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    Microelectromechanical device having a common ground plane layer and a set of contact teeth and method for making the same
    21.
    发明申请
    Microelectromechanical device having a common ground plane layer and a set of contact teeth and method for making the same 有权
    具有公共接地层和一组接触齿的微机电装置及其制造方法

    公开(公告)号：US20050184836A1

    公开(公告)日：2005-08-25

    申请号：US10994703

    申请日：2004-11-20

    Applicant: Chia-Shing Chou

    Inventor： Chia-Shing Chou

    IPC: B44C1/22 ,  B81B3/00 ,  B81C1/00 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01H1/00 ,  H01H51/22 ,  H01H57/00 ,  H01H59/00 ,  H01L21/00 ,  H01L31/00 ,  H01P1/10

    CPC classification number: B81C1/00611 ,  B81C2201/0121 ,  H01H59/0009 ,  H01H2059/0072 ,  Y10T29/49105

    Abstract: The present invention relates to MEM switches. More specifically, the present invention relates to a system and method for making MEM switches having a common ground plane. One method for making MEM switches includes: patterning a common ground plane layer on a substrate; forming a dielectric layer on the common ground plane layer; depositing a DC electrode region through the dielectric layer to contact the common ground plane layer; and depositing a conducting layer on the DC electrode region so that regions of the conducting layer contact the DC electrode region, so that the common ground plane layer provides a common ground for the regions of the conducting layer

    Abstract translation: 本发明涉及MEM开关。 更具体地，本发明涉及一种用于制造具有公共接地层的MEM开关的系统和方法。 制造MEM开关的一种方法包括：在衬底上构图公共接地层; 在公共接地层上形成介电层; 通过所述电介质层沉积DC电极区域以接触所述公共接地层; 以及在所述DC电极区域上沉积导电层，使得所述导电层的区域与所述DC电极区域接触，使得所述公共接地层提供所述导电层的区域的公共接地

    Method for registering a deposited material with channel plate channels
    22.
    发明申请
    Method for registering a deposited material with channel plate channels 失效
    用通道板通道注入沉积材料的方法

    公开(公告)号：US20050032379A1

    公开(公告)日：2005-02-10

    申请号：US10941350

    申请日：2004-09-14

    Applicant: Marvin Wong ,  Paul Carson

    Inventor： Marvin Wong ,  Paul Carson

    IPC: H01H29/30 ,  B81C1/00 ,  H01H1/00 ,  H01H29/06 ,  B05D3/12 ,  H01L21/302 ,  H01L21/461

    CPC classification number: B81C1/00611 ,  B81B2201/018 ,  B81C2201/0121 ,  H01H1/0036 ,  H01H2029/008

    Abstract: A method for depositing material on a channel plate such that the material is registered to one or more channels formed in the channel plate includes filling at least one of the channels with a resist that is not wetted by the material; depositing the material on at least a region of the channel plate that includes at least part of the resist, the material registering with at least one channel edge as a result of the material's abutment to the resist; and then removing the resist. The method may be used, in one embodiment, to apply an adhesive or gasket material that is used in assembling a switch.

    Abstract translation: 一种用于在通道板上沉积材料使得该材料与通道板中形成的一个或多个通道对准的方法包括用未被该材料润湿的抗蚀剂填充至少一个通道; 在包括至少部分抗蚀剂的通道板的至少一个区域上沉积材料，由于材料与抗蚀剂的邻接，材料与至少一个通道边缘配准; 然后除去抗蚀剂。 在一个实施例中，可以使用该方法来施加用于组装开关的粘合剂或垫圈材料。

    Method for producing co-planar surface structures
    23.
    发明授权
    Method for producing co-planar surface structures 有权
    共面表面结构的制造方法

    公开(公告)号：US06284560B1

    公开(公告)日：2001-09-04

    申请号：US09215973

    申请日：1998-12-18

    Applicant: Joseph Jech, Jr. ,  John A. Lebens ,  John C. Brazas, Jr.

    Inventor： Joseph Jech, Jr. ,  John A. Lebens ,  John C. Brazas, Jr.

