公开(公告)号：US06794119B2

公开(公告)日：2004-09-21

申请号：US10074562

申请日：2002-02-12

Applicant: Mark W. Miles

Inventor： Mark W. Miles

IPC: G03F700

CPC classification number: G02B26/001 ,  B81B2201/042 ,  B81B2203/0315 ,  B81C1/00396 ,  B81C2201/0109 ,  B81C2203/0136

Abstract: The invention provides a microfabrication process which may be used to manufacture a MEMS device. The process comprises depositing one or a stack of layers on a base layer, said one layer or an uppermost layer in said stack of layers being a sacrificial layer; patterning said one or a stack of layers to provide at least one aperture therethrough through which said base layer is exposed; depositing a photosensitive layer over said one or a stack of layers; and passing light through said at least one aperture to expose said photosensitive layer.

Abstract translation: 本发明提供了可用于制造MEMS装置的微细加工方法。 该方法包括在基底层上沉积一层或一叠层，所述层中的所述一层或最上层为牺牲层; 图案化所述一层或一叠层以提供穿过其中的所述基层暴露的至少一个孔; 在所述一层或一叠层上沉积感光层; 并使光通过所述至少一个孔以暴露所述感光层。

公开(公告)号：US06784011B2

公开(公告)日：2004-08-31

申请号：US10380476

申请日：2003-03-20

Applicant: Mika Okumura ,  Makio Horikawa ,  Kiyoshi Ishibashi ,  Takefumi Nishigami

Inventor： Mika Okumura ,  Makio Horikawa ,  Kiyoshi Ishibashi ,  Takefumi Nishigami

IPC: H01L2100

CPC classification number: G01P15/125 ,  B81B2203/0118 ,  B81B2203/0136 ,  B81C1/00365 ,  B81C2201/0109 ,  G01P15/0802 ,  G01P2015/0814

Abstract: The present invention relates to a manufacturing method of a thin-film structural body which is formed by using a semiconductor processing technique, and an object thereof is to provide a manufacturing method of a thin-film structural body, capable of reducing a stress difference exerted between a sacrifice film and a substrate upon thermal shrinkage. In order to achieve this object, a sacrifice film (51), which is formed on a substrate (1), is formed by using a PSG film in which the concentration of phosphorus is set to a value which is greater than 3 mol %, and also smaller than 4 mol %. After a thin-film layer (53) has been formed thereon and after the thin-film layer (53) has been patterned, the sacrifice film (51) is removed by an etching process.

Abstract translation: 本发明涉及通过使用半导体加工技术形成的薄膜结构体的制造方法，其目的在于提供一种薄膜结构体的制造方法，能够减少施加的应力差 在牺牲膜和基底之间热收缩。为了实现该目的，通过使用其中设置磷浓度的PSG膜形成在基板（1）上形成的牺牲膜（51） 为大于3摩尔％，还小于4摩尔％。 在其上形成薄膜层（53）之后，在图案化薄膜层（53）之后，通过蚀刻工艺去除牺牲膜（51）。

公开(公告)号：US20040150057A1

公开(公告)日：2004-08-05

申请号：US10625992

申请日：2003-07-24

Applicant: The Regents of The University Of Michigan

Inventor： Wan-Thai Hsu ,  John R. Clark ,  Clark T.C. Nguyen

IPC: H01L021/00

CPC classification number: B81C1/0019 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0271 ,  B81B2203/0307 ,  B81C1/00626 ,  B81C2201/0109 ,  H03H3/007 ,  H03H3/0072 ,  H03H3/013 ,  H03H9/02362 ,  H03H9/2436 ,  H03H9/46 ,  H03H9/462 ,  H03H9/505 ,  H03H2009/02496

Abstract: A method and resulting formed device are disclosed wherein the method combines polysilicon surface-micromachining with metal electroplating technology to achieve a capacitively-driven, lateral micromechanical resonator with submicron electrode-to-resonator capacitor gaps. Briefly, surface-micromachining is used to achieve the structural material for a resonator, while conformal metal-plating is used to implement capacitive transducer electrodes. This technology makes possible a variety of new resonator configurations, including disk resonators and lateral clamped-clamped and free-free flexural resonators, all with significant frequency and Q advantages over vertical resonators. In addition, this technology introduces metal electrodes, which greatly reduces the series resistance in electrode interconnects, thus, minimizing Q-loading effects while increasing the power handling ability of micromechanical resonators.

