes a first beam, a first fixed part, a second beam, a first connective part, and a first fixed electrode. The first beam extends from a first fixed end to a first connective end, and the first fixed part connects the first fixed end and the substrate and supports the first beam above a main surface of the substrate with a gap. The second beam extends from a second connective end to a first action end and is provided in parallel to the first beam, and has a first division part divided by a first slit extending from the first action end toward the second connective end. The first connective part connects the first connective end and the second connective end and holds the second beam above the main surface of the substrate with a gap. The first fixed electrode is provided on the main surface of the substrate being configured to be opposed to a part of the first division part on a side of the first action end.

Abstract translation: 致动器包括第一光束，第一固定部分，第二光束，第一连接部分和第一固定电极。 第一光束从第一固定端延伸到第一连接端，并且第一固定部分连接第一固定端和衬底，并且将第一光束以间隙支撑在衬底的主表面上方。 第二光束从第二连接端部延伸到第一动作端部并且平行于第一光束提供，并且具有由从第一动作端向第二连接端部延伸的第一狭缝分割的第一分割部分。 第一连接部分连接第一连接端和第二连接端，并且将第二光束以间隙保持在基板的主表面上方。 第一固定电极设置在基板的主表面上，该主表面被配置为与第一动作端侧的第一分割部分的一部分相对。

公开(公告)号：US07477003B2

公开(公告)日：2009-01-13

申请号：US11681038

申请日：2007-03-01

Applicant: Fumikazu Takayanagi ,  Hirokazu Sanpei

Inventor： Fumikazu Takayanagi ,  Hirokazu Sanpei

IPC: H01L41/08

CPC classification number: B81B3/0072 ,  B81B2201/032 ,  B81B2203/0118 ,  G02B26/0866 ,  H01H61/02 ,  H01H2061/006

Abstract: There is provided a bimorph element including a silicon oxide layer, a high expansion coefficient layer that is formed on the silicon oxide layer and has a thermal expansion coefficient higher than a thermal expansion coefficient of the silicon oxide layer, and a deformation preventing film that covers a surface of the silicon oxide layer and prevents the silicon oxide layer from being deformed over time. The deformation preventing film has a transmission factor of moisture and oxygen lower than that of the silicon oxide layer. The deformation preventing film is a silicon oxide film that is formed with energy higher than that used in a case that forms the silicon oxide layer. The deformation preventing film is a silicon nitride film or a metallic film.

Abstract translation: 提供了一种双晶体元件，其包括氧化硅层，在氧化硅层上形成的具有比氧化硅层的热膨胀系数高的热膨胀系数的高膨胀系数层，以及覆盖 氧化硅层的表面，并防止氧化硅层随时间变形。 变形防止膜具有比氧化硅层低的水分和氧气的透过系数。 变形防止膜是形成能量高于形成氧化硅层的情况下使用的能量的氧化硅膜。 变形防止膜是氮化硅膜或金属膜。

公开(公告)号：US20080283373A1

公开(公告)日：2008-11-20

申请号：US11629586

申请日：2005-06-13

Applicant: Grégory Caruyer ,  Guillaume Bouche ,  Pascal Ancey

Inventor： Grégory Caruyer ,  Guillaume Bouche ,  Pascal Ancey

IPC: H01H57/00 ,  H01H11/00

CPC classification number: B81C1/0015 ,  B81B3/0021 ,  B81B2201/032 ,  B81B2203/0315 ,  B81B2203/04 ,  H01H57/00 ,  H01H2057/006 ,  H03H9/172 ,  H03H2009/241 ,  Y10T29/49105

Abstract: The invention relates to a device consisting of an electromechanical microswitch comprising mobile beam (2). According to the invention, at least part (14) of the beam forms the piezoelectric element of a piezoelectric actuator.

Abstract translation: 本发明涉及由包括移动光束（2）的机电微型开关组成的装置。 根据本发明，梁的至少一部分（14）形成压电致动器的压电元件。

公开(公告)号：US20080129796A1

公开(公告)日：2008-06-05

申请号：US11685074

申请日：2007-03-12

Applicant: Gregory John McAvoy ,  Vincent Patrick Lawlor ,  Kia Silverbrook

Inventor： Gregory John McAvoy ,  Vincent Patrick Lawlor ,  Kia Silverbrook

IPC: B41J2/05 ,  F01B29/00

CPC classification number: B41J2/14427 ,  B41J2002/14435 ,  B41J2202/03 ,  B41J2202/15 ,  B81B3/0024 ,  B81B2201/032 ,  B81B2201/052

Abstract: A thermal bend actuator, having a plurality of elements, is provided. The actuator comprises a first active element for connection to drive circuitry a second passive element mechanically cooperating with the first element. When a current is passed through the first element, the first element expands relative to the second element, resulting in bending of the actuator. The second element is comprised of a material having negative thermal expansion.

