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公开(公告)号：US11826852B2
公开(公告)日：2023-11-28
申请号：US17088704
申请日：2020-11-04
Applicant: Gigaphoton Inc.
Inventor： Akira Suwa , Osamu Wakabayashi , Masashi Shimbori , Masakazu Kobayashi
CPC classification number: B23K26/1462 , B23K26/126
Abstract: A laser processing apparatus according to the present disclosure includes a placement base on which a processing receiving object is placed, an optical system that guides laser light to the processing receiving object, a gas supply port via which a gas is supplied to a laser light irradiated region of the processing receiving object, a gas recovery port via which the supplied gas is recovered, a mover that moves the irradiated region, and a controller that controls, in accordance with the moving direction of the irradiated region, the direction of the flow of the gas flowing from the gas supply port to the gas recovery port, and the controller changes the direction of the gas flow in response to a change in the moving direction of the irradiated region in such a way that the gas flows in the direction opposite the moving direction of the irradiated region.
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公开(公告)号：US20230352900A1
公开(公告)日：2023-11-02
申请号：US18348518
申请日：2023-07-07
Applicant: Gigaphoton Inc.
Inventor： Koichi FUJII , Osamu WAKABAYASHI
IPC: H01S3/1055 , G03F7/20 , H01S3/139
CPC classification number: H01S3/1055 , G03F7/20 , H01S3/139
Abstract: A laser apparatus includes a grating system; an actuator system configured to adjust a first incident angle on the grating system and a second incident angle on the grating system, the first incident angle being an angle of a first part of an optical beam incident on the grating system, the second incident angle being an angle of a second part of the optical beam incident on the grating system; and a processor configured to control the actuator system to periodically vary the first and second incident angles so that the first and second incident angles are different from each other in at least one of phase and variation range.
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公开(公告)号：US11784453B2
公开(公告)日：2023-10-10
申请号：US17517982
申请日：2021-11-03
Applicant: Gigaphoton Inc.
Inventor： Yuki Tamaru , Taisuke Miura
CPC classification number: H01S3/2325 , H01S3/225
Abstract: A laser system includes a beam shaping unit, a random phase plate, and a collimating optical system in an optical path between a solid-state laser device and an excimer amplifier. When a traveling direction of a laser beam entering the excimer amplifier is a Z direction, a discharge direction of a pair of discharge electrodes is a V direction, a direction orthogonal to the V and Z directions is an H direction, a shaping direction of the beam shaping unit corresponding to the V direction is a first direction, a shaping direction of the beam shaping unit corresponding to the H direction is a second direction, an expansion rate in the first direction is E1, and an expansion rate in the second direction is E2, the beam shaping unit expands a beam section of the laser beam such that an expansion ratio defined by E2/E1 is higher than 1.
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公开(公告)号：US11778721B2
公开(公告)日：2023-10-03
申请号：US17457342
申请日：2021-12-02
Applicant: Gigaphoton Inc.
Inventor： Yuichi Nishimura , Takayuki Yabu , Hiroaki Nakarai
CPC classification number: H05G2/008 , H01S3/11 , H01S3/1305 , H01S3/1643
Abstract: An extreme ultraviolet light generation system includes a target supply unit configured to supply a target substance to a first predetermined region, a laser system configured to output pulse laser light to be radiated to the target substance in the first predetermined region, a first sensor configured to detect an arrival timing at which the target substance has reached a second predetermined region between the target supply unit and the first predetermined region, an optical adjuster arranged on an optical path of the pulse laser light between the laser system and the first predetermined region, and a processor configured to control transmittance of the pulse laser light through the optical adjuster based on the arrival timing.
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公开(公告)号：US11768362B2
公开(公告)日：2023-09-26
申请号：US16853611
申请日：2020-04-20
Applicant: Gigaphoton Inc.
Inventor： Akiyoshi Suzuki , Osamu Wakabayashi
IPC: G02B19/00 , G01J1/42 , G02B5/00 , G02B26/08 , G02B27/09 , G02B27/30 , G03F7/20 , H01L21/027 , H01S3/097
CPC classification number: G02B19/0019 , G01J1/4257 , G02B5/001 , G02B19/0047 , G02B26/0816 , G02B27/0927 , G02B27/0955 , G02B27/30 , G03F7/2006 , G03F7/2008 , H01L21/0275 , G01J2001/4261 , H01S3/097
Abstract: A laser radiation system according to a viewpoint of the present disclosure includes a first optical system configured to convert a first laser flux into a second laser flux, a multimirror device including mirrors, configured to be capable of controlling the angle of the attitude of each of the mirrors, and configured to divide the second laser flux into laser fluxes and reflect the laser fluxes in directions to produce the divided laser fluxes, a Fourier transform optical system configured to focus the divided laser fluxes, and a control section configured to control the angle of the attitude of each of the mirrors in such a way that the Fourier transform optical system superimposes the laser fluxes, which are divided by the mirrors separate from each other by at least a spatial coherence length of the second laser flux, on one another.
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Patent Agency Ranking
公开(公告)号：US11764541B2
公开(公告)日：2023-09-19
申请号：US17220270
申请日：2021-04-01
Applicant: Gigaphoton Inc.
