公开(公告)号：US10134581B2

公开(公告)日：2018-11-20

申请号：US15455766

申请日：2017-03-10

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Mihaela Balseanu ,  Li-Qun Xia ,  Dongqing Yang ,  Anchuan Wang

IPC: H01L21/02 ,  H01L21/311 ,  H01L29/66 ,  H01L21/308 ,  H01L21/033 ,  H01L21/3105

Abstract: Methods for forming a spacer comprising depositing a film on the top, bottom and sidewalls of a feature and treating the film to change a property of the film on the top and bottom of the feature. Selectively dry etching the film from the top and bottom of the feature relative to the film on the sidewalls of the feature using a high intensity plasma.

公开(公告)号：US20180301333A1

公开(公告)日：2018-10-18

申请号：US15951655

申请日：2018-04-12

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Zhelin Sun ,  Mihaela Balseanu ,  Li-Qun Xia ,  Bhaskar Jyoti Bhuyan ,  Mark Saly

IPC: H01L21/02 ,  C23C16/56

CPC classification number: H01L21/02326 ,  C23C16/045 ,  C23C16/36 ,  C23C16/45551 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/0228 ,  H01L21/02337

Abstract: Methods and apparatus for forming a conformal SiOC film on a surface are described. A SiCN film is formed on a substrate surface and exposed to a steam annealing process to decrease the nitrogen content, increase the oxygen content and leave the carbon content about the same. The annealed film has one or more of the wet etch rate or dielectric constant of the film.

公开(公告)号：US20180211833A1

公开(公告)日：2018-07-26

申请号：US15879008

申请日：2018-01-24

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Mihaela Balseanu ,  Li-Qun Xia ,  Dongqing Yang ,  Lala Zhu ,  Malcolm J. Bevan ,  Theresa Kramer Guarini ,  Wenbo Yan

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/458 ,  H01L21/3105

CPC classification number: H01L21/02271 ,  C23C16/0245 ,  C23C16/04 ,  C23C16/45551 ,  C23C16/458 ,  C23C16/4583 ,  C23C16/56 ,  H01L21/0228 ,  H01L21/02299 ,  H01L21/02312 ,  H01L21/3105 ,  H01L21/32

Abstract: Processing platforms having a central transfer station with a robot and an environment having greater than or equal to about 0.1% by weight water vapor, a pre-clean chamber connected to a side of the transfer station and a batch processing chamber connected to a side of the transfer station. The processing platform configured to pre-clean a substrate to remove native oxides from a first surface, form a blocking layer using a alkylsilane and selectively deposit a film. Methods of using the processing platforms and processing a plurality of wafers are also described.

公开(公告)号：US20180130642A1

公开(公告)日：2018-05-10

申请号：US15805466

申请日：2017-11-07

Applicant: Applied Materials, Inc.

Inventor： Tsutomu Tanaka ,  John C. Forster ,  Ran Liu ,  Kenichi Ohno ,  Ning Li ,  Mihaela Balseanu ,  Keiichi Tanaka ,  Li-Qun Xia

IPC: H01J37/32 ,  C23C16/50 ,  C23C16/455 ,  C23C16/52 ,  C23C16/458 ,  C23C16/34 ,  C23C16/40

CPC classification number: H01J37/32449 ,  C23C16/345 ,  C23C16/401 ,  C23C16/4554 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/458 ,  C23C16/4583 ,  C23C16/50 ,  C23C16/505 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32137 ,  H01J37/32183 ,  H01J37/3244 ,  H01J37/32935

Abstract: Apparatus and methods to control the phase of power sources for plasma process regions in a batch process chamber. A master exciter controls the phase of the power sources during the process sequence based on feedback from the match circuits of the respective plasma sources.

