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公开(公告)号：US09865294B2
公开(公告)日：2018-01-09
申请号：US15233277
申请日：2016-08-10
Applicant: Seagate Technology LLC
Inventor： ShuaiGang Xiao , XiaoMin Yang , David S. Kuo , Kim Yang Lee , Yautzong Hsu
CPC classification number: G11B5/855 , G11B5/59633 , G11B20/1217 , G11B2020/1281
Abstract: Provided herein is a method including forming a data zone guiding pattern and forming a servo zone guiding pattern. A servo pattern and a data pattern are simultaneously formed. Directed self-assembly of block copolymers is guided by the data zone guiding pattern and the servo zone guiding pattern.
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公开(公告)号：US09626996B2
公开(公告)日：2017-04-18
申请号：US14588865
申请日：2015-01-02
Applicant: Seagate Technology LLC
Inventor： XiaoMin Yang , Zhaoning Yu , Kim Yang Lee , Michael Feldbaum , Yautzong Hsu , Wei Hu , Shuaigang Xiao , Henry Yang , HongYing Wang , Rene Johannes Marinus van de Veerdonk , David Kuo
IPC: G03F7/004 , G11B5/855 , H01L21/3065 , G03F7/40 , H01L21/027 , G03F7/20 , H01L21/02 , B82Y10/00 , B82Y40/00 , G03F7/00 , B81C1/00 , B32B27/36 , B32B27/28 , B32B27/30 , B32B3/30 , G03F7/16 , B05D1/00 , C23F4/00
CPC classification number: G11B5/855 , B05D1/005 , B32B3/30 , B32B27/283 , B32B27/302 , B32B27/308 , B32B27/36 , B32B2457/14 , B81C1/00031 , B81C2201/0149 , B82Y10/00 , B82Y40/00 , C23F4/00 , G03F7/0002 , G03F7/0035 , G03F7/165 , G03F7/2022 , G03F7/203 , G03F7/2059 , G03F7/40 , H01L21/02112 , H01L21/0274 , H01L21/3065 , Y10T428/24612
Abstract: Provided herein is a method, including a) transferring an initial pattern of an initial template to a substrate; b) performing block copolymer self-assembly over the substrate with a density multiplication factor k; c) creating a subsequent pattern in a subsequent template with the density multiplication factor k; and d) repeating steps a)-c) with the subsequent template as the initial template until a design specification for the subsequent pattern with respect to pattern density and pattern resolution is met.
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公开(公告)号：US20150302881A1
公开(公告)日：2015-10-22
申请号：US14699412
申请日：2015-04-29
Applicant: Seagate Technology LLC
Inventor： Sundeep Chauhan , Alexander Kantorov , Kim Yang Lee , David Kuo , Rene Johannes Marinus Van de Veerdonk , Barmeshwar Vikaramaditya
CPC classification number: G11B5/865 , G03F7/0041 , G11B5/59638 , G11B5/746 , G11B5/855 , G11B11/03
Abstract: Provided herein is a method, including forming a first template including a first pattern, wherein forming the first template includes self-assembly of diblock copolymers guided by an initial pattern; forming a second template including a second pattern, wherein the second pattern corresponds to a servo pattern; and forming a master template from the first template, wherein the master template includes one or more portions of the first pattern combined with the second pattern.
Abstract translation: 本文提供的方法包括形成包括第一图案的第一模板，其中形成第一模板包括由初始图案引导的二嵌段共聚物的自组装; 形成包括第二图案的第二模板，其中所述第二图案对应于伺服图案; 以及从所述第一模板形成主模板，其中所述主模板包括与所述第二模式组合的所述第一模式的一个或多个部分。
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24.发明授权公开(公告)号：US11724233B2
公开(公告)日：2023-08-15
申请号：US16924839
申请日：2020-07-09
Applicant: Seagate Technology LLC
Inventor： Thomas Young Chang , Kim Yang Lee , Tan G. Liu , Yautzong Hsu , Shuaigang Xiao
IPC: B01D61/02 , B01D67/00 , B01D61/14 , B01D69/02 , B01D71/02 , B01D69/06 , B01D69/10 , B01D46/10 , B01D69/12
CPC classification number: B01D67/0062 , B01D61/145 , B01D69/02 , B01D69/06 , B01D71/02
Abstract: A first wafer has a first stop layer deposited on a substrate, the substrate used to form a base support structure. A second wafer has a second stop layer deposited on a sacrificial substrate, and a filter layer deposited on the second stop layer. A rib layer is deposited on one of: the first stop layer of the first layer; or a third stop layer that is deposited over the filter layer. A rib pattern is formed in the rib layer. The first and second wafers are flip bonded such that the rib pattern is joined between the filter layer and the first stop layer. Elongated voids are formed within the filter layer. The base support structure is formed within the substrate of the first wafer such that there is a fluid flow path between the base support structure, the rib layer, and the elongated voids of the filter layer.