Inventor： Taisuke Miura , Osamu Wakabayashi , Hironori Igarashi
CPC classification number: H01S5/0428 , G03F7/70041 , G03F7/70575 , H01S3/2308 , H01S3/2375 , H01S5/0092 , H01S5/0687 , H01S5/06808 , H01S5/509 , H01S5/12 , H01S2301/163
Abstract: In a laser system according to a viewpoint of the present disclosure, a first amplifier amplifies first pulsed laser light outputted from a first semiconductor laser system into second pulsed laser light, a wavelength conversion system converts the second pulsed laser light in terms of wavelength into third pulsed laser light, and an excimer amplifier amplifies the third pulsed laser light. The first semiconductor laser system includes a first current controller that controls current flowing through a first semiconductor laser in such a way that first laser light outputted from the first semiconductor laser is caused to undergo chirping and a first semiconductor optical amplifier that amplifies the first laser light into pulsed light. The laser system includes a control section that controls the amount of chirping performed on the first pulsed laser light in such a way that excimer laser light having a target spectral linewidth is achieved.
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27.发明公开公开(公告)号：US20230292426A1
公开(公告)日：2023-09-14
申请号：US18052129
申请日：2022-11-02
Applicant: Gigaphoton Inc.
Inventor： Yoshiyuki HONDA
CPC classification number: H05G2/008 , H05G2/003 , G21K1/067 , G03F7/70033 , G03F7/70191 , G03F7/70533
Abstract: An extreme ultraviolet light generation apparatus includes a target supply unit configured to output a droplet target into a chamber device, a prepulse laser light irradiation system configured to irradiate the droplet target with prepulse laser light having linear polarization to generate a diffusion target, and a main pulse laser light irradiation system configured to irradiate the diffusion target with main pulse laser light to generate extreme ultraviolet light. Here, a cross section perpendicular to an optical axis of the main pulse laser light when being radiated to the diffusion target having a shape longer in a polarization direction of the prepulse laser light when being radiated to the droplet target than in directions other than the polarization direction.
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28.发明公开公开(公告)号：US20230284364A1
公开(公告)日：2023-09-07
申请号：US18163023
申请日：2023-02-01
Applicant: Gigaphoton Inc.
Inventor： Nozomu OUE , Yutaka Shiraishi
CPC classification number: H05G2/006 , H05G2/008 , G03F7/70033 , G03F7/70025 , G21K1/06
Abstract: A target supply system includes a target generation unit configured to generate a liquid target substance by melting a solid target substance at an inside thereof, and output the liquid target substance; an input mechanism configured to introduce the solid target substance to the target generation unit; a heater arranged at the target generation unit; a sensor configured to detect a temperature of the target generation unit; and a processor configured to control an input timing at which the solid target substance is introduced to the target generation unit, perform feedback control on the heater based on a present temperature detected by the sensor, and perform feedforward control on the heater based on the input timing while performing feedback control on the heater.
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公开(公告)号：US20230268710A1
公开(公告)日：2023-08-24
申请号：US18310089
申请日：2023-05-01
Applicant: Gigaphoton Inc.
Inventor： Youichi YAMANOUCHI , Hiroshi UMEDA , Kazuki NAGAI , Takeshi UEYAMA
IPC: H01S3/0977 , H01S3/097
CPC classification number: H01S3/0977 , H01S3/09702
Abstract: A gas laser apparatus according to an aspect of the present disclosure includes a main discharge circuit that supplies main discharge voltage that causes main discharge to a pair of main discharge electrodes, and a pre-ionization circuit that supplies pre-ionization voltage that causes corona discharge to a pre-ionization electrode. The main discharge circuit includes a step-up pulse transformer, a main capacitor and a switch connected to a primary side of the step-up pulse transformer, a first power source that charges the main capacitor, a first capacitor connected in parallel to a secondary side of the step-up pulse transformer, a first magnetic switch connected to the first capacitor, and a peaking capacitor connected in parallel to the first capacitor through the first magnetic switch and to the main discharge electrodes. An interval between start timings of the corona discharge and the main discharge is 30 ns to 60 ns inclusive.
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公开(公告)号：US11710660B2
公开(公告)日：2023-07-25
申请号：US16855427
申请日：2020-04-22
Inventor： Hiroshi Ikenoue , Osamu Wakabayashi , Hiroaki Oizumi , Akira Suwa
IPC: H01L21/225 , H01L21/268 , H01L21/67 , H01S3/11 , H01S3/225 , G02F1/01 , G02B27/09 , H01L21/78 , H01L21/223 , H01S3/23
CPC classification number: H01L21/78 , G02B27/0955 , G02F1/0121 , H01L21/223 , H01L21/268 , H01L21/67092 , H01L21/67115 , H01S3/11 , H01S3/225 , H01S3/2308 , G02F2203/48
Abstract: A laser irradiation method of irradiating, with a pulse laser beam, an irradiation object in which an impurity source film is formed on a semiconductor substrate includes: reading fluence per pulse of the pulse laser beam with which a rectangular irradiation region set on the irradiation object is irradiated and the number of irradiation pulses the irradiation region is irradiated, the fluence being equal to or larger than a threshold at or beyond which ablation potentially occurs to the impurity source film when the irradiation object is irradiated with pulses of the pulse laser beam in the irradiation pulse number and smaller than a threshold at or beyond which damage potentially occurs to the surface of the semiconductor substrate; calculating a scanning speed Vdx; and moving the irradiation object at the scanning speed Vdx relative to the irradiation region while irradiating the irradiation region with the pulse laser beam at the repetition frequency f.
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