公开(公告)号：US5187454A

公开(公告)日：1993-02-16

申请号：US825658

申请日：1992-01-23

Applicant: Kenneth S. Collins ,  John R. Trow ,  Craig A. Roderick ,  Jay D. Pinson, II ,  Douglas A. Buchberger, II

Inventor： Kenneth S. Collins ,  John R. Trow ,  Craig A. Roderick ,  Jay D. Pinson, II ,  Douglas A. Buchberger, II

IPC: H02J3/00 ,  H01L21/302 ,  H03H7/40 ,  H03H11/30 ,  H05H1/46

CPC classification number: H03H11/30 ,  H01F2029/143

Abstract: A method, and corresponding apparatus, for matching a generator impedance with an unknown and possibly changing load impedance, to maximize power transferred to the load. The apparatus includes an impedance matching network, and a network model, to estimate the load impedance from known present network values and a measurement of network input impedance, and to estimate optimum network values from the input impedance and the estimated load impedance. A controller computes new network values based on the present and optimum values, and outputs the new values to the network. The process is repeated using the new network values to estimate the load impedance and generate a new set of optimum values. The controller uses a control equation with parameters selected to ensure rapid convergence on the maximum-power condition, without overshoot or instability. Preferably, current and voltage measurements are made in the network to enable correction of the network values based on these measurements on the actual network. Although the invention may be used with any type of variable-impedance network hardware, preferably current-controlled inductances are used as the variable network impedances.

Abstract translation: 一种用于将发电机阻抗与未知且可能变化的负载阻抗进行匹配的方法和相应装置，以最大化传递到负载的功率。 该装置包括阻抗匹配网络和网络模型，以从已知的现有网络值估计负载阻抗和网络输入阻抗的测量，并根据输入阻抗和估计的负载阻抗来估计最佳网络值。 控制器根据当前和最佳值计算新的网络值，并将新值输出到网络。 使用新的网络值重复该过程以估计负载阻抗并产生一组新的最优值。 控制器使用具有选定参数的控制方程，以确保最大功率条件下的快速收敛，无过冲或不稳定。 优选地，在网络中进行电流和电压测量以使得能够基于在实际网络上的这些测量来校正网络值。 虽然本发明可以与任何类型的可变阻抗网络硬件一起使用，但优选地使用电流控制的电感作为可变网络阻抗。

公开(公告)号：US5065118A

公开(公告)日：1991-11-12

申请号：US558290

申请日：1990-07-26

Applicant: Kenneth S. Collins ,  Craig A. Roderick

Inventor： Kenneth S. Collins ,  Craig A. Roderick

IPC: G01R31/00 ,  H01J37/32 ,  H01P5/02 ,  H01P5/04

CPC classification number: H01J37/32256 ,  H01J37/32192 ,  H01P5/04

Abstract: A matching network matches an output impedance of a source with an input impedance of a load. The matching network includes a plurality of transmission line stubs. Each transmission line stub includes a first transmission line conductor, a second transmission line conductor running parallel to but not in electrical contact with the first transmission line conductor, and ferrite dielectric material between the first transmission line conductor and the second transmission line conductor. A magnetic field is used to vary the relative permeability of the ferrite dielectric material.

Abstract translation: 匹配的网络将源的输出阻抗与负载的输入阻抗匹配。 匹配网络包括多个传输线存根。 每个传输线短截线包括第一传输线导体，平行于但不与第一传输线导体电接触的第二传输线导体，以及在第一传输线导体和第二传输线导体之间的铁氧体介电材料。 使用磁场来改变铁氧体介电材料的相对磁导率。

公开(公告)号：US06790311B2

公开(公告)日：2004-09-14

申请号：US10021195

申请日：2001-10-30

Applicant: Kenneth S Collins ,  Michael Rice ,  Farahmand E Askarinam ,  Douglas A Buchberger, Jr. ,  Craig A Roderick

Inventor： Kenneth S Collins ,  Michael Rice ,  Farahmand E Askarinam ,  Douglas A Buchberger, Jr. ,  Craig A Roderick

IPC: C23C1600

CPC classification number: H01J37/32458 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J37/32871 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01L21/31116 ,  H01L21/6831

Abstract: In a plasma reactor including a reactor chamber, a workpiece support for holding a workpiece inside the chamber during processing and an inductive antenna, a window electrode proximal a wall of the chamber, the antenna and wall being positioned adjacently, the window electrode being operable as (a) a capacitive electrode accepting RF power to capacitively coupled plasma source power into the chamber, and (b) a window electrode passing RF power therethrough from said antenna into the chamber to inductively couple plasma source power into the chamber.

