公开(公告)号：US20050006723A1

公开(公告)日：2005-01-13

申请号：US10912344

申请日：2004-08-04

Applicant: Reinhard Stengl ,  Thomas Meister ,  Herbert Schafer ,  Martin Franosch

Inventor： Reinhard Stengl ,  Thomas Meister ,  Herbert Schafer ,  Martin Franosch

IPC: H01L21/331 ,  H01L29/732 ,  H01L31/0328

CPC classification number: H01L29/66287 ,  H01L29/7322

Abstract: A bipolar transistor includes a first layer with a collector. A second layer has a base cutout for a base. A third layer includes a lead for the base. The third layer is formed with an emitter cutout for an emitter. An undercut is formed in the second layer adjoining the base cutout. The base is at least partially located in the undercut. In order to obtain a low transition resistance between the lead and the base, an intermediate layer is provided between the first and the second layer. The intermediate layer is selectively etchable with respect to the second layer. At least in the region of the undercut between the lead and the base, a base connection zone is provided that can be adjusted independent of other production conditions. The intermediate layer is removed in a contact region with the base.

Abstract translation: 双极晶体管包括具有集电极的第一层。 第二层具有用于基座的基部切口。 第三层包括用于底座的引线。 第三层形成有用于发射极的发射极切口。 在与基座切口相邻的第二层中形成底切。 基部至少部分位于底切中。 为了在引线和基底之间获得低的过渡电阻，在第一和第二层之间设置中间层。 中间层相对于第二层可选择性地蚀刻。 至少在引线和基座之间的底切区域中，提供可以独立于其他生产条件进行调节的基础连接区域。 在与基底的接触区域中去除中间层。

公开(公告)号：US08872335B2

公开(公告)日：2014-10-28

申请号：US11781282

申请日：2007-07-23

Applicant: Holger Huebner ,  Martin Franosch

Inventor： Holger Huebner ,  Martin Franosch

IPC: H01L23/48 ,  H01L23/31 ,  H01L21/56 ,  H05K3/30 ,  H01L23/00 ,  H01L23/498 ,  H05K3/28

CPC classification number: H05K3/305 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/49816 ,  H01L24/12 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L24/83 ,  H01L24/90 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81193 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/83191 ,  H01L2224/83194 ,  H01L2224/8383 ,  H01L2224/83862 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/15788 ,  H05K3/284 ,  H05K2201/10674 ,  H05K2201/10977 ,  H05K2203/0783 ,  H05K2203/306 ,  Y02P70/613 ,  H01L2924/00

Abstract: It is proposed a method of manufacturing an electronic system wherein a first substrate comprising first connection elements on a first surface of the first substrate is provided; a second substrate comprising second connection elements on a first surface of the second substrate is provided; a polymer layer is applied to at least one of the two first surfaces; the first connection elements are attached to the second connection elements; and the polymer layer is caused to swell during or after the attachment.

Abstract translation: 提出了一种制造电子系统的方法，其中提供包括在第一基板的第一表面上的第一连接元件的第一基板; 提供包括在第二基板的第一表面上的第二连接元件的第二基板; 将聚合物层施加到两个第一表面中的至少一个上; 第一连接元件附接到第二连接元件; 并且在附着期间或之后使聚合物层膨胀。

公开(公告)号：US08501534B2

公开(公告)日：2013-08-06

申请号：US12174359

申请日：2008-07-16

Applicant: Klaus-Guenter Oppermann ,  Martin Franosch ,  Bernhard Gebauer

Inventor： Klaus-Guenter Oppermann ,  Martin Franosch ,  Bernhard Gebauer

IPC: H01L21/00

CPC classification number: H01L23/498 ,  H01L21/56 ,  H01L23/16 ,  H01L23/3121 ,  H01L23/315 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/05001 ,  H01L2224/05026 ,  H01L2224/05568 ,  H01L2224/056 ,  H01L2224/13021 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/16 ,  H01L2224/81136 ,  H01L2224/812 ,  H01L2224/81801 ,  H01L2924/0001 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01033 ,  H03H9/1007 ,  H03H9/105 ,  H03H9/1085 ,  H01L2924/014 ,  H01L2224/05099

Abstract: A method for housing an electronic component in a device package includes providing a first substrate, wherein the electronic component is arranged in a component area on a first main surface of the first substrate, and wherein first contact pads are arranged outside of the component area, forming an open top frame structure around the component area on the first main surface of the first substrate, providing a second substrate having second contact pads, arranged symmetrically to the first contact pads and electrically and mechanically connecting the first main surface of the first substrate with the first main surface of the second substrate, so that the frame structure and the second substrate from a cavity or recess around the electronic component on the first substrate.

