公开(公告)号：US12132085B2

公开(公告)日：2024-10-29

申请号：US18114632

申请日：2023-02-27

Applicant: Resonac Corporation

Inventor： Hiromasa Suo ,  Rimpei Kindaichi

IPC: H01L29/16 ,  H01L21/66 ,  H01L21/67

CPC classification number: H01L29/1608 ,  H01L21/67288 ,  H01L22/12

Abstract: The SiC substrate has a warpage factor F of 300 μm or less, which is obtained from the thickness, the diameter, and a stress at a first outer circumferential end 10 mm inward from an outer circumferential end in the [11-20] direction from a center thereof.

公开(公告)号：US20240342676A1

公开(公告)日：2024-10-17

申请号：US18037594

申请日：2021-07-21

Applicant: Resonac Corporation

Inventor： Yasuhiro IWAMA ,  Maiko IKUSHIMA ,  Kazuki UMEHARA ,  Shuhei MIURA ,  Toshiyuki MAKI ,  Kensho ETO

IPC: B01J8/06 ,  C07C67/055

CPC classification number: B01J8/067 ,  C07C67/055 ,  B01J2208/00044 ,  B01J2208/065

Abstract: Provided is a reactor device in which a fixed bed multi-tubular reactor is used to produce alkenyl acetate through a gas phase catalytic oxidation reaction of a lower olefin, acetic acid, and oxygen, and which enables accurate measurement of the temperature of a catalyst layer in a reaction tube even when a process operation has been carried out for a long time. A fixed bed multi-tubular reactor for producing alkenyl acetate, wherein the fixed bed multi-tubular reactor is equipped with a plurality of reaction tubes to which a raw material gas and a mist of an aqueous solution of an alkali metal acetate are supplied from the upper portion of the fixed bed multi-tubular reactor, a thermometer protection tube inserted into at least one of the plurality of reaction tubes from the lower portion of the fixed bed multi-tubular reactor, and a thermometer inserted into the thermometer protection tube.

公开(公告)号：US20240337934A1

公开(公告)日：2024-10-10

申请号：US18291075

申请日：2021-12-22

Applicant: Resonac Corporation

Inventor： Naoki YAMASHITA ,  Hayato SAWAMOTO ,  Kaho YAMAGUCHI ,  Yasuyuki OYAMA ,  Arisa YAMAKAWA

IPC: G03F7/033 ,  G03F7/105 ,  G03F7/115 ,  H05K3/00 ,  H05K3/28

CPC classification number: G03F7/033 ,  G03F7/105 ,  G03F7/115 ,  H05K3/0082 ,  H05K3/287

Abstract: The present disclosure relates to a photosensitive resin composition for a permanent resist, the photosensitive resin composition including: (A) an acid-modified vinyl group-containing resin; (B) a photopolymerization initiator; and (C) a photopolymerizable compound, in which the photopolymerizable compound includes a photopolymerizable compound having four or more ethylenically unsaturated groups and a photopolymerizable compound having three or fewer ethylenically unsaturated groups.

公开(公告)号：US12110414B2

公开(公告)日：2024-10-08

申请号：US17047391

申请日：2018-04-16

Applicant: Resonac Corporation

Inventor： Hiroyuki Izumi ,  Tatsuya Makino ,  Tomohiko Kotake ,  Satoshi Takayasu ,  Naoyoshi Sato

IPC: C09D5/08 ,  C09D7/20 ,  C09D7/40 ,  C09D7/62 ,  C09D133/04 ,  C09D183/04

CPC classification number: C09D5/084 ,  C09D7/20 ,  C09D7/62 ,  C09D7/70 ,  C09D133/04 ,  C09D183/04

Abstract: A method for suppressing corrosion under insulation includes a step of applying a paste containing aerogel particles and a liquid medium to a target surface to form a coating film. A paste for suppressing corrosion under insulation contains aerogel particles and a liquid medium.

公开(公告)号：US20240317942A1

公开(公告)日：2024-09-26

申请号：US18580392

申请日：2022-07-20

Applicant: Resonac Corporation

Inventor： Yuji HASHIMOTO ,  Norihito NISHIMURA

IPC: C08G75/045 ,  C08F2/48

CPC classification number: C08G75/045 ,  C08F2/48

Abstract: A thiol-containing composition includes polyfunctional secondary thiol compounds (A) and disulfide dimers (B), wherein the polyfunctional secondary thiol compound (A) are each an ester of a polyhydric alcohol with a carboxylic acid having a secondary mercapto group; the disulfide dimers (B) are disulfide dimers of the polyfunctional secondary thiol compounds (A); and the amount of the disulfide dimers (B) is 0.001 to 1.5 parts by mass based on 100 parts by mass of the polyfunctional secondary thiol compounds (A).