Abstract translation: 公开了一种方法和产生的形成的器件，其中该方法将多晶硅表面微机械加工与金属电镀技术相结合，以实现具有亚微米电极到谐振器的电容器间隙的电容驱动的横向微机械谐振器。 简而言之，使用表面微加工来实现谐振器的结构材料，而使用保形金属镀来实现电容式换能器电极。 该技术使得各种新的谐振器配置成为可能，包括磁盘谐振器和横向夹紧和自由弯曲谐振器，与垂直谐振器相比具有显着的频率和Q优点。 此外，该技术引入了金属电极，这大大降低了电极互连中的串联电阻，从而在增加微机械谐振器的功率处理能力的同时最大限度地减小了Q负载效应。

公开(公告)号：US20040145056A1

公开(公告)日：2004-07-29

申请号：US10349619

申请日：2003-01-23

Inventor： Kaigham J. Gabriel ,  Xu Zhu

IPC: H01L023/48

CPC classification number: B81C1/00158 ,  B81B2201/018 ,  B81B2201/0257 ,  B81C2201/0109 ,  H01G5/16

Abstract: The present invention is directed to a structure comprised of alternating layers of metal and sacrificial material built up using standard CMOS processing techniques, a process for building such a structure, a process for fabricating devices from such a structure, and the devices fabricated from such a structure. In one embodiment, a first metal layer is carried by a substrate. A first sacrificial layer is carried by the first metal layer. A second metal layer is carried by the sacrificial layer. The second metal layer has a portion forming a micro-machined metal mesh. When the portion of the first sacrificial layer in the area of the micro-machined metal mesh is removed, the micro-machined metal mesh is released and suspended above the first metal layer a height determined by the thickness of the first sacrificial layer. The structure may be varied by providing a base layer of sacrificial material between the surface of the substrate and the first metal layer. In that manner, a portion of the first metal layer may form a micro-machined mesh which is released when a portion of the base sacrificial layer in the area of the micro-machined mesh is removed. Additionally, a second layer of sacrificial material and a third metal layer may be provided. A micro-machined mesh may be formed in a portion of the third metal layer. The structure of the present invention may be used to construct variable capacitors, switches and, when certain of the meshes are sealed, microspeakers and microphones.

Abstract translation: 本发明涉及由使用标准CMOS处理技术构建的金属和牺牲材料的交替层的结构，用于构建这种结构的工艺，用于从这种结构制造器件的工艺以及由这样的器件制造的器件 结构体。 在一个实施例中，第一金属层由衬底承载。 第一牺牲层由第一金属层承载。 第二金属层由牺牲层承载。 第二金属层具有形成微加工金属网的部分。 当去除微加工金属网的区域中的第一牺牲层的部分时，微加工金属网被释放并悬浮在第一金属层上方的高度由第一牺牲层的厚度确定。 可以通过在衬底的表面和第一金属层之间提供牺牲材料的基底层来改变结构。 以这种方式，第一金属层的一部分可以形成微机加工的网，其在微加工网的区域中的部分基底牺牲层被去除时释放。 另外，可以提供第二层牺牲材料和第三金属层。 微加工网可以形成在第三金属层的一部分中。 本发明的结构可用于构造可变电容器，开关，并且当确定的网孔被密封时，微型扬声器和麦克风。

公开(公告)号：US20040121564A1

公开(公告)日：2004-06-24

申请号：US10328922

申请日：2002-12-23

Applicant: Motorola Inc.

Inventor： Bishnu Gogoi

IPC: H01L021/00 ,  H01L021/20 ,  H01L021/36

CPC classification number: B81B3/001 ,  B81C2201/0109 ,  B81C2201/0177

Abstract: A method for creating a semiconductor structure is provided. In accordance with the method, a semiconductor substrate (101) is provided over which is disposed a sacrificial layer (103), and which has a thin single crystal semiconductor layer (105) disposed over the sacrificial layer (103). An opening (107) is then created which extends through the semiconductor layer (105) and into the sacrificial layer (103). The semiconductor layer (105) is then epitaxially grown to a suitable device thickness, thereby resulting in a device layer. The semiconductor layer is grown such that the resulting device layer extends over the opening (107), and such that the surface of the portion of the device layer extending over the opening is single crystal silicon.

