公开(公告)号：US09708713B2

公开(公告)日：2017-07-18

申请号：US14282824

申请日：2014-05-20

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun ,  Biraja Kanungo ,  Tom Cho ,  Ying Zhang

IPC: C23C24/04 ,  H01J37/32

CPC classification number: H01J37/32807 ,  C23C24/04 ,  H01J37/3244 ,  Y10T428/24413

Abstract: A method for coating a component for use in a semiconductor chamber for plasma etching includes providing the component and loading the component in a deposition chamber. A pressure in the deposition chamber is reduced to below atmospheric pressure. A coating is deposited on the component by spraying an aerosol comprising a suspension of a first type of metal oxide nanoparticle and a second type of metal oxide nanoparticle onto the component at approximately room temperature.

公开(公告)号：US20170140900A1

公开(公告)日：2017-05-18

申请号：US14940539

申请日：2015-11-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Leonid Dorf ,  Shahid Rauf ,  Vladimir Knyazik ,  Philip A. Kraus ,  Ying Zhang

IPC: H01J37/32

CPC classification number: H01J37/32422 ,  H01J37/06 ,  H01J37/3211 ,  H01J37/3233 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32807

Abstract: To generate a plasma for processing a workpiece, an electron beam is introduced into a plasma reactor chamber by radial injection using an annular electron beam source distributed around the circular periphery of the chamber to provide azimuthal uniformity. The electron beam propagation path is tilted upwardly away from the workpiece, either by tilting the electron beam source or by a magnetic field. In other embodiments, there are plural opposing electron beams from linear electron beam sources directed toward the center of the plasma reactor chamber.

公开(公告)号：US20170133207A1

公开(公告)日：2017-05-11

申请号：US15413192

申请日：2017-01-23

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun ,  Biraja P. Kanungo ,  Vahid Firouzdor ,  Ying Zhang

IPC: H01J37/32 ,  C23C14/00 ,  C23C14/08 ,  H01L21/67

CPC classification number: H01L21/67023 ,  B65D43/02 ,  C23C4/01 ,  C23C4/04 ,  C23C4/10 ,  C23C4/11 ,  C23C4/12 ,  C23C4/134 ,  C23C4/14 ,  C23C4/16 ,  C23C14/0015 ,  C23C14/0021 ,  C23C14/0031 ,  C23C14/0036 ,  C23C14/0052 ,  C23C14/0084 ,  C23C14/0094 ,  C23C14/08 ,  C23C14/081 ,  C23C14/083 ,  C23C14/088 ,  H01J37/32477 ,  H01J37/32495 ,  H01J37/32513 ,  H01J2237/334 ,  H01L21/67063 ,  H01L21/67069 ,  H01L21/6708 ,  H01L21/67086 ,  Y10T428/131 ,  Y10T428/1317 ,  Y10T428/139 ,  Y10T428/1393

Abstract: A component for a semiconductor processing chamber includes a ceramic body having at least one surface with a first average surface roughness of approximately 8-16 micro-inches. The component further includes a conformal protective layer on at least one surface of the ceramic body, wherein the conformal protective layer is a plasma resistant rare earth oxide film having a substantially uniform thickness of less than 300 μm over the at least one surface and having a second average surface roughness of below 10 micro-inches, wherein the second average surface roughness is equal to or less than the first average surface roughness.

公开(公告)号：US09530637B2

公开(公告)日：2016-12-27

申请号：US14875013

申请日：2015-10-05

Applicant: Applied Materials, Inc.

Inventor： Ying Zhang ,  Hua Chung

IPC: H01L21/20 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/311 ,  H01L21/8258

CPC classification number: H01L21/02507 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/3065 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/8258

Abstract: Methods and apparatus for forming FinFET structures are provided. Selective etching and deposition processes described herein may provide for FinFET manufacturing without the utilization of multiple patterning processes. Embodiments described herein also provide for fin material manufacturing methods for transitioning from silicon to III-V materials while maintaining acceptable crystal lattice orientations of the various materials utilized. Further embodiments provide etching apparatus which may be utilized to perform the methods described herein.

Abstract translation: 提供了用于形成FinFET结构的方法和装置。 本文所述的选择性蚀刻和沉积工艺可以提供FinFET制造而不利用多个图案化工艺。 本文描述的实施例还提供了用于从硅转变为III-V材料的翅片材料制造方法，同时保持所使用的各种材料的可接受的晶格取向。 另外的实施例提供可用于执行本文所述方法的蚀刻装置。

公开(公告)号：US20150024155A1

公开(公告)日：2015-01-22

申请号：US14032098

申请日：2013-09-19

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun ,  Biraja P. Kanungo ,  Vahid Firouzdor ,  Ying Zhang

IPC: H01J37/32

CPC classification number: H01J37/32642 ,  C23C14/0015 ,  C23C14/0031 ,  C23C14/08 ,  H01J37/32477 ,  H01J37/32495 ,  Y10T428/1317

Abstract: A method of manufacturing an article comprises providing a ring for an etch reactor. Ion assisted deposition (IAD) is then performed to deposit a protective layer on at least one surface of the ring, wherein the protective layer is a plasma resistant rare earth oxide film having a thickness of less than 300 μm and an average surface roughness of less than 6 micro-inches.

