公开(公告)号：US20140247565A1

公开(公告)日：2014-09-04

申请号：US14183970

申请日：2014-02-19

Applicant: SEIKO EPSON CORPORATION

Inventor： Tomonaga Kobayashi

IPC: H05K1/18 ,  H05K1/03

CPC classification number: H05K3/00 ,  B81B2201/025 ,  B81C1/0023 ,  G01C19/5733 ,  G01P1/023 ,  G01P15/125 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49171 ,  H01L2224/73265 ,  H05K1/00 ,  H01L2924/00014

Abstract: A module includes an insulating substrate that is a first base material; a cover member having a cavity section and a second recess section that form an internal space between the cover member and the insulating substrate, which is a second base material bonded to the insulating substrate on a first surface thereof; an element piece that is a first functional element, accommodated in the internal space; a recess section formed on a second surface that is a rear surface of the first surface of the cover member; and a semiconductor device that is a second functional element, connected in the recess section.

Abstract translation: 模块包括作为第一基材的绝缘基板; 盖构件，具有空腔部和第二凹部，所述第二凹部在所述盖构件和所述绝缘基板之间形成内部空间，所述绝缘基板是在其第一表面上接合到所述绝缘基板的第二基材; 作为第一功能元件的元件，容纳在内部空间中; 形成在所述盖构件的所述第一表面的后表面的第二表面上的凹部; 以及连接在所述凹部中的作为第二功能元件的半导体装置。

公开(公告)号：US20140238131A1

公开(公告)日：2014-08-28

申请号：US14347867

申请日：2012-09-28

Applicant: PANASONIC CORPORATION

Inventor： Shigehiro Yoshiuchi ,  Satoshi Ohuchi ,  Tsuyoshi Fujii ,  Kensaku Yamamoto ,  Hideo Ohkoshi

IPC: G01P15/08

CPC classification number: G01C19/5769 ,  B81B7/0048 ,  B81B2201/0242 ,  B81B2201/025 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2207/07 ,  G01P15/0802 ,  H01L24/32 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: An inertial force sensor that can suppress fluctuation of detection sensitivity even if an external stress is applied to the inertial force sensor. Angular velocity sensor (1), that is, an inertial force sensor includes ceramic substrate (6), lower lid (4) adhering to ceramic substrate (6) with adhesives (11a and 11b) (first adhesives), and sensor element (2) adhering to lower lid (4) with adhesives (10a and 10b) (second adhesives). The elastic moduli of adhesives (11a and 11b) are smaller than those of adhesives (10a and 10b).

Abstract translation: 即使向惯性力传感器施加外部应力也能够抑制检测灵敏度的波动的惯性力传感器。 角速度传感器（1）即惯性力传感器包括陶瓷基板（6），粘合剂（11a和11b）（第一粘合剂）和传感器元件（2）附着在陶瓷基板（6）上的下盖 ）用粘合剂（10a和10b）（第二粘合剂）粘附到下盖（4）上。 粘合剂（11a和11b）的弹性模量小于粘合剂（10a和10b）的弹性模量。

公开(公告)号：US08748206B2

公开(公告)日：2014-06-10

申请号：US13295273

申请日：2011-11-14

Applicant: Robert D. Horning

Inventor： Robert D. Horning

IPC: H01L21/00

CPC classification number: B81B7/02 ,  B81B7/0041 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/025 ,  B81B2207/095 ,  B81B2207/096 ,  B81C2201/019 ,  H01L2224/48091 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Systems and methods for a micro-electromechanical system (MEMS) apparatus are provided. In one embodiment, a system comprises a first double chip that includes a first base layer; a first device layer bonded to the first base layer, the first device layer comprising a first set of MEMS devices; and a first top layer bonded to the first device layer, wherein the first set of MEMS devices is hermetically isolated. The system also comprises a second double chip that includes a second base layer; a second device layer bonded to the second base layer, the second device layer comprising a second set of MEMS devices; and a second top layer bonded to the second device layer, wherein the second set of MEMS devices is hermetically isolated, wherein a first top surface of the first top layer is bonded to a second top surface of the second top layer.

