公开(公告)号：US12243747B2

公开(公告)日：2025-03-04

申请号：US17235985

申请日：2021-04-21

Applicant: ASM IP Holding B.V.

Inventor： Petro Deminskyi ,  Charles Dezelah ,  Jiyeon Kim ,  Giuseppe Alessio Verni ,  Maart Van Druenen ,  Qi Xie ,  Petri Räisänen

IPC: H01L21/28 ,  C23C16/38 ,  C23C16/455 ,  C23C16/50 ,  H01L29/49

Abstract: Methods and systems for depositing a layer, comprising one or more of vanadium boride and vanadium phosphide, onto a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a deposition process. The deposition process can include providing a vanadium precursor to the reaction chamber and separately providing a reactant to the reaction chamber. Exemplary structures can include field effect transistor structures, such as gate all around structures. The layer comprising one or more of vanadium boride and vanadium phosphide can be used, for example, as barrier layers or liners, as work function layers, as dipole shifter layers, or the like.

公开(公告)号：US12159788B2

公开(公告)日：2024-12-03

申请号：US17546186

申请日：2021-12-09

Applicant: ASM IP Holding B.V.

Inventor： Maart van Druenen ,  Charles Dezelah ,  Qi Xie ,  Petro Deminskyi ,  Giuseppe Alessio Verni ,  Ren-Jie Chang ,  Lifu Chen

IPC: H01L21/28 ,  C23C16/32 ,  H01L29/40 ,  H01L29/49

Abstract: Methods and systems for depositing rare earth metal carbide containing layers on a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process such as an atomic layer deposition process for depositing a rare earth metal carbide containing layer onto a surface of the substrate.

公开(公告)号：US20240234483A9

公开(公告)日：2024-07-11

申请号：US18491779

申请日：2023-10-22

Applicant: ASM IP Holding B.V.

Inventor： Alessandra Leonhardt ,  Michael Eugene Givens ,  Giuseppe Alessio Verni ,  Qi Xie

IPC: H10B12/10

CPC classification number: H01L28/75

Abstract: Methods of processing a substrate and related structures and systems. Described methods comprise forming a distal dipole layer on to a distal material layer; forming a high-k dielectric on the distal dipole layer; and, forming a proximal dipole layer on the high-k dielectric.

公开(公告)号：US11885013B2

公开(公告)日：2024-01-30

申请号：US17113242

申请日：2020-12-07

Applicant: ASM IP Holding B.V.

Inventor： Giuseppe Alessio Verni ,  Qi Xie ,  Henri Jussila ,  Charles Dezelah ,  Jiyeon Kim ,  Eric James Shero ,  Paul Ma

IPC: C23C16/34 ,  C23C16/455 ,  H01L29/43 ,  C23C16/52

CPC classification number: C23C16/34 ,  C23C16/45527 ,  C23C16/45544 ,  C23C16/45553 ,  C23C16/52 ,  H01L29/43

Abstract: Methods and systems for depositing vanadium nitride layers onto a surface of the substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a vanadium nitride layer onto a surface of the substrate. The cyclical deposition process can include providing a vanadium halide precursor to the reaction chamber and separately providing a nitrogen reactant to the reaction chamber. The cyclical deposition process may desirably be a thermal cyclical deposition process.

公开(公告)号：US20240006176A1

公开(公告)日：2024-01-04

申请号：US18214656

申请日：2023-06-27

Applicant: ASM IP Holding B.V.

Inventor： Lucas Petersen Barbosa Lima ,  Charles Dezelah ,  Rami Khazaka ,  Qi Xie ,  Giuseppe Alessio Verni

IPC: H01L21/02 ,  C30B29/52 ,  C30B25/02

CPC classification number: H01L21/0262 ,  H01L21/02532 ,  C30B25/02 ,  C30B29/52 ,  H01L21/02579

Abstract: Methods and systems for forming a p-type doped silicon germanium layer. The p-type doped silicon germanium layer can include silicon, germanium, gallium, and, in at least some cases, indium.

公开(公告)号：US20230015690A1

公开(公告)日：2023-01-19

申请号：US17812488

申请日：2022-07-14

Applicant: ASM IP Holding, B.V.

