公开(公告)号：US20210242089A1

公开(公告)日：2021-08-05

申请号：US16781078

申请日：2020-02-04

Applicant: Tokyo Electron Limited

Inventor： Yun Han ,  Andrew Metz ,  Xinghua Sun ,  David L. O'Meara ,  Kandabara Tapily ,  Henan Zhang ,  Shan Hu

IPC: H01L21/8234 ,  H01L29/66 ,  H01L21/02 ,  H01L21/311 ,  H01L27/088

Abstract: In one embodiment, a method includes providing a substrate comprising a source/drain contact region and a dummy gate, forming a first etch stop layer aligned to the source/drain contact region, where the first etch stop layer does not cover the dummy gate. The method may include forming a second etch stop layer over the first etch stop layer, the second etch stop layer covering the first etch stop layer and the dummy gate. The method may include converting the dummy gate to a metal gate. The method may include removing the second etch stop layer using a plasma etching process. The method may include removing the first etch stop layer.