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    Schottky barrier MOSFET systems and fabrication thereof
    21.
    发明授权
    Schottky barrier MOSFET systems and fabrication thereof 失效
    肖特基势垒MOSFET系统及其制造

    公开(公告)号：US5663584A

    公开(公告)日：1997-09-02

    申请号：US368149

    申请日：1994-12-29

    Applicant: James D. Welch

    Inventor： James D. Welch

    IPC: H01L21/8238 ,  H01L27/06 ,  H01L27/07 ,  H01L27/092 ,  H01L27/095 ,  H01L29/78 ,  H03K19/0944 ,  H01L29/76

    CPC classification number: H01L27/095 ,  H01L21/823814 ,  H01L27/0629 ,  H01L27/0727 ,  H01L27/092 ,  H01L29/7839 ,  Y10S257/902

    Abstract: (MOS) device systems-utilizing Schottky barrier source and drain to channel region junctions are disclosed. Experimentally derived results which demonstrate operation of fabricated N-channel and P-channel Schottky barrier (MOSFET) devices, and of fabricated single devices with operational characteristics similar to (CMOS) and to a non-latching (SRC) are reported. Use of essentially non-rectifying Schottky barriers in (MOS) structures involving highly doped and the like and intrinsic semiconductor to allow non-rectifying interconnection of, and electrical accessing of device regions is also disclosed. Insulator effected low leakage current device geometries and fabrication procedures therefore are taught. Selective electrical interconnection of drain to drain, source to drain, or source to source, of N-channel and/or P-channel Schottky barrier (MOSFET) devices formed on P-type, N-type and Intrinsic semiconductor allows realization of Schottky Barrier (CMOS), (MOSFET) with (MOSFET) load, balanced differential (MOSFET) device systems and inverting and non-inverting single devices with operating characteristics similar to (CMOS), which devices can be utilized in modulation, as well as in voltage controled switching and effecting a direction of rectification.

    Abstract translation: （MOS）器件系统 - 利用肖特基势垒源和漏极到沟道区域结。 报道了证明了制造的N沟道和P沟道肖特基势垒（MOSFET）器件以及具有类似于（CMOS）和非锁存（SRC）的操作特性的制造的单个器件的实验推导结果。 还公开了在涉及高掺杂等的（MOS）结构中使用基本上非整流的肖特基势垒和本征半导体，以允许器件区域的非整流互连和电接入。 因此，绝缘体实现了低漏电流器件的几何形状和制造工艺。 在P型，N型和本征半导体上形成的N沟道和/或P沟道肖特基势垒（MOSFET）器件的漏极到漏极，源极到漏极，源极到源极的选择性电互连允许实现肖特基势垒 （MOSFET），（MOSFET）负载，平衡差分（MOSFET）器件系统以及具有类似于（CMOS）工作特性的反相和非反相单器件，这些器件可用于调制，以及电压 控制切换，实现整流方向。

    Applying CRT tube-type electron directingplates in a double slit system to provide an observable bridge between classical and quantum physics
    23.
    发明申请
    Applying CRT tube-type electron directingplates in a double slit system to provide an observable bridge between classical and quantum physics 审中-公开
    在双缝系统中应用CRT管型电子导向板，以提供经典和量子物理学之间的可观察桥梁

    公开(公告)号：US20140084178A1

    公开(公告)日：2014-03-27

    申请号：US13998521

    申请日：2013-11-08

    Applicant: James D. Welch

    Inventor： James D. Welch

    IPC: G21K1/00

    CPC classification number: G21K1/00 ,  G01B2290/55 ,  H01J29/46

    Abstract: Applying a Double Slit System in combination with Cathode Ray Tube-type electron directing plates between which an electron travels on its way to the Slits, and to which plates are applied precise voltage potentials in use, allows controlling where, within the width of a Double Slit System Slit an electron passes, and perhaps enables predicting where on a Double Slit Screen a specific electron will impinge.

