公开(公告)号：US20170210938A1

公开(公告)日：2017-07-27

申请号：US15514929

申请日：2015-09-30

Applicant: LG Chem, Ltd.

Inventor： Se Jin Ku ,  Mi Sook Lee ,  Hyung Ju Ryu ,  Jung Keun Kim ,  Sung Soo Yoon ,  No Jin Park ,  Je Gwon Lee ,  Eun Young Choi

IPC: C09D153/00 ,  B05D1/00 ,  G03F7/16 ,  B05D3/00 ,  C08F293/00 ,  G03F7/09

CPC classification number: C08L53/005 ,  B05D1/005 ,  B05D3/007 ,  B81C1/00428 ,  B81C2201/0149 ,  B82Y40/00 ,  C01P2002/70 ,  C07B2200/00 ,  C08F2/14 ,  C08F32/06 ,  C08F212/08 ,  C08F216/12 ,  C08F220/10 ,  C08F220/26 ,  C08F220/30 ,  C08F293/00 ,  C08F293/005 ,  C08F299/024 ,  C08F2220/301 ,  C08F2438/03 ,  C08G61/08 ,  C08G61/12 ,  C08G2261/1424 ,  C08G2261/1426 ,  C08G2261/332 ,  C08G2261/3324 ,  C08G2261/40 ,  C08G2261/418 ,  C08J5/18 ,  C08J7/123 ,  C08J2353/00 ,  C08L53/00 ,  C08L53/02 ,  C09D153/00 ,  G03F7/0002 ,  G03F7/0046 ,  G03F7/039 ,  G03F7/091 ,  G03F7/16 ,  G03F7/162 ,  G03F7/165 ,  G03F7/2004 ,  G03F7/30 ,  H01L21/0273 ,  H01L21/31055 ,  H01L21/31056 ,  H01L21/31058 ,  C08F214/182

Abstract: Provided is a method of manufacturing a patterned substrate. The method may be applied to a process of manufacturing a device such as an electronic device or integrated circuit, or another use, for example, to manufacture an integrated optical system, a guidance and detection pattern of a magnetic domain memory, a flat panel display, a LCD, a thin film magnetic head or an organic light emitting diode, and used to construct a pattern on a surface to be used to manufacture a discrete tract medium such as an integrated circuit, a bit-patterned medium and/or a magnetic storage device such as a hard drive.

公开(公告)号：US20170209845A1

公开(公告)日：2017-07-27

申请号：US15482867

申请日：2017-04-10

Applicant: Ramot at Tel-Aviv University Ltd.

Inventor： Ehud GAZIT ,  Meital RECHES

IPC: B01J19/00

CPC classification number: B01J19/0046 ,  B01J2219/00596 ,  B01J2219/00709 ,  B01J2219/00725 ,  B81B2203/0361 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y5/00 ,  B82Y15/00 ,  B82Y25/00 ,  B82Y30/00 ,  B82Y40/00 ,  C07K5/06078 ,  C07K17/14 ,  Y10S977/793 ,  Y10S977/896

Abstract: A nanostructure array is disclosed. The nanostructure array comprises a plurality of elongated organic nanostructures arranged generally perpendicularly to a plane.

公开(公告)号：US09636887B2

公开(公告)日：2017-05-02

申请号：US15138343

申请日：2016-04-26

Applicant: THE UNIVERSITY OF MASSACHUSETTS

Inventor： Thomas P. Russell ,  Soojin Park ,  Jia-Yu Wang ,  Bokyung Kim

IPC: H01L51/00 ,  B32B3/10 ,  B81C1/00 ,  B82Y30/00 ,  B32B5/16

CPC classification number: B32B3/10 ,  B32B5/16 ,  B32B2264/105 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y30/00 ,  Y10T428/12049 ,  Y10T428/24355

Abstract: Nanopatterned surfaces are prepared by a method that includes forming a block copolymer film on a substrate, annealing and surface reconstructing the block copolymer film to create an array of cylindrical voids, depositing a metal on the surface-reconstructed block copolymer film, and heating the metal-coated block copolymer film to redistribute at least some of the metal into the cylindrical voids. When very thin metal layers and low heating temperatures are used, metal nanodots can be formed. When thicker metal layers and higher heating temperatures are used, the resulting metal structure includes nanoring-shaped voids. The nanopatterned surfaces can be transferred to the underlying substrates via etching, or used to prepare nanodot- or nanoring-decorated substrate surfaces.