Abstract translation: 提供具有多个元件的热弯曲致动器。 致动器包括用于连接到驱动电路的第一有源元件，与第一元件机械配合的第二无源元件。 当电流通过第一元件时，第一元件相对于第二元件膨胀，导致致动器的弯曲。 第二元件由具有负热膨胀的材料组成。

公开(公告)号：US07371601B2

公开(公告)日：2008-05-13

申请号：US11127457

申请日：2005-05-12

Applicant: David B. Rich ,  Steven M. Crist

Inventor： David B. Rich ,  Steven M. Crist

IPC: H01L21/00 ,  G01P15/00

CPC classification number: B81C1/00142 ,  B81B2201/0235 ,  B81B2201/032 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81C2201/016 ,  G01P15/0802 ,  G01P15/123 ,  G01P2015/0828

Abstract: A technique for manufacturing a piezoresistive sensing structure includes a number of process steps. Initially, a piezoresistive element is implanted into a first side of an assembly that includes a semiconductor material. A passivation layer is then formed on the first side of the assembly over the element. The passivation layer is then removed from selected areas on the first side of the assembly. A first mask is then provided on the passivation layer in a desired pattern. A beam, which includes the element, is then formed in the assembly over at least a portion of the assembly that is to provide a cavity. The passivation layer provides a second mask, in the formation of the beam, that determines a width of the formed beam.

Abstract translation: 制造压阻感测结构的技术包括多个工艺步骤。 最初，将压阻元件植入包括半导体材料的组件的第一侧。 然后在元件的组件的第一侧上形成钝化层。 然后从组件的第一侧上的选定区域去除钝化层。 然后以期望的图案在钝化层上提供第一掩模。 包括元件的梁然后在组件中形成在组件的至少一部分上以提供空腔。 钝化层在形成光束时提供第二掩模，其确定形成的光束的宽度。

公开(公告)号：US20080087478A1

公开(公告)日：2008-04-17

申请号：US11757341

申请日：2007-06-01

Applicant: Harold Stalford

Inventor： Harold Stalford

IPC: B60K1/00

CPC classification number: B81B3/0024 ,  B81B2201/032 ,  B81B2201/034 ,  B81B2201/037 ,  B81B2201/051 ,  H02N1/008

Abstract: A micro transport machine may include a substrate and a movable device comprising a drive component responsive to a wireless power source. The movable device is operable to move between a plurality of disparate areas on the substrate.

Abstract translation: 微型运输机器可以包括基板和可移动装置，其包括响应于无线电源的驱动部件。 可移动装置可操作以在基板上的多个不同区域之间移动。

公开(公告)号：US20070194656A1

公开(公告)日：2007-08-23

申请号：US11681038

申请日：2007-03-01

Applicant: FUMIKAZU TAKAYANAGI ,  HIROKAZU SANPEI

Inventor： FUMIKAZU TAKAYANAGI ,  HIROKAZU SANPEI

IPC: H01H61/00 ,  H02N10/00 ,  H01L29/84 ,  F01B29/10

CPC classification number: B81B3/0072 ,  B81B2201/032 ,  B81B2203/0118 ,  G02B26/0866 ,  H01H61/02 ,  H01H2061/006

Abstract: There is provided a bimorph element including a silicon oxide layer, a high expansion coefficient layer that is formed on the silicon oxide layer and has a thermal expansion coefficient higher than a thermal expansion coefficient of the silicon oxide layer, and a deformation preventing film that covers a surface of the silicon oxide layer and prevents the silicon oxide layer from being deformed over time. The deformation preventing film has a transmission factor of moisture and oxygen lower than that of the silicon oxide layer. The deformation preventing film is a silicon oxide film that is formed with energy higher than that used in a case that forms the silicon oxide layer. The deformation preventing film is a silicon nitride film or a metallic film.

