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    REACTIVE CURING PROCESS FOR SEMICONDUCTOR SUBSTRATES
    21.
    发明申请
    REACTIVE CURING PROCESS FOR SEMICONDUCTOR SUBSTRATES 有权
    半导体基板的反应固化过程

    公开(公告)号：US20150357184A1

    公开(公告)日：2015-12-10

    申请号：US14718517

    申请日：2015-05-21

    Applicant: ASM IP Holding B.V.

    Inventor： Bert Jongbloed ,  Dieter Pierreux ,  Cornelius A. van der Jeugd ,  Herbert Terhorst ,  Lucian Jdira ,  Radko G. Bankras ,  Theodorus G.M. Oosterlaken

    IPC: H01L21/02

    CPC classification number: H01L21/02337 ,  C23C16/402 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02233 ,  H01L21/02274

    Abstract: In some embodiments, a reactive curing process may be performed by exposing a semiconductor substrate in a process chamber to an ambient containing hydrogen peroxide, with the pressure in the process chamber at about 300 Torr or less. In some embodiments, the residence time of hydrogen peroxide molecules in the process chamber is about five minutes or less. The curing process temperature may be set at about 500° C. or less. The curing process may be applied to cure flowable dielectric materials and may provide highly uniform curing results, such as across a batch of semiconductor substrates cured in a batch process chamber.

    Abstract translation: 在一些实施方案中，反应性固化方法可以通过将处理室中的半导体衬底暴露于含有过氧化氢的环境中，其中处理室中的压力为约300托或更小。 在一些实施方案中，过氧化氢分子在处理室中的停留时间为约5分钟或更短。 固化过程温度可以设定在约500℃或更低。 固化过程可用于固化可流动介电材料，并且可以提供高度均匀的固化结果，例如在批处理室中固化的一批半导体衬底。

    CHEMICAL VAPOR DEPOSITION FURNACE WITH A CLEANING GAS SYSTEM TO PROVIDE A CLEANING GAS
    22.
    发明申请
    CHEMICAL VAPOR DEPOSITION FURNACE WITH A CLEANING GAS SYSTEM TO PROVIDE A CLEANING GAS 有权

    公开(公告)号：US20240392435A1

    公开(公告)日：2024-11-28

    申请号：US18790702

    申请日：2024-07-31

    Applicant: ASM IP Holding B.V.

    Inventor： Dieter Pierreux ,  Theodorus G.M. Oosterlaken ,  Herbert Terhorst ,  Lucian Jdira ,  Bert Jongbloed

    IPC: C23C16/44 ,  C23C16/34 ,  C23C16/455 ,  C23C16/458 ,  C23C16/52

    Abstract: A chemical vapor deposition furnace for depositing silicon nitride films is disclosed. The furnace includes a process chamber elongated in a substantially vertical direction and a wafer boat for supporting a plurality of wafers in the process chamber. A process gas injector inside the process chamber is provided with vertically spaced gas injection holes to provide gas introduced at a feed end in an interior of the process gas injector to the process chamber. A valve system connected to the feed end of the process gas injector is being constructed and arranged to connect a source of a silicon precursor and a nitrogen precursor to the feed end for depositing silicon nitride layers. The valve system may connect the feed end of the process gas injector to a cleaning gas system to provide a cleaning gas to remove silicon nitride from the process gas injector and/or the process chamber.

    SUBSTRATE PROCESSING APPARATUS WITH AN INJECTOR
    24.
    发明申请
    SUBSTRATE PROCESSING APPARATUS WITH AN INJECTOR 有权

    公开(公告)号：US20220162751A1

    公开(公告)日：2022-05-26

    申请号：US17530161

    申请日：2021-11-18

    Applicant: ASM IP Holding B.V.

