公开(公告)号：US20240222111A1

公开(公告)日：2024-07-04

申请号：US18396357

申请日：2023-12-26

Applicant: ASM IP Holding B.V.

Inventor： Viraj Madhiwala ,  Eva E. Tois ,  Daniele Chiappe ,  Marko Tuominen

IPC: H01L21/02

CPC classification number: H01L21/0228 ,  H01L21/02046 ,  H01L21/0206 ,  H01L21/02178 ,  H01L21/02205 ,  H01L21/02304 ,  H01L21/02312

Abstract: Methods for selectively forming a dielectric layer on a metallic surface relative to a dielectric surface are disclosed. The disclosed selective formation methods include selective passivation processes, and selective deposition processes.

公开(公告)号：US20230386934A1

公开(公告)日：2023-11-30

申请号：US18322286

申请日：2023-05-23

Applicant: ASM IP Holding, B.V.

Inventor： Shaoren Deng ,  Marko Tuominen ,  Vincent Vandalon ,  Eva E. Tois ,  Viraj Madhiwala ,  YongGyu Han ,  Daniele Chiappe ,  Michael Givens ,  Ren-Jie Chang ,  Giuseppe Alessio Verni ,  Timothee Blanquart ,  René Henricus Jozef Vervuurt

IPC: H01L21/8238

CPC classification number: H01L21/823807

Abstract: Disclosed are methods and related systems for forming a structure. Embodiments of presently described methods comprise employing a sacrificial gap filling fluid for selectively forming a first layer on one or more first surfaces in a lower part of a gap, and forming a second layer on one or more second surfaces in an upper part of a gap.

公开(公告)号：US11643720B2

公开(公告)日：2023-05-09

申请号：US17216249

申请日：2021-03-29

Applicant: ASM IP Holding B.V.

Inventor： Andrea Illiberi ,  Giuseppe Alessio Verni ,  Shaoren Deng ,  Daniele Chiappe ,  Eva Tois ,  Marko Tuominen ,  Michael Givens

IPC: C23C16/40 ,  C23C16/455 ,  B01J31/12

CPC classification number: C23C16/401 ,  B01J31/122 ,  C23C16/45534 ,  C23C16/45553

Abstract: Methods for selective deposition of silicon oxide films on metal or metallic surfaces relative to dielectric surfaces are provided. A dielectric surface of a substrate may be selectively passivated relative to a metal or metallic surface, such as by exposing the substrate to a silylating agent. Silicon oxide is then selectively deposited on the metal or metallic surface relative to the passivated oxide surface by contacting the metal surface with a metal catalyst and a silicon precursor comprising a silanol.

公开(公告)号：US20230140812A1

公开(公告)日：2023-05-04

申请号：US18050142

申请日：2022-10-27

Applicant: ASM IP Holding, B.V.

Inventor： Daniele Chiappe ,  Eva Tois ,  Viraj Madhiwala ,  Marko Tuominen ,  Anirudhan Chandrasekaran ,  Andrea Illiberi ,  Shaoren Deng ,  Charles Dezelah ,  Vincent Vandalon ,  YongGyu Han ,  Michael Givens

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/40 ,  C23C16/02

Abstract: The present disclosure relates to methods and apparatuses for selectively depositing silicon and oxygen-comprising material on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process, the method comprising providing a substrate in a reaction chamber; providing a metal or metalloid catalyst to the reaction chamber in a vapor phase; providing a silicon precursor comprising an alkoxy silane compound into the reaction chamber in a vapor phase; and providing an oxygen precursor comprising oxygen and hydrogen into the reaction chamber in vapor phase to form silicon and oxygen-comprising material on the first surface. The disclosure further relates to vapor deposition assemblies.

公开(公告)号：US20210301392A1

公开(公告)日：2021-09-30

申请号：US17216466

申请日：2021-03-29

Applicant: ASM IP Holding B.V.

Inventor： Andrea Illiberi ,  Giuseppe Alessio Verni ,  Shaoren Deng ,  Daniele Chiappe ,  Eva Tois ,  Marko Tuominen ,  Michael Givens

IPC: C23C16/04 ,  B01J21/02 ,  C23C16/40 ,  C23C22/77 ,  C23C22/82

Abstract: Methods for selective deposition of silicon oxide films on dielectric surfaces relative to metal surfaces are provided. A metal surface of a substrate may be selectively passivated relative to the dielectric surface, such as with a polyimide layer or thiol SAM. Silicon oxide is selectively deposited on the dielectric surface relative to the passivated metal surface by contacting the dielectric surface with a metal catalyst and a silicon precursor comprising a silanol.