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公开(公告)号：US20230178328A1
公开(公告)日：2023-06-08
申请号：US17913141
申请日：2021-03-18
Applicant: ASML Netherlands B.V.
Inventor： Yongxin WANG , Zhonghua DONG , Xiaoyu JI , Shahedul HOQUE , Weiming REN , Xuedong LIU , Guofan YE , Kuo-Chin CHIEN
IPC: H01J37/147
CPC classification number: H01J37/1474 , H01J2237/1504
Abstract: An apparatus includes a first charged particle beam manipulator positioned in a first layer configured to influence a charged particle beam and a second charged particle beam manipulator positioned in a second layer configured to influence the charged particle beam. The first and second charged particle beam manipulators may each include a plurality of electrodes having a first set of opposing electrodes and a second set of opposing electrodes. A first driver system electrically connected to the first set may be configured to provide a plurality of discrete output states to the first set. A second driver system electrically connected to the second set may be configured to provide a plurality of discrete output states to the second set. The first and second charged-particle beam manipulators may each comprise a plurality of segments; and a controller having circuitry configured to individually control operation of each of the plurality of segments.
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公开(公告)号：US20230176492A1
公开(公告)日：2023-06-08
申请号：US18161140
申请日：2023-01-30
Applicant: Carl Zeiss SMT GmbH , ASML NETHERLANDS B.V.
Inventor： Toralf GRUNER , Norman BAER , Koos VAN BERKEL , Laurentius Johannes Adrianus VAN BOKHOVEN , Maike LORENZ , Thomas MONZ , Eva SCHNEIDER , Hans-Michael STIEPAN , Bob STREEFKERK , André DIRAUF
CPC classification number: G03F7/70891 , G02B7/1815 , G02B2207/101 , G03F7/707
Abstract: Disclosed are an optical system, in particular for microlithography, and a method for operating an optical system. According to one disclosed aspect, the optical system includes at least one mirror (100, 500, 600) having an optical effective surface (101, 501, 601) and a mirror substrate (110, 510, 610), wherein at least one cooling channel (115, 515, 615) in which a cooling fluid is configured to flow is arranged in the mirror substrate, for dissipating heat that is generated in the mirror substrate due to absorption of electromagnetic radiation incident from a light source on the optical effective surface, and a unit (135, 535, 635) to adjust the temperature and/or the flow rate of the cooling fluid either dependent on a measured quantity that characterizes the thermal load in the mirror substrate or dependent on an estimated/expected thermal load in the mirror substrate for a given power of the light source.
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213.发明公开公开(公告)号：US20230176491A1
公开(公告)日：2023-06-08
申请号：US17923913
申请日：2021-04-21
Applicant: ASML Netherlands B.V.
Inventor： Olger Victor ZWIER , Maurits VAN DER SCHAAR , Hilko Dirk BOS , Hans VAN DER LAAN , S.M. Masudur Rahman AL ARIF , Henricus Wilhelmus Maria Van Buel , Armand Eugene Albert KOOLEN , Victor CALADO , Kaustuve BHATTACHARYYA , Jin LIAN , Sebastianus Adrianus GOORDEN , Hui Quan LIM
IPC: G03F7/20
CPC classification number: G03F7/70641 , G03F7/70558 , G03F7/70633 , G03F7/70625
Abstract: Disclosed is a substrate and associated patterning device. The substrate comprises at least one target arrangement suitable for metrology of a lithographic process, the target arrangement comprising at least one pair of similar target regions which are arranged such that the target arrangement is, or at least the target regions for measurement in a single direction together are, centrosymmetric. A metrology method is also disclosed for measuring the substrate. A metrology method is also disclosed comprising which comprises measuring such a target arrangement and determining a value for a parameter of interest from the scattered radiation, while correcting for distortion of the metrology apparatus used.
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公开(公告)号：US11668661B2
公开(公告)日：2023-06-06
申请号：US17019149
申请日：2020-09-11
Applicant: ASML Netherlands B.V.
Inventor： Thomas Jarik Huisman , Sander Frederik Wuister , Hermanus Adrianus Dillen , Dorothea Maria Christina Oorschot
CPC classification number: G01N23/2251 , G03F1/84 , G03F7/7085 , G03F7/70608 , G06T7/0004 , G06T7/62 , G01N2223/07 , G01N2223/401 , G01N2223/507 , G06T2207/10061 , G06T2207/30148
Abstract: Apparatuses, systems, and methods for inspecting a semiconductor sample are disclosed. In some embodiments, the sample may comprise a structure having a plurality of openings in a top layer of the structure. In some embodiments, the method may comprise generating an image of the structure using a SEM; inspecting an opening of the plurality of openings by determining a dimension of the opening based on the image and determining an open-state of the opening, based on a contrast of the image; and determining a quality of the opening based on both the determined dimension and the determined open-state of the opening.
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215.发明公开公开(公告)号：US20230171869A1
公开(公告)日：2023-06-01
申请号：US17922056
申请日：2021-04-26
Applicant: ASML Netherlands B.V.
