公开(公告)号：US11349047B2

公开(公告)日：2022-05-31

申请号：US17114012

申请日：2020-12-07

Applicant: EPISTAR CORPORATION

Inventor： Yi-Ming Chen ,  Hao-Min Ku ,  Chih-Chiang Lu ,  Tzu-Chieh Hsu

IPC: H01L33/10 ,  H01L33/40 ,  H01L33/38

Abstract: This disclosure discloses a light-emitting device. The light-emitting device includes a light-emitting stack having a first-type semiconductor layer, a second-type semiconductor layer, and an active layer formed between the first-type semiconductor layer and the second-type semiconductor layer; and a reflective structure formed on the first-type semiconductor layer and having a first interface and a second interface. A critical angle at the first interface for a light emitted from the light-emitting stack is larger than that at the second interface. The reflective structure electrically connects to the first-type semiconductor layer at the first interface, and an area of the first interface is more than an area of the second interface in a top view.

公开(公告)号：US10600938B2

公开(公告)日：2020-03-24

申请号：US15983964

申请日：2018-05-18

Applicant: EPISTAR CORPORATION

Inventor： Chih-Chiang Lu ,  Yi-Chieh Lin ,  Rong-Ren Lee ,  Yu-Ren Peng ,  Ming-Siang Huang ,  Ming-Ta Chin ,  Yi-Ching Lee

IPC: H01L33/10 ,  H01L33/04 ,  H01L33/46 ,  H01L33/60 ,  H01L25/075

Abstract: A light-emitting device includes: a light-emitting stack including a first active layer emitting a first light having a first peak wavelength; a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; and a tunneling junction between the diode and the light-emitting stack, wherein the tunneling junction includes a first tunneling layer and a second tunneling layer on the first tunneling layer, the first tunneling layer has a band gap and a thickness of the first tunneling layer is greater than a thickness of the second tunneling layer.

公开(公告)号：US10090643B2

公开(公告)日：2018-10-02

申请号：US15794756

申请日：2017-10-26

Applicant: EPISTAR CORPORATION

Inventor： Tzu-Chieh Hsu ,  Yi-Wen Huang ,  Yi-Hung Lin ,  Chih-Chiang Lu

IPC: H01S5/187 ,  H01S5/042 ,  H01S5/183 ,  H01S5/22 ,  H01S5/343 ,  H01S5/022 ,  H01S5/026 ,  H01S5/028 ,  H01S5/42

Abstract: A light-emitting device is provided. The light-emitting device comprises: an epitaxial structure comprising a first DBR stack, a light-emitting stack and a second DBR stack and a contact layer in sequence; an electrode on the epitaxial structure; a current blocking layer between the contact layer and the electrode; a first opening formed in the current blocking layer; and a second opening formed in the electrode and within the first opening; wherein a part of the electrode fills in the first opening and contacts the contact layer.

公开(公告)号：US09847450B2

公开(公告)日：2017-12-19

申请号：US14520067

申请日：2014-10-21

Applicant: EPISTAR CORPORATION

Inventor： Wen-Luh Liao ,  Chih-Chiang Lu ,  Shih-Chang Lee ,  Hung-Ta Cheng ,  Hsin-Chan Chung ,  Yi-Chieh Lin

IPC: H01L33/00 ,  H01L33/30 ,  H01L33/20 ,  H01L33/42

CPC classification number: H01L33/20 ,  H01L33/0062 ,  H01L33/0079 ,  H01L2933/0091

Abstract: The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprising: a light-emitting stack; and a semiconductor layer having a first surface connecting to the light-emitting stack, a second surface opposite to the first surface, and a void; wherein the void comprises a bottom part near the first surface and an opening on the second surface, and a dimension of the bottom part is larger than the dimension of the opening.

