公开(公告)号：US07223676B2

公开(公告)日：2007-05-29

申请号：US10838052

申请日：2004-05-03

Applicant: Hiroji Hanawa ,  Kartik Ramaswamy ,  Kenneth S. Collins ,  Amir Al-Bayati ,  Biagio Gallo ,  Andrew Nguyen

Inventor： Hiroji Hanawa ,  Kartik Ramaswamy ,  Kenneth S. Collins ,  Amir Al-Bayati ,  Biagio Gallo ,  Andrew Nguyen

IPC: H01L21/44 ,  H01L21/425

CPC classification number: H01L21/02274 ,  C23C14/48 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32174 ,  H01J37/32357 ,  H01J37/32412 ,  H01J2237/2001 ,  H01L21/02126 ,  H01L21/2236 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/31604 ,  H01L21/318 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823842 ,  H01L29/6659 ,  Y10T29/5313

Abstract: A low temperature process for depositing a coating containing any of silicon, nitrogen, hydrogen or oxygen on a workpiece includes placing the workpiece in a reactor chamber facing a processing region of the chamber, introducing a process gas containing any of silicon, nitrogen, hydrogen or oxygen into the reactor chamber, generating a torroidal RF plasma current in a reentrant path through the processing region by applying RF plasma source power at an HF frequency on the order of about 10 MHz to a portion of a reentrant conduit external of the chamber and forming a portion of the reentrant path, applying RF plasma bias power at an LF frequency on the order of one or a few MHz to the workpiece, and maintaining the temperature of the workpiece under about 100 degrees C.

Abstract translation: 用于在工件上沉积含有硅，氮，氢或氧中的任何一种的涂层的低温方法包括将工件放置在面向腔室的处理区域的反应器室中，引入含有硅，氮，氢或任何硅， 氧气进入反应器室，通过将RF等离子体源功率施加在大约10MHz量级的HF频率处的RF等离子体源功率在腔室外部的折返导管的一部分上，形成通过处理区域的折返路径中的环形RF等离子体电流，并形成 可折回路径的一部分，将RF等离子体偏置功率施加到工件的一个或几MHz量级的LF频率上，并将工件的温度保持在约100摄氏度。

公开(公告)号：US20070032095A1

公开(公告)日：2007-02-08

申请号：US11199572

申请日：2005-08-08

Applicant: Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

Inventor： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

IPC: H01L21/00

CPC classification number: B23K26/0738 ,  B23K26/0608 ,  B23K26/0876 ,  B23K26/361 ,  B23K26/40 ,  B23K2103/172 ,  B23K2103/50 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76886

Abstract: A method of forming a conductor in a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on the surfaces of the high aspect ratio openings including the vertical side walls, depositing a metal barrier layer comprising the barrier metal on the first barrier layer, depositing a main conductor species seed layer on the metal barrier layer and depositing a main conductor layer. The method further includes annealing the main conductor layer by (a) directing light from an array of continuous wave lasers into a line of light extending at least partially across the thin film structure, and (b) translating the line of light relative to the thin film structure in a direction transverse to the line of light. The method of Claim 1 further comprising, prior to the annealing step, depositing an amorphous carbon optical absorber layer on the main conductor layer. The step of depositing an amorphous carbon optical absorber layer includes introducing a carbon-containing process gas into a reactor chamber containing the substrate in a process zone of the reactor, applying RF source power to an external reentrant conduit of the reactor to generate a reentrant toroidal RF plasma current passing through the process zone and applying a bias voltage to the substrate.

Abstract translation: 在半导体衬底上形成薄膜结构中的导体的方法包括在具有垂直侧壁的基底层中形成高纵横比的开口，在高方面的表面上沉积包含阻挡金属的电介质化合物的介电阻挡层 比例开口，包括垂直侧壁，在第一阻挡层上沉积包括阻挡金属的金属阻挡层，在金属阻挡层上沉积主导体种子种子层并沉积主导体层。 该方法还包括通过以下步骤来退火主导体层：（a）将来自连续波激光器阵列的光引导到至少部分穿过薄膜结构的光线，以及（b）相对于薄的平面 薄膜结构在横向于光线的方向上。 2.根据权利要求1所述的方法，还包括在所述退火步骤之前，在所述主导体层上沉积无定形碳光吸收层。 沉积无定形碳光吸收层的步骤包括将含碳工艺气体引入反应器的反应器室中，该反应器室在反应器的工艺区域中，将RF源功率施加到反应器的外部折入导管以产生可重入环形 RF等离子体电流通过工艺区域并向衬底施加偏置电压。

