Low impedance VCSELs
    21.
    发明授权

    公开(公告)号:US10978854B2

    公开(公告)日:2021-04-13

    申请号:US16718523

    申请日:2019-12-18

    Abstract: In example implementations of a vertical-cavity surface-emitting laser (VCSEL), the VCSEL includes a p-type distributed Bragg reflector (p-DBR) layer and a p-type ohmic (p-ohmic) contact layer adjacent to the p-DBR layer. The p-DBR layer may include an oxide aperture and the p-ohmic contact layer may have an opening that is aligned with the oxide aperture. The opening may be filled with a dielectric material. A metal layer may be coupled to the p-ohmic contact layer and encapsulate the dielectric material.

    POLARIZATION DIVERSE RING RESONATOR RECEIVERS

    公开(公告)号:US20180275348A1

    公开(公告)日:2018-09-27

    申请号:US15781531

    申请日:2015-12-11

    Abstract: In the examples provided herein, a system includes a loop waveguide; and a grating coupler formed on the loop waveguide to couple light impinging on the grating coupler having a first polarization into the loop waveguide in a first direction, and to couple light having a second polarization, orthogonal to the first polarization, into the loop waveguide in a second direction. The system also includes a ring resonator positioned near the loop waveguide tuned to have a resonant wavelength at a first wavelength to couple light at the first wavelength out of the loop waveguide into the ring resonator. An output waveguide positioned near the ring resonator couples light out of the ring resonator into the output waveguide; and a photodetector detects light propagating out of a first end and a second end of the output waveguide.

    OPTICAL DEVICE FOR PHASE SHIFTING AN OPTICAL SIGNAL

    公开(公告)号:US20230350238A1

    公开(公告)日:2023-11-02

    申请号:US17661249

    申请日:2022-04-28

    CPC classification number: G02F1/025 G02F1/2257 G02F1/0151 G02F1/212

    Abstract: Examples described herein relate to an optical device that entails phase shifting an optical signal. The optical device includes an optical waveguide having a first semiconductor material region and a second semiconductor material region formed adjacent to each other and defining a junction therebetween. Further, the optical device includes an insulating layer formed on top of the optical waveguide. Moreover, the optical device includes a III-V semiconductor layer formed on top of the insulating layer causing an optical mode of an optical signal passing through the optical waveguide to overlap with the first semiconductor material region, the second semiconductor material region, the insulating layer, and the III-V semiconductor layer thereby resulting in a phase shift in the optical signal passing through the optical waveguide.

    Coupled-cavity VCSELs for enhanced modulation bandwidth

    公开(公告)号:US11588298B2

    公开(公告)日:2023-02-21

    申请号:US16909991

    申请日:2020-06-23

    Abstract: Coupled-cavity vertical cavity surface emitting lasers (VCSELs) are provided by the present disclosure. The coupled-cavity VCSEL can comprise a VCSEL having a first mirror, a gain medium disposed above the first mirror, and a second mirror disposed above the gain medium, wherein a first cavity is formed by the first mirror and the second mirror. A second cavity is optically coupled to the VCSEL and configured to reflect light emitted from the VCSEL back into the first cavity of the VCSEL. In some embodiments, the second cavity can be an external cavity optically coupled to the VCSEL through a coupling component. In some embodiments, the second cavity can be integrated with the VCSEL to form a monolithic coupled-cavity VCSEL. A feedback circuit can control operation of the coupled-cavity VCSEL so the output comprises a target high frequency signal.

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