公开(公告)号：US20240308148A1

公开(公告)日：2024-09-19

申请号：US18578636

申请日：2022-12-21

Applicant: Resonac Corporation

Inventor： Nobuyuki TAKAHASHI ,  Masatoshi Mori

IPC: B29C65/44 ,  B29C65/34

CPC classification number: B29C65/44 ,  B29C65/3456 ,  B29C65/3468

Abstract: Provided is a method for producing a joined body obtained by joining a base material A, a film containing an amorphous thermoplastic resin, which is at least one of a thermoplastic epoxy resin and a phenoxy resin, as a main component, and a resin B in this order. The method includes a first joining step of joining the base material A and the film by melting and then solidifying the film in a state in which the film is in contact with the base material A, and a second joining step of joining the base material A and the resin B by melting and then solidifying the film in a state in which the film joined to the base material A is in contact with the resin B. The base material A is at least one of a metal and an inorganic substance, an epoxy equivalent of the amorphous thermoplastic resin is 1,600 g/eq. or more, or the amorphous thermoplastic resin does not contain an epoxy group, and a heat of fusion of the amorphous thermoplastic resin is 15 J/g or less.

公开(公告)号：US20240306308A1

公开(公告)日：2024-09-12

申请号：US18650160

申请日：2024-04-30

Applicant: RESONAC CORPORATION

Inventor： Masaya TOBA ,  Kazuhiko KURAFUCHI ,  Takashi MASUKO ,  Kazuyuki MITSUKURA ,  Shinichiro ABE

IPC: H05K3/18 ,  C23C18/16 ,  C23C18/20 ,  C23C18/32 ,  C23C18/38 ,  H05K1/03

CPC classification number: H05K3/181 ,  C23C18/1605 ,  C23C18/165 ,  C23C18/20 ,  C23C18/32 ,  C23C18/38 ,  H05K1/032 ,  H05K2201/068

Abstract: A semiconductor package includes a wiring board and a semiconductor element mounted on the wiring board. The wiring board includes a first insulating material layer having a surface with an arithmetic average roughness Ra of 100 nm or less, a metal wiring provided on the surface of the first insulating material layer, and a second insulating material layer provided to cover the metal wiring. The metal wiring is configured by a metal layer in contact with the surface of the first insulating material layer and a conductive part stacked on a surface of the metal layer, and a nickel content rate of the metal layer is 0.25 to 20% by mass.

公开(公告)号：US20240290439A1

公开(公告)日：2024-08-29

申请号：US18571355

申请日：2022-06-22

Applicant: Resonac Corporation

Inventor： Naoto AONUMA ,  Shimpei TAKEMOTO ,  Takuya MINAMI ,  Kohsuke KAKUDA ,  Yoshishige OKUNO ,  Hiroko TAKASHI

IPC: G16C20/30 ,  G16C20/70

CPC classification number: G16C20/30 ,  G16C20/70

Abstract: A physical property prediction device for predicting a physical property of a compound including: a generation unit configured to generate a first stage trained model, by using, as training data, first stage synthesis information and synthesis result information; a generation unit configured to generate second stage through last stage trained models, by using, as training data, n-th stage (n≥2) synthesis information, n-th stage synthesis result information, and n−1-th stage synthesis result information; a reception unit configured to receive a synthesis information setting for the compound for which the physical property is predicted; a prediction unit configured to predict a physical property value of a product synthesized by the first stage chemical reaction of the compound; a prediction unit configured to repeat, from a second stage chemical reaction to a last stage chemical reaction of the compound, a process of predicting a physical property value of a product synthesized by the n-th stage chemical reaction of the compound; and an output unit configured to output a predicted physical property value.

公开(公告)号：US20240282581A1

公开(公告)日：2024-08-22

申请号：US18569943

申请日：2022-08-29

Applicant: Resonac Corporation ,  SHOWA DENKO MATERIALS CO., LTD.

Inventor： Shogo ARATA ,  Masahiro SAKASHITA ,  Yasuhiro ICHIGE ,  Yousuke HOSHI

IPC: H01L21/306 ,  H01L21/321

CPC classification number: H01L21/30625 ,  H01L21/3212

Abstract: A polishing liquid for polishing a member to be polished, the polishing liquid containing abrasive grains containing cerium oxide, in which the member to be polished contains a resin and particles containing a silicon compound. A polishing method including polishing a member to be polished containing a resin and particles containing a silicon compound by using the polishing liquid. A method for manufacturing a component, including obtaining a component by using a polished member polished by the polishing method. A method for manufacturing a semiconductor component, including obtaining a semiconductor component by using a polished member polished by the above-described polishing method.

公开(公告)号：US20240274671A1

公开(公告)日：2024-08-15

申请号：US18646141

申请日：2024-04-25

Applicant: Resonac Corporation

Inventor： Naoto ISHIBASHI ,  Keisuke FUKADA

IPC: H01L29/36 ,  C30B25/14 ,  C30B25/16 ,  C30B29/36 ,  H01L21/02 ,  H01L29/16

CPC classification number: H01L29/365 ,  C30B25/14 ,  C30B25/165 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/02584 ,  H01L21/0262 ,  H01L29/1608

Abstract: A SiC epitaxial wafer of the present invention includes a SiC single crystal substrate, and a high concentration layer that is provided on the SiC single crystal substrate and has an average value of an n-type doping concentration of 1×1018/cm3 or more and 1×1019/cm3 or less, and in-plane uniformity of the doping concentration of 30% or less.