公开(公告)号：US20170110319A1

公开(公告)日：2017-04-20

申请号：US14918310

申请日：2015-10-20

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Tsung-Han Ko ,  Ching-Yu Chang ,  Kuan-Hsin Lo

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/0271 ,  B81C2201/0149 ,  G03F7/0002 ,  H01L21/02118 ,  H01L21/02315 ,  H01L21/02318 ,  H01L21/02356 ,  H01L21/31138

Abstract: Disclosed is a method of forming a semiconductor device using a self-assembly (DSA) patterning process. The method includes forming a patterned feature over a substrate; applying an orientation material that includes a first polymer and a second polymer over the substrate, wherein the first polymer has a first activation energy and the second polymer has a second activation energy; baking the substrate at first temperature thereby forming a first orientation layer that includes the first polymer; baking the substrate at second temperature thereby forming a second orientation layer that includes the second polymer; and performing a directed self-assembly (DSA) process over the first and the second orientation layers.

公开(公告)号：US09625815B2

公开(公告)日：2017-04-18

申请号：US14039140

申请日：2013-09-27

Applicant: Paul A. Nyhus ,  Eungnak Han ,  Swaminathan Sivakumar ,  Ernisse S. Putna

Inventor： Paul A. Nyhus ,  Eungnak Han ,  Swaminathan Sivakumar ,  Ernisse S. Putna

IPC: H01L21/768 ,  H01L21/027 ,  G03F7/039 ,  H01L21/033 ,  H01L21/3105 ,  H01L21/32 ,  G03F7/00

CPC classification number: G03F7/0392 ,  B81C1/00428 ,  B81C2201/0149 ,  G03F7/0002 ,  G03F7/0045 ,  G03F7/038 ,  G03F7/039 ,  G03F7/11 ,  G03F7/16 ,  G03F7/2004 ,  G03F7/2037 ,  G03F7/26 ,  H01L21/0337 ,  H01L21/31058 ,  H01L21/32 ,  H01L21/3205 ,  H01L21/32139 ,  H01L21/76816

Abstract: Self-aligned via and plug patterning for back end of line (BEOL) interconnects are described. In an example, a structure for directed self-assembly includes a substrate and a block co-polymer structure disposed above the substrate. The block co-polymer structure has a polystyrene (PS) component and a polymethyl methacrylate (PMMA) component. One of the PS component or the PMMA component is photosensitive.

公开(公告)号：US20170008992A1

公开(公告)日：2017-01-12

申请号：US15101827

申请日：2014-12-08

Applicant: LG Chem, Ltd.

Inventor： Je Gwon Lee ,  Jung Keun Kim ,  No Jin Park ,  Sung Soo Yoon

IPC: C08F293/00 ,  C07C217/84 ,  G03F7/00 ,  C07F7/18 ,  C09D153/00 ,  C07C43/215 ,  C07D209/48

CPC classification number: C08F293/005 ,  B81C1/00428 ,  B81C1/00531 ,  B81C2201/0149 ,  B82Y40/00 ,  C07C35/48 ,  C07C43/215 ,  C07C43/225 ,  C07C217/84 ,  C07C2601/16 ,  C07D209/48 ,  C07F7/1804 ,  C08F12/20 ,  C08F12/22 ,  C08F12/26 ,  C08F12/32 ,  C08F212/14 ,  C08F220/10 ,  C08F220/30 ,  C08F2438/03 ,  C08J5/18 ,  C08J7/123 ,  C08J7/14 ,  C08J2353/00 ,  C09D153/00 ,  G03F7/0002 ,  G03F7/038 ,  G03F7/039 ,  G03F7/162

Abstract: The present application provides the block copolymers and their application. The block copolymer has an excellent self assembling property and phase separation and various required functions can be freely applied thereto as necessary.

公开(公告)号：US09530645B2

公开(公告)日：2016-12-27

申请号：US14395158

申请日：2013-04-15

Applicant: Tokyo Electron Limited

Inventor： Makoto Muramatsu ,  Takahiro Kitano ,  Tadatoshi Tomita ,  Keiji Tanouchi

IPC: G03F7/26 ,  H01L21/027 ,  G03F7/40 ,  G03F7/00 ,  G03F7/16 ,  B81C1/00 ,  H01L21/67 ,  H01L21/3105 ,  H01L21/311

CPC classification number: H01L21/0274 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/0002 ,  G03F7/0035 ,  G03F7/16 ,  G03F7/168 ,  G03F7/40 ,  G03F7/405 ,  H01L21/0271 ,  H01L21/0273 ,  H01L21/31058 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/67115 ,  H01L21/6715

Abstract: A photoresist pattern used for forming a pattern of a block copolymer is formed on a substrate, and then an acid solution is supplied and an alkaline solution is further supplied to the photoresist pattern so as to slim and smooth the photoresist pattern. A block copolymer solution is applied to the substrate on which the smoothed photoresist pattern has been formed, to form a film of the block copolymer, and the film is heated.