公开(公告)号：US09705029B2

公开(公告)日：2017-07-11

申请号：US14901415

申请日：2013-06-26

Applicant: EPISTAR CORPORATION

Inventor： Chien-Fu Huang ,  Chih-Chiang Lu ,  Chun-Yu Lin ,  Hsin-Chih Chiu

IPC: H01L33/62 ,  H01L33/02 ,  H01L25/075 ,  H01L23/00 ,  H01L21/66 ,  H01L33/36

CPC classification number: H01L33/02 ,  H01L22/12 ,  H01L22/14 ,  H01L24/24 ,  H01L25/0753 ,  H01L33/36 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2924/00

Abstract: The present disclosure provides a method for manufacturing a light-emitting device, comprising: providing a first substrate; providing a semiconductor stack on the first substrate, the semiconductor stack comprising a first conductive type semiconductor layer, a light-emitting layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the light-emitting layer, wherein the semiconductor stack is patterned and comprises a plurality of blocks of semiconductor stack separated from each other, and wherein the plurality of blocks of semiconductor stack comprise a first block of semiconductor stack and a second block of semiconductor stack; performing a separating step to separate the first block of semiconductor stack from the first substrate, and the second block of semiconductor stack remained on the first substrate; providing a permanent substrate comprising a first surface, a second surface, and a third block of semiconductor stack on the first surface; and bonding one of the first block of semiconductor stack and the second block of semiconductor stack to the second surface.

公开(公告)号：US09614127B2

公开(公告)日：2017-04-04

申请号：US14902795

申请日：2013-07-05

Applicant: EPISTAR CORPORATION

Inventor： Chien-Fu Huang ,  Yao-Ning Chan ,  Tzu Chieh Hsu ,  Yi Ming Chen ,  Hsin-Chih Chiu ,  Chih-Chiang Lu ,  Chia-Liang Hsu ,  Chun-Hsien Chang

IPC: H01L33/00 ,  H01L33/48 ,  H01L25/16 ,  H01L33/38

CPC classification number: H01L33/62 ,  H01L25/167 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/38 ,  H01L33/385 ,  H01L33/48 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; wherein there is a trench separating two adjacent semiconductor stacked blocks on the first substrate, and a width of the trench is less than 10 μm; and conducting a first separating step to separate a first semiconductor stacked block of the plurality of semiconductor stacked blocks from the first substrate and keep a second semiconductor stacked block on the first substrate.

公开(公告)号：US09525108B2

公开(公告)日：2016-12-20

申请号：US14512095

申请日：2014-10-10

Applicant: Epistar Corporation

Inventor： Chih-Chiang Lu ,  Wei-Chih Peng ,  Shiau-Huei San ,  Min-Hsun Hsieh

IPC: H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/50

CPC classification number: H01L33/62 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/22 ,  H01L33/28 ,  H01L33/30 ,  H01L33/32 ,  H01L33/38 ,  H01L33/387 ,  H01L33/40 ,  H01L33/405 ,  H01L33/44 ,  H01L33/504 ,  H01L33/508 ,  H01L33/56 ,  H01L33/60

Abstract: An optoelectronic semiconductor device includes a conductive layer; a plurality of electrical connectors extending into the conductive layer; a semiconductor system, formed on the conductive layer, electrically connected to the plurality of electrical connectors and having a side surface; an insulation material directly covering the side surface; and an electrode arranged at a position not corresponding to the plurality of electrical connectors.

Abstract translation: 光电子半导体器件包括导电层; 延伸到导电层中的多个电连接器; 半导体系统，形成在所述导电层上，电连接到所述多个电连接器并具有侧表面; 直接覆盖侧面的绝缘材料; 以及布置在不对应于所述多个电连接器的位置处的电极。

公开(公告)号：US09508894B2

公开(公告)日：2016-11-29

申请号：US14908886

申请日：2013-07-29

Applicant: EPISTAR CORPORATION

Inventor： Chih-Chiang Lu ,  Yi-Ming Chen ,  Chun-Yu Lin ,  Ching-Pei Lin ,  Chung-Hsun Chien ,  Chien-Fu Huang ,  Hao-Min Ku ,  Min-Hsun Hsieh ,  Tzu-Chieh Hsu

IPC: H01L33/62 ,  H01L33/00 ,  H01L21/683

CPC classification number: H01L33/0079 ,  H01L21/6835 ,  H01L21/6836 ,  H01L33/0095 ,  H01L33/62 ,  H01L2221/68318 ,  H01L2221/68363 ,  H01L2221/68381 ,  H01L2933/0066

Abstract: A method of selectively transferring semiconductor devices comprises the steps of providing a substrate having a first surface and a second surface; providing a plurality of semiconductor epitaxial stacks on the first surface, wherein each of the plurality of semiconductor epitaxial stacks comprises a first semiconductor epitaxial stack and a second semiconductor epitaxial stack, and the first semiconductor epitaxial stack is apart from the second semiconductor epitaxial stack, and wherein a adhesion between the first semiconductor epitaxial stack and the substrate is different from a adhesion between the second semiconductor epitaxial stack and the substrate; and selectively separating the first semiconductor epitaxial stack or the second semiconductor epitaxial stack from the substrate.