    IPC: H01L21302

    CPC classification number: B81C1/00611 ,  B81C2201/0121

    Abstract: A method for producing co-planar surface areas is disclosed. At first a first layer with at least one recess is provided. Onto the first layer a second layer is deposited over the entire area of the first layer wherein the second layer has a thickness greater than the depth of the recess. The second layer is composed of material different to the material of the first layer. The next step removes the second layer completely beyond the area of at least one recess. The remaining portion of the second layer is removed until the second layer is coplanar with the first layer.

    Abstract translation: 公开了一种制造共平面表面积的方法。 首先提供具有至少一个凹部的第一层。 在第一层上，第二层沉积在第一层的整个区域上，其中第二层的厚度大于凹槽的深度。 第二层由与第一层材料不同的材料组成。 下一步骤将第二层完全超过至少一个凹部的区域。 去除第二层的剩余部分直到第二层与第一层共面。

    Method for fabricating multiple types of MEMS devices
    27.
    发明授权
    Method for fabricating multiple types of MEMS devices 有权
    制造多种MEMS器件的方法

    公开(公告)号：US09034679B2

    公开(公告)日：2015-05-19

    申请号：US13926652

    申请日：2013-06-25

    Applicant: FREESCALE SEMICONDUCTOR, INC.

    Inventor： Lianjun Liu

    IPC: H01L29/84 ,  H01L21/02 ,  B81C1/00 ,  B81B3/00

    CPC classification number: B81B3/0021 ,  B81B2207/096 ,  B81C1/00134 ,  B81C1/00611 ,  B81C2201/0121 ,  B81C2203/00

    Abstract: A method entails providing a substrate with a structural layer having a thickness. A partial etch process is performed at locations on the structural layer so that a portion of the structural layer remains at the locations. An oxidation process is performed at the locations which consumes the remaining portion of the structural layer and forms an oxide having a thickness that is similar to the thickness of the structural layer. The oxide electrically isolates microstructures in the structural layer, thus producing a structure. A device substrate is coupled to the structure such that a cavity is formed between them. An active region is formed in the device substrate. A short etch process can be performed to expose the microstructures from an overlying oxide layer.

    Abstract translation: 一种方法需要为基底提供具有厚度的结构层。 在结构层上的位置处执行局部蚀刻工艺，使得结构层的一部分保留在该位置。 在消耗结构层的剩余部分的位置处进行氧化处理，并形成厚度类似于结构层的厚度的氧化物。 氧化物电隔离结构层中的微结构，从而产生结构。 器件衬底耦合到结构，使得在它们之间形成空腔。 在器件衬底中形成有源区。 可以进行短蚀刻工艺以从上覆的氧化物层露出微结构。

    Process for reconditioning semiconductor surface to facilitate bonding
    28.
    发明授权
    Process for reconditioning semiconductor surface to facilitate bonding 有权
    用于修复半导体表面以便于结合的工艺

    公开(公告)号：US08956884B2

    公开(公告)日：2015-02-17

    申请号：US13574347

    申请日：2011-01-26

    Applicant: Parthiban Arunasalam

    Inventor： Parthiban Arunasalam

    IPC: H01L21/00 ,  H01L21/302 ,  B81C1/00 ,  H01L21/02

    CPC classification number: H01L21/302 ,  B81C1/00611 ,  B81C2201/0121 ,  B81C2203/036 ,  H01L21/02057

    Abstract: A non-abrading method to facilitate bonding of semiconductor components, such as silicon wafers, that have micro structural defects in a bonding interface surface. In a preferred method, micro structural defects are removed by forming an oxide layer on the bonding interface surface to a depth below the level of the defect, and then removing the oxide layer to expose a satisfactory surface for bonding, thereby increasing line yield and reducing scrap triggers in fabrication facilities.