Inventor： Benjamin Andrew Sams , Dietmar Uwe Herbert Trees , Theodorus Wilhelmus Driessen , Herman Harry Borggreve , Brandon Michael Johnson , Vikas Giridhar Telkar
CPC classification number: H05G2/006 , B05B1/02 , G03F7/70033 , H05G2/008
Abstract: A droplet generator nozzle (800, 820/830) includes a metal body (802, 822), a metal fitting (812, 823/833) arranged adjacent to the metal body, and a capillary (804, 824/834) comprising a first end and a second end. The first end of the capillary is disposed within the metal fitting, and the capillary is configured to eject initial droplets of a material from the second end of the capillary. The droplet generator nozzle further includes an electromechanical element (808 828/838) disposed within the metal body and coupled to the first end of the capillary and a fastener element (810) configured to clamp around a portion of the metal body and around the metal fitting. The electromechanical element is configured to apply a change that affects droplet generation from the capillary. The second end of the capillary protrudes out from an opening in the fastener element of the droplet generator nozzle. Droplet generator nozzle 830 of FIG. 8C represents the embodiment shown in FIG. 8B, in a cross section orthogonal to the cross section shown in FIG. 8B.
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Patent Agency Ranking
公开(公告)号：US11662669B2
公开(公告)日：2023-05-30
申请号：US17625466
申请日：2020-06-15
Applicant: ASML Netherlands B.V.
Inventor： Andrey Valerievich Rogachevskiy , Martin Jules Marie-Emile De Nivelle , Arjan Gijsbertsen , Willem Richard Pongers , Viktor Trogrlic
CPC classification number: G03F9/7092 , G03F7/7085 , G03F9/7026 , G03F9/7034
Abstract: An apparatus for measuring a height of a substrate for processing in a lithographic apparatus is disclosed. The apparatus comprises a first sensor for sensing a height of the substrate over a first area. The apparatus also comprises a second sensor for sensing a height of the substrate over a second area. The apparatus further comprises a processor adapted to normalize first data corresponding to a signal from the first sensor with a second sensor footprint to produce a first normalized height data, and to normalize second data corresponding to a signal from the second sensor with a first sensor footprint to produce a second normalized height data. The processor is adapted to determine a correction to a measured height of the substrate based on a difference between the first and second normalized height data.
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公开(公告)号：US11662666B2
公开(公告)日：2023-05-30
申请号：US17441353
申请日：2020-03-05
Applicant: ASML NETHERLANDS B.V.
Inventor： Rowin Meijerink , Putra Saputra , Pieter Gerardus Jacobus Smorenberg , Theo Wilhelmus Maria Thijssen , Khalid Elbattay , Ma Su Su Hlaing , Paul Derwin , Bo Zhong , Masaya Komatsu
IPC: G03F7/20
CPC classification number: G03F7/70633 , G03F7/70258 , G03F7/70725
Abstract: A method for controlling a lithographic apparatus configured to pattern an exposure field on a substrate including at least a sub-field, the method including: obtaining an initial spatial profile associated with a spatial variation of a performance parameter associated with a layer on the substrate across at least the sub-field of the exposure field; and decomposing the initial spatial profile into at least a first component spatial profile for controlling a lithographic apparatus at a first spatial scale and a second component spatial profile for controlling the lithographic apparatus at a second spatial scale associated with a size of the sub-field, wherein the decomposing includes co-optimizing the first and second component spatial profiles based on correcting the spatial variation of the performance parameter across the sub-field.
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218.发明公开公开(公告)号：US20230164900A1
公开(公告)日：2023-05-25
申请号：US18011593
申请日：2021-06-21
Applicant: ASML Netherlands B.V.
Inventor： Alexander Igorevich Ershov , Chirag Rajyaguru , Dietmar Uwe Herbert Trees , Joshua Mark Lukens , Theodorus Wilhelmus Driessen , Robert Jay Rafac , Georgiy Olegovich Vaschenko
IPC: H05G2/00
CPC classification number: H05G2/006 , H05G2/008 , G03F7/70033
Abstract: Apparatus for and method of accelerating droplets used to generate EUV radiation that comprise an arrangement producing a laser beam directed to an irradiation region and a droplet source. The droplet source includes a fluid exiting a nozzle in a stream that breaks up into droplets that then undergo coalescence. The droplets are then subjected to a stream of gas that entrains and accelerates the droplets.
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219.发明公开公开(公告)号：US20230162944A1
公开(公告)日：2023-05-25
申请号：US17916785
申请日：2021-03-31
Applicant: ASML Netherlands B.V.
Inventor： Xiang WANG , Steffen MEYER , Mark O'MAHONY
CPC classification number: H01J37/222 , H01J37/28 , H01J2237/2817 , H01J2237/2809 , H01J2237/0044 , H01J2237/282
Abstract: An improved method and apparatus for enhancing an inspection image in a charged-particle beam inspection system. An improved method for enhancing an inspection image comprises acquiring a plurality of test images of a sample that are obtained at different landing energies, determining distortion levels for the plurality of test images, determining a landing energy level that enables the sample to be in a neutral charge condition during inspection based on the distortion levels, and acquiring an inspection image based on the determined landing energy level.
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公开(公告)号：US20230161265A1
公开(公告)日：2023-05-25
申请号：US18157776
申请日：2023-01-20
Applicant: ASML Netherlands B.V.
Inventor： Pioter NIKOLSKI , Thomas THEEUWES , Antonio CORRADI , Duan-Fu Stephen HSU , Sun Wook JUNG
IPC: G03F7/20
CPC classification number: G03F7/70525 , G03F7/70616 , G03F7/70441
Abstract: Disclosed is a method of determining a process window within a process space comprising obtaining contour data relating to features to be provided to a substrate across a plurality of layers, for each of a plurality of process conditions associated with providing the features across said plurality of layers and failure mode data describing constraints on the contour data across the plurality of layers. The failure mode data is applied to the contour data to determine a failure count for each process condition; and the process window is determined by associating each process condition to its corresponding failure count. Also disclosed is a method of determining an actuation constrained subspace of the process window based on actuation constraints imposed by the plurality of actuators.
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