公开(公告)号：US06908793B2

公开(公告)日：2005-06-21

申请号：US10416558

申请日：2001-11-13

Applicant: Mark N. Martin

Inventor： Mark N. Martin

IPC: B32B5/14 ,  B81B3/00 ,  H01L21/3213 ,  H01L21/44 ,  H01L29/84

CPC classification number: B81C1/00476 ,  B81B2201/0235 ,  B81B2201/0257 ,  B81C2201/0132 ,  B81C2203/0136 ,  H01L21/32135 ,  H01L29/84 ,  Y10T428/24996

Abstract: A process for fabricating a semiconductor device having, for example, a MISFET transistor, is provided which comprises the steps of (a) providing a partially fabricated semiconductor device comprising a substrate and a first and second polysilican layer insulatively spaced from the substrate by an insulating layer, the insulating layer having an opening therein which exposes the surface of the first polysilicon layer positioned below the second polysilicon layer and (b) exposing the partially fabricated semiconductor device to a noble gas halide to substantially remove the first polysilicon layer.

Abstract translation: 提供一种用于制造具有例如MISFET晶体管的半导体器件的工艺，其包括以下步骤：（a）提供部分制造的半导体器件，其包括衬底和通过绝缘体与衬底绝缘间隔开的第一和第二聚硅酸盐层 层，其中具有开口的绝缘层暴露位于第二多晶硅层下方的第一多晶硅层的表面，和（b）将部分制造的半导体器件暴露于惰性气体卤化物以基本上去除第一多晶硅层。

公开(公告)号：US20050059253A1

公开(公告)日：2005-03-17

申请号：US10665998

申请日：2003-09-17

Applicant: Gregory Schaadt ,  Hongqin Shi

Inventor： Gregory Schaadt ,  Hongqin Shi

IPC: B01D20060101 ,  C23F1/00 ,  G01R31/00 ,  H01L21/00 ,  H01L21/302 ,  H01L21/461

CPC classification number: B81C1/00595 ,  B81C2201/0132

Abstract: The present invention teaches a method and apparatus for removing sacrificial materials in fabrications of microstructures using one or more selected spontaneous vapor phase etchants. The selected etchant is fed into an etch chamber containing the microstructure during each feeding cycle of a sequence of feeding cycles until the sacrificial material of the microstructure is exhausted through the chemical reaction between the etchant and the sacrificial material. Specifically, during a first feeding cycle, a first amount of selected spontaneous vapor phase etchant is fed into the etch chamber. At a second feeding cycle, a second amount of the etchant is fed into the etch chamber. The first amount and the second amount of the selected etchant may or may not be the same. The time duration of the feeding cycles are individually adjustable.

公开(公告)号：US20040245217A1

公开(公告)日：2004-12-09

申请号：US10891916

申请日：2004-07-15

Inventor： James A. Hunter

IPC: C23F001/00

CPC classification number: G02B26/0833 ,  B81B2201/045 ,  B81C1/00531 ,  B81C2201/0132 ,  G02B26/0841

Abstract: In one embodiment, a micro device is formed by depositing a sacrificial layer over a metallic electrode, forming a moveable structure over the sacrificial layer, and then etching the sacrificial layer with a noble gas fluoride. Because the metallic electrode is comprised of a metallic material that also serves as an etch stop in the sacrificial layer etch, charge does not appreciably build up in the metallic electrode. This helps stabilize the driving characteristic of the moveable structure. In one embodiment, the moveable structure is a ribbon in a light modulator.

Abstract translation: 在一个实施例中，通过在金属电极上沉积牺牲层来形成微器件，在牺牲层上形成可移动结构，然后用惰性气体氟化物蚀刻牺牲层。 因为金属电极由在牺牲层蚀刻中也用作蚀刻停止层的金属材料组成，所以电荷在金属电极中不会明显地积聚。 这有助于稳定可移动结构的驱动特性。 在一个实施例中，可移动结构是光调制器中的带状物。

公开(公告)号：US06800210B2

公开(公告)日：2004-10-05

申请号：US10154150

申请日：2002-05-22

Applicant: Satyadev R. Patel ,  Andrew G. Huibers ,  Gregory P. Schaadt ,  Peter J. Heureux