Abstract translation: 一种用于在装置封装中容纳电子部件的方法，包括提供第一基板，其中所述电子部件布置在所述第一基板的第一主表面上的部件区域中，并且其中第一接触焊盘布置在所述部件区域的外部， 在所述第一基板的所述第一主表面上的所述部件区域周围形成开放的顶部框架结构，提供具有第二接触焊盘的第二基板，所述第二接触焊盘对称地布置在所述第一接触焊盘上，并且将所述第一基板的所述第一主表面与 第二基板的第一主表面，使得框架结构和第二基板来自第一基板上的电子部件周围的空腔或凹部。

公开(公告)号：US08319344B2

公开(公告)日：2012-11-27

申请号：US12172373

申请日：2008-07-14

Applicant: Klaus-Guenter Oppermann ,  Martin Franosch

Inventor： Klaus-Guenter Oppermann ,  Martin Franosch

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: H01L23/488 ,  H01L21/486 ,  H01L23/49816 ,  H01L24/05 ,  H01L24/11 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05552 ,  H01L2224/05599 ,  H01L2224/1131 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/16 ,  H01L2224/812 ,  H01L2224/81801 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15787 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/00

Abstract: A device with contact elements. One embodiment provides an electrical device including a structure defining a main face. The structure includes an array of cavities and an array of overhang regions, each overhang region defining an opening to one of the cavities. The electrical device further includes an array of contact elements, each contact element only partially filling one of the cavities and protruding from the structure over the main face.

Abstract translation: 具有接触元件的设备。 一个实施例提供一种电气设备，其包括限定主面的结构。 该结构包括空腔阵列和突出区域阵列，每个悬出区域限定到一个空腔的开口。 电气装置还包括接触元件的阵列，每个接触元件仅部分地填充其中一个空腔并从主面上的结构突出。

公开(公告)号：US07947552B2

公开(公告)日：2011-05-24

申请号：US12106667

申请日：2008-04-21

Applicant: Herbert Schäfer ,  Martin Franosch ,  Thomas Meister ,  Josef Böck

Inventor： Herbert Schäfer ,  Martin Franosch ,  Thomas Meister ,  Josef Böck

IPC: H01L21/8238

CPC classification number: H01L21/02639 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02661

Abstract: One embodiment of the present invention relates to method for the concurrent deposition of multiple different crystalline structures on a semiconductor body utilizing in-situ differential epitaxy. In one embodiment of the present invention a preparation surface is formed, resulting in two distinct crystalline regions, a monocrystalline silicon substrate region and an isolating layer region. A monocrystalline silicon layer and an amorphous silicon layer are concurrently formed directly onto the preparation surface in the monocrystalline silicon substrate region and the isolating layer region, respectively. Deposition comprises the formation of two or more sub-layers. The process parameters can be varied for each individual sub-layer to optimize deposition characteristics.

Abstract translation: 本发明的一个实施例涉及利用原位差分外延在半导体主体上同时沉积多个不同结晶结构的方法。 在本发明的一个实施方案中，形成制备表面，得到两个不同的结晶区域，单晶硅衬底区域和隔离层区域。 单晶硅层和非晶硅层同时直接分布在单晶硅衬底区域和隔离层区域的制备表面上。 沉积包括形成两个或更多个子层。 可以为每个单独的子层改变工艺参数以优化沉积特性。

公开(公告)号：US20110042764A1

公开(公告)日：2011-02-24

申请号：US12938568

申请日：2010-11-03

Applicant: Klaus-Guenter Oppermann ,  Martin Franosch ,  Martin Handtmann

Inventor： Klaus-Guenter Oppermann ,  Martin Franosch ,  Martin Handtmann

IPC: H01L29/84

CPC classification number: H03H9/02125 ,  H01L21/6835 ,  H01L23/3121 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/96 ,  H01L24/97 ,  H01L2221/68368 ,  H01L2224/0401 ,  H01L2224/11002 ,  H01L2224/16225 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/1421 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/00

Abstract: An apparatus comprises a device layer structure, a device integrated into the device layer structure, an insulating carrier substrate and an insulating layer being continuously positioned between the device layer structure and the insulating carrier substrate, the insulating layer having a thickness which is less than 1/10 of a thickness of the insulating carrier substrate. An apparatus further comprises a device integrated into a device layer structure disposed on an insulating layer, a housing layer disposed on the device layer structure and housing the device, a contact providing an electrical connection between the device and a surface of the housing layer opposed to the device layer structure and a molding material surrounding the housing layer and the insulating layer, the molding material directly abutting on a surface of the insulating layer being opposed to the device layer structure.

Abstract translation: 一种装置包括器件层结构，集成到器件层结构中的器件，绝缘载体衬底和绝缘层，其连续地位于器件层结构和绝缘载体衬底之间，绝缘层的厚度小于1 绝缘载体基板的厚度的1/10。 一种装置还包括集成在设置在绝缘层上的器件层结构中的器件，设置在器件层结构上并容纳该器件的壳体层，提供该器件与壳体层相对的表面之间的电连接的触点 所述器件层结构和围绕所述壳体层和所述绝缘层的模制材料，所述模制材料直接邻接在所述绝缘层的与所述器件层结构相对的表面上。

公开(公告)号：US20080020330A1

公开(公告)日：2008-01-24

申请号：US11771898

申请日：2007-06-29

Applicant: Klaus-Guenter Oppermann ,  Martin Franosch

Inventor： Klaus-Guenter Oppermann ,  Martin Franosch

IPC: G03C5/38

CPC classification number: G03F7/325 ,  G03F7/322 ,  G03F7/40

Abstract: A method for developing a photoresist includes applying a first developer to the photoresist to remove non-cross-linked areas of the photoresist, and applying a second developer to the photoresist to remove remaining non-cross-linked areas of the photoresist, wherein the first developer and the second developer differ in their compositions.