Abstract translation: 提供了一种用于制造半导体结构的方法。 根据该方法，提供半导体衬底（101），在其上设置有牺牲层（103），并且具有设置在牺牲层（103）上方的薄单晶半导体层（105）。 然后产生延伸穿过半导体层（105）并进入牺牲层（103）的开口（107）。 然后将半导体层（105）外延生长至合适的器件厚度，由此产生器件层。 生长半导体层使得所得到的器件层在开口（107）上延伸，并且使得在开口上延伸的器件层的部分的表面是单晶硅。

公开(公告)号：US20040053434A1

公开(公告)日：2004-03-18

申请号：US09952626

申请日：2001-09-13

Applicant: Silicon Light Machines

Inventor： Mike Bruner

IPC: H01L021/00

CPC classification number: B81C1/00484 ,  B81B2201/0271 ,  B81B2203/0136 ,  B81C1/00246 ,  B81C1/00333 ,  B81C2201/0109 ,  B81C2201/014 ,  B81C2203/0136 ,  B81C2203/0735

Abstract: The current invention provides for encapsulated release structures, intermediates thereof and methods for their fabrication. The multi-layer structure has a capping layer, that preferably comprises silicon oxide and/or silicon nitride, and which is formed over an etch resistant substrate. A patterned device layer, preferably comprising silicon nitride, is embedded in a sacrificial material, preferably comprising polysilicon, and is disposed between the etch resistant substrate and the capping layer. Access trenches or holes are formed in to capping layer and the sacrificial material are selectively etched through the access trenches, such that portions of the device layer are release from sacrificial material. The etchant preferably comprises a noble gas fluoride NGF2x (wherein NgnullXe, Kr or Ar: and where xnull1, 2 or 3). After etching that sacrificial material, the access trenches are sealed to encapsulate released portions the device layer between the etch resistant substrate and the capping layer. The current invention is particularly useful for fabricating MEMS devices, multiple cavity devices and devices with multiple release features.

Abstract translation: 本发明提供了包封的释放结构，其中间体及其制备方法。 多层结构具有覆盖层，其优选地包括氧化硅和/或氮化硅，并且其形成在耐蚀刻衬底上。 优选地包括氮化硅的图案化器件层嵌入牺牲材料中，优选地包括多晶硅，并且设置在耐蚀刻衬底和覆盖层之间。 进入沟槽或孔形成在覆盖层中，并且牺牲材料通过进入沟槽被选择性地蚀刻，使得器件层的部分从牺牲材料释放。 蚀刻剂优选包含惰性气体氟化物NGF2x（其中Ng = Xe，Kr或Ar：其中x = 1,2或3）。 在蚀刻该牺牲材料之后，进入沟槽被密封以将器件层的释放部分封装在耐蚀刻衬底和覆盖层之间。 本发明对于制造具有多个释放特征的MEMS器件，多腔器件和器件特别有用。

公开(公告)号：US06688179B2

公开(公告)日：2004-02-10

申请号：US10280264

申请日：2002-10-24

Applicant: Michael D. Potter ,  Alexander E. Martens

Inventor： Michael D. Potter ,  Alexander E. Martens

IPC: G01L700

CPC classification number: B81C1/00158 ,  B81B2201/0257 ,  B81C2201/0109 ,  G01L9/0073 ,  G01L9/0075

Abstract: A pressure transducer system includes a housing with a chamber, a member with a stored electrical charge, and a pair of electrodes that are at least partially in alignment with each other. At least a portion of the chamber is at a reference pressure. The member is connected to the housing and extends across at least a portion of the chamber. Each of the pair of electrodes is connected to the housing and is spaced from and on substantially opposing sides of the member. The member is movable with respect to the pair of electrodes or one of the pair of electrodes is movable with respect to the member in response to a monitored pressure.

Abstract translation: 压力传感器系统包括具有室的壳体，具有存储的电荷的构件和至少部分地彼此对准的一对电极。 腔室的至少一部分处于参考压力。 该构件连接到壳体并且延伸穿过腔室的至少一部分。 一对电极中的每一个连接到壳体并与构件的基本上相对的两侧间隔开。 该构件相对于一对电极是可移动的，或者该对电极中的一个可响应于所监视的压力而相对于构件移动。

公开(公告)号：US20040001264A1

公开(公告)日：2004-01-01

申请号：US10186911

申请日：2002-06-28

Inventor： Christopher Gudeman ,  James Hunter ,  Richard Yeh ,  David T. Amm

IPC: G02B005/08 ,  G02B007/182

CPC classification number: B81C1/00111 ,  B81B2203/0136 ,  B81B2203/0307 ,  B81C2201/0109 ,  G02B26/0808

Abstract: A MEM device in accordance with the invention comprises one or more movable micro-structures which are preferably ribbon structures or cantilever structures. The ribbon structures or cantilever structures are preferably coupled to a substrate structure through one or more support regions comprising a plurality of anchor support features and a plurality of post support features. The MEM device is preferably an optical MEM device with a plurality of movable ribbon structures each being supported by opposing ends through support regions each comprising a plurality of anchor support features and a plurality of post support features. In accordance with the method of the embodiments, the positions of the anchor and post support features, the number of anchor and support features and the spacings between the support features can selected during fabrication of the device to determine an operating condition of the MEM device.