Abstract translation: 在基板上形成用于形成嵌段共聚物图案的光致抗蚀剂图案，然后供给酸溶液，并且进一步向光致抗蚀剂图案供给碱溶液，以使光致抗蚀剂图案变薄和平滑。 将嵌段共聚物溶液施加到其上形成有平滑化的光致抗蚀剂图案的基板上，以形成嵌段共聚物的膜，并且加热该膜。

公开(公告)号：US09493588B2

公开(公告)日：2016-11-15

申请号：US13992604

申请日：2012-03-16

Applicant: Yang-Kyoo Han ,  Je-Gwon Lee ,  Su-Hwa Kim

Inventor： Yang-Kyoo Han ,  Je-Gwon Lee ,  Su-Hwa Kim

IPC: C08F22/38 ,  H01L21/3065 ,  B82Y10/00 ,  B82Y40/00 ,  C08F293/00 ,  G03F7/00 ,  C08F220/18 ,  C08F220/56 ,  B81C1/00

CPC classification number: C08F22/38 ,  B81C1/00396 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y10/00 ,  B82Y40/00 ,  C08F220/18 ,  C08F220/56 ,  C08F293/005 ,  C08F2438/03 ,  G03F7/0002 ,  H01L21/3065

Abstract: The present invention relates to a diblock copolymer that may facilitate formation of a finer nano pattern, and be used for manufacture of an electronic device including a nano pattern or a bio sensor, and the like, a method for preparing the same, and a method for forming a nano pattern using the same,The diblock copolymer comprises a hard segment including at least one specific acrylamide-based repeat unit, and a soft segment including at least one (meth)acrylate-based repeat unit.

Abstract translation: 二嵌段共聚物包含包含至少一个特定丙烯酰胺基重复单元的硬链段和包含至少一种（甲基）丙烯酸酯基重复单元的软链段。

公开(公告)号：US20160319158A1

公开(公告)日：2016-11-03

申请号：US15103748

申请日：2014-12-10

Applicant: ARKEMA FRANCE ,  UNIVERSITE DE BORDEAUX ,  INSTITUT POLYTECHNIQUE DE BORDEAUX ,  CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS)

Inventor： Guillaume FLEURY ,  Christophe NAVARRO ,  Georges HADZIIOANNOU ,  Celia NICOLET ,  Xavier CHEVALIER ,  Chrystilla REBOUL ,  Veronica CASTILLO ,  Gilles PECASTAINGS

IPC: C09D187/00 ,  B05D3/06 ,  H01L21/027 ,  B01J31/06

CPC classification number: C09D187/005 ,  B01J31/06 ,  B05D3/06 ,  B81C1/00031 ,  B81C2201/0149 ,  C08F293/005 ,  C08F2438/02 ,  C08J9/26 ,  C09D153/00 ,  G03F7/0002 ,  H01L21/0271

Abstract: The invention relates to a process for producing a film of self-assembled block copolymers on a substrate, said process consisting in carrying out a simultaneous deposition of block copolymer and of random copolymer by means of a solution containing a blend of block copolymer and of random copolymer of different chemical nature and which are immiscible, then in carrying out an annealing treatment allowing the promotion of the phase segregation inherent in the self-assembly of block copolymers.

Abstract translation: 本发明涉及在基材上制备自组装嵌段共聚物的膜的方法，所述方法包括通过含有嵌段共聚物和随机的共混物的溶液同时沉积嵌段共聚物和无规共聚物 共聚物，其不同的化学性质并且不混溶，然后进行退火处理，允许促进嵌段共聚物的自组装固有的相分离。

公开(公告)号：US20160311958A1

公开(公告)日：2016-10-27

申请号：US15102089

申请日：2014-12-08

Applicant: LG CHEM, LTD.

Inventor： Jung Keun Kim ,  Je Gwon Lee ,  No Jin Park ,  Sung Soo Yoon

IPC: C08F293/00

CPC classification number: C08F293/005 ,  B81C1/00428 ,  B81C1/00531 ,  B81C2201/0149 ,  B82Y40/00 ,  C07C35/48 ,  C07C43/215 ,  C07C43/225 ,  C07C217/84 ,  C07C2601/16 ,  C07D209/48 ,  C07F7/1804 ,  C08F12/20 ,  C08F12/22 ,  C08F12/26 ,  C08F12/32 ,  C08F212/14 ,  C08F220/10 ,  C08F220/30 ,  C08F2438/03 ,  C08J5/18 ,  C08J7/123 ,  C08J7/14 ,  C08J2353/00 ,  C09D153/00 ,  G03F7/0002 ,  G03F7/038 ,  G03F7/039 ,  G03F7/162

Abstract: The present application provides the block copolymers and their application. The block copolymer has an excellent self assembling property and phase separation and various required functions can be freely applied thereto as necessary.

Abstract translation: 本申请提供了嵌段共聚物及其应用。 嵌段共聚物具有优异的自组装性和相分离性，并且根据需要可以自由地施加各种所需的功能。