Abstract translation: 制造制品的方法包括提供用于蚀刻反应器的环。 然后进行离子辅助沉积（IAD）以在环的至少一个表面上沉积保护层，其中保护层是厚度小于300μm，平均表面粗糙度较小的耐等离子体稀土氧化物膜 超过6微英寸。

公开(公告)号：US20140339980A1

公开(公告)日：2014-11-20

申请号：US14307945

申请日：2014-06-18

Applicant: APPLIED MATERIALS, INC.

Inventor： Ming-Feng Wu ,  Leonid Dorf ,  Shahid Rauf ,  Ying Zhang ,  Kenneth S. Collins ,  Hamid Tavassoli ,  Kartik Ramaswamy ,  Steven Lane

IPC: H01J37/32

CPC classification number: H01J37/32669 ,  H01J37/32082 ,  H01J37/3233 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32458

Abstract: In a plasma reactor for processing a workpiece, an electron beam is employed as the plasma source, and a remote radical source is incorporated with the process chamber.

Abstract translation: 在用于处理工件的等离子体反应器中，使用电子束作为等离子体源，并且将远程自由基源与处理室结合。

公开(公告)号：US12195839B2

公开(公告)日：2025-01-14

申请号：US18101273

申请日：2023-01-25

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun ,  Vahid Firouzdor ,  Biraja Prasad Kanungo ,  Tom K Cho ,  Vedapuram S. Achutharaman ,  Ying Zhang

IPC: C23C14/08 ,  C04B35/00 ,  C04B35/505 ,  C04B35/622 ,  C04B41/00 ,  C04B41/45 ,  C04B41/50 ,  C04B41/52 ,  C04B41/87 ,  C04B41/89 ,  C23C14/46 ,  C23C14/58 ,  H01J37/32

Abstract: A method includes performing ion beam sputtering with ion assisted deposition to deposit a protective layer on a surface of a body. The protective layer is a plasma resistant rare earth-containing film of a thickness less than 1000 μm. The porosity of the protective layer is below 1%. The plasma resistant rare earth-containing film consists of 40 mol % to less than 100 mol % of Y2O3, over 0 mol % to 60 mol % of ZrO2, and 0 mol % to 9 mol % of Al2O3.

公开(公告)号：US11566318B2

公开(公告)日：2023-01-31

申请号：US15712094

申请日：2017-09-21

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun ,  Vahid Firouzdor ,  Biraja Prasad Kanungo ,  Tom K. Cho ,  Vedapuram S. Achutharaman ,  Ying Zhang

IPC: C04B41/89 ,  C04B41/00 ,  C04B41/52 ,  C04B35/505 ,  C04B35/622 ,  C04B41/45 ,  C04B35/00 ,  C23C14/08 ,  C04B41/50 ,  C23C14/46 ,  C23C14/58 ,  H01J37/32 ,  C04B41/87

Abstract: An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 μm, wherein the plasma resistant rare earth oxide film is selected from a group consisting of an Er—Y composition, an Er—Al—Y composition, an Er—Y—Zr composition, and an Er—Al composition.

公开(公告)号：US20210343592A1

公开(公告)日：2021-11-04

申请号：US17375122

申请日：2021-07-14

Applicant: Applied Materials, Inc.

Inventor： Yung-Chen Lin ,  Qingjun Zhou ,  Ying Zhang ,  Ho-yung David Hwang

IPC: H01L21/768 ,  H01L21/027 ,  H01L21/033

Abstract: Methods of forming and processing semiconductor devices which utilize the selective etching of aluminum oxide over silicon oxide, silicon nitride, aluminum oxide or zirconium oxide are described. Certain embodiments relate to the formation of self-aligned contacts for metal gate applications.

公开(公告)号：US20210118703A1

公开(公告)日：2021-04-22

申请号：US17137076

申请日：2020-12-29

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun ,  Biraja P. Kanungo ,  Vahid Firouzdor ,  Ying Zhang

IPC: H01L21/67 ,  B65D43/02 ,  C23C4/11 ,  C23C4/12 ,  C23C4/04 ,  C23C4/10 ,  C23C4/01 ,  C23C14/00 ,  C23C4/134 ,  C23C4/14 ,  C23C4/16 ,  C23C14/08 ,  H01J37/32

Abstract: A component for a processing chamber includes a ceramic body having at least one surface with a first average surface roughness. The component further includes a conformal protective layer on at least one surface of the ceramic body, wherein the conformal protective layer is a plasma resistant rare earth oxide film having a substantially uniform thickness of less than 300 μm over the at least one surface and having a second average surface roughness that is less than the first average surface roughness.