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公开(公告)号：US20180180472A1
公开(公告)日：2018-06-28
申请号：US15846296
申请日：2017-12-19
Applicant: SICK AG
Inventor： Klaus CLEMENS , Gottfried HUG , Stefan SEITZ
IPC: G01J1/44
CPC classification number: G01J1/44 , G01J2001/4238 , G01J2001/442 , G01J2001/4466 , G01S7/4816 , G01S7/4861 , G01S7/4863 , G01S7/4868 , G01S17/08 , G01S17/89 , G06K7/10851 , H04B10/616 , H04B10/691
Abstract: A light receiver (100), comprising: a plurality of avalanche photodiode elements (10) each being biased with a bias voltage above a breakdown voltage and thus operated in a Geiger mode in order to trigger a Geiger current upon light reception and a plurality of readout circuits (42, 44, 46) associated with individual avalanche photodiode elements (10) or a group of avalanche photodiode elements (10) for reading out a Geiger current generated upon light reception, wherein the readout circuits (42, 44, 46) each comprise a measurement path (42) and a blanking path (46) as well as a switching element (44) for selectively supplying the Geiger current, or a measurement current corresponding to the Geiger current, to the measurement path (42) or the blanking path (46).
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公开(公告)号：US20180138327A1
公开(公告)日：2018-05-17
申请号：US15868929
申请日：2018-01-11
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Massimo Cataldo MAZZILLO , Piero FALLICA , Salvatore LOMBARDO
IPC: H01L31/0216 , H01L31/107 , H01L31/02 , G01J1/44 , H01L27/144
CPC classification number: H01L31/02164 , G01J1/44 , G01J2001/4466 , H01L27/1446 , H01L27/1462 , H01L27/14625 , H01L27/1463 , H01L27/14649 , H01L31/02027 , H01L31/107
Abstract: An array of Geiger-mode avalanche photodiodes is formed in a die and includes: an internal dielectric structure, arranged on the die; and an external dielectric region arranged on the internal dielectric structure. The external dielectric region is formed by an external material that absorbs radiation having a wavelength that falls in a stop-band with low wavelength and transmits radiation having a wavelength that falls in a pass-band with high wavelength, at least part of the pass-band including wavelengths in the infrared. The internal dielectric structure is formed by one or more internal materials that substantially transmit radiation having a wavelength that falls in the stop-band and in the pass-band and have refractive indices that fall in an interval having an amplitude of 0.4. In the stop-band and in the pass-band the external dielectric region has a refractive index with the real part that falls in the above interval.
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公开(公告)号：US20180123611A1
公开(公告)日：2018-05-03
申请号：US15342028
申请日：2016-11-02
Inventor： Neale DUTTON , John Kevin MOORE
CPC classification number: G01S7/4873 , G01J1/44 , G01J2001/4466 , G01S7/4861 , G01S7/4865 , G04F10/005 , H03M7/14
Abstract: The present disclosure includes a method that includes generating a decoded output signal that corresponds to reflected light received by a plurality of single photon avalanche diodes (SPAD) by removing ambient light from a plurality of SPAD array output signals. The removing of ambient light including synchronizing the plurality of SPAD array output signals by using a plurality of parallel time to digital converters, each time to digital converter outputting a synchronized SPAD array output signal, determining a plurality of flexible thresholds for each one of the synchronized SPAD array output signals, comparing current data on the synchronized SPAD array output signals with the respective ones of the flexible threshold in a filter, and outputting the first output signal.
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公开(公告)号：US20180108799A1
公开(公告)日：2018-04-19
申请号：US15609854
申请日：2017-05-31
Inventor： Laurence Stark
IPC: H01L31/107 , H01L31/02 , H01L29/72
CPC classification number: H01L31/107 , G01J2001/4466 , H01L29/72 , H01L31/02027 , H01L31/0352 , H01L31/1037 , H01L31/1804 , Y02E10/547 , Y02P70/521
Abstract: An avalanche diode includes a PN junction with a first deep trench structure adjacent to the PN junction. An area via which photons impinge is provided, the PN junction extending substantially vertically with respect to the area. An avalanche diode array can be formed to include a number of avalanche diodes.
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公开(公告)号：US20180106667A1
公开(公告)日：2018-04-19
申请号：US15592304
申请日：2017-05-11
Applicant: Mitsubishi Electric Corporation
Inventor： Yohei MIKAMI
CPC classification number: G01J1/0271 , G01J1/0214 , G01J1/0411 , G01J1/44 , G01J2001/4466 , G02B6/4206 , G02B6/4292 , H01L31/0203 , H01L31/107
Abstract: A semiconductor light reception module is provided with a stem, a cap covering the stem, a holder superimposed on the cap, and a receptacle inserted into the holder. The holder has a main body section covering the lens in the cap. An opening passing from the opposite side of the cap through the main body section and reaching the lens is provided in the main body section of the holder. A fixing screw is inserted into a screw hole provided in the holder and a screw tip of a screw main body section of the fixing screw abuts against a side surface of the receptacle.