Inventor： Maart van Druenen ,  Qi Xie ,  Charles Dezelah ,  Petro Deminskyi ,  Lifu Chen ,  Giuseppe Alessio Verni ,  Ren-Jie Chang

IPC: C23C16/14 ,  C23C16/18 ,  C23C16/44

Abstract: Disclosed are methods and systems for depositing layers comprising a transition metal and a group 13 element. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

公开(公告)号：US20250109492A1

公开(公告)日：2025-04-03

申请号：US18900427

申请日：2024-09-27

Applicant: ASM IP Holding B.V.

Inventor： Patricio Eduardo Romero ,  Charles Dezelah ,  Michael Eugene Givens ,  Giuseppe Alessio Verni

IPC: C23C16/30 ,  C23C16/44

Abstract: A method, system and apparatus are disclosed for depositing a threshold voltage shifting layer comprising an oxygen-free metal sulfide on a substrate, wherein the depositing further comprises, providing a substrate having a surface within a reaction chamber, a) providing an oxygen-free precursor comprising a metal to the reaction chamber to contact the surface, b) providing an oxygen-free, sulfur-containing reactant to the reaction chamber to contact the surface, c) purging the reaction chamber and repeating operations a), b) or c) or any combination thereof until the threshold voltage shifting layer of a predetermined thickness is deposited on the surface.

公开(公告)号：US20250092513A1

公开(公告)日：2025-03-20

申请号：US18970001

申请日：2024-12-05

Applicant: ASM IP Holding B.V.

Inventor： Eric Christopher Stevens ,  Bhushan Zope ,  Shankar Swaminathan ,  Charles Dezelah ,  Qi Xie ,  Giuseppe Alessio Verni

IPC: C23C16/34 ,  C23C16/02 ,  C23C16/08 ,  C23C16/455 ,  G11C5/06 ,  H01L21/28 ,  H01L29/06 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H10B12/00

Abstract: Methods for depositing a molybdenum nitride film on a surface of a substrate are disclosed. The methods may include: providing a substrate into a reaction chamber; and depositing a molybdenum nitride film directly on the surface of the substrate by performing one or more unit deposition cycles of cyclical deposition process, wherein a unit deposition cycle may include, contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor, and contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor. Semiconductor device structures including a molybdenum nitride film are also disclosed.

公开(公告)号：US12031206B2

公开(公告)日：2024-07-09

申请号：US17812488

申请日：2022-07-14

Applicant: ASM IP Holding, B.V.

Inventor： Maart van Druenen ,  Qi Xie ,  Charles Dezelah ,  Petro Deminskyi ,  Lifu Chen ,  Giuseppe Alessio Verni ,  Ren-Jie Chang

IPC: C23C16/14 ,  C23C16/18 ,  C23C16/44

CPC classification number: C23C16/14 ,  C23C16/18 ,  C23C16/4408

Abstract: Disclosed are methods and systems for depositing layers comprising a transition metal and a group 13 element. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

公开(公告)号：US20240177992A1

公开(公告)日：2024-05-30

申请号：US18519172

申请日：2023-11-27

Applicant: ASM IP Holding B.V.

Inventor： Andrea Illiberi ,  Shaoren Deng ,  Giuseppe Alessio Verni ,  Daria Nevstrueva ,  Marko Tuominen ,  Charles Dezelah ,  Daniele Chiappe ,  Eva Elisabeth Tois ,  Viraj Madhiwala ,  Michael Givens

IPC: H01L21/02

CPC classification number: H01L21/02337 ,  H01L21/02118 ,  H01L21/02205 ,  H01L21/0228

Abstract: The disclosure relates to methods of forming organic polymers comprising polyimide and layers comprising the same and to methods of reducing polyamic acid content of an organic polymer. The embodiments of the disclosure further relate to methods of fabricating semiconductor devices, to selectively depositing a material on a surface of a semiconductor substrate and to semiconductor processing assemblies. The methods are characterized by contacting a polyimide-containing material, such as a layer, with a modifying agent that increases the proportion of polyimide in the organic polymer material.