公开(公告)号：US20180025907A1

公开(公告)日：2018-01-25

申请号：US15654185

申请日：2017-07-19

Applicant: Applied Materials, Inc.

Inventor： Lakmal C. Kalutarage ,  Mark Saly ,  David Thompson ,  Abhijit Basu Mallick ,  Tejasvi Ashok ,  Pramit Manna

IPC: H01L21/02 ,  H01L21/762

CPC classification number: H01L21/02274 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/02323 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/76224

Abstract: Methods for seam-less gapfill comprising forming a flowable film by exposing a substrate surface to a silicon-containing precursor and a co-reactant are described. The silicon-containing precursor has at least one akenyl or alkynyl group. The flowable film can be cured by any suitable curing process to form a seam-less gapfill.

公开(公告)号：US20240420934A1

公开(公告)日：2024-12-19

申请号：US18209711

申请日：2023-06-14

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Soman ,  Yanze Wu ,  Zeqing Shen ,  Supriya Ghosh ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Siyao Wang ,  Keith Tatseun Wong ,  Lakmal C. Kalutarage

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/311

Abstract: Exemplary methods of semiconductor processing may include methods for nonconformally building up silicon-and-oxygen-containing material where the top of the feature preferentially fills at a slower rate as compared to the bottom of the feature. Such methods may include iterative nonconformal etching operations and/or iterative nonconformal inhibition operations. For example, after building up a layer comprising silicon-and-oxygen-containing material, the layer may be nonconformally etched before building up another layer comprising silicon-and-oxygen-containing material. In another example, in the building up of the layer, an inhibitor may be introduced preferentially at and near the top of the features to provide nonconformal buildup of the silicon-and-oxygen-containing material.

公开(公告)号：US20220259734A1

公开(公告)日：2022-08-18

申请号：US17176984

申请日：2021-02-16

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Lakmal C. Kalutarage ,  Thomas Knisley

IPC: C23C16/455 ,  C07F7/00 ,  C07F7/22 ,  C07F7/02 ,  C07F7/30 ,  C23C16/18

Abstract: Methods of forming a metal film having a metal halide with a reducing agent are disclosed. The reducing agent, the reducing agent includes a group IV element containing heterocyclic compound, a radical initiator, an alkly alane, a diborene species and/or a Sn(II) compound.

公开(公告)号：US11371136B2

公开(公告)日：2022-06-28

申请号：US16647794

申请日：2018-09-19

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  David Thompson ,  Lakmal C. Kalutarage ,  Rana Howlader

IPC: H01L21/31 ,  C23C16/04 ,  C23C16/455 ,  H01L21/02

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing a substrate to a blocking molecule to selectively deposit a blocking layer on the first surface. The blocking layer is exposed to a polymer initiator to form a networked blocking layer. A layer is selectively formed on the second surface. The blocking layer inhibits deposition on the first surface. The networked layer may then optionally be removed.

公开(公告)号：US11107674B2

公开(公告)日：2021-08-31

申请号：US16680289

申请日：2019-11-11

Applicant: Applied Materials, Inc.

Inventor： Lakmal C. Kalutarage ,  Mark J. Saly ,  Praket Prakash Jha ,  Jingmei Liang

IPC: H01L21/02 ,  H01L21/768 ,  C23C16/56 ,  C23C16/34

Abstract: Embodiments described and discussed herein provide methods for depositing silicon nitride materials by vapor deposition, such as by flowable chemical vapor deposition (FCVD), as well as for utilizing new silicon-nitrogen precursors for such deposition processes. The silicon nitride materials are deposited on substrates for gap fill applications, such as filling trenches formed in the substrate surfaces. In one or more embodiments, the method for depositing a silicon nitride film includes introducing one or more silicon-nitrogen precursors and one or more plasma-activated co-reactants into a processing chamber, producing a plasma within the processing chamber, and reacting the silicon-nitrogen precursor and the plasma-activated co-reactant in the plasma to produce a flowable silicon nitride material on a substrate within the processing chamber. The method also includes treating the flowable silicon nitride material to produce a solid silicon nitride material on the substrate.

公开(公告)号：US20200234943A1

公开(公告)日：2020-07-23

申请号：US16632164

申请日：2018-07-17

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Lakmal C. Kalutarage ,  Thomas Knisley

IPC: H01L21/02 ,  H01L21/311 ,  C23C16/30 ,  C23C16/455 ,  C23C16/02

Abstract: Methods of enhancing selective deposition are described. In some embodiments, a blocking layer is deposited on a metal surface before deposition of a dielectric. In some embodiments, a metal surface is functionalized to enhance or decrease its reactivity.

公开(公告)号：US20200216949A1

公开(公告)日：2020-07-09

申请号：US16647794

申请日：2018-09-19

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  David Thompson ,  Lakmal C. Kalutarage ,  Rana Howlader

IPC: C23C16/04 ,  C23C16/455 ,  H01L21/02

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing a substrate to a blocking molecule to selectively deposit a blocking layer on the first surface. The blocking layer is exposed to a polymer initiator to form a networked blocking layer. A layer is selectively formed on the second surface. The blocking layer inhibits deposition on the first surface. The networked layer may then optionally be removed.

公开(公告)号：US20200071825A1

公开(公告)日：2020-03-05

申请号：US16550523

申请日：2019-08-26

Applicant: Applied Materials, Inc.

Inventor： Lakmal C. Kalutarage ,  Jeffrey W. Anthis ,  Mark Saly ,  David Thompson ,  Yongjing Lin ,  Shih Chung Chen

IPC: C23C16/455 ,  C23C16/32 ,  C23C28/00

Abstract: Methods of depositing a metal carbide film by exposing a substrate surface to a halide precursor and an aluminum reactant are described. The halide precursor comprises a compound of general formula (I) MXyRn, wherein M is a metal, X is a halogen selected from Cl, Br, F or I, y is from 1 to 6, R is selected from alkyl, CO, and cyclopentadienyl, and n is from 0 to 6. The aluminum reactant comprises a compound of general formula (II) Al(CH2AR1R2R3)3, wherein A is C, Si, or Ge, each of R1, R2, and R3 is independently alkyl or comprises substantially no β-hydrogen.

公开(公告)号：US10354861B2

公开(公告)日：2019-07-16

申请号：US15804503

申请日：2017-11-06

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  David Thompson ,  Lakmal C. Kalutarage

IPC: C23C16/30 ,  H01L21/02 ,  C23C16/56 ,  C23C16/455

Abstract: Methods for the deposition of a SiCON film by molecular layer deposition using a multi-functional amine and a silicon containing precursor having a reactive moiety.

公开(公告)号：US20240332001A1

公开(公告)日：2024-10-03

申请号：US18128484

申请日：2023-03-30

Applicant: Applied Materials, Inc.

Inventor： Lakmal C. Kalutarage ,  Bhaskar Jyoti Bhuyan ,  Mark J. Saly ,  Jeffrey W. Anthis

IPC: H01L21/02

CPC classification number: H01L21/02167 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02208 ,  H01L21/0228

Abstract: Exemplary methods of semiconductor processing may include providing a first precursor to a semiconductor processing chamber. A substrate may be disposed within a processing region of the semiconductor processing chamber. The substrate may define a feature. The methods may include contacting the substrate with the first precursor. The contacting may form a first portion of a silicon-carbon-and-nitrogen-containing material on the substrate. The methods may include providing a second precursor to the semiconductor processing chamber. The methods may include contacting the substrate with the second precursor. The contacting may form the silicon-carbon-and-nitrogen-containing material on the substrate. The silicon-carbon-and-nitrogen-containing material may be void free.