公开(公告)号：US20050062389A1

公开(公告)日：2005-03-24

申请号：US10833803

申请日：2004-04-28

Applicant: Jimmy Davidson ,  Wang Kang ,  David Kerns ,  Mickey Howell

Inventor： Jimmy Davidson ,  Wang Kang ,  David Kerns ,  Mickey Howell

IPC: G01L9/00 ,  G01P15/08 ,  H01J1/30 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J19/02 ,  H01J19/24 ,  H01J31/12

CPC classification number: H01J9/025 ,  B82Y10/00 ,  G01L9/0041 ,  G01L9/0047 ,  G01P15/0802 ,  G01P15/0894 ,  G01P2015/0828 ,  H01J1/3042 ,  H01J1/3044 ,  H01J3/022 ,  H01J31/127 ,  H01J2201/30407 ,  H01J2201/30457

Abstract: Diamond microtip field emitters are used in triode vacuum microelectronic devices, sensors and displays. Diamond triode devices having integral anode and grid structures can be fabricated. Ultra-sharp tips are formed on the emitters in a fabrication process in which diamond is deposited into mold cavities in a two-step deposition sequence. During deposition of the diamond, the carbon graphite content is carefully controlled to enhance emission performance. The tips or the emitters are treated by post-fabrication processes to further enhance performance.

Abstract translation: 金刚石微尖端场发射器用于三极管真空微电子器件，传感器和显示器。 可以制造具有整体阳极和栅格结构的金刚石三极管器件。 在制造工艺中在发射体上形成超尖尖，其中金刚石以两步沉积顺序沉积到模腔中。 在沉积金刚石期间，仔细控制碳石墨含量以增强排放性能。 尖端或发射器通过后制造处理来进一步提高性能。

公开(公告)号：US20050023951A1

公开(公告)日：2005-02-03

申请号：US10928566

申请日：2004-08-26

Applicant: David Cathey

Inventor： David Cathey

IPC: H01J1/304 ,  H01J9/02 ,  H01J19/10

CPC classification number: H01J1/3044 ,  H01J1/3042 ,  H01J9/025 ,  H01J2201/30403 ,  Y10S148/116 ,  Y10S148/172 ,  Y10S438/978

Abstract: Electron emitters and a method of fabricating emitters which have a concentration gradient of impurities, such that the highest concentration of impurities is at the apex of the emitters and decreases toward the base of the emitters. The method comprises the steps of doping, patterning, etching, and oxidizing the substrate, thereby forming the emitters having impurity gradients.

Abstract translation: 电子发射体和制造具有杂质浓度梯度的发射体的方法，使得最高浓度的杂质位于发射体的顶点并朝向发射体的基底减小。 该方法包括掺杂，图案化，蚀刻和氧化衬底的步骤，从而形成具有杂质梯度的发射体。

公开(公告)号：US06812654B2

公开(公告)日：2004-11-02

申请号：US10399738

申请日：2003-09-02

Applicant: Keisuke Koga ,  Toru Kawase

Inventor： Keisuke Koga ,  Toru Kawase

IPC: G09G104

CPC classification number: H01J29/481 ,  H01J1/3042

Abstract: The object of the present invention is to provide a field emission device that emits an electron beam bundle whose spot profile on a display screen has as little distortion as possible, and that maintains a stable electron emission property regardless of the length of a driving time, a CRT apparatus equipped with such field emission device, and a production method of such CRT apparatus. The field emission device (10) has, on a surface of a substrate (11), a plurality of cathode electrodes (12) parallel to each other, an insulation layer (13), and a plurality of extraction electrodes (14) parallel to each other, in the stated order, the cathode electrodes (12) and the extraction electrodes (14) being orthogonal to each other and so yielding a plurality of crossover regions. At the crossover regions, electron emission zones (15) each made up of four emitters (16) are formed. One or more of the electron emission zones (15) are selected by controlling the applied voltage between the cathode electrodes (12) and the extraction electrodes (14), according to an area of the display screen to be irradiated with the electron beam bundle.

Abstract translation: 本发明的目的是提供一种发射电子束束的场致发射器件，其中显示屏上的光斑轮廓具有尽可能小的失真，并且保持稳定的电子发射特性，而与驱动时间的长度无关， 配备有这种场发射装置的CRT装置以及这种CRT装置的制造方法。场发射装置（10）在基板（11）的表面上具有彼此平行的多个阴极电极（12） ，绝缘层（13）和多个彼此平行的提取电极（14），所述阴极电极（12）和提取电极（14）按顺序相互正交，从而产生多个 在交叉区域中，形成由四个发射体（16）构成的电子发射区（15）。 根据要用电子束束照射的显示屏的面积，通过控制阴极电极（12）和提取电极（14）之间的施加电压来选择一个或多个电子发射区（15）。

公开(公告)号：US20040169458A1

公开(公告)日：2004-09-02

申请号：US10791817

申请日：2004-03-04

Applicant: DELTA OPTOELECTRONICS, INC.