Abstract translation: 提供了一种用于微机电系统（MEMS）装置的系统和方法。 在一个实施例中，系统包括第一双芯片，其包括第一基层; 结合到第一基底层的第一器件层，第一器件层包括第一组MEMS器件; 以及结合到第一器件层的第一顶层，其中第一组MEMS器件被气密隔离。 该系统还包括第二双芯片，其包括第二基层; 结合到第二基层的第二器件层，第二器件层包括第二组MEMS器件; 以及结合到所述第二器件层的第二顶层，其中所述第二组MEMS器件是气密隔离的，其中所述第一顶层的第一顶表面接合到所述第二顶层的第二顶表面。

公开(公告)号：US08691099B2

公开(公告)日：2014-04-08

申请号：US12930840

申请日：2011-01-18

Applicant: John Gritters ,  Ezekiel John Joseph Kruglick ,  Mathew Last

Inventor： John Gritters ,  Ezekiel John Joseph Kruglick ,  Mathew Last

IPC: C23F1/00

CPC classification number: G02B26/0841 ,  B81B2201/025 ,  B81B2201/042 ,  B81B2203/0136 ,  B81B2203/058 ,  B81C1/00182 ,  G02B26/101 ,  H02N1/006

Abstract: A process for fabricating a MEMS device with movable comb teeth and stationary comb teeth. A single mask is used to define, during a series of processing steps, the location and width of both movable comb teeth and stationary comb teeth so as to assure self alignment of the comb teeth. MEMS devices are fabricated from a single multi-layer semi-conductor structure of semiconductor material and insulator material. In a preferred embodiment the process is employed to provide a MEMS mirror device having a movable structure, a movable frame, a first set of two torsional members, a first set of at least four comb drives, an outer fixed frame structure, a second set of two torsional members, and a second set of at least four comb drives.

Abstract translation: 一种用于制造具有可移动梳齿和固定梳齿的MEMS装置的方法。 在一系列处理步骤中，使用单个掩模来限定可移动梳齿和固定梳齿的位置和宽度，以确保梳齿的自对准。 MEMS器件由半导体材料和绝缘体材料的单个多层半导体结构制成。 在优选实施例中，该方法用于提供具有可移动结构的MEMS反射镜装置，可移动框架，第一组两个扭转构件，第一组至少四个梳状驱动器，外部固定框架结构，第二组 的两个扭转构件，以及第二组至少四个梳齿驱动器。

公开(公告)号：US20140020466A1

公开(公告)日：2014-01-23

申请号：US14027783

申请日：2013-09-16

Applicant: Panasonic Corporation

Inventor： Hideo Ohkoshi ,  Tomohiro Mitani

IPC: G01P1/00

CPC classification number: G01P1/003 ,  B81B7/0058 ,  B81B2201/025 ,  B81C1/0023 ,  G01C19/5607 ,  G01P1/023 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: An inertial sensor includes oscillating-type angular velocity sensing element (32), IC (34) for processing signals supplied from angular velocity sensing element (32), capacitor (36) for processing signals, and package (38) for accommodating angular velocity sensing element (32), IC (34), capacitor (36). Element (32) and IC (34) are housed in package (38) via a vibration isolator, which is formed of TAB tape (46), plate (40) on which IC (34) is placed, where angular velocity sensing element (32) is layered on IC (34), and outer frame (44) placed outside and separately from plate (40) and yet coupled to plate (40) via wiring pattern (42).

Abstract translation: 惯性传感器包括用于处理从角速度感测元件（32）提供的信号的振荡型角速度感测元件（32），用于处理信号的电容器（36）的IC（34），以及用于容纳角速度感测 元件（32），IC（34），电容器（36）。 元件（32）和IC（34）经由隔离器（36）容纳在封装（38）中，隔离器由TAB带（46），放置IC（34）的板（40）形成，其中角速度感测元件 32）层叠在IC（34）上，外框架（44）位于板（40）之外并与板（40）分开并且经由布线图案（42）耦合到板（40）。

公开(公告)号：US20130307095A1

公开(公告)日：2013-11-21

申请号：US13957875

申请日：2013-08-02

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Bruce C.S. Chou

IPC: B81B7/00

CPC classification number: B81B7/0032 ,  B81B2201/025 ,  B81C1/00246 ,  B81C2203/0109 ,  B81C2203/0714 ,  H01L2224/83805