Abstract translation: 在包括反应器室的等离子体反应器中，用于在处理期间将工件保持在室内的工件支撑件和感应天线，靠近室壁的窗口电极，天线和壁相邻地定位，窗口电极可操作为 （a）容纳RF功率的电容电极，以将等离子体源功率电容耦合到腔室中，以及（b）将RF功率从所述天线传递到腔室中以将等离子体源功率感应耦合到腔室中的窗口电极。

公开(公告)号：US06545420B1

公开(公告)日：2003-04-08

申请号：US08468573

申请日：1995-06-06

Applicant: Kenneth S. Collins ,  Craig A. Roderick ,  John R. Trow ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel ,  Jay D. Pinson, II ,  Tetsuya Ishikawa ,  Lawrence Chang-Lai Lei ,  Masato M. Toshima

Inventor： Kenneth S. Collins ,  Craig A. Roderick ,  John R. Trow ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel ,  Jay D. Pinson, II ,  Tetsuya Ishikawa ,  Lawrence Chang-Lai Lei ,  Masato M. Toshima

IPC: H01J724

CPC classification number: H01J37/32871 ,  C23C16/509 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32174 ,  H01J37/3222 ,  H01J37/32293 ,  H01J37/32458 ,  H01J37/32522 ,  H01J37/3266 ,  H01J37/32688 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/6831

Abstract: A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.

Abstract translation: 圆顶等离子体反应室使用由RF能量（LF，MF或VHF）驱动的天线，其被感应耦合在反应器穹顶内。 天线在室内产生高密度，低能量等离子体，用于蚀刻金属，电介质和半导体材料。 施加到晶片支撑阴极的辅助RF偏置能量控制阴极护套电压并且独立于密度来控制离子能量。 公开了各种磁和电压处理增强技术，连同蚀刻工艺，沉积工艺和组合蚀刻/沉积处理。 所公开的发明提供敏感设备的处理而不损坏和不加载，从而提高产量。

公开(公告)号：US06488807B1

公开(公告)日：2002-12-03

申请号：US09563825

申请日：2000-05-03

Applicant: Kenneth S. Collins ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel ,  Craig A. Roderick ,  John R. Trow ,  Tetsuya Ishikawa ,  Jay D. Pinson, II ,  Lawrence Chang-Lai Lei ,  Masato M. Toshima ,  Gerald Zheyao Yin

Inventor： Kenneth S. Collins ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel ,  Craig A. Roderick ,  John R. Trow ,  Tetsuya Ishikawa ,  Jay D. Pinson, II ,  Lawrence Chang-Lai Lei ,  Masato M. Toshima ,  Gerald Zheyao Yin

IPC: H05H100

CPC classification number: H01J37/32871 ,  C23C16/507 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/6831

Abstract: The invention is embodied in an RF plasma reactor for processing a semiconductor workpiece, including wall structures for containing a plasma therein, a workpiece support, a coil antenna capable of receiving a source RF power signal and being juxtaposed near the chamber, the workpiece support including a bias electrode capable of receiving a bias RF power signal, and first and second magnet structures adjacent the wall structure and in spaced relationship, with one pole of the first magnet structure facing an opposite pole of the second magnet structure, the magnet structures providing a plasma-confining static magnetic field adjacent said wall structure. The invention is also embodied in an RF plasma reactor for processing a semiconductor workpiece, including one or more wall structures for containing a plasma therein, a workpiece support, the workpiece support comprising a lower electrode, an upper electrode facing the lower electrode and spaced across a plasma generation region of said chamber from said lower electrode, and first and second magnet structures adjacent the wall structure and in spaced relationship with one pole of the first magnet structure facing an opposite pole of the second magnet structure, the magnet structures providing a plasma-confining static magnetic field adjacent said wall structure.

Abstract translation: 本发明体现在用于处理半导体工件的RF等离子体反应器中，其包括用于在其中容纳等离子体的壁结构，工件支撑件，能够接收源RF功率信号并在该室附近并列的线圈天线，所述工件支撑件包括 能够接收偏置RF功率信号的偏置电极，以及与壁结构相邻并且间隔的关系的第一和第二磁体结构，第一磁体结构的一个磁极面对第二磁体结构的相对极，磁体结构提供 等离子体约束的静磁场与所述壁结构相邻。 本发明还体现在用于处理半导体工件的RF等离子体反应器中，该半导体工件包括一个或多个用于在其中容纳等离子体的壁结构，工件支撑件，工件支撑件包括下电极，上电极面向下电极并间隔开 所述腔室的等离子体产生区域与所述下部电极相邻，第一和第二磁体结构邻近所述壁结构并且与所述第一磁体结构的与所述第二磁体结构的相反极的一极相隔开，所述磁体结构提供等离子体 围绕所述壁结构保持静止磁场。

公开(公告)号：US06440866B1

公开(公告)日：2002-08-27

申请号：US09595750

申请日：2000-06-16

Applicant: Kenneth S. Collins ,  Michael Rice ,  David W. Groechel ,  Gerald Zheyao Yin ,  Jon Mohn ,  Craig A. Roderick ,  Douglas Buchberger ,  Chan-Lon Yang ,  Yuen-Kui Wong ,  Jeffrey Marks ,  Peter Keswick

Inventor： Kenneth S. Collins ,  Michael Rice ,  David W. Groechel ,  Gerald Zheyao Yin ,  Jon Mohn ,  Craig A. Roderick ,  Douglas Buchberger ,  Chan-Lon Yang ,  Yuen-Kui Wong ,  Jeffrey Marks ,  Peter Keswick

IPC: H01L2100

CPC classification number: H01J37/32871 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01J2237/3382 ,  H01L21/31116 ,  H01L21/6831

Abstract: A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.