公开(公告)号：US20180040470A1

公开(公告)日：2018-02-08

申请号：US15789370

申请日：2017-10-20

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Mark Saly ,  David Thompson ,  Mihaela Balseanu ,  Li-Qun Xia

IPC: H01L21/02

CPC classification number: H01L21/0228 ,  C23C16/30 ,  C23C16/308 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45553 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31111

Abstract: Methods for the formation of SiCN, SiCO and SiCON films comprising cyclical exposure of a substrate surface to a silicon-containing gas, a carbon-containing gas and a plasma. Some embodiments further comprise the addition of an oxidizing agent prior to at least the plasma exposure.

公开(公告)号：US09875888B2

公开(公告)日：2018-01-23

申请号：US14872775

申请日：2015-10-01

Applicant: Applied Materials, Inc.

Inventor： Wenbo Yan ,  Cong Trinh ,  Ning Li ,  Victor Nguyen ,  Mihaela Balseanu ,  Li-Qun Xia ,  Mark Saly

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  H01L21/687

CPC classification number: H01L21/02164 ,  C23C16/402 ,  C23C16/45542 ,  C23C16/45551 ,  C23C16/45553 ,  G05B2219/45031 ,  G05B2219/45232 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/68764

Abstract: Processes for depositing SiO2 films on a wafer surface utilizing an aminosilane compound as a silicon precursor are described.

公开(公告)号：US09799511B2

公开(公告)日：2017-10-24

申请号：US15142514

申请日：2016-04-29

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Mark Saly ,  David Thompson ,  Mihaela Balseanu ,  Li-Qun Xia

IPC: H01L21/311 ,  H01L21/02 ,  C23C16/455

CPC classification number: H01L21/0228 ,  C23C16/30 ,  C23C16/308 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45553 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31111

Abstract: Methods for the formation of SiCN, SiCO and SiCON films comprising cyclical exposure of a substrate surface to a silicon-containing gas, a carbon-containing gas and a plasma. Some embodiments further comprise the addition of an oxidizing agent prior to at least the plasma exposure.

公开(公告)号：US20170263437A1

公开(公告)日：2017-09-14

申请号：US15455744

申请日：2017-03-10

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Mihaela Balseanu ,  Li-Qun Xia

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/0217 ,  C23C16/045 ,  C23C16/345 ,  C23C16/45519 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/56 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/31111

Abstract: Methods for forming a spacer comprising depositing a film on the top, bottom and sidewalls of a feature and treating the film to change a property of the film on the top and bottom of the feature so that the film can be selectively etched from the top and bottom of the feature relative to the film on the sidewalls of the feature.

公开(公告)号：US20160068953A1

公开(公告)日：2016-03-10

申请号：US14840485

申请日：2015-08-31

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Steven D. Marcus ,  Tai T. Ngo ,  Kevin Griffin

IPC: C23C16/44 ,  C23C16/52 ,  C23C16/455

Abstract: Apparatus and methods for spatial atomic layer deposition including at least one first exhaust system and at least one second exhaust system. Each exhaust system including a throttle valve and a pressure gauge to control the pressure in the processing region associated with the individual exhaust system.

Abstract translation: 用于空间原子层沉积的装置和方法包括至少一个第一排气系统和至少一个第二排气系统。 每个排气系统包括节流阀和压力计，用于控制与单个排气系统相关联的处理区域中的压力。

公开(公告)号：US20150200110A1

公开(公告)日：2015-07-16

申请号：US14595595

申请日：2015-01-13

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Victor Nguyen ,  Mihaela Balseanu ,  Li-Qun Xia ,  Keiichi Tanaka ,  Steven D. Marcus

IPC: H01L21/311

CPC classification number: H01L21/31144 ,  C23C16/45551 ,  H01J37/32357 ,  H01J37/3244 ,  H01L21/0337 ,  H01L21/68764 ,  H01L21/68771

Abstract: Provided are self-aligned double patterning methods including feature trimming. The SADP process is performed in a single batch processing chamber in which the substrate is laterally moved between sections of the processing chamber separated by gas curtains so that each section independently has a process condition.

Abstract translation: 提供了包括特征修剪的自对准双重图案化方法。 SADP工艺在单批处理室中进行，其中衬底在由气帘分开的处理室的部分之间横向移动，使得每个部分独立地具有工艺条件。