    Abstract translation: 将双切口系统与阴极射线管式电子引导板结合使用，电子在其通向狭缝的途中运行，并且在使用中施加精确的电压电位，允许控制在双倍宽度内的哪个位置 狭缝系统狭缝电子通过，也许可以预测特定电子将撞击双层屏幕上的哪里。

    Lamp
    24.
    外观设计
    Lamp 有权

    公开(公告)号：USD661000S1

    公开(公告)日：2012-05-29

    申请号：US29373040

    申请日：2011-02-23

    Applicant: James D. Welch

    Designer： James D. Welch

    Method of improving probability of Knowing through which slit in a double slit system a particle or photon passes while still forming an interference pattern
    25.
    发明申请
    Method of improving probability of Knowing through which slit in a double slit system a particle or photon passes while still forming an interference pattern 审中-公开
    提高概率的方法通过粒子或光子通过的双缝系统中的狭缝，同时仍然形成干涉图案

    公开(公告)号：US20100243917A1

    公开(公告)日：2010-09-30

    申请号：US12387450

    申请日：2009-05-04

    Applicant: James D. Welch

    Inventor： James D. Welch

    IPC: G01N21/64 ,  G01B9/02 ,  G01N21/00

    CPC classification number: G01B9/02 ,  B82Y10/00 ,  G06N10/00

    Abstract: A method of applying a double slit system to the end that both knowledge of an interference pattern formed on a screen located at one distance from the slits, and knowledge of improved probability as to which slit a particular particle or photon passed in the act of forming said interference pattern on that screen, wherein the method uses a remormalization interference pattern preliminarily provided on a screen located at a different distance from the slits, as a reference.

    Abstract translation: 一种施加双缝系统的方法，即在形成在与狭缝一个距离的屏幕上形成的干涉图案的知识以及关于特定颗粒或光子在成形作用中通过的哪个狭缝的概率提高的可能性的知识 该屏幕上的所述干涉图案，其中该方法使用预先设置在位于与狭缝不同的距离处的屏幕上的重新归一化干涉图案作为参考。

    Sample masking in ellipsometer and the like systems including detection of substrate backside reflections
    27.
    发明授权
    Sample masking in ellipsometer and the like systems including detection of substrate backside reflections 有权
    椭偏仪等样品系统中的样品掩蔽，包括衬底背面反射的检测

    公开(公告)号：US07477388B1

    公开(公告)日：2009-01-13

    申请号：US11439491

    申请日：2006-05-24

    Applicant: Martin M. Liphardt ,  James D. Welch ,  Corey L. Bungay ,  John A. Woollam

    Inventor： Martin M. Liphardt ,  James D. Welch ,  Corey L. Bungay ,  John A. Woollam

    IPC: G01J4/00

    CPC classification number: G01N21/211

    Abstract: A system and method of preventing substrate backside reflected components in a beam of electromagnetic radiation caused to reflect from the surface of a sample in an ellipsometer or polarimeter system, involving placing a mask adjacent to the surface of the sample which allows electromagnetic radiation to access the sample over only a limited area, wherein the mask can include detector elements for collecting electromagnetic radiation reflected from the sample backside.

    Abstract translation: 防止在电磁辐射束中的基板背面反射部件在椭圆光度计或偏振计系统中从样品的表面反射的系统和方法，包括将掩模放置在与样品表面相邻的位置，允许电磁辐射进入 仅在有限区域进行采样，其中掩模可以包括用于收集从样品背面反射的电磁辐射的检测器元件。

    Combined use of oscillating means and ellipsometry to determine uncorrelated effective thickness and optical constants of material deposited from a fluid
    28.
    发明授权
    Combined use of oscillating means and ellipsometry to determine uncorrelated effective thickness and optical constants of material deposited from a fluid 有权
    组合使用振荡装置和椭偏仪来确定从流体沉积的材料的不相关的有效厚度和光学常数

    公开(公告)号：US07209234B2

    公开(公告)日：2007-04-24

    申请号：US11404593

    申请日：2006-04-14

    Applicant: John A. Woollam ,  James D. Welch

    Inventor： John A. Woollam ,  James D. Welch

    IPC: G01J4/00

    CPC classification number: G01N21/211 ,  G01B11/0641

    Abstract: A combined ellipsometer and oscillator system applied to a chamber for containing fluid, and method of decorrelated determination of thickness and optical constants of depostable materials present in a fluid. In use the ellipsometer determines the product of thickness and optical constant, and the oscillator system changes frequency of oscillation proportional to the thickness of material deposited upon a surface of an element therein.

    Abstract translation: 应用于用于容纳流体的室的组合椭偏仪和振荡器系统，以及存在于流体中的可沉积材料的厚度和光学常数的去相关确定方法。 在使用中，椭偏仪确定厚度和光学常数的乘积，并且振荡器系统改变与沉积在元件表面上的材料的厚度成比例的振荡频率。

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