公开(公告)号：US11898242B2

公开(公告)日：2024-02-13

申请号：US16994025

申请日：2020-08-14

Applicant: ASM IP Holding B.V.

Inventor： Bhushan Zope ,  Eric Christopher Stevens ,  Shankar Swaminathan ,  Roghayyeh Lotfi ,  Mustafa Muhammad ,  Eric Shero

IPC: C23C16/08 ,  C23C16/40 ,  C23C16/34 ,  C23C16/02 ,  C23C16/455 ,  G11C5/06 ,  H01L21/28 ,  H01L29/06 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H10B12/00

CPC classification number: C23C16/34 ,  C23C16/0272 ,  C23C16/08 ,  C23C16/45527 ,  C23C16/45553 ,  G11C5/063 ,  H01L21/28088 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/7851 ,  H01L29/78696 ,  H10B12/053 ,  H10B12/34 ,  H10B12/488

Abstract: Methods for forming a polycrystalline molybdenum film over a surface of a substrate are disclosed. The methods may include: providing a substrate into a reaction chamber; depositing a nucleation film directly on an exposed surface of the substrate, wherein the nucleation film comprises one of a metal oxide nucleation film or a metal nitride nucleation film; and depositing a polycrystalline molybdenum film directly on the nucleation film; wherein the polycrystalline molybdenum film comprises a plurality of molybdenum crystallites having an average crystallite size of less than 80 Å. Structures including a polycrystalline molybdenum film disposed over a surface of a substrate with an intermediate nucleation film are also disclosed.

公开(公告)号：US20220165575A1

公开(公告)日：2022-05-26

申请号：US17529562

申请日：2021-11-18

Applicant: ASM IP Holding B.V.

Inventor： Qi Xie ,  Giuseppe Alessio Verni ,  Tatiana Ivanova ,  Perttu Sippola ,  Michael Eugene Givens ,  Eric Shero ,  Jiyeon Kim ,  Charles Dezelah ,  Petro Deminskyi ,  Ren-Jie Chang

IPC: H01L21/28 ,  H01L21/02 ,  C23C16/52 ,  C23C16/455

Abstract: Methods and systems for depositing threshold voltage shifting layers onto a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a threshold voltage shifting layer onto a surface of the substrate.

公开(公告)号：US20200328285A1

公开(公告)日：2020-10-15

申请号：US16849144

申请日：2020-04-15

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka ,  Michael Givens ,  Eric Shero ,  Jerry Winkler ,  Petri Räisänen ,  Timo Asikainen ,  Chiyu Zhu ,  Jaakko Anttila

IPC: H01L29/49 ,  C23C16/455 ,  H01L21/285 ,  H01L21/3205 ,  C23C16/06 ,  C23C16/34

Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.

公开(公告)号：US20200279721A1

公开(公告)日：2020-09-03

申请号：US16878443

申请日：2020-05-19

Applicant: ASM IP Holding B.V.

Inventor： Carl White ,  Todd Dunn ,  Eric Shero ,  Kyle Fondurulia

IPC: H01J37/32 ,  C23C16/455

Abstract: A showerhead including a body having an opening, a first plate positioned within the opening and having a plurality of slots, a second plate positioned within the opening and having a plurality of slots, and wherein each of the first plate plurality of slots are concentrically aligned with the second plate plurality of slots.

公开(公告)号：US10002936B2

公开(公告)日：2018-06-19

申请号：US14919180

申请日：2015-10-21

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka ,  Michael Givens ,  Eric Shero ,  Jerry Winkler ,  Petri Räisänen ,  Timo Asikainen ,  Chiyu Zhu ,  Jaakko Anttila

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/3205 ,  H01L21/4763 ,  H01L21/44 ,  H01L29/49 ,  C23C16/455 ,  H01L21/285 ,  C23C16/06 ,  C23C16/34 ,  H01L29/51

CPC classification number: H01L29/4966 ,  C23C16/06 ,  C23C16/34 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/45531 ,  H01L21/28562 ,  H01L21/32051 ,  H01L29/517

Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.

公开(公告)号：US09873942B2

公开(公告)日：2018-01-23

申请号：US14966335

申请日：2015-12-11

Applicant: ASM IP HOLDING B.V.

Inventor： Christophe Pomarede ,  Eric Shero ,  Mohith Verghese ,  Jan Willem Maes ,  Chang-Gong Wang

IPC: C23C16/00 ,  C23C16/455 ,  C23C16/448 ,  C23C16/52 ,  H01J37/32 ,  H01L21/314 ,  H01L21/316 ,  C23C16/04 ,  H01L21/02 ,  H01L27/108 ,  C23C14/24 ,  H01L21/28

CPC classification number: C23C16/45525 ,  C23C14/246 ,  C23C16/045 ,  C23C16/448 ,  C23C16/4482 ,  C23C16/4485 ,  C23C16/4486 ,  C23C16/45527 ,  C23C16/45561 ,  C23C16/52 ,  F17C2205/0142 ,  F17C2205/0146 ,  F17C2270/0518 ,  H01J37/32449 ,  H01L21/02148 ,  H01L21/02172 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/28194 ,  H01L21/3142 ,  H01L21/31645 ,  H01L27/10861

Abstract: Methods of vapor deposition include multiple vapor sources. A vapor deposition method includes delivering pulses of a vapor containing a first source chemical to a reaction space from at least two separate source vessels simultaneously. The pulses can contain a substantially consistent concentration of the first source chemical. The method can include purging the reaction space of an excess of the first source chemical after the delivering, and delivering pulses of a vapor containing a second source chemical to the reaction space from at least two separate source vessels simultaneously after the purging.