Abstract translation: 用于显影光致抗蚀剂的方法包括将第一显影剂施加到光致抗蚀剂以去除光致抗蚀剂的非交联区域，以及将第二显影剂施加到光致抗蚀剂以除去光致抗蚀剂的剩余非交联区域，其中第一 开发者和第二个开发者的组成不同。

公开(公告)号：US20080017974A1

公开(公告)日：2008-01-24

申请号：US11864448

申请日：2007-09-28

Applicant: MARTIN FRANOSCH ,  Andreas Meckes ,  Winfried Nessler ,  Klaus-Gunter Oppermann

Inventor： MARTIN FRANOSCH ,  Andreas Meckes ,  Winfried Nessler ,  Klaus-Gunter Oppermann

IPC: H01L23/12

CPC classification number: B81C1/00293 ,  B41J2/1603 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1635 ,  B41J2/1639 ,  B41J2/1645 ,  B81B2201/0271 ,  B81C2203/0136 ,  B81C2203/0145 ,  Y10S438/977

Abstract: Apparatus for housing a micromechanical structure, and a method for producing the housing. The apparatus has a substrate having a main side on which the micromechanical structure is formed, a photo-resist material structure surrounding the micromechanical structure to form a cavity together with the substrate between the substrate and the photo-resist material structure, wherein the cavity separates the micromechanical structure and the photo-resist material structure and has an opening, and a closure for closing the opening to close the cavity.

Abstract translation: 用于容纳微机械结构的装置，以及用于制造外壳的方法。 该装置具有基板，其上形成有微机械结构的主侧面，围绕微机械结构的光致抗蚀剂材料结构，与基板和光刻胶材料结构之间的基板一起形成空腔，其中空腔分离 微机械结构和光致抗蚀剂材料结构并具有开口，以及用于封闭开口以封闭空腔的封闭件。

公开(公告)号：US07288435B2

公开(公告)日：2007-10-30

申请号：US10921087

申请日：2004-08-18

Applicant: Robert Aigner ,  Martin Franosch ,  Andreas Meckes ,  Klaus-Guenter Oppermann ,  Marc Strasser

Inventor： Robert Aigner ,  Martin Franosch ,  Andreas Meckes ,  Klaus-Guenter Oppermann ,  Marc Strasser

IPC: H01L21/00 ,  H01L21/50 ,  H01L21/48

CPC classification number: H03H9/1071 ,  H03H9/105

Abstract: In a method for producing a cover for a region of a substrate, first a frame structure is produced in the region of the substrate, and then a cap structure is attached to the frame structure so that the region under the cap structure is covered. Thus, sensitive devices may be protected easily and at low cost from external influences and particularly from a casting material for casting the entire packaged device, which results when a diced chip is cast.

Abstract translation: 在用于制造基板区域的盖的方法中，首先在基板的区域中制造框架结构，然后将盖结构附接到框架结构，使得盖结构下方的区域被覆盖。 因此，敏感装置可以容易地以低成本保护外部影响，特别是用于铸造整个封装装置的铸造材料，这在铸造切割的芯片时产生。

公开(公告)号：US06955950B2

公开(公告)日：2005-10-18

申请号：US10888568

申请日：2004-07-09

Applicant: Robert Aigner ,  Martin Franosch ,  Andreas Meckes ,  Klaus-Günter Oppermann ,  Marc Strasser

Inventor： Robert Aigner ,  Martin Franosch ,  Andreas Meckes ,  Klaus-Günter Oppermann ,  Marc Strasser

IPC: B81B7/00 ,  B81C1/00 ,  H03H3/02 ,  H01L21/44

CPC classification number: B81C1/00293 ,  B81C2203/0136 ,  B81C2203/0145 ,  H03H3/02

Abstract: In a method for generating a protective cover for a device, where a substrate is provided, which comprises the device, first, a sacrificial pattern is generated on the substrate. The sacrificial pattern covers at least an area of the substrate, which comprises the device. Then, a polymer layer is deposited, which comprises at least on sacrificial pattern. Then, an opening will be formed in the polymer layer to expose a portion of the sacrificial pattern. Then, the sacrificial pattern will be removed and the formed opening in the polymer layer is closed.

Abstract translation: 在用于产生包括该装置的基板的装置的保护罩的制造方法中，首先，在基板上产生牺牲图案。 牺牲图案至少覆盖基板的一个区域，该区域包括该装置。 然后沉积聚合物层，其至少包括牺牲图案。 然后，将在聚合物层中形成开口以暴露牺牲图案的一部分。 然后，牺牲图案将被去除并且聚合物层中形成的开口被封闭。