公开(公告)号：US11728175B2

公开(公告)日：2023-08-15

申请号：US17130902

申请日：2020-12-22

Applicant: ASM IP Holding B.V.

Inventor： Eva E. Tois ,  Hidemi Suemori ,  Viljami J. Pore ,  Suvi P. Haukka ,  Varun Sharma ,  Jan Willem Maes ,  Delphine Longrie ,  Krzysztof Kachel

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/033 ,  H01L21/3213 ,  H01L21/32 ,  C23C16/04 ,  C23C16/455 ,  C23C16/56 ,  H01L21/768

CPC classification number: H01L21/31144 ,  C23C16/04 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/0228 ,  H01L21/02118 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/0337 ,  H01L21/31138 ,  H01L21/32 ,  H01L21/32139 ,  H01L21/76834

Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity. Masking applications employing selective organic films are provided. Post-deposition modification of the organic films, such as metallic infiltration and/or carbon removal, is also disclosed.

公开(公告)号：US20230011277A1

公开(公告)日：2023-01-12

申请号：US17808741

申请日：2022-06-24

Applicant: ASM IP HOLDING B.V.

Inventor： Eva E. Tois ,  Hidemi Suemori ,  Viljami J. Pore ,  Suvi P. Haukka ,  Varun Sharma

IPC: H01L21/285 ,  C23C16/56 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/768 ,  B05D1/00 ,  C23C16/04 ,  C23C16/455

Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity.

公开(公告)号：US20220208542A1

公开(公告)日：2022-06-30

申请号：US17470177

申请日：2021-09-09

Applicant: ASM IP HOLDING B.V.

Inventor： Jan Willem Hub Maes ,  Michael Eugene Givens ,  Suvi P. Haukka ,  Vamsi Paruchuri ,  Ivo Johannes Raaijmakers ,  Shaoren Deng ,  Andrea Illiberi ,  Eva E. Tois ,  Delphine Longrie

IPC: H01L21/02 ,  H01L21/324 ,  H01L21/67

Abstract: Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.

公开(公告)号：US10453701B2

公开(公告)日：2019-10-22

申请号：US15486124

申请日：2017-04-12

Applicant: ASM IP Holding B.V.

Inventor： Eva E. Tois ,  Hidemi Suemori ,  Viljami J. Pore ,  Suvi P. Haukka ,  Varun Sharma ,  Jan Willem Maes ,  Delphine Longrie ,  Krzysztof Kachel

IPC: H01L21/311 ,  H01L21/768 ,  H01L21/02 ,  C23C16/04 ,  C23C16/455 ,  C23C16/56 ,  H01L21/033 ,  H01L21/32 ,  H01L21/3213

Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity. Masking applications employing selective organic films are provided. Post-deposition modification of the organic films, such as metallic infiltration and/or carbon removal, is also disclosed.

公开(公告)号：US12300505B2

公开(公告)日：2025-05-13

申请号：US18340261

申请日：2023-06-23

Applicant: ASM IP HOLDING B.V.

Inventor： Eva E. Tois ,  Hidemi Suemori ,  Viljami J. Pore ,  Suvi P. Haukka ,  Varun Sharma ,  Jan Willem Maes ,  Delphine Longrie ,  Krzysztof Kachel

IPC: H01L21/311 ,  C23C16/04 ,  C23C16/455 ,  C23C16/56 ,  H01L21/02 ,  H01L21/033 ,  H01L21/32 ,  H01L21/3213 ,  H01L21/768

Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity. Masking applications employing selective organic films are provided. Post-deposition modification of the organic films, such as metallic infiltration and/or carbon removal, is also disclosed.

公开(公告)号：US20250092509A1

公开(公告)日：2025-03-20

申请号：US18889069

申请日：2024-09-18

Applicant: ASM IP Holding B.V.

