公开(公告)号：US20210384046A1

公开(公告)日：2021-12-09

申请号：US17336494

申请日：2021-06-02

Applicant: ASM IP Holding B.V.

Inventor： Gijsbert Hendrik Ronner ,  Christianus G.M. de Ridder ,  Theodorus G.M. Oosterlaken ,  Klaas P. Boonstra ,  Jeroen de Jonge ,  Lucian Jdira ,  Chaggai Shmuel Ganani

IPC: H01L21/67 ,  B65G47/90

Abstract: The disclosure relates to a substrate processing apparatus for processing a plurality of substrates. The apparatus comprising a reactor mounted in the apparatus and configured for processing substrates and a reactor mover for moving the reactor for maintenance. The reactor mover is constructed and arranged with a lift to move the reactor to a lower height to allow for access to the reactor by a maintenance worker.

公开(公告)号：US20190301014A1

公开(公告)日：2019-10-03

申请号：US15940729

申请日：2018-03-29

Applicant: ASM IP Holding B.V.

Inventor： Dieter Pierreux ,  Cornelis Thaddeus Herbschleb ,  Werner Knaepen ,  Bert Jongbloed ,  Steven Van Aerde ,  Kelly Houben ,  Theodorus Oosterlaken ,  Chris de Ridder ,  Lucian Jdira

IPC: C23C16/458 ,  C23C16/56 ,  C23C16/50 ,  C23C16/48 ,  C23C16/455

Abstract: The invention relates to a substrate processing apparatus comprising a reaction chamber provided with a substrate rack for holding a plurality of substrates in the reaction chamber. The substrate rack may have a plurality of spaced apart substrate holding provisions configured to hold the plurality of substrates. The apparatus may have an illumination system constructed and arranged to irradiate radiation with a range from 100 to 500 nanometers onto a top surface of the substrates.

公开(公告)号：US20190066997A1

公开(公告)日：2019-02-28

申请号：US15690017

申请日：2017-08-29

Applicant: ASM IP Holding B.V.

Inventor： Arjen Klaver ,  Werner Knaepen ,  Lucian Jdira ,  Gido van der Star ,  Ruslan Kvetny

IPC: H01L21/02 ,  C23C16/52 ,  C23C16/44 ,  C23C16/455

Abstract: There is provided a method and apparatus for forming a layer, by sequentially repeating a layer deposition cycle to process a substrate disposed in a reaction chamber. The deposition cycle comprising: supplying a first precursor into the reaction chamber for a first pulse period; supplying a second precursor into the reaction chamber for a second pulse period. At least one of the first and second precursors may be supplied into the reaction chamber for a pretreatment period longer than the first or second pulse period before sequentially repeating the deposition cycles.

公开(公告)号：US20170011910A1

公开(公告)日：2017-01-12

申请号：US15240141

申请日：2016-08-18

Applicant: ASM IP Holding B.V.

Inventor： Bert Jongbloed ,  Dieter Pierreux ,  Cornelius A. van der Jeugd ,  Herbert Terhorst ,  Lucian Jdira ,  Radko G. Bankras ,  Theodorus G.M. Oosterlaken

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/56

CPC classification number: H01L21/02337 ,  C23C16/402 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02233 ,  H01L21/02274

Abstract: In some embodiments, a reactive curing process may be performed by exposing a semiconductor substrate in a process chamber to an ambient containing hydrogen peroxide, with the pressure in the process chamber at about 300 Torr or less. In some embodiments, the residence time of hydrogen peroxide molecules in the process chamber is about five minutes or less. The curing process temperature may be set at about 500° C. or less. The curing process may be applied to cure flowable dielectric materials and may provide highly uniform curing results, such as across a batch of semiconductor substrates cured in a batch process chamber.

Abstract translation: 在一些实施方案中，反应性固化方法可以通过将处理室中的半导体衬底暴露于含有过氧化氢的环境中，其中处理室中的压力为约300托或更小。 在一些实施方案中，过氧化氢分子在处理室中的停留时间为约5分钟或更短。 固化过程温度可以设定在约500℃或更低。 固化过程可用于固化可流动介电材料，并且可以提供高度均匀的固化结果，例如在批处理室中固化的一批半导体衬底。