公开(公告)号：US20080268575A1

公开(公告)日：2008-10-30

申请号：US11789578

申请日：2007-04-24

Applicant: Guillaume Bouche ,  Ralph N. Wall

Inventor： Guillaume Bouche ,  Ralph N. Wall

IPC: H01L21/78 ,  H01L21/302

CPC classification number: B81C1/0015 ,  B81B2201/014 ,  B81B2203/0384 ,  B81C1/00333 ,  B81C2201/0107 ,  B81C2201/0157 ,  B81C2203/0118

Abstract: In accordance with the present invention, accurate and easily controlled sloped walls may be formed using. AlN and preferably a heated TMAH for such purpose as the fabrication of MEMS devices, wafer level packaging and fabrication of fluidic devices. Various embodiments are disclosed.

Abstract translation: 根据本发明，可以使用精确且容易控制的倾斜壁来形成。 AlN，并且优选地是加热的TMAH，用于制造MEMS器件，晶片级封装和流体器件的制造。 公开了各种实施例。

公开(公告)号：US07411261B2

公开(公告)日：2008-08-12

申请号：US10773312

申请日：2004-02-09

Applicant: Eun-sung Lee ,  Chung-woo Kim ,  In-sang Song ,  Jong-seok Kim ,  Moon-chul Lee

Inventor： Eun-sung Lee ,  Chung-woo Kim ,  In-sang Song ,  Jong-seok Kim ,  Moon-chul Lee

IPC: H01L29/84

CPC classification number: B81B3/0078 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0307 ,  B81B2203/04 ,  B81C2201/0107 ,  B81C2201/014 ,  H01H59/0009

Abstract: A method for fabricating a MEMS device having a fixing part fixed to a substrate, a connecting part, a driving part, a driving electrode, and contact parts, includes patterning the driving electrode on the substrate; forming an insulation layer on the substrate; patterning the insulation layer and etching a fixing region and a contact region of the insulation layer; forming a metal layer over the substrate; planarizing the metal layer until the insulation layer is exposed; forming a sacrificial layer on the substrate; patterning the sacrificial layer to form an opening exposing a portion of the insulation layer and the metal layer in the fixing region; forming a MEMS structure layer on the sacrificial layer to partially fill the opening, thereby forming sidewalls therein; and selectively removing a portion of the sacrificial layer by etching so that a portion of the sacrificial layer remains in the fixing region.

Abstract translation: 一种用于制造具有固定到基板上的固定部件，连接部件，驱动部件，驱动电极和接触部件的MEMS器件的方法，包括在所述基板上图形化所述驱动电极; 在所述基板上形成绝缘层; 图案化绝缘层并蚀刻绝缘层的固定区域和接触区域; 在衬底上形成金属层; 平坦化金属层直到绝缘层露出; 在所述基板上形成牺牲层; 图案化牺牲层以形成露出固定区域中绝缘层和金属层的一部分的开口; 在所述牺牲层上形成MEMS结构层以部分地填充所述开口，从而在其中形成侧壁; 并且通过蚀刻选择性地去除牺牲层的一部分，使得牺牲层的一部分保留在固定区域中。

公开(公告)号：US07402907B2

公开(公告)日：2008-07-22

申请号：US11252882

申请日：2005-10-19

Applicant: Tatsuya Ohguro

Inventor： Tatsuya Ohguro

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: H01H59/0009 ,  B81B3/0021 ,  B81B2201/014 ,  H01G5/18 ,  H01L27/20 ,  H01L28/55 ,  H01L28/65 ,  H01L41/094 ,  H01L41/316 ,  H01L2224/48091 ,  H01L2924/13091 ,  H01L2924/19107 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A semiconductor device includes a semiconductor substrate, an actuator provided above the semiconductor substrate to move upwardly, a first electrode layer which is moved by the actuator, and a cap portion provided above the first electrode layer and including a second electrode layer.

Abstract translation: 半导体器件包括半导体衬底，设置在半导体衬底上方以向上移动的致动器，由致动器移动的第一电极层和设置在第一电极层上方并包括第二电极层的帽部。

公开(公告)号：US07358579B2

公开(公告)日：2008-04-15

申请号：US10185283

申请日：2002-06-28

Applicant: Qing Ma ,  Tsung-Kuan Allen Chou ,  Valluri Rao

Inventor： Qing Ma ,  Tsung-Kuan Allen Chou ,  Valluri Rao

IPC: H01L21/00 ,  H01L29/82

CPC classification number: H01H59/0009 ,  B81B3/007 ,  B81B2201/014 ,  B81B2201/0271 ,  B81B2203/0118 ,  B81B2203/0353 ,  B81B2203/04 ,  B81C2201/056 ,  H01H1/20 ,  H01H2001/0084 ,  H01H2059/0036 ,  H01H2059/0063

Abstract: A microelectromechanical system switch may include a relatively stiff cantilevered beam coupled, on its free end, to a more compliant or flexible extension. A contact may be positioned at the free end of the cantilevered beam. The extension reduces the actuation voltage that is needed and compensates for the relative stiffness of the cantilevered beam in closing the switch. In opening the switch, the stiffness of the cantilevered beam may advantageously enable quicker operation which may be desirable in higher frequency situations.

