公开(公告)号：US20140199829A1

公开(公告)日：2014-07-17

申请号：US14153788

申请日：2014-01-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi MATSUMOTO ,  Yusaku KASHIWAGI

IPC: H01L21/285

CPC classification number: B01J23/755 ,  H01L21/76823 ,  H01L21/76838 ,  H01L23/53276 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A graphene patterning method for forming a graphene of predetermined pattern includes bringing a patterning member in which a catalyst metal layer of the predetermined pattern is formed into contact with a substrate having a graphene oxide film. In bringing the patterning member, the catalyst metal layer is brought into contact with the graphene oxide film.

Abstract translation: 用于形成预定图案的石墨烯的石墨烯图案化方法包括将其中形成有预定图案的催化剂金属层的图案形成部件与具有石墨烯氧化膜的基板接触。 在使图形部件移动时，催化剂金属层与氧化石墨烯膜接触。

公开(公告)号：US20240254626A1

公开(公告)日：2024-08-01

申请号：US18564641

申请日：2022-05-17

Applicant: Tokyo Electron Limited

Inventor： Hiroki YAMADA ,  Ryota IFUKU ,  Takashi MATSUMOTO ,  Nobutake KABUKI

IPC: C23C16/455 ,  C23C16/26 ,  C23C16/511 ,  C23C16/52 ,  H01J37/32

CPC classification number: C23C16/45538 ,  C23C16/26 ,  C23C16/45534 ,  C23C16/45544 ,  C23C16/511 ,  C23C16/52 ,  H01J37/3222 ,  H01J37/32449 ,  H01J37/32201 ,  H01J2237/332

Abstract: A film forming method of forming a graphene film includes a loading process of loading a substrate into a processing container, a first process of forming the graphene film on the substrate using plasma of a first processing gas that includes a carbon-containing gas, and a second process of forming a doped graphene film on at least one of the substrate and the graphene film using plasma of a second processing gas that includes a dopant gas.

公开(公告)号：US20230257871A1

公开(公告)日：2023-08-17

申请号：US18002312

申请日：2021-06-11

Applicant: Tokyo Electron Limited

Inventor： Takashi MATSUMOTO ,  Ryota IFUKU

IPC: C23C16/26 ,  C01B32/186 ,  C23C16/511

CPC classification number: C23C16/26 ,  C01B32/186 ,  C23C16/511

Abstract: A film forming method includes a first step of supplying a first aromatic hydrocarbon gas having a first functional group to a substrate provided with an underlayer film, and a second step of activating the first aromatic hydrocarbon gas adsorbed on a surface of the underlayer film by plasma of a first reaction gas that contains at least a rare gas.

公开(公告)号：US20230102051A1

公开(公告)日：2023-03-30

申请号：US17935594

申请日：2022-09-27

Applicant: Tokyo Electron Limited

Inventor： Ryota IFUKU ,  Makoto WADA ,  Nobutake KABUKI ,  Takashi MATSUMOTO ,  Hiroshi TERADA ,  Genji NAKAMURA

IPC: C23C16/26 ,  C23C16/02 ,  C23C16/44 ,  C23C16/513

Abstract: A film forming method includes: a loading process of loading a substrate into a processing container; a first process of forming an interface layer having an amorphous structure or a microcrystalline structure on the substrate by plasma of a first mixed gas including a carbon-containing gas; and a second process of forming a graphene film on the interface layer by plasma of a second mixed gas including the carbon-containing gas.

公开(公告)号：US20220185673A1

公开(公告)日：2022-06-16

申请号：US17593470

申请日：2020-03-05

Applicant: Tokyo Electron Limited

Inventor： Ryota IFUKU ,  Takashi MATSUMOTO ,  Akira FUJIO ,  Shin KONO

IPC: C01B32/186 ,  G01N21/21 ,  G01N21/88 ,  G01J4/04

Abstract: A method for detecting abnormal growth of graphene includes: measuring, through spectroscopic ellipsometry, a reflection spectrum of a measurement object having a graphene film formed through CVD on a substrate; creating a film structure model, calculating polarization parameters, and matching calculated values of the polarization parameters to measured values through fitting; and detecting abnormal growth of the graphene based on a value of goodness of fit obtained when fitting the polarization parameters.

公开(公告)号：US20200303251A1

公开(公告)日：2020-09-24

申请号：US16822210

申请日：2020-03-18

Applicant: Tokyo Electron Limited

Inventor： Makoto WADA ,  Takashi MATSUMOTO ,  Masahito SUGIURA ,  Ryota IFUKU

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: There is provided a semiconductor device including a first conductive layer formed on a substrate; a second conductive layer serving as a wiring layer and a barrier layer provided between the first conductive layer and the second conductive layer, wherein the barrier layer is made of a graphene film, and the second conductive layer includes a metal silicide compound, the metal silicide compound being provided so as to be in contact with the graphene film constituting the barrier layer.