Abstract translation: 根据本发明的MEM装置包括优选带状结构或悬臂结构的一个或多个可移动微结构。 带状结构或悬臂结构优选地通过包括多个锚固支撑特征和多个支撑支撑特征的一个或多个支撑区域耦合到基底结构。 MEM装置优选地是具有多个可移动带结构的光学MEM装置，每个可移动带结构各自由相对的端部支撑，每个支撑区域包括多个锚固支撑特征和多个支撑支撑特征。 根据实施例的方法，可以在制造装置期间选择锚和支柱特征的位置，锚固和支撑特征的数量以及支撑特征之间的间隔，以确定MEM装置的操作状态。

公开(公告)号：US06667219B1

公开(公告)日：2003-12-23

申请号：US09651815

申请日：2000-08-30

Applicant: Jerome Michael Eldridge

Inventor： Jerome Michael Eldridge

IPC: H01L2120

CPC classification number: B81C1/00119 ,  B81B2203/0315 ,  B81B2203/0338 ,  B81C1/00047 ,  B81C2201/0109 ,  B81C2201/0146 ,  H01L21/31138 ,  H01L28/40

Abstract: In one aspect, the invention includes a method of forming a void region associated with a substrate, comprising: a) providing a substrate; b) forming a sacrificial mass over the substrate; c) subjecting the mass to hydrogen to convert a component of the mass to a volatile form; and d) volatilizing the volatile form of the component from the mass to leave a void region associated with the substrate. In another aspect, the invention includes a method of forming a capacitor construction, comprising: a) forming a first capacitor electrode over a substrate; b) forming a sacrificial material proximate the first capacitor electrode; c) forming a second capacitor electrode proximate the sacrificial material, the second capacitor electrode being separated from the first capacitor electrode by the sacrificial material, at least one of the first and second electrodes being a metal-comprising layer; and d) subjecting the sacrificial material to conditions which transport a component from the sacrificial material to the metal-comprising layer, the transported component leaving a void region between the first and second capacitor electrodes.

Abstract translation: 一方面，本发明包括形成与衬底相关联的空隙区域的方法，包括：a）提供衬底; b）在衬底上形成牺牲物质; c）使所述物质经受氢气将所述物质的组分转化为挥发性形式; 以及d）从所述物质挥发所述组分的挥发性形式以留下与所述基材相关联的空隙区域。 另一方面，本发明包括一种形成电容器结构的方法，包括：a）在衬底上形成第一电容器电极; b）在第一电容器电极附近形成牺牲材料; c）在所述牺牲材料附近形成第二电容器电极，所述第二电容器电极通过所述牺牲材料与所述第一电容器电极分离，所述第一和第二电极中的至少一个是含金属的层; 以及d）对所述牺牲材料进行将组分从所述牺牲材料输送到所述含金属层的条件，所述传输部件在所述第一和第二电容器电极之间留下空隙区域。

公开(公告)号：US06617185B1

公开(公告)日：2003-09-09

申请号：US10071772

申请日：2002-02-07

Applicant: Aaron Geisberger

Inventor： Aaron Geisberger

IPC: H01L2100

CPC classification number: B81C1/00126 ,  B81B2201/031 ,  B81B2201/13 ,  B81C2201/0109 ,  H01H2001/0047 ,  H01H2001/0063 ,  H01H2061/006

Abstract: In one embodiment, the present invention is directed to a method of fabricating a micro-mechanical latching device, comprising: depositing a structural layer in a fabrication plane, wherein the first structural layer possesses a topography; depositing a sacrificial layer adjacent to the first layer such that the sacrificial layer conforms to the topography of the first layer; depositing a second structural layer that conforms to the topography of the first layer; removing the sacrificial layer; and using at least the first structural layer and second structural layer to fabricate the micro-mechanical latching device.

Abstract translation: 在一个实施例中，本发明涉及一种制造微机械闭锁装置的方法，包括：在制造平面中沉积结构层，其中所述第一结构层具有形貌; 沉积与第一层相邻的牺牲层，使得牺牲层符合第一层的形貌; 沉积符合第一层的形貌的第二结构层; 去除牺牲层; 并且至少使用第一结构层和第二结构层来制造微机械闭锁装置。