Abstract translation: 微机电系统开关可以包括在其自由端上耦合到更顺从或柔性延伸部的相对刚性的悬臂梁。 触点可以位于悬臂梁的自由端。 该延伸部分减小了所需的致动电压，并补偿了关闭开关时悬臂梁的相对刚度。 在打开开关时，悬臂梁的刚度可以有利地实现更快的操作，这在更高的频率情况下是可取的。

公开(公告)号：US20070230241A1

公开(公告)日：2007-10-04

申请号：US11239355

申请日：2005-09-30

Applicant: Marc Bockrath

Inventor： Marc Bockrath

IPC: G11C11/50

CPC classification number: B81B3/0021 ,  B81B2201/014 ,  B82Y10/00 ,  G11C13/025 ,  G11C23/00 ,  G11C2213/18 ,  Y10S977/732 ,  Y10S977/943

Abstract: A nanomechanical device includes a nanostructure, such as a MWNT, located between two electrodes. The device switches from an OFF state to an ON state by extension of at least one inner shell of the nanostructure relative to at least one outer shell of the nanostructure upon an application of a voltage between the electrodes. If desired, the device may also switch from the ON state to the OFF state upon an application of a gate voltage to a gate electrode located adjacent to the nanostructure.

Abstract translation: 纳米机械装置包括位于两个电极之间的纳米结构，例如MWNT。 通过在施加电极之间的电压的情况下，纳米结构的至少一个内壳相对于纳米结构的至少一个外壳延伸，从而将器件从OFF状态切换到ON状态。 如果需要，当将栅极电压施加到位于与纳米结构相邻的栅电极时，器件还可以从导通状态切换到断开状态。

公开(公告)号：US20070158775A1

公开(公告)日：2007-07-12

申请号：US11492671

申请日：2006-07-25

Applicant: Shawn Cunningham ,  Dana DeReus ,  Subham Sett ,  John Gilbert

Inventor： Shawn Cunningham ,  Dana DeReus ,  Subham Sett ,  John Gilbert

IPC: H01L31/058

CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

Abstract: Methods for Implementation of a Switching Function in a Microscale Device and for Fabrication of a Microscale Switch. According to one embodiment, a method is provided for implementing a switching function in a microscale device. The method can include providing a stationary electrode and a stationary contact formed on a substrate. Further, a movable microcomponent suspended above the substrate can be provided. A voltage can be applied between the between a movable electrode of the microcomponent and the stationary electrode to electrostatically couple the movable electrode with the stationary electrode, whereby the movable component is deflected toward the substrate and a movable contact moves into contact with the stationary contact to permit an electrical signal to pass through the movable and stationary contacts. A current can be applied through the first electrothermal component to produce heating for generating force for moving the microcomponent.

Abstract translation: 用于实现微尺度装置中的切换功能以及用于制造微型开关的方法。 根据一个实施例，提供了一种用于在微型设备中实现切换功能的方法。 该方法可以包括提供固定电极和形成在基板上的固定触点。 此外，可以提供悬浮在基板上方的可移动微型部件。 可以在微型组件的可动电极和固定电极之间施加电压，以使可动电极与固定电极静电耦合，由此可动部件朝向基板偏转，并且可动触点移动到与固定触点接触 允许电信号通过可移动和固定触点。 可以通过第一电热部件施加电流以产生用于产生用于移动微型部件的力的加热。

公开(公告)号：US07151425B2

公开(公告)日：2006-12-19

申请号：US11036039

申请日：2005-01-18

Applicant: Jae-Yeong Park ,  Hee-Chul Lee

Inventor： Jae-Yeong Park ,  Hee-Chul Lee

IPC: H01P1/10 ,  H01P5/12

CPC classification number: B81B7/007 ,  B81B2201/014 ,  B81C2203/0118 ,  H01G5/16 ,  H01G5/40 ,  H01H1/0036 ,  H01H2057/006 ,  H01P1/127 ,  Y10T29/42 ,  Y10T29/49105 ,  Y10T29/49117

Abstract: Disclosed are an RF MEMS switch and a fabrication method thereof. The RF MEMS switch is actuated with a low voltage and a low consumption power by using a piezoelectric capacitor actuated by being converted to mechanical energy from electric energy when an electric field is applied to the piezoelectric capacitor. A cap substrate is formed by using an etching method, a chemical mechanical polishing method, an electroplating method, etc., and the RF MEMS switch has a high reliability and a high yield.