Abstract: A composite wafer semiconductor device includes a first wafer and a second wafer. The first wafer has a first side and a second side, and the second side is substantially opposite the first side. The composite wafer semiconductor device also includes an isolation set is formed on the first side of the first wafer and a free space is etched in the isolation set. The second wafer is bonded to the isolation set. A floating structure, such as an inertia sensing device, is formed in the second wafer over the free space. In an embodiment, a surface mount pad is formed on the second side of the first wafer. Then, the floating structure is electrically coupled to the surface mount pad using a through silicon via (TSV) conductor.

Abstract translation: 复合晶片半导体器件包括第一晶片和第二晶片。 第一晶片具有第一侧和第二侧，第二侧基本上与第一侧相对。 复合晶片半导体器件还包括在第一晶片的第一侧上形成隔离组件，并且在隔离组件中蚀刻自由空间。 第二个晶片结合到隔离组件上。 在自由空间中的第二晶片中形成诸如惯性感测装置的浮动结构。 在一个实施例中，表面安装焊盘形成在第一晶片的第二侧上。 然后，使用硅通孔（TSV）导体将浮动结构电耦合到表面安装焊盘。

公开(公告)号：US20130299925A1

公开(公告)日：2013-11-14

申请号：US13890752

申请日：2013-05-09

Applicant: Johannes CLASSEN ,  Mirko HATTASS ,  Daniel Christoph MEISEL

Inventor： Johannes CLASSEN ,  Mirko HATTASS ,  Daniel Christoph MEISEL

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81C1/00134 ,  B81B3/0018 ,  B81B2201/025 ,  B81C1/00246 ,  B81C1/00333 ,  G01P15/0802

Abstract: A micromechanical inertial sensor includes an ASIC element having a processed front side, an MEMS element having a micromechanical sensor structure, and a cap wafer mounted above the micromechanical sensor structure, which sensor structure includes a seismic mass and extends over the entire thickness of the MEMS substrate. The MEMS element is mounted on the processed front side of the ASIC element above a standoff structure and is electrically connected to the ASIC element via through-contacts in the MEMS substrate and in adjacent supports of the standoff structure. A blind hole is formed in the MEMS substrate in the area of the seismic mass, which blind hole is filled with the same electrically conductive material as the through-contacts, the conductive material having a greater density than the MEMS substrate.

Abstract translation: 微机械惯性传感器包括具有经处理的前侧的ASIC元件，具有微机械传感器结构的MEMS元件和安装在微机械传感器结构上方的盖晶片，该传感器结构包括地震块并在MEMS的整个厚度上延伸 基质。 MEMS元件安装在ASIC元件的经处理的前侧，位于支架结构之上，并通过MEMS基板中的通孔和隔离结构的相邻支撑件电连接到ASIC元件。 在地震质量区域中的MEMS衬底中形成盲孔，该盲孔填充有与穿透接触件相同的导电材料，导电材料具有比MEMS衬底更大的密度。

公开(公告)号：US08507358B2

公开(公告)日：2013-08-13

申请号：US12870444

申请日：2010-08-27

Applicant: Bruce C. S. Chou

Inventor： Bruce C. S. Chou

IPC: H01L21/76 ,  H01L21/30 ,  H01L21/46 ,  H01L21/44 ,  H01L21/70

CPC classification number: B81B7/0032 ,  B81B2201/025 ,  B81C1/00246 ,  B81C2203/0109 ,  B81C2203/0714 ,  H01L2224/83805

Abstract: A composite wafer semiconductor device includes a first wafer and a second wafer. The first wafer has a first side and a second side, and the second side is substantially opposite the first side. The composite wafer semiconductor device also includes an isolation set is formed on the first side of the first wafer and a free space is etched in the isolation set. The second wafer is bonded to the isolation set. A floating structure, such as an inertia sensing device, is formed in the second wafer over the free space. In an embodiment, a surface mount pad is formed on the second side of the first wafer. Then, the floating structure is electrically coupled to the surface mount pad using a through silicon via (TSV) conductor.

