-
公开(公告)号：US20200283893A1
公开(公告)日：2020-09-10
申请号：US16802920
申请日：2020-02-27
Applicant: ASM IP Holding B.V.
Inventor： YoungChol Byun , Bed Prasad Sharma , Shankar Swaminathan , Eric James Shero
IPC: C23C16/36 , C23C16/455
Abstract: A method for forming a layer comprising SiOCN on a substrate is disclosed. An exemplary method includes thermally depositing the layer comprising SiOCN on a surface of the substrate. The layer comprising SiOCN can be used for various applications, including spacers, etch stop layers, and etch resistant layers.
Search Results
21
records
(took 0.01 seconds)
筛选
AND
AND
过滤
NOT
NOT
Scan to Join