Abstract translation: 本发明的一般方法是在与氟碳或氟烃气体的蚀刻过程期间在反应器室内提供聚合物硬化前体件（例如硅，碳，碳化硅或氮化硅，但优选为硅） ，并且将聚合物硬化前体件高于聚合温度高于氧化硅对硅蚀刻选择性的期望增加。 通常，该聚合物硬化前体或硅片可以是反应器室壁和/或天花板的一个整体部分或者单独的，可消耗的和快速可拆卸的部件，并且加热/冷却装置可以是任何合适的类型，包括导电的装置 或远程加热硅片。

公开(公告)号：US5583737A

公开(公告)日：1996-12-10

申请号：US452351

申请日：1995-05-26

Applicant: Kenneth S. Collins ,  John R. Trow ,  Joshua Chiu-Wing Tsui ,  Craig A. Roderick ,  Nicolas J. Bright ,  Jeffrey Marks ,  Tetsuya Ishikawa ,  Jian Ding

Inventor： Kenneth S. Collins ,  John R. Trow ,  Joshua Chiu-Wing Tsui ,  Craig A. Roderick ,  Nicolas J. Bright ,  Jeffrey Marks ,  Tetsuya Ishikawa ,  Jian Ding

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  H02N13/00

CPC classification number: H01L21/6833 ,  H01L21/6831

Abstract: An electrostatic chuck for holding a wafer in a plasma processing chamber, the chuck including a pedestal having a top surface, an internal manifold for carrying a cooling gas, and a first plurality of holes leading from the internal manifold toward said top surface; and a dielectric layer on the top surface of the pedestal. The dielectric layer has a top side and second plurality of holes, each of which is aligned with a different one of the holes of the first plurality of holes in the pedestal. The first and second holes form a plurality of passages extending from the internal manifold to the top side of the dielectric layer and through which the cooling gas is supplied to the backside of the wafer. Each of the first holes and the second hole aligned therewith form a different one of the plurality of passages. The passages are concentrated in regions of the dielectric layer that are in proximity to regions of higher leakage of cooling gas when the wafer is held against the electrostatic chuck by an electrostatic force.

Abstract translation: 一种用于将晶片保持在等离子体处理室中的静电卡盘，所述卡盘包括具有顶表面的基座，用于承载冷却气体的内部歧管以及从所述内部歧管向所述顶部表面引导的第一多个孔; 以及在基座的顶表面上的介电层。 电介质层具有顶侧和第二多个孔，每个孔与基座中的第一多个孔的不同孔中的一个对准。 第一和第二孔形成从内部歧管延伸到电介质层的顶侧的多个通道，并且冷却气体通过该通道供应到晶片的背面。 与其对准的第一孔和第二孔中的每一个形成多个通道中的不同的一个。 当晶片通过静电力固定在静电卡盘上时，通道集中在电介质层的靠近冷却气体泄漏较高区域的区域中。

公开(公告)号：US5392018A

公开(公告)日：1995-02-21

申请号：US975355

申请日：1992-11-12

Applicant: Kenneth S. Collins ,  John Trow ,  Craig A. Roderick ,  Jay D. Pinson, II ,  Douglas A. Buchberger, II ,  Robert P. Hartlage ,  Viktor Shel

Inventor： Kenneth S. Collins ,  John Trow ,  Craig A. Roderick ,  Jay D. Pinson, II ,  Douglas A. Buchberger, II ,  Robert P. Hartlage ,  Viktor Shel

IPC: H01F21/02 ,  H01F29/14 ,  H01J37/32 ,  H01L21/311 ,  H03H7/38 ,  H03H7/40 ,  H03H11/30 ,  H03J3/22 ,  H05H1/46 ,  H01F21/00

CPC classification number: H01J37/32183 ,  H01F29/146 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J37/32871 ,  H01L21/31116 ,  H03H11/30 ,  H03H7/40 ,  H05H1/46 ,  H01F2029/143

Abstract: The disclosure discusses impedance matching circuits based on parallel-resonant L-C tank circuits, and describes a low-loss design for an adjustable inductance element suitable for use in these parallel tank circuits. The application of an impedance matching circuit to a plasma process is also disclosed; in this context, a local impedance transformation circuit is used to improve power transfer to the plasma source antenna.

Abstract translation: 本公开内容讨论了基于并联谐振L-C谐振电路的阻抗匹配电路，并且描述了适用于这些并联电路中的可调电感元件的低损耗设计。 还公开了阻抗匹配电路对等离子体工艺的应用; 在本文中，使用局部阻抗变换电路来改善对等离子体源天线的功率传递。