Inventor： Yui-Shin Fran ,  Lai-Cheng Chen

IPC: H01J001/62 ,  H01J063/04

CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J9/025 ,  H01J29/085 ,  H01J2201/30469 ,  Y10S977/952

Abstract: A carbon nanotube (CNT) field emission display has a cathode substrate having a cathode layer patterned on a glass substrate. The surface of the cathode layer is defined as a plurality of electron-emitting areas apart from each other, and a plurality of CNT structures is grown on the plurality of electron-emitting areas respectively.

公开(公告)号：USRE38561E1

公开(公告)日：2004-08-03

申请号：US10408871

申请日：2003-04-08

Applicant: Till Keesmann ,  Hubert Grosse-Wilde

Inventor： Till Keesmann ,  Hubert Grosse-Wilde

IPC: H01J102

CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J2201/30469

Abstract: A field emission cathode device consisting of an electrically conducting material and with a narrow, rod-shaped geometry or a knife edge, to achieve a high amplification of the electric field strength is characterized in that the electron-emitting part of the field emission cathode at least partly has preferred cylindrical host molecules and/or compounds with host compounds and/or cylindrical atomic networks, possibly with end caps with diameters measuring in the nanometer range.

公开(公告)号：US06702637B2

公开(公告)日：2004-03-09

申请号：US10048148

申请日：2002-01-25

Applicant: Choon-Sup Lee ,  Jae-Duk Lee ,  Chul-Hi Han

Inventor： Choon-Sup Lee ,  Jae-Duk Lee ,  Chul-Hi Han

IPC: H01J912

CPC classification number: H01J1/304 ,  H01J1/3042 ,  H01J9/022

Abstract: The present invention relates to a method of forming a small gap using CMP and a method for manufacturing a lateral FED. In the present invention, a small gap is determined by the thickness of an oxide film, and so uniform small gaps of about 100 Å that have been impossible to attain with the art of prior lithography can be formed with repeatability. Prior lateral field emission devices have the problem of repeatability in forming a gap for field emission because they are fabricated by means of a thermal stress method or an electrical stress method. But if the method of forming a small gap according to the present invention is used to fabricate a lateral FED, a FED can be made that has low voltage drive and high current drive characteristics and uniform field emission characteristics.

Abstract translation: 本发明涉及使用CMP形成小间隙的方法以及制造横向FED的方法。 在本发明中，通过氧化膜的厚度来确定小的间隙，并且可以以重现性形成与现有的光刻技术无法达到的均匀的大约的小间隙。 现有的横向场致发射装置在形成场发射间隙时具有重复性的问题，因为它们是通过热应力法或电应力法制造的。 但是，如果使用根据本发明的形成小间隙的方法来制造横向FED，则可以制造具有低电压驱动和高电流驱动特性以及均匀场致发射特性的FED。

公开(公告)号：US20030160556A1

公开(公告)日：2003-08-28

申请号：US10223625

申请日：2002-08-20

Inventor： Young-Chul Choi ,  Ji-Hoon Ahn ,  Hyek-Bok Rhee ,  Dong-Hee Han

IPC: H01J001/30 ,  H01J001/00

CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30469

Abstract: The present invention provides a cold cathode electron source and a method for manufacturing the cold cathode electron source. The cold cathode electron source includes a substrate on which are deposited a catalyst metal layer, an insulation layer, and a gate metal layer; a cavity section formed through the catalyst metal layer, the insulation layer, and the gate metal layer; and an emitter realized through a plurality of carbon nanotubes, which are grown from walls of the catalyst metal layer exposed in the cavity section and which have long axes parallel to the substrate. The method includes depositing a catalyst metal layer, an insulation layer, and a gate metal layer on a substrate; forming a cavity section by removing a portion of the gate metal layer, the insulation layer, and the catalyst metal layer using a photolithography process; and forming an emitter by mounting the substrate on a chemical vapor deposition reactor and growing carbon nanotubes in a low temperature atmosphere of 500null800 degrees Celsius (null C.).

Abstract translation: 本发明提供一种冷阴极电子源及其制造方法。 冷阴极电子源包括沉积有催化剂金属层，绝缘层和栅极金属层的基板; 通过催化剂金属层，绝缘层和栅极金属层形成的空腔部分; 以及通过多个碳纳米管实现的发射体，其从暴露在空腔部分中的具有平行于衬底的长轴的催化剂金属层的壁生长。 该方法包括在衬底上沉积催化剂金属层，绝缘层和栅极金属层; 通过使用光刻工艺去除栅极金属层，绝缘层和催化剂金属层的一部分来形成空腔部分; 并通过将基板安装在化学气相沉积反应器上并在500〜800摄氏度（℃）的低温气氛中生长碳纳米管来形成发射体。