公开(公告)号：US20180090446A1

公开(公告)日：2018-03-29

申请号：US15714951

申请日：2017-09-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroaki KAWASAKI ,  Takashi MATSUMOTO ,  Hiroyuki NAGAI ,  Ryota IFUKU

IPC: H01L23/532 ,  H01L21/285 ,  H01L21/768 ,  H01L21/321

Abstract: There is provided a method for manufacturing Ni wiring. The method includes forming an Ni film on a surface of a substrate having a recess formed thereon by CVD or ALD by using an Ni compound as a film forming material and NH3gas and H2 gas as reduction gases to partially fill the recess. The method further includes annealing the substrate to make the Ni film on the surface of the substrate and on a side surface of the recess reflow into the recess.

公开(公告)号：US20160118589A1

公开(公告)日：2016-04-28

申请号：US14895404

申请日：2014-05-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Munehito KAGAYA ,  Takashi MATSUMOTO ,  Taiki KATO

IPC: H01L51/00 ,  C07C13/70 ,  C07C13/64 ,  C07C2/76

CPC classification number: H01L51/0056 ,  C07C2/76 ,  C07C13/64 ,  C07C13/70 ,  C07C2523/46 ,  C07C2523/52 ,  C07C2523/72 ,  C07C2523/75 ,  C07C2523/755 ,  C08G61/10 ,  C08G2261/312 ,  C08G2261/92 ,  H01L51/001 ,  H01L51/005 ,  H01L51/0057 ,  H01L51/0545 ,  H01L51/0558

Abstract: Provided is an organic semiconductor film with which a desired band gap can be securely achieved. In an ultrahigh vacuum film formation device (10), 5,5′,5″,5′″,5″″,5′″″-hexabromocyclohexa-m-phenylene (CHP) powder is made to sublimate from a fuel cell (12) by the application of heat energy, bromine is made to separate out by causing the CHP molecules to collide with a catalyst metal layer (M) of a substrate (G), and a plurality of generated phenyl radicals are made to mutually bond through Ullmann reactions, thereby forming a two-dimensional network structure of carbon atoms.

Abstract translation: 提供了可以可靠地实现期望带隙的有机半导体膜。 在超高真空成膜装置（10）中，使5,5'，5“，5”“，5”“，5”“ - 六溴环六亚甲基（CHP）粉末从燃料电池 12）通过施加热能，通过使CHP分子与基板（G）的催化剂金属层（M）碰撞而使溴分离，并且使多个产生的苯基相互键合通过 乌尔曼反应，从而形成碳原子的二维网络结构。

公开(公告)号：US20150291425A1

公开(公告)日：2015-10-15

申请号：US14745665

申请日：2015-06-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi MATSUMOTO ,  Osayuki AKIYAMA

IPC: C01B31/02 ,  C01B31/08

CPC classification number: C01B32/168 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/16 ,  C01B32/176 ,  H01J9/025

Abstract: A method for processing carbon nanotubes includes positioning in a treatment chamber of a carbon nanotube processing apparatus a substrate having multiple carbon nanotubes bundled together and oriented substantially perpendicular to a surface of the substrate, and introducing a microwave into the treatment chamber from a planar antenna having multiple microwave radiation holes such that plasma of an etching gas is generated and that the plasma etches the carbon nanotubes starting from one end of the carbon nanotubes bundled together.

Abstract translation: 一种碳纳米管的处理方法，其特征在于，在碳纳米管处理装置的处理室中，将具有多个碳纳米管的基板在基板的表面垂直配置的基板上进行定位，并将微波从具有 产生多个微波辐射孔，使得产生蚀刻气体的等离子体，并且等离子体从碳纳米管的一端开始捆扎在一起，从而蚀刻碳纳米管。

公开(公告)号：US20230148162A1

公开(公告)日：2023-05-11

申请号：US17762230

申请日：2020-09-16

Applicant: Tokyo Electron Limited

Inventor： Shuji AZUMO ,  Masahito SUGIURA ,  Takashi MATSUMOTO ,  Yumiko KAWANO ,  Shinichi IKE ,  Kenji OUCHI

IPC: H01L21/027 ,  C23C16/04 ,  C23C16/06 ,  C23C16/30 ,  B82Y30/00

CPC classification number: H01L21/0271 ,  C23C16/042 ,  C23C16/06 ,  C23C16/30 ,  B82Y30/00

Abstract: The present disclosure provides a technique capable of controlling a shape of an SAM. Provided is a method of forming a target film on a substrate, wherein the method includes preparing a substrate including a layer of a first conductive material formed on a surface of a first region, and a layer of an insulating material formed on a surface of a second region; forming carbon nanotubes on a surface of the layer of the first conductive material; and supplying a raw material gas for a self-assembled film to form the self-assembled film in a region of the surface of the layer of the first conductive material in which the carbon nanotubes have not been formed.