    Abstract translation: 用于促进在接合界面表面具有微观结构缺陷的诸如硅晶片的半导体部件的接合的非研磨方法。 在优选的方法中，通过在接合界面上形成氧化层到低于缺陷水平的深度除去微结构缺陷，然后除去氧化物层以暴露出令人满意的粘结表面，从而提高生产线产量并降低 制造设施中的废料触发。

    Microelectromechanical device having a common ground plane and method for making aspects thereof
    29.
    发明申请
    Microelectromechanical device having a common ground plane and method for making aspects thereof 审中-公开
    具有公共接地面的微机电装置及其制造方法

    公开(公告)号：US20090215213A1

    公开(公告)日：2009-08-27

    申请号：US12387086

    申请日：2009-04-27

    Applicant: Chia-Shing Chou

    Inventor： Chia-Shing Chou

    IPC: H01L21/00 ,  H01H11/00

    CPC classification number: B81C1/00611 ,  B81C2201/0121 ,  H01H59/0009 ,  H01H2059/0072 ,  Y10T29/49105

    Abstract: The present invention relates to MEM switches. More specifically, the present invention relates to a system and method for making MEM switches having a common ground plane. One method for making MEM switches includes: patterning a common ground plane layer on a substrate; forming a dielectric layer on the common ground plane layer; depositing a DC electrode region through the dielectric layer to contact the common ground plane layer; and depositing a conducting layer on the DC electrode region so that regions of the conducting layer contact the DC electrode region, so that the common ground plane layer provides a common ground for the regions of the conducting layer

    Abstract translation: 本发明涉及MEM开关。 更具体地，本发明涉及一种用于制造具有公共接地层的MEM开关的系统和方法。 制造MEM开关的一种方法包括：在衬底上构图公共接地层; 在公共接地层上形成介电层; 通过所述电介质层沉积DC电极区域以接触所述公共接地层; 以及在所述DC电极区域上沉积导电层，使得所述导电层的区域与所述DC电极区域接触，使得所述公共接地层提供所述导电层的区域的公共接地

    Method of producing a device with a movable portion
    30.
    发明授权
    Method of producing a device with a movable portion 有权
    制造具有可移动部分的装置的方法

    公开(公告)号：US07396740B2

    公开(公告)日：2008-07-08

    申请号：US11336267

    申请日：2006-01-20

    Applicant: Thor Bakke ,  Martin Friedrichs ,  Benjamin Völker ,  Thomas Haase

    Inventor： Thor Bakke ,  Martin Friedrichs ,  Benjamin Völker ,  Thomas Haase

    IPC: H01L21/30 ,  H01L21/311 ,  H01L21/316

    CPC classification number: B81C1/00142 ,  B81B2201/042 ,  B81C1/00611 ,  B81C2201/0121 ,  B81C2201/019 ,  G02B26/0833

    Abstract: A method of producing a device with a movable portion spaced apart from a support wafer comprises a step of providing the support wafer having a structured surface and a further step of providing a device wafer with a backing layer and a device layer disposed thereon. Further, the method comprises the step of generating a first planarization layer from a first starting material on the support wafer with a first method to fill in the structures of the structured surface of the support wafer, whereby a surface with a first degree of planarization is obtained. Further, the method comprises a step of generating a second planarization layer from a second starting material on the planarized surface of the support wafer with a second method to obtain a surface with a second degree of planarization, which is higher than the first degree of planarization, wherein the first and second planarization layers can be removed together. Additionally, the support wafer is connected to the device wafer such that the device layer and the planarized surface of the support wafer are connected. Then, removing the backing layer of the device wafer is performed, followed by structuring the resulting structure and removing the first and second planarization layers via a common method to generate the moveable portion of the device.

    Abstract translation: 制造具有与支撑晶片间隔开的可移动部分的装置的方法包括提供具有结构化表面的支撑晶片的步骤，以及提供具有背衬层和设置在其上的器件层的器件晶片的另外步骤。 此外，该方法包括以第一种填充支撑晶片的结构化表面的结构的方式从支撑晶片上的第一起始材料产生第一平坦化层的步骤，由此具有第一程度的平坦化的表面是 获得。 此外，该方法包括以第二种方法从支撑晶片的平坦化表面上的第二起始材料产生第二平坦化层的步骤，以获得具有比第一平坦化程度高的第二平坦度的表面 ，其中第一和第二平坦化层可以一起去除。 此外，支撑晶片连接到器件晶片，使得器件层和支撑晶片的平坦化表面被连接。 然后，去除器件晶片的背衬层，然后构造所得到的结构，并且通过常用的方法去除第一和第二平坦化层以产生器件的可移动部分。

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