Abstract translation: 选择性地转移半导体器件的方法包括提供具有第一表面和第二表面的衬底的步骤; 在所述第一表面上提供多个半导体外延堆叠，其中所述多个半导体外延堆叠中的每一个包括第一半导体外延堆叠和第二半导体外延堆叠，并且所述第一半导体外延堆叠体与所述第二半导体外延堆叠体分离，以及 其中所述第一半导体外延叠层和所述基板之间的粘合不同于所述第二半导体外延叠层和所述基板之间的粘附; 以及从衬底选择性地分离第一半导体外延层或第二半导体外延层。

公开(公告)号：US09508891B2

公开(公告)日：2016-11-29

申请号：US14550016

申请日：2014-11-21

Applicant: EPISTAR CORPORATION

Inventor： Chih-Chiang Lu ,  Yi-Chieh Lin ,  Wen-Luh Liao ,  Shou-Lung Chen ,  Chien-Fu Huang

IPC: H01L33/00 ,  H01L33/08 ,  H01L33/10

CPC classification number: H01L33/08 ,  H01L27/15 ,  H01L33/005 ,  H01L33/0062 ,  H01L33/10 ,  H01L33/50 ,  H01L33/56 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2924/00014

Abstract: A method for making a light-emitting device comprises the steps of: providing a growth substrate; forming a first light-emitting semiconductor stack on the growth substrate by epitaxial growth, and the first light-emitting semiconductor stack comprises a first active layer; forming a Distributed Bragg reflector on the first light-emitting semiconductor stack by epitaxial growth; forming a second light-emitting semiconductor stack on the Distributed Bragg reflector by epitaxial growth, and the second light-emitting semiconductor stack comprises a second active layer; and wherein the first active layer emits a first radiation of a first dominant wavelength, and the second active layer emits a second radiation of a second dominant wavelength longer than the first dominant wavelength.

Abstract translation: 制造发光器件的方法包括以下步骤：提供生长衬底; 通过外延生长在生长衬底上形成第一发光半导体堆叠，并且第一发光半导体堆叠包括第一有源层; 通过外延生长在第一发光半导体堆叠上形成分布布拉格反射器; 通过外延生长在所述分布式布拉格反射器上形成第二发光半导体堆叠，并且所述第二发光半导体堆叠包括第二有源层; 并且其中所述第一有源层发射第一主波长的第一辐射，并且所述第二有源层发射比所述第一主波长长的第二主波长的第二辐射。

公开(公告)号：US09461209B2

公开(公告)日：2016-10-04

申请号：US14853511

申请日：2015-09-14

Applicant: Epistar Corporation

Inventor： Min-Yen Tsai ,  Chao-Hsing Chen ,  Tsung-Hsun Chiang ,  Wen-Hung Chuang ,  Bo-Jiun Hu ,  Tzu-Yao Tseng ,  Jia-Kuen Wang ,  Kuan-Yi Lee ,  Yi-Ming Chen ,  Chun-Yu Lin ,  Tsung-Hsien Yang ,  Tzu-Chieh Hsu ,  Kun-De Lin ,  Yao-Ning Chan ,  Chih-Chiang Lu

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/22 ,  H01L33/46

CPC classification number: H01L33/382 ,  H01L33/0012 ,  H01L33/22 ,  H01L33/387 ,  H01L33/46 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: A semiconductor light-emitting device includes a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer includes a periphery surface surrounding the active layer; a plurality of vias penetrating the semiconductor stack to expose the first semiconductor layer; and a patterned metal layer formed on the plurality of vias and covered the periphery surface of the first semiconductor layer.

Abstract translation: 半导体发光器件包括半导体堆叠，其包括第一半导体层，第二半导体层和在第一半导体层和第二半导体层之间的有源层，其中第一半导体层包括围绕有源层的外围表面; 穿过所述半导体堆叠以暴露所述第一半导体层的多个通孔; 以及形成在所述多个通路上并且覆盖所述第一半导体层的外围表面的图案化金属层。