Inventor： Bhagyesh Purohit ,  Saima Alli ,  Eva E. Tois ,  Marko Tuominen ,  Charles Dezelah ,  Vincent Vandalon ,  Adam Vianna ,  Krzysztof Kamil Kachel ,  Eric James Shero ,  Yi Cheng Zhang ,  Anirudhan Chandrasekaran

IPC: C23C16/04 ,  C23C16/455 ,  C23C16/56 ,  H01L21/02

Abstract: The disclosure relates to methods and processing assemblies for selectively depositing organic polymer material on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process is disclosed. The method comprises providing a substrate in a reaction chamber, providing a first vapor-phase organic reactant into the reaction chamber and providing a second vapor-phase organic reactant into the reaction chamber. In the method, the first and second vapor-phase organic reactants form the organic polymer material selectively on the first surface; and the first vapor-phase reactant comprises a cyclic compound comprising at least two primary amine groups.

公开(公告)号：US20240218500A1

公开(公告)日：2024-07-04

申请号：US18397722

申请日：2023-12-27

Applicant: ASM IP Holding B.V.

Inventor： Anirudhan Chandrasekaran ,  Daniele Chiappe ,  Eva E. Tois ,  Viraj Madhiwala ,  Andrea Illiberi ,  Shaoren Deng

IPC: C23C16/04 ,  C23C16/18

CPC classification number: C23C16/04 ,  C23C16/18

Abstract: Methods for forming selective passivation layers on a first dielectric surface relative to a second metallic surface are disclosed. Methods for utilizing selective passivation layers for depositing target films as also disclosed. Exemplary structures that include selective passivation layers are further disclosed.

公开(公告)号：US11739422B2

公开(公告)日：2023-08-29

申请号：US17807920

申请日：2022-06-21

Applicant: ASM IP HOLDING B.V.

Inventor： Varun Sharma ,  Eva E. Tois

IPC: C23C16/04 ,  C23C16/40 ,  C23C16/455 ,  C23C16/44 ,  C23C16/18 ,  H01L23/31 ,  H01L21/02 ,  C23C16/02 ,  H01L21/321 ,  H01L21/32

CPC classification number: C23C16/45525 ,  C23C16/0272 ,  C23C16/042 ,  C23C16/18 ,  C23C16/405 ,  C23C16/4404 ,  H01L21/0228 ,  H01L21/02137 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/321 ,  H01L23/3171 ,  H01L21/32

Abstract: Passivation layers to inhibit vapor deposition can be used on reactor surfaces to minimize deposits while depositing on a substrate housed therein, or on particular substrate surfaces, such as metallic surfaces on semiconductor substrates to facilitate selective deposition on adjacent dielectric surfaces. Passivation agents that are smaller than typical self-assembled monolayer precursors can have hydrophobic or non-reactive ends and facilitate more dense passivation layers more quickly than self-assembled monolayers, particularly over complex three-dimensional structures.

公开(公告)号：US20220367173A1

公开(公告)日：2022-11-17

申请号：US17814161

申请日：2022-07-21

Applicant: ASM IP HOLDING B.V.

Inventor： Suvi P. Haukka ,  Elina Färm ,  Raija H. Matero ,  Eva E. Tois ,  Hidemi Suemori ,  Antti Juhani Niskanen ,  Sung-Hoon Jung ,  Petri Räisänen

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/40 ,  C23C16/455

Abstract: Methods are provided herein for deposition of oxide films. Oxide films may be deposited, including selective deposition of oxide thin films on a first surface of a substrate relative to a second, different surface of the same substrate. For example, an oxide thin film such as an insulating metal oxide thin film may be selectively deposited on a first surface of a substrate relative to a second, different surface of the same substrate. The second, different surface may be an organic passivation layer.

公开(公告)号：US11501966B2

公开(公告)日：2022-11-15

申请号：US17113383

申请日：2020-12-07

Applicant: ASM IP HOLDING B.V.

Inventor： Eva E. Tois ,  Viljami J. Pore

IPC: H01L21/02 ,  C23C16/455 ,  H01L21/3105 ,  C23C16/40

Abstract: Methods and systems for selectively depositing dielectric films on a first surface of a substrate relative to a passivation layer previously deposited on a second surface are provided. The methods can include at least one cyclical deposition process used to deposit material on the first surface while the passivation layer is removed, thereby preventing deposition over the passivation layer.