公开(公告)号：US20070032054A1

公开(公告)日：2007-02-08

申请号：US11199593

申请日：2005-08-08

Applicant: Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

Inventor： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

IPC: H01L21/26

CPC classification number: H01L21/0276 ,  C23C16/26 ,  C23C16/507 ,  H01J37/321 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/268 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139 ,  Y10S430/151

Abstract: A method of processing a thin film structure on a semiconductor substrate using an optically writable mask includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be etched in accordance with a predetermined pattern, and depositing a carbon-containing hard mask layer on the substrate by (a) introducing a carbon-containing process gas into the chamber, (b) generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, and (c) coupling RF plasma bias power or bias voltage to the workpiece. The method further includes photolithographically defining the predetermined pattern in the carbon-containing hard mask layer, and etching the target layer in the presence of the hard mask layer.

Abstract translation: 使用光学可写掩模在半导体衬底上处理薄膜结构的方法包括将衬底放置在反应室中，所述衬底在其表面上根据预定图案在其表面上具有待蚀刻的靶层，并且沉积碳 - （a）将含碳工艺气体引入所述腔室中，（b）在折入路径中产生可重入环形的RF等离子体电流，所述凹入的RF等离子体电流包括通过耦合等离子体RF源功率的工件区域 到（c）将RF等离子体偏置功率或偏置电压耦合到工件的外部部分。 该方法还包括光刻地限定含碳硬掩模层中的预定图案，并且在存在硬掩模层的情况下蚀刻目标层。

公开(公告)号：US07094670B2

公开(公告)日：2006-08-22

申请号：US11046661

申请日：2005-01-28

Applicant: Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo

Inventor： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo

IPC: H01L21/42 ,  H01L21/425 ,  H01L21/205

CPC classification number: H01J37/32082 ,  H01J37/321 ,  H01L21/67109 ,  H01L21/6831

Abstract: A method of performing plasma immersion ion implantation on a workpiece in a plasma reactor chamber, includes placing the workpiece on a workpiece support in the chamber, controlling a temperature of the wafer support near a constant level, performing plasma immersion ion implantation on the workpiece by introducing an implant species precursor gas into the chamber and generating a plasma while minimizing deposition and minimizing etching by holding the temperature of the workpiece within a temperature range that is above a workpiece deposition threshold temperature and below a workpiece etch threshold temperature.

Abstract translation: 在等离子体反应器室中对工件进行等离子体浸没离子注入的方法包括将工件放置在腔室中的工件支撑件上，将晶片支架的温度控制在恒定水平附近，通过在工件上进行等离子体浸没离子注入 将植入物种前体气体引入室中并产生等离子体，同时使沉积最小化并且通过将工件的温度保持在高于工件沉积阈值温度并低于工件蚀刻阈值温度的温度范围内来最小化蚀刻。

公开(公告)号：US20060088655A1

公开(公告)日：2006-04-27

申请号：US10971772

申请日：2004-10-23

Applicant: Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Amir Al-Bayati ,  Andrew Nguyen ,  Biagio Gallo

Inventor： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Amir Al-Bayati ,  Andrew Nguyen ,  Biagio Gallo

IPC: C23C14/00 ,  C23C16/52

CPC classification number: H01J37/321 ,  C23C14/48 ,  C23C14/54 ,  H01J37/32412 ,  H01J37/32935

Abstract: A method of measuring ion dose in a plasma immersion ion implantation reactor during ion implantation of a selected species into a workpiece includes placing the workpiece on a pedestal in the reactor and feeding into the reactor a process gas comprising a species to be implanted into the workpiece, and then coupling RF plasma source power to a plasma in the reactor. It further includes coupling RF bias power to the workpiece by an RF bias power generator that is coupled to the workpiece through a bias feedpoint of the reactor and measuring RF current at the feedpoint to generate a current-related value, and then integrating the current-related over time to produce an ion implantation dose-related value.

Abstract translation: 在将所选择的物质离子注入工件期间测量等离子体浸入式离子注入反应器中的离子剂量的方法包括将工件放置在反应器中的基座上，并将反应器中的工件气体进料到反应器中， 然后将RF等离子体源功率耦合到反应器中的等离子体。 它还包括通过RF偏置功率发生器将RF偏置功率耦合到工件，该RF偏置功率发生器通过电抗器的偏置馈电点耦合到工件，并且在馈电点处测量RF电流以产生电流相关值， 随着时间的推移产生离子注入剂量相关值。

公开(公告)号：US20060073683A1

公开(公告)日：2006-04-06

申请号：US11284975

申请日：2005-11-21

Applicant: Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Monroy

Inventor： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Monroy

IPC: H01L21/04

CPC classification number: H01J37/32357 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32412 ,  H01L21/2236

Abstract: A method of ion implanting a species in a workpiece to a selected ion implantation profile depth includes placing a workpiece having a semiconductor material on an electrostatic chuck in or near a processing region of a plasma reactor chamber and applying a chucking voltage to the electrostatic chuck. The method further includes introducing into the chamber a precursor gas including a species to be ion implanted in the workpiece and applying an RF bias to the electrostatic chuck, the RF bias having a bias level corresponding to the ion implantation profile depth.