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Patent Agency Ranking
公开(公告)号：US20180094971A1
公开(公告)日：2018-04-05
申请号：US15689267
申请日：2017-08-29
Inventor： DAVID M. RUTTER , ALAN H. BAND
CPC classification number: G01J1/0228 , G01J1/08 , G01J1/44 , G01J2001/442 , G01J2001/444 , G01J2001/4466
Abstract: A protector to protect a photon detector includes: a pulse rate comparator and a latcher, wherein the latcher latches to a set signal from the pulse rate comparator and protects the photon detector from detecting photons when the latch signal includes a latch protect level.
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公开(公告)号：US09882069B2
公开(公告)日：2018-01-30
申请号：US14872815
申请日：2015-10-01
Applicant: Realtek Semiconductor Corp.
Inventor： Shih-Wei Wang
CPC classification number: H01L31/02027 , G01J1/44 , G01J2001/444 , G01J2001/4466
Abstract: A biasing voltage generating circuit for generating a required reverse biasing voltage of an avalanche photodiode (APD) includes: a boost power converter configured to operably convert an input voltage into a higher output voltage according to a feedback signal and a reference signal, and to apply the output voltage to be a reverse biasing voltage of the APD; a reference signal generating circuit configured to operably generate the reference signal; and a control circuit. The control circuit includes: a signal sensing circuit configured to operably generate a sensed signal corresponding to an output current of the APD; an analog-to-digital converter (ADC) configured to operably convert the sensed signal into a digital signal; and a processing circuit configured to operably adjust the feedback signal or the reference signal according to the digital signal to thereby control the boost power converter to adjust the output voltage.
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公开(公告)号：US20180026145A1
公开(公告)日：2018-01-25
申请号：US15551099
申请日：2015-12-14
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Shogo KAMAKURA , Ryuta YAMADA , Kenichi SATO
IPC: H01L31/02 , G01J1/02 , H01L23/00 , H01L31/0203 , H01L31/0232 , H01L31/107 , G01J1/44 , H01L27/144
CPC classification number: H01L31/02005 , G01J1/02 , G01J1/44 , G01J2001/4466 , G01J2001/448 , H01L24/32 , H01L24/48 , H01L24/73 , H01L27/1446 , H01L31/02027 , H01L31/0203 , H01L31/02322 , H01L31/10 , H01L31/107 , H01L2224/05554 , H01L2224/32227 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/10155 , H01L2924/12043 , H01L2924/30105 , H04N5/369 , H01L2924/00014
Abstract: A semiconductor substrate includes a first region in which a plurality of pixels are disposed and a second region located inside the first region to be surrounded by the first region when viewed from a direction in which a principal surface and a principal surface oppose each other. A through-hole penetrating through the semiconductor substrate is formed in the second region of the semiconductor substrate. An electrode disposed on a side of the principal surface of the semiconductor substrate and electrically connected to the plurality of pixels and an electrode disposed on a side of a principal surface of a mount substrate are connected to each other via a bonding wire inserted through the through-hole.
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公开(公告)号：US20170357061A1
公开(公告)日：2017-12-14
申请号：US15442958
申请日：2017-02-27
Applicant: Kabushiki Kaisha Toshiba
Inventor： Andrew James SHIELDS , Zakaria MOKTADIR
CPC classification number: G02B6/4203 , G01J1/0425 , G01J1/44 , G01J2001/442 , G01J2001/4466 , G02B6/02042 , G02B6/4295 , H04B10/70 , H04L9/0852
Abstract: A photon detection device, configured to couple to a multicore optical fibre, the device comprising a plurality of detection regions, each detection region being arranged to align with just a single core of the multicore optical fibre when the device is coupled to the multicore optical fibre.
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公开(公告)号：US20170356797A1
公开(公告)日：2017-12-14
申请号：US15689682
申请日：2017-08-29
Applicant: AT&T Intellectual Property I, L.P.
Inventor： Michael Brodsky , Cristian Antonelli , Jungmi Oh
CPC classification number: G01J1/44 , G01J1/08 , G01J1/42 , G01J2001/442 , G01J2001/4466
Abstract: Operational parameters of a single-photon detector are determined with a continuous wave laser source. At a fixed trigger, a dark count probability and a series of count probabilities at different optical powers are determined. A particular optical power is selected by using a wide-range variable attenuator to attenuate the optical power of the continuous wave laser. The dark count probability and the count probabilities are determined for different trigger rates. The operational parameters include efficiency, afterpulsing constant, and detrap time. The operational parameters are computed by fitting the computed dark count probabilities and count probabilities to a user-defined relationship.
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