Inventor： Satyadev R. Patel ,  Andrew G. Huibers ,  Gregory P. Schaadt ,  Peter J. Heureux

IPC: H01L21306

CPC classification number: B81C1/00476 ,  B81C1/00547 ,  B81C2201/0109 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/112 ,  B82Y30/00

Abstract: An etching method, such as for forming a micromechanical device, is disclosed. One embodiment of the method is for releasing a micromechanical structure, comprising, providing a substrate; providing a sacrificial layer directly or indirectly on the substrate; providing one or more micromechanical structural layers on the sacrificial layer; performing a first etch to remove a portion of the sacrificial layer, the first etch comprising providing an etchant gas and energizing the etchant gas so as to allow the etchant gas to physically, or chemically and physically, remove the portion of the sacrificial layer; performing a second etch to remove additional sacrificial material in the sacrificial layer, the second etch comprising providing a gas that chemically but not physically etches the additional sacrificial material. Another embodiment of the method is for etching a silicon material on or within a substrate, comprising: performing a first etch to remove a portion of the silicon, the first etch comprising providing an etchant gas and energizing the etchant gas so as to allow the etchant gas to physically, or chemically and physically, remove the portion of silicon; performing a second etch to remove additional silicon, the second etch comprising providing an etchant gas that chemically but not physically etches the additional silicon.

Abstract translation: 公开了一种诸如用于形成微机械装置的蚀刻方法。 该方法的一个实施例是用于释放微机械结构，包括：提供衬底; 在衬底上直接或间接提供牺牲层; 在所述牺牲层上提供一个或多个微机械结构层; 执行第一蚀刻以去除牺牲层的一部分，所述第一蚀刻包括提供蚀刻剂气体并激发蚀刻剂气体，以允许蚀刻剂气体在物理或化学和物理上移除牺牲层的该部分; 执行第二蚀刻以去除牺牲层中的附加牺牲材料，第二蚀刻包括提供化学上但不物理蚀刻附加牺牲材料的气体。 该方法的另一实施例是用于在衬底上或衬底内蚀刻硅材料，包括：执行第一蚀刻以去除硅的一部分，第一蚀刻包括提供蚀刻剂气体并激发蚀刻剂气体以允许蚀刻剂 物理或化学和物理的气体去除硅的部分; 执行第二蚀刻以去除附加的硅，第二蚀刻包括提供蚀刻剂气体，其化学地但不物理地蚀刻附加的硅。

公开(公告)号：US06794296B1

公开(公告)日：2004-09-21

申请号：US09786966

申请日：2001-04-10

Applicant: Rainer Kassing ,  Christophe Mihalcea ,  Egbert Oesterschulze

Inventor： Rainer Kassing ,  Christophe Mihalcea ,  Egbert Oesterschulze

IPC: H01L21302

CPC classification number: B81C1/00087 ,  B81B2201/047 ,  B81B2203/0361 ,  B81C2201/0132 ,  G01Q60/06 ,  G01Q60/22 ,  G01Q60/38 ,  G02B27/58 ,  H01J9/02 ,  H01J37/09

Abstract: The invention relates to a method for producing an aperture (10) in a semiconductor material (12) comprising the following steps: Preparing a semiconductor wafer (14), for example, a (100)-oriented silicon wafer having an upper surface (16) and a lower surface (18); producing a cavity (20) with a side wall (22) in the upper surface (16) of the semiconductor wafer (14) by partially etching said upper surface (16), whereby the cavity (20) comprises a closed bottom area (24) which faces the lower surface (18) and which preferably has, in particular, a convex or, in particular, a concave corner or edge or a curvature of this type. After depositing an oxide layer (26) on the semiconductor material (12) at least in the area of the cavity (20) by oxidizing the semiconductor material (12), whereby the oxide layer (26) preferably comprises an inhomogeneity (28) in the bottom area (24), the semiconductor material (14) is selectively etched back on the lower surface (18) of the semiconductor wafer (14) until at least the oxide layer (26) located in the bottom area (24) is exposed. Afterwards, the exposed oxide layer (26) is etched until it is at least severed. In addition, the invention relates to an aperture (10) in a semiconductor material (12) especially produced according to the inventive method, and to different uses of such an aperture (10).