Abstract translation: 公开了一种RF MEMS开关及其制造方法。 通过使用当将电场施加到压电电容器时通过从电能转换为机械能而致动的压电电容器，RF MEMS开关通过低电压和低功耗来致动。 通过使用蚀刻方法，化学机械抛光法，电镀法等形成盖基板，并且RF MEMS开关具有高可靠性和高产量。

公开(公告)号：US07036312B2

公开(公告)日：2006-05-02

申请号：US10782708

申请日：2004-02-17

Applicant: Stéphane Menard ,  Normand Lassonde ,  Jean-Claude Villeneuve

Inventor： Stéphane Menard ,  Normand Lassonde ,  Jean-Claude Villeneuve

IPC: F01B29/10

CPC classification number: H01H61/04 ,  B81B3/0024 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/051 ,  B81B2203/053 ,  F03G7/06 ,  H01H2001/0047 ,  H01H2001/0078 ,  H01H2061/006 ,  H01H2061/008

Abstract: The MEMS cantilever actuator is designed to be mounted on a substrate. The actuator comprises an elongated hot arm member having two spaced-apart portions, each provided at one end with a corresponding anchor pad connected to the substrate. The portions are connected together at a common end that is opposite the anchor pads. It further comprises an elongated cold arm member adjacent to and substantially parallel of the hot arm member, the cold arm member having at one end an anchor pad connected to the substrate, and a free end that is opposite the anchor pad thereof. A dielectric tether is attached over the common end of the portions of the hot arm member and the free end of the cold arm member. This MEMS actuator allows improving the performance, reliability and manufacturability of MEMS switches.

Abstract translation: MEMS悬臂致动器被设计成安装在基板上。 致动器包括细长的热臂构件，其具有两个间隔开的部分，每个部分在一端设置有连接到衬底的对应的锚垫。 这些部分在与锚垫相对的公共端连接在一起。 它还包括与热臂构件相邻并基本上平行的细长的冷臂构件，冷臂构件的一端具有连接到衬底的锚垫和与衬垫相对的自由端。 介电系绳安装在热臂构件的部分和冷臂构件的自由端的公共端上。 该MEMS致动器允许提高MEMS开关的性能，可靠性和可制造性。

公开(公告)号：US20060006514A1

公开(公告)日：2006-01-12

申请号：US10886970

申请日：2004-07-07

Applicant: Manish Sharma ,  Robert Walmsley

Inventor： Manish Sharma ,  Robert Walmsley

IPC: H01L23/06

CPC classification number: B81B7/0006 ,  B81B2201/014

Abstract: A semiconductor device comprises a plurality of integrated circuits and at least one MEMS device interconnecting the integrated circuits for signal transmission between the circuits.

Abstract translation: 半导体器件包括多个集成电路和至少一个MEMS器件，其互连用于电路之间的信号传输的集成电路。

公开(公告)号：US06969630B2

公开(公告)日：2005-11-29

申请号：US10663983

申请日：2003-09-17

Applicant: Mehmet Ozgur

Inventor： Mehmet Ozgur

IPC: B81B3/00 ,  B81B7/02 ,  H01H1/00 ,  H01H61/00 ,  H01L21/00

CPC classification number: H01H1/0036 ,  B81B2201/014 ,  B81B2201/031 ,  B81C1/00246 ,  B81C2203/0735 ,  H01H61/00 ,  H01H2061/006

Abstract: A monolithically integrated, electromechanical microwave switch, capable of handling signals from DC to millimeter-wave frequencies, and an integrated electromechanical tunable capacitor are described. Both electromechanical devices include movable beams actuated either by thermo-mechanical or by electrostatic forces. The devices are fabricated directly on finished silicon-based integrated circuit wafers, such as CMOS, BiCMOS or bipolar wafers. The movable beams are formed by selectively removing the supporting silicon underneath the thin films available in a silicon-based integrated circuit technology, which incorporates at least one polysilicon layer and two metallization layers. A cavity and a thick, low-loss metallization are used to form an electrode above the movable beam. A thick mechanical support layer is formed on regions where the cavity is located, or substrate is bulk-micro-machined, i.e., etched.

Abstract translation: 描述了能够处理从DC到毫米波频率的信号的单片集成的机电微波开关，以及集成的机电可调电容器。 两个机电装置都包括通过热机械或静电力而致动的可移动梁。 这些器件直接在成品硅基集成电路晶片上制造，例如CMOS，BiCMOS或双极晶片。 可移动光束通过选择性地去除在基于硅的集成电路技术中可获得的薄膜下面的支撑硅而形成，该技术包括至少一个多晶硅层和两个金属化层。 使用空腔和厚的低损耗金属化在可动梁的上方形成电极。 在空腔所在的区域上形成厚的机械支撑层，或者衬底被体微加工，即蚀刻。