Abstract translation: 复合晶片半导体器件包括第一晶片和第二晶片。 第一晶片具有第一侧和第二侧，第二侧基本上与第一侧相对。 复合晶片半导体器件还包括在第一晶片的第一侧上形成隔离组件，并且在隔离组件中蚀刻自由空间。 第二个晶片结合到隔离组件上。 在自由空间中的第二晶片中形成诸如惯性感测装置的浮动结构。 在一个实施例中，表面安装焊盘形成在第一晶片的第二侧上。 然后，使用硅通孔（TSV）导体将浮动结构电耦合到表面安装焊盘。

公开(公告)号：US20130186201A1

公开(公告)日：2013-07-25

申请号：US13451154

申请日：2012-04-19

Applicant: Sheng-Ta Lee ,  Chuan Wei Wang

Inventor： Sheng-Ta Lee ,  Chuan Wei Wang

IPC: G01P15/125

CPC classification number: G01P15/125 ,  B81B2201/025 ,  B81C1/00246 ,  B81C2203/0714 ,  G01P15/08 ,  G01P15/0802

Abstract: The present invention discloses a micro-electro-mechanical system (MEMS) device, comprising: a mass including a main body and two capacitor plates located at the two sides of the main body and connected with the main body, the two capacitor plates being at different elevation levels; an upper electrode located above one of the two capacitor plates, forming one capacitor therewith; and a lower electrode located below the other of the two capacitor plates, forming another capacitor therewith, wherein the upper and lower electrodes are misaligned with each other in a horizontal direction.

Abstract translation: 本发明公开了一种微电子机械系统（MEMS）装置，其特征在于，包括：主体和两个位于主体两侧并与主体连接的电容器板的质量体，两个电容器板位于 不同高程水平; 位于两个电容器板之一上方的上电极，与其形成一个电容器; 以及位于两个电容器板的另一个下方的下电极，与其形成另一个电容器，其中上电极和下电极在水平方向上彼此不对准。

公开(公告)号：US08487387B2

公开(公告)日：2013-07-16

申请号：US13526279

申请日：2012-06-18

Applicant: Yizhen Lin ,  Woo Tae Park ,  Mark E. Schlarmann ,  Hemant D. Desai

Inventor： Yizhen Lin ,  Woo Tae Park ,  Mark E. Schlarmann ,  Hemant D. Desai

IPC: H01L29/82

CPC classification number: H01L28/60 ,  B81B7/02 ,  B81B2201/025 ,  B81B2201/0264 ,  G01L9/0073 ,  G01L19/0092 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/088 ,  H01G5/18

Abstract: A device (20, 90) includes sensors (28, 30) that sense different physical stimuli. A pressure sensor (28) includes a reference element (44) and a sense element (52), and an inertial sensor (30) includes a movable element (54). Fabrication (110) entails forming (112) a first substrate structure (22, 92) having a cavity (36, 100), forming a second substrate structure (24) to include the sensors (28, 30), and coupling (128) the substrate structures so that the first sensor (28) is aligned with the cavity (36, 100) and the second sensor (30) is laterally spaced apart from the first sensor (28). Forming the second structure (24) includes forming (118) the sense element (52) from a material layer (124) of the second structure (24) and following coupling (128) of the substrate structures, concurrently forming (132) the reference element (44) and the movable element (54) in a wafer substrate (122) of the second structure (24).

Abstract translation: 装置（20,90）包括感测不同物理刺激的传感器（28,30）。 压力传感器（28）包括参考元件（44）和感测元件（52），惯性传感器（30）包括可移动元件（54）。 制造（110）需要形成（112）具有空腔（36,100）的第一衬底结构（22,92），形成包括传感器（28,30）的第二衬底结构（24）和耦合（128） 所述基板结构使得所述第一传感器（28）与所述空腔（36,100）对准，并且所述第二传感器（30）与所述第一传感器（28）横向间隔开。 形成第二结构（24）包括从第二结构（24）的材料层（124）和衬底结构的耦合（128）形成（118）感测元件（52），同时形成（132）参考 元件（44）和第二结构（24）的晶片衬底（122）中的可移动元件（54）。