Abstract translation: 提供了一种双晶体元件，其包括氧化硅层，在氧化硅层上形成的具有比氧化硅层的热膨胀系数高的热膨胀系数的高膨胀系数层，以及覆盖 氧化硅层的表面，并防止氧化硅层随时间变形。 变形防止膜具有比氧化硅层低的水分和氧气的透过系数。 变形防止膜是形成能量高于形成氧化硅层的情况下使用的能量的氧化硅膜。 变形防止膜是氮化硅膜或金属膜。

公开(公告)号：US20060270088A1

公开(公告)日：2006-11-30

申请号：US10543441

申请日：2003-09-23

Applicant: Frank Fischer ,  Markus Lutz

Inventor： Frank Fischer ,  Markus Lutz

IPC: H01L21/00 ,  H01L29/84

CPC classification number: G01L9/0042 ,  B81B3/0081 ,  B81B2201/0264 ,  B81B2201/032 ,  B81B2203/0127 ,  B81B2203/0384 ,  B81C2201/0108

Abstract: An epitaxial layer having monocrystalline and polycrystalline silicon grown side by side is deposited on a substrate, a region being exposed as a vertically movable polycrystalline diaphragm, especially for a pressure sensor, by etching. The poly/mono transition regions on both sides of the diaphragm each nave an oblique profile such that the monocrystalline silicon extends into the diaphragm region in the form of an overhang above the polycrystalline silicon. Piezo elements are implanted in the overhang.

Abstract translation: 将具有并排生长的单晶硅和多晶硅的外延层沉积在基板上，通过蚀刻将区域暴露为可垂直移动的多晶膜，特别是用于压力传感器。 膜片两侧的多晶硅/单相转变区域分别呈倾斜分布，使得单晶硅以多晶硅上方的突出形式延伸到膜片区域中。 压电元件植入突出端。

公开(公告)号：US20060258038A1

公开(公告)日：2006-11-16

申请号：US11127457

申请日：2005-05-12

Applicant: David Rich ,  Steven Crist

Inventor： David Rich ,  Steven Crist

IPC: H01L21/00

CPC classification number: B81C1/00142 ,  B81B2201/0235 ,  B81B2201/032 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81C2201/016 ,  G01P15/0802 ,  G01P15/123 ,  G01P2015/0828

Abstract: A technique for manufacturing a piezoresistive sensing structure includes a number of process steps. Initially, a piezoresistive element is implanted into a first side of an assembly that includes a semiconductor material. A passivation layer is then formed on the first side of the assembly over the element. The passivation layer is then removed from selected areas on the first side of the assembly. A first mask is then provided on the passivation layer in a desired pattern. A beam, which includes the element, is then formed in the assembly over at least a portion of the assembly that is to provide a cavity. The passivation layer provides a second mask, in the formation of the beam, that determines a width of the formed beam.

Abstract translation: 制造压阻感测结构的技术包括多个工艺步骤。 最初，将压阻元件植入包括半导体材料的组件的第一侧。 然后在元件的组件的第一侧上形成钝化层。 然后从组件的第一侧上的选定区域去除钝化层。 然后以期望的图案在钝化层上提供第一掩模。 包括元件的梁然后在组件中形成在组件的至少一部分上以提供空腔。 钝化层在形成光束时提供第二掩模，其确定形成的光束的宽度。

公开(公告)号：US07084554B2

公开(公告)日：2006-08-01

申请号：US11017498

申请日：2004-12-20

Applicant: Baomin Xu ,  William S. Wong

Inventor： Baomin Xu ,  William S. Wong

IPC: H01L41/08

CPC classification number: B81B3/0024 ,  B81B2201/032 ,  H01L41/094 ,  H01L41/22 ,  H01L41/313 ,  H01L41/314 ,  H01L41/337 ,  Y10T29/42 ,  Y10T29/49126 ,  Y10T29/49128 ,  Y10T29/4913 ,  Y10T29/49147 ,  Y10T29/49155 ,  Y10T29/49156

Abstract: A micro-electromechanical dimensioned bimorph structure includes a first element layer structure, and a second element layer structure. The element layer structures are provided in various combinations, including piezoelectric/piezoelectric, antiferroelectric/antiferroelectric or antiferroelectric/piezoelectric. The layer thickness of the element structure is less than 100 μm. A bonding layer bonds the first element structure directly to the second element structure, and the bonding layer thickness is less than 10 μm. The bimorph structure can be made in various forms including a cantilever or a diaphragm. Microfluidic devices using the bimorph structures may also be constructed.

Abstract translation: 微机电尺寸双压电晶片结构包括第一元件层结构和第二元件层结构。 元件层结构以各种组合提供，包括压电/压电，反铁电/反铁电或反铁电/压电。 元件结构的层厚小于100μm。 接合层将第一元件结构直接结合到第二元件结构，并且结合层厚度小于10μm。 双压电晶片结构可以以各种形式制成，包括悬臂或隔膜。 也可以构造使用双压电晶片结构的微流体装置。