公开(公告)号：US20170306478A1

公开(公告)日：2017-10-26

申请号：US15135224

申请日：2016-04-21

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Eric Shero ,  Suvi Haukka ,  Robert Brennan Milligan ,  Michael Eugene Givens

IPC: C23C16/38 ,  C23C16/455

CPC classification number: C23C16/38 ,  C23C16/45523 ,  C23C16/45525

Abstract: A method for depositing a metal boride film onto a substrate is disclosed. In particular, the method comprises pulsing a metal halide precursor onto the substrate and pulsing a boron compound precursor onto the substrate. A reaction between the metal halide precursor and the boron compound precursor forms a metal boride film. Specifically, the method discloses forming a tantalum boride (TaB2) or a niobium boride (NbB2) film.

公开(公告)号：US09583348B2

公开(公告)日：2017-02-28

申请号：US14987413

申请日：2016-01-04

Applicant: ASM IP Holding B.V.

Inventor： Jerry Chen ,  Vladimir Machkaoutsan ,  Brennan Milligan ,  Jan Maes ,  Suvi Haukka ,  Eric Shero ,  Tom Blomberg ,  Dong Li

IPC: H01L21/336 ,  H01L21/8234 ,  H01L21/28 ,  H01L21/02 ,  H01L21/285

CPC classification number: H01L21/28088 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/02337 ,  H01L21/28044 ,  H01L21/2807 ,  H01L21/28556 ,  H01L21/28568

Abstract: Methods of treating metal-containing thin films, such as films comprising titanium carbide, with a silane/borane agent are provided. In some embodiments a film comprising titanium carbide is deposited on a substrate by an atomic layer deposition (ALD) process. The process may include a plurality of deposition cycles involving alternating and sequential pulses of a first source chemical that comprises titanium and at least one halide ligand, a second source chemical comprising metal and carbon, wherein the metal and the carbon from the second source chemical are incorporated into the thin film, and a third source chemical, wherein the third source chemical is a silane or borane that at least partially reduces oxidized portions of the titanium carbide layer formed by the first and second source chemicals. In some embodiments treatment forms a capping layer on the metal carbide film.

Abstract translation: 提供了用含有碳化钛的薄膜与含硅烷/硼烷剂一起处理含金属薄膜的方法。 在一些实施方案中，包含碳化钛的膜通过原子层沉积（ALD）工艺沉积在衬底上。 该方法可以包括多个沉积循环，其涉及包含钛和至少一种卤化物配体的第一源化学品的交替和顺序脉冲，包含金属和碳的第二源化学物质，其中来自第二源化学物质的金属和碳 和第三源化学品，其中第三源化学品是至少部分地减少由第一和第二源化学品形成的碳化钛层的氧化部分的硅烷或硼烷。 在一些实施方案中，处理在金属碳化物膜上形成覆盖层。

公开(公告)号：US20160024656A1

公开(公告)日：2016-01-28

申请号：US14444744

申请日：2014-07-28

Applicant: ASM IP Holding B.V.

Inventor： Carl White ,  Eric Shero ,  Jereld Lee Winkler ,  David Marquardt

IPC: C23C16/455 ,  C23C16/44

CPC classification number: C23C16/45565 ,  C23C16/4401

Abstract: Showerhead assemblies, gas distribution plates, and systems including the same are disclosed. Exemplary showerhead assemblies include a gas distribution plate. Exemplary gas distribution plates include apertures designed to direct a flow of gas and to reduce stagnation of gas on surfaces of the plates.

Abstract translation: 公开了喷头组件，气体分布板和包括其的系统。 示例性的喷头组件包括气体分配板。 示例性的气体分布板包括设计成引导气流并且减少气体在板的表面上的停滞的孔。

公开(公告)号：US09005539B2

公开(公告)日：2015-04-14

申请号：US13677151

申请日：2012-11-14

Applicant: ASM IP Holding B.V.

Inventor： Michael Halpin ,  Eric Shero ,  Carl White ,  Fred Alokozai ,  Jerry Winkler ,  Todd Dunn

IPC: B01J19/00 ,  B01J8/00 ,  C23C16/44 ,  H01L21/67 ,  C23C16/458

CPC classification number: C23C16/4409 ,  B01J8/0035 ,  B01J19/0073 ,  C23C16/4585 ,  H01L21/67126

Abstract: A reaction chamber including an upper region for processing a substrate, a lower region for loading a substrate, a susceptor movable within the reaction chamber, a first sealing member positioned on a perimeter of the susceptor, a second sealing member positioned between the upper region and the lower region, wherein the first and second sealing members are selectively engaged with one another to limit communication between the upper region and the lower region.

Abstract translation: 一种反应室，包括用于处理基板的上部区域，用于装载基板的下部区域，可在反应室内移动的基座，位于基座周边的第一密封构件，位于上部区域和 下部区域，其中第一和第二密封构件彼此选择性地接合以限制上部区域和下部区域之间的连通。