Abstract translation: 将工件中的物质离子注入到选定的离子注入轮廓深度的方法包括将具有半导体材料的工件放置在等离子体反应器室的处理区域中或其附近的静电卡盘上，并向静电卡盘施加夹持电压。 所述方法还包括将包括要离子植入的物质的前体气体引入所述室中并将RF偏压施加到所述静电卡盘，所述RF偏压具有对应于所述离子注入轮廓深度的偏置电平。

公开(公告)号：US20060051515A1

公开(公告)日：2006-03-09

申请号：US11253895

申请日：2005-10-18

Applicant: Andrew Nguyen

Inventor： Andrew Nguyen

IPC: B08B3/00 ,  B05C5/00 ,  B05D1/02

CPC classification number: H01L21/6715

Abstract: According to one aspect of the invention, a dispense head for a wafer processing apparatus is provided. The dispense head may include an inlet, at least one outlet, a drain, and a passageway therethrough interconnecting the inlet, the outlet, and the drain. The inlet may be a first height above a bottom of the passageway, the outlet may be a second height above the bottom, and the drain may be a third height above the bottom. A first valve may be connected to the inlet, and a second valve may be connected to the drain. When the first valve is opened and the second valve is closed, fluid flows into the inlet and out of the outlet. When the second valve is opened and the first valve is closed, fluid from the passageway flows out of the drain. A pump may be connected to the drain.

Abstract translation: 根据本发明的一个方面，提供了一种用于晶片处理装置的分配头。 分配头可以包括入口，至少一个出口，排水口和通过其互连入口，出口和排水口的通道。 入口可以是通道底部上方的第一高度，出口可以是底部上方的第二高度，并且排水口可以是底部上方的第三高度。 第一阀可以连接到入口，并且第二阀可以连接到排水管。 当第一阀打开并且第二阀关闭时，流体流入入口并离开出口。 当第二阀打开并且第一阀关闭时，来自通道的流体流出排水管。 泵可以连接到排水管。

公开(公告)号：US20060019477A1

公开(公告)日：2006-01-26

申请号：US10896113

申请日：2004-07-20

Applicant: Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth Collins ,  Amir Al-Bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

Inventor： Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth Collins ,  Amir Al-Bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

IPC: H01L21/425

CPC classification number: H01J37/32412 ,  C23C14/48 ,  H01J37/32357 ,  H01L21/2236 ,  H01L21/31612

Abstract: A plasma immersion ion implantation process for implanting a selected species at a desired ion implantation depth profile in a workpiece is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural elongate orifices oriented in a non-parallel direction relative to a surface plane of the ion shower grid. The process includes placing a workpiece in the process region, the workpiece having a workpiece surface generally facing the surface plane of the ion shower grid, and furnishing the selected species into the ion generation region in gaseous, molecular or atomic form and evacuating the process region at an evacuation rate sufficient to create a pressure drop across the ion shower grid from the ion generation region to the process region of about a factor of at least four. The process further includes applying plasma source power to generate a plasma of the selected species in the ion generation region, and applying a grid potential to the ion shower grid to create a flux of ions from the plasma through the grid and into the process region. The process also includes applying a sufficient bias voltage to at least one of: (a) the workpiece, (b) the grid, relative to at least one of: (a) the workpiece, (b) a plasma in the ion generation region, (c) a surface of the chamber, to accelerate the flux of ions to a kinetic energy distribution generally corresponding to the desired ion implantation depth profile in the workpiece.

Abstract translation: 用于在工件中以期望的离子注入深度分布植入选定物种的等离子体浸没离子注入工艺在反应室中进行，其中离子喷淋网格将室分成上部离子产生区域和下部工艺区域， 具有相对于离子喷淋栅格的表面平行方向定向的多个细长孔的离子喷淋格栅。 该方法包括将工件放置在工艺区域中，工件具有大致面向离子喷淋栅格的表面的工件表面，并且将所选择的物质以气态，分子或原子形式提供给离子产生区域并排空工艺区域 其排气速率足以在离子喷淋格栅上从离子产生区域到达至少四倍的因子的过程区域产生压降。 该方法还包括施加等离子体源功率以在离子产生区域中产生所选择的物质的等离子体，以及将栅极电位施加到离子淋浴栅格以产生离子通过栅格离子并进入过程区域的通量。 该方法还包括向以下至少一个施加足够的偏置电压：（a）工件，（b）栅格，相对于以下至少一个：（a）工件，（b）离子产生区域中的等离子体 ，（c）室的表面，以将离子通量加速到通常对应于工件中期望的离子注入深度分布的动能分布。