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25.发明授权公开(公告)号：US11542552B2
公开(公告)日：2023-01-03
申请号：US16909827
申请日：2020-06-23
Applicant: SEAGATE TECHNOLOGY LLC
Inventor： Kim Yang Lee , Thomas Young Chang , David S. Kuo , ShuaiGang Xiao , Xiaomin Yang , Koichi Wago
IPC: B81C1/00 , B01L3/00 , G01N27/327 , C12Q1/6869 , G01N27/447
Abstract: A DNA sequencing device and related methods, wherein the device includes a substrate, a nanochannel formed in the substrate, a first electrode positioned on a first side of the nanochannel, and a second electrode. The second electrode is positioned on a second side of the nanochannel opposite the first electrode and is spaced apart from the first electrode to form an electrode gap that is exposed in the nanochannel. At least a portion of first electrode is movable relative to the second electrode to decrease a size of the electrode gap.
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Patent Agency Ranking
26.发明授权公开(公告)号：US11320397B2
公开(公告)日：2022-05-03
申请号：US16940486
申请日：2020-07-28
Applicant: SEAGATE TECHNOLOGY LLC
Inventor： Thomas Young Chang , David S. Kuo , Kim Yang Lee , Koichi Wago
IPC: G01N27/447 , B01L3/00 , G01N33/487 , C12Q1/6869 , B82Y15/00 , B82Y30/00
Abstract: A DNA sequencing device, and related method, which include an electrode and a plurality of spaced apart alignment structures. The electrode defines an electrode gap, the electrode being operable to detect a change in tunneling current as a DNA strand passes through the electrode gap. The plurality of spaced apart alignment structures are arranged to position nucleotides of the DNA strand in a predetermined orientation as the DNA strand passes through the electrode gap.
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27.发明授权公开(公告)号：US10731210B2
公开(公告)日：2020-08-04
申请号：US15886511
申请日：2018-02-01
Applicant: SEAGATE TECHNOLOGY LLC
Inventor： Kim Yang Lee , Thomas Young Chang , David S. Kuo , ShuaiGang Xiao , Xiaomin Yang , Koichi Wago
IPC: G01N27/327 , C12Q1/6869 , B81C1/00 , G01N27/447 , B01L3/00
Abstract: A DNA sequencing device and related methods, wherein the device includes a substrate, a nanochannel formed in the substrate, a first electrode positioned on a first side of the nanochannel, and a second electrode. The second electrode is positioned on a second side of the nanochannel opposite the first electrode, and is spaced apart from the first electrode to form an electrode gap that is exposed in the nanochannel. At least a portion of first electrode is movable relative to the second electrode to decrease a size of the electrode gap.
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公开(公告)号：US10529366B2
公开(公告)日：2020-01-07
申请号：US15484647
申请日：2017-04-11
Applicant: Seagate Technology LLC
Inventor： Austin P. Lane , Xiaomin Yang , ShuaiGang Xiao , Kim Yang Lee , David S. Kuo
Abstract: A data storage medium may have increased data capacity by being configured with first and second patterned pedestals that are each separated from a substrate by a seed layer. A first polymer brush layer can be positioned between the first and second patterned pedestals atop the seed layer and a second polymer brush layer may be positioned atop each patterned pedestal. The first and second polymer brush layers may be chemically different and a block copolymer can be deposited to self-assemble into separate magnetic domains aligned with either the first or second polymer brush layers.
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公开(公告)号：US09809887B2
公开(公告)日：2017-11-07
申请号：US15052701
申请日：2016-02-24
Applicant: Seagate Technology LLC
Inventor： Michael R. Feldbaum , Justin Jia-Jen Hwu , David S. Kuo , Gennady Gauzner , Kim Yang Lee , Li-Ping Wang
CPC classification number: C23F4/00 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G11B5/855 , Y10T428/265
Abstract: The embodiments disclose a method of fabricating a stack, including replacing a metal layer of a stack imprint structure with an oxide layer, patterning the oxide layer stack using chemical etch processes to transfer the pattern image and cleaning etch residue from the stack imprint structure to substantially prevent contamination of the metal layers.
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公开(公告)号：US20170084300A1
公开(公告)日：2017-03-23
申请号：US15233277
申请日：2016-08-10
Applicant: Seagate Technology LLC
Inventor： ShuaiGang Xiao , XiaoMin Yang , David S. Kuo , Kim Yang Lee , Yautzong Hsu
CPC classification number: G11B5/855 , G11B5/59633 , G11B20/1217 , G11B2020/1281
Abstract: Provided herein is a method including forming a data zone guiding pattern and forming a servo zone guiding pattern. A servo pattern and a data pattern are simultaneously formed. Directed self-assembly of block copolymers is guided by the data zone guiding pattern and the servo zone guiding pattern.
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