公开(公告)号：US20030111946A1

公开(公告)日：2003-06-19

申请号：US10024164

申请日：2001-12-18

Inventor： Albert Alec Talin ,  Kenneth Andrew Dean ,  Shawn M. O'Rourke ,  Bernard F. Coll ,  Matthew Stainer ,  Ravichandran Subrahmanyan

IPC: H01J001/05 ,  H01J019/06

CPC classification number: C25D13/02 ,  B82Y10/00 ,  B82Y30/00 ,  H01J1/3042 ,  H01J9/025

Abstract: A method of fabricating a field emission device cathode using electrophoretic deposition of carbon nanotubes in which a separate step of depositing a binder material onto a substrate, is performed prior to carbon nanotube particle deposition. First, a binder layer is deposited on a substrate from a solution containing a binder material. The substrate having the binder material deposited thereon is then transferred into a carbon nanotube suspension bath allowing for coating of the carbon nanotube particles onto the substrate. Thermal processing of the coating transforms the binder layer properties which provides for the adhesion of the carbon nanotube particles to the binder material.

Abstract translation: 在碳纳米管颗粒沉积之前进行使用碳纳米管的电泳沉积来制造场发射器件阴极的方法，其中在衬底上沉积粘合剂材料的单独步骤。 首先，将粘合剂层从含有粘合剂材料的溶液沉积在基材上。 然后将其上沉积有粘合剂材料的基材转移到允许将碳纳米管颗粒涂覆到基材上的碳纳米管悬浮液浴中。 涂层的热处理改变粘合剂层性质，其提供了将碳纳米管颗粒粘附到粘合剂材料上。

公开(公告)号：US06559442B1

公开(公告)日：2003-05-06

申请号：US09551563

申请日：2000-04-18

Applicant: Didier Pierrejean

Inventor： Didier Pierrejean

IPC: B01D5944

CPC classification number: H01J3/022 ,  H01J1/20 ,  H01J1/3042 ,  H01J2201/196 ,  H01J2201/30403

Abstract: A system in accordance with the invention which generates electrons by means of a field-emission cathode comprises an array of electron-emitting micropoints associated with a grid and carried by a substrate with integral heater means for heating the micropoints to a temperature in the range approximately 300° C. to approximately 400° C. and maintaining them at that temperature during emission of electrons. The cathode can therefore function at higher residual air pressures with no risk of breakdown.

Abstract translation: 根据本发明的通过场发射阴极产生电子的系统包括与栅格相关联的电子发射微点阵列，并由具有用于将微点加热到大约范围内的温度的整体加热器装置的衬底承载 300℃至约400℃，并在电子发射期间将其保持在该温度。 因此，阴极可以在更高的残留空气压力下起作用，而不会有击穿的危险。

公开(公告)号：US06492966B1

公开(公告)日：2002-12-10

申请号：US08281912

申请日：1994-07-27

Applicant: Alton O. Christensen

Inventor： Alton O. Christensen

IPC: G09G330

CPC classification number: H01J1/3042 ,  H01J2201/30403 ,  H01J2201/319

Abstract: Triode pixel devices and complementary triode logic devices for control of the pixel devices are disclosed. The pixel and logic devices are integrally fabricated in arrays suitable for full color flat display panels. Both pixel and logic elements are operated in a gate controlled avalanche mode. Pixel elements are formed from organic or inorganic electroluminescent (EL) materials ohmically contacted by low work function metal. The depletion region necessary for controlling EL intensity or preventing EL avalanche is affected by potentials to a gate element injected into the EL material. The shape of the gate element multiplies the field produced by the gate potential. Luminescence is directly viewed from the brighter, lateral EL emission not available in the prior art. The complementary logic devices are formed from separate depositions of n-type and p-type silicon with their respective gates connected in common. A manufacturing process to produce economical full color, large area, flat-panel, displays of high pixel density and redundancy is described. Small area high pixel density displays suitable for head-mounted military, avionic, and virtual reality display products are also discussed.

Abstract translation: 公开了用于控制像素装置的三极体像素装置和互补三极管逻辑装置。 像素和逻辑器件被整体地制成阵列，适用于全彩平板显示面板。 像素和逻辑元件都以栅极控制的雪崩模式工作。 像素元件由低功函数金属欧姆接触的有机或无机电致发光（EL）材料形成。 用于控制EL强度或防止EL雪崩所需的耗尽区受到注入到EL材料中的栅极元件的电位的影响。 栅极元件的形状将由栅极电位产生的场相乘。 从现有技术中不可获得的较亮的侧向EL发射中直接观察发光。 互补逻辑器件由n型和p型硅的分开沉积形成，其相应的栅极共同连接。 描述了生产经济的全彩色，大面积，平板，高像素密度和冗余的显示器的制造工艺。 还讨论了适用于头戴式军用，航空电子和虚拟现实显示产品的小面积高像素密度显示器。