Abstract translation: 本发明涉及一种用于在半导体材料（12）中制造孔（10）的方法，包括以下步骤：准备半导体晶片（14），例如具有上表面（16）的（100）取向的硅晶片 ）和下表面（18）; 通过部分地蚀刻所述上表面（16），在半导体晶片（14）的上表面（16）中产生具有侧壁（22）的空腔（20），由此空腔（20）包括封闭的底部区域 ），其特别优选地具有凸形或特别是这种类型的凹角或边缘或曲率。 在通过氧化半导体材料（12）至少在空腔（20）的区域中在半导体材料（12）上沉积氧化物层（26）之后，氧化物层（26）优选地包含不均匀性（28） 底部区域（24），半导体材料（14）被选择性地回蚀在半导体晶片（14）的下表面（18）上，直到至少位于底部区域（24）中的氧化物层（26）被暴露 。 之后，暴露的氧化物层（26）被蚀刻直至至少被切断。 另外，本发明涉及一种特别根据本发明方法制造的半导体材料（12）中的孔（10）以及这种孔（10）的不同用途。

公开(公告)号：US20040110318A1

公开(公告)日：2004-06-10

申请号：US10725874

申请日：2003-12-02

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Takahiro Oguchi

IPC: H01L021/00

CPC classification number: G01C19/5719 ,  B81B2201/025 ,  B81C1/00579 ,  B81C1/00587 ,  B81C2201/0132 ,  B81C2201/014 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  Y10S148/012 ,  Y10S148/135 ,  Y10S148/159

Abstract: A method of manufacturing an external force detection sensor in which a sensor element is formed by through-hole dry etching of an element substrate, and an electrically conductive material is used as an etching stop layer during the dry etching.

Abstract translation: 通过干式蚀刻中的蚀刻停止层，使用通过元件基板的贯通孔干蚀刻形成传感器元件的外力检测传感器的制造方法。

公开(公告)号：US06736982B2

公开(公告)日：2004-05-18

申请号：US09882569

申请日：2001-06-15

Applicant: Xiang Zheng Tu

Inventor： Xiang Zheng Tu

IPC: B81B300

CPC classification number: G01P15/0802 ,  B81B3/007 ,  B81B2201/0242 ,  B81B2203/0136 ,  B81B2203/0307 ,  B81C1/00182 ,  B81C2201/0132 ,  G01C19/5719

Abstract: A micromachined vertical vibrating gyroscope consists of three single crystal silicon assemblies: an outer single crystal silicon assembly, an intermediate single crystal silicon assembly, and an inner single crystal silicon assembly. The outer assembly includes a plurality of arc-shaped anchors arranged in a circle and extending from a single crystal silicon substrate coated with an insulating annulus thereon. The intermediate assembly is a suspended wheel concentric with the arc-shaped anchors. The inner assembly is a suspended hub concentric with the circle formed by the anchors and having no axle at its center. The three assemblies are connected to each other through several flexures. The intermediate suspended wheel is driven into rotational vibration by lateral comb capacitors. Input angular rates are measured by two vertical capacitors. The gyroscope is fabricated utilizing a bipolar-compatible process comprising steps of buried layer diffusion, selective epitaxial growth and lateral overgrowth, deep reactive ion etching, and porous silicon processing.

Abstract translation: 微机械垂直振动陀螺仪由三个单晶硅组件组成：外单晶硅组件，中间单晶硅组件和内单晶硅组件。 外部组件包括多个弧形锚固件，其布置成圆形并从其上涂覆有绝缘环的单晶硅衬底延伸。 中间组件是与弧形锚固件同心的悬挂车轮。 内部组件是与由锚固件形成的圆同心的悬挂的毂，并且在其中心没有轴。 三个组件通过几个弯曲部彼此连接。 中间悬挂轮由横向梳状电容器驱动旋转振动。 输入角速率由两个垂直电容器测量。 使用双相兼容工艺制造陀螺仪，其包括埋层扩散，选择性外延生长和横向过度生长，深反应离子蚀刻和多孔硅处理的步骤。