    Inventor： Kornelius Haanstra ,  Lucian C. Jdira ,  Chris G.M. de Ridder ,  Robin Roelofs ,  Werner Knaepen ,  Herbert Terhorst

    IPC: C23C16/455 ,  H01L21/673 ,  H01L21/687 ,  C23C16/458

    Abstract: A substrate processing apparatus having a tube, a closed liner lining the interior surface of the tube, a plurality of gas injectors to provide a gas to an inner space of the liner, and, a gas exhaust duct to remove gas from the inner space is disclosed. The liner may have a substantially cylindrical wall delimited by a liner opening at a lower end and being substantially closed for gases above the liner opening. The apparatus may have a boat constructed and arranged moveable into the inner space via the liner opening and provided with a plurality of substrate holders for holding a plurality of substrates over a substrate support length in the inner space. Each of the gas injectors may have a single exit opening at the top and the exit openings of the plurality of injectors are substantially equally divided over the substrate support length.

    SUBSTRATE SUSCEPTOR USING EDGE PURGING
    25.
    发明申请
    SUBSTRATE SUSCEPTOR USING EDGE PURGING 审中-公开

    公开(公告)号：US20200373187A1

    公开(公告)日：2020-11-26

    申请号：US16875088

    申请日：2020-05-15

    Applicant: ASM IP HOLDING B.V.

    Inventor： Raj Singu ,  Todd Robert Dunn ,  Carl Louis White ,  Herbert Terhorst ,  Eric James Shero ,  Bhushan Zope

    IPC: H01L21/683 ,  B25B11/00

    Abstract: A workpiece susceptor body can include a front face configured to support a workpiece, a back face opposite the front face, a workpiece contact zone at least partially forming a support boundary on an inner portion of the front face, and a plurality of axial channels disposed within the susceptor body. The workpiece contact zone can be disposed radially inward of an outer edge of a workpiece positioned on the front face in a processing configuration. Each of the plurality of axial channels may connect to corresponding openings extending into an outer portion of the front face. Each of the openings may be disposed radially outward of the workpiece contact zone of the susceptor body.

    Semiconductor processing reactor and components thereof
    26.
    发明授权
    Semiconductor processing reactor and components thereof 有权

    公开(公告)号：US10480072B2

    公开(公告)日：2019-11-19

    申请号：US15182504

    申请日：2016-06-14

    Applicant: ASM IP HOLDING, B.V.

    Inventor： Eric James Shero ,  Mohith E. Verghese ,  Carl Louis White ,  Herbert Terhorst ,  Dan Maurice

    IPC: C23C16/455 ,  H01L21/02

    Abstract: A reactor having a housing that encloses a gas delivery system operatively connected to a reaction chamber and an exhaust assembly. The gas delivery system includes a plurality of gas lines for providing at least one process gas to the reaction chamber. The gas delivery system further includes a mixer for receiving the at least one process gas. The mixer is operatively connected to a diffuser that is configured to diffuse process gases. The diffuser is attached directly to an upper surface of the reaction chamber, thereby forming a diffuser volume therebetween. The diffuser includes at least one distribution surface that is configured to provide a flow restriction to the process gases as they pass through the diffuser volume before being introduced into the reaction chamber.

    Substrate processing apparatus with an injector
    28.
    发明授权
    Substrate processing apparatus with an injector 有权

    公开(公告)号：US12195852B2

    公开(公告)日：2025-01-14

    申请号：US17530161

    申请日：2021-11-18

    Applicant: ASM IP Holding B.V.

    Inventor： Kornelius Haanstra ,  Lucian C. Jdira ,  Chris G. M. de Ridder ,  Robin Roelofs ,  Werner Knaepen ,  Herbert Terhorst

    IPC: C23C16/455 ,  C23C16/458 ,  H01L21/673 ,  H01L21/687

    Abstract: A substrate processing apparatus having a tube, a closed liner lining the interior surface of the tube, a plurality of gas injectors to provide a gas to an inner space of the liner, and, a gas exhaust duct to remove gas from the inner space is disclosed. The liner may have a substantially cylindrical wall delimited by a liner opening at a lower end and being substantially closed for gases above the liner opening. The apparatus may have a boat constructed and arranged moveable into the inner space via the liner opening and provided with a plurality of substrate holders for holding a plurality of substrates over a substrate support length in the inner space. Each of the gas injectors may have a single exit opening at the top and the exit openings of the plurality of injectors are substantially equally divided over the substrate support length.

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