公开(公告)号：US20050273205A1

公开(公告)日：2005-12-08

申请号：US11022179

申请日：2004-12-23

Applicant: Harvey Nickerson ,  Russel Leatherman ,  Jose Macias Galarza ,  Bill Merkt ,  Adam Dunford ,  Andrew Nguyen ,  Susan Basch ,  Sergio Perez Araujo

Inventor： Harvey Nickerson ,  Russel Leatherman ,  Jose Macias Galarza ,  Bill Merkt ,  Adam Dunford ,  Andrew Nguyen ,  Susan Basch ,  Sergio Perez Araujo

IPC: A01G25/16 ,  G05B11/01 ,  G05D7/00 ,  G05D11/00

CPC classification number: A01G25/16 ,  A01G25/167 ,  G05B15/02 ,  G05B19/042 ,  G05B19/0426 ,  G05B2219/23043 ,  G05B2219/23051 ,  G05B2219/23297 ,  G05B2219/23406 ,  G05B2219/25085 ,  G05B2219/2625

Abstract: Described herein are several embodiments relating to modular irrigation controllers. In many implementations, the irrigation controllers are modular in that various functional components of the irrigation controller are implemented in removable modules that when inserted into position within the controller, expand the capabilities of the controller. Also described are various different types of expansion modules that may be coupled to the modular controller, having as variety of functions and features, as well as related methods of use and configuration of these modules in the controller. In one implementation, an expansion module is provided that includes a microcontroller capable of sending and receiving data communications to and from the a main microcontroller of the controller that executed irrigation programs, the data communications relating to an irrigation program.

Abstract translation: 这里描述了与模块化灌溉控制器有关的若干实施例。 在许多实施方式中，灌溉控制器是模块化的，其中冲洗控制器的各种功能组件以可移除模块实现，当插入到控制器内的位置时，扩展控制器的能力。 还描述了可以耦合到模块化控制器的各种不同类型的扩展模块，具有各种功能和特征，以及这些模块在控制器中的使用和配置的相关方法。 在一个实现中，提供了一种扩展模块，其包括微控制器，该微控制器能够发送和接收执行灌溉程序的控制器的主微控制器的数据通信，该控制器执行灌溉程序，涉及灌溉程序的数据通信。

公开(公告)号：US20050214478A1

公开(公告)日：2005-09-29

申请号：US10873600

申请日：2004-06-22

Applicant: Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth Collins ,  Amir Al-Bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

Inventor： Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth Collins ,  Amir Al-Bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

IPC: C23C16/00 ,  C23C16/40 ,  C23C16/452 ,  C23C16/517

CPC classification number: C23C16/452 ,  C23C16/402 ,  C23C16/517

Abstract: A chemical vapor deposition process is carried out in a reactor chamber having a set of plural parallel ion shower grids that divide the chamber into an upper ion generation region and a lower process region, each of the ion shower grids having plural orifices in mutual registration from grid to grid, each orifice being oriented in a non-parallel direction relative to a surface plane of the respective ion shower grid. A workpiece is placed in the process region, so that a workpiece surface of the workpiece is generally facing a surface plane of the nearest one of the ion shower grids, and a gas mixture comprising a deposition precursor species is furnished into the ion generation region. The process region is evacuated at an evacuation rate sufficient to create a pressure drop across the plural ion shower grids between the ion generation and process regions whereby the pressure in the ion generation region is several times the pressure in the process region. The process further includes applying plasma source power to generate a plasma of the deposition precursor species in the ion generation region and applying successive grid potentials to successive ones of the grids.

Abstract translation: 化学气相沉积工艺在具有一组多个并联离子淋浴网格的反应室中进行，该平行离子淋浴网将腔室分成上部离子产生区域和下部处理区域，每个离子淋浴网格具有相互配准的多个孔口 网格到网格，每个孔口相对于相应的离子喷淋网格的表面平行于非平行方向。 将工件放置在工艺区域中，使得工件的工件表面通常面向最接近的一个离子淋浴栅格的表面，并且将包含沉积前体物质的气体混合物配备到离子产生区域中。 处理区域以足以在离子产生和处理区域之间的多个离子淋浴栅格之间产生压降的抽空速率抽真空，由此离子产生区域中的压力是处理区域中压力的几倍。 该方法还包括施加等离子体源功率以在离子产生区域中产生沉积前体物质的等离子体，并将连续的栅格电势施加到连续的栅极。