公开(公告)号：US20040074301A1

公开(公告)日：2004-04-22

申请号：US10472465

申请日：2003-11-24

Inventor： Heikki Kuisma ,  Juha Lahdenpera

IPC: G01P015/02 ,  H01L021/306

CPC classification number: B81C1/00182 ,  B81B2201/0235 ,  B81C2201/0132 ,  B81C2201/0133 ,  G01P15/0802 ,  G01P2015/0817

Abstract: The invention relates to a method for manufacturing a silicon sensor structure and a silicon sensor. According to the method, into a single-crystal silicon wafer (10) is formed by etched opening at least one spring element configuration (7) and at least one seismic mass (8) connected to said spring element configuration (7). According to the invention, the openings and trenches (8) extending through the depth of the silicon wafer are fabricated by dry etch methods, and the etch process used for controlling the spring constant of the spring element configuration (7) is based on wet etch methods.

Abstract translation: 本发明涉及一种硅传感器结构和硅传感器的制造方法。 根据该方法，通过蚀刻开口形成单晶硅晶片（10），至少一个弹簧元件构造（7）和连接到所述弹簧元件构型（7）的至少一个地震块（8）。 根据本发明，通过干蚀刻方法制造延伸穿过硅晶片深度的开口和沟槽（8），并且用于控制弹簧元件构型（7）的弹簧常数的蚀刻工艺基于湿蚀刻 方法。

公开(公告)号：US06689694B1

公开(公告)日：2004-02-10

申请号：US09715446

申请日：2000-11-17

Applicant: Dong-Il Cho ,  Sangwoo Lee ,  Sangjun Park

Inventor： Dong-Il Cho ,  Sangwoo Lee ,  Sangjun Park

IPC: H01L21311

CPC classification number: C30B29/06 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81C1/00801 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/014 ,  C30B33/00

Abstract: Disclosed is a micromechanical system fabrication method using (111) single crystalline silicon as a silicon substrate and employing a reactive ion etching process in order to pattern a microstructure that will be separated from the silicon substrate and a selective release-etching process utilizing an aqueous alkaline solution in order to separate the microstructure from the silicon substrate. According to the micromechanical system fabrication method of the present invention, the side surfaces of microstructures can be formed to be vertical by employing the RIE technique. Furthermore, the microstructures can be readily separated from the silicon substrate by employing the selective release-etching technique using slow etching {111} planes as the etch stop in an aqueous alkaline solution. In addition, etched depths can be adjusted during the RIE step, thereby adjusting the thickness of the microstructure and the spacing between the microstructure and the silicon substrate.

Abstract translation: 公开了一种使用（111）单晶硅作为硅衬底并采用反应离子蚀刻工艺以便将从硅衬底分离的微结构图案和利用碱性水溶液的选择性剥离蚀刻工艺的微机械系统制造方法 溶液以将微结构与硅衬底分离。 根据本发明的微机械系统制造方法，通过采用RIE技术，可以将微结构的侧面形成为垂直的。 此外，通过使用选择性剥离蚀刻技术，通过使用慢蚀刻{111}晶面作为碱性水溶液中的蚀刻停止，微结构可以容易地与硅衬底分离。 此外，可以在RIE步骤期间调整蚀刻深度，从而调整微结构的厚度和微结构与硅衬底之间的间隔。

公开(公告)号：US06660648B1

公开(公告)日：2003-12-09

申请号：US09678418

申请日：2000-10-02

Applicant: Paul Charles Galambos ,  Randy J. Shul ,  Christi Gober Willison

Inventor： Paul Charles Galambos ,  Randy J. Shul ,  Christi Gober Willison

IPC: H01L21302

CPC classification number: B81C1/00158 ,  B81B2201/058 ,  B81B2201/10 ,  B81C2201/0115 ,  B81C2201/0132

Abstract: A new class of semipermeable membranes, and techniques for their fabrication, have been developed. These membranes, formed by appropriate etching of a deposited silicon nitride layer, are robust, easily manufacturable, and compatible with a wide range of silicon micromachining techniques.

Abstract translation: 已开发出一类新型半透膜及其制造技术。 通过适当蚀刻沉积的氮化硅层形成的这些膜是坚固的，易于制造的，并且与各种硅微加工技术相容。