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    Power supply module and charged particle beam device
    1.
    发明授权
    Power supply module and charged particle beam device 有权

    公开(公告)号：US12132411B2

    公开(公告)日：2024-10-29

    申请号：US17763840

    申请日：2019-10-07

    Applicant: Hitachi High-Tech Corporation

    Inventor： Ryo Kadoi ,  Wen Li ,  Naoya Ishigaki

    IPC: H02M7/10 ,  H01J19/02 ,  H01J37/24 ,  H02M1/14 ,  H02M7/06 ,  H05H5/04

    CPC classification number: H02M7/103 ,  H01J19/02 ,  H01J37/241 ,  H02M1/14 ,  H02M7/062 ,  H02M7/10 ,  H05H5/045 ,  H01J2203/02

    Abstract: The invention provides a power supply module and a charged particle beam device that are capable of reducing ripple noise. A high-voltage generation circuit 101 includes booster circuits CPa and CPb of two systems that are configured to be symmetrical to each other, and performs a boosting operation by using a capacitive element and a diode in the booster circuits CPa and CPb of the two systems. The high-voltage generation circuit is housed in a housing and a reference power supply voltage is applied thereto. A left electrode 102a is fixedly provided in the vicinity of one of the booster circuits CPa and CPb of the two systems in the housing, and a right electrode 102b is fixedly provided in the vicinity of the other of the booster circuits CPa and CPb of the two systems in the housing. A stray capacitance adjustment circuit 100a adjusts capacitance values of stray capacitances of the booster circuits CPa and CPb of the two systems by electrically controlling an electrical connection characteristic between the left electrode 102a and the reference power supply voltage 104 and an electrical connection characteristic between the right electrode 102b and the reference power supply voltage 104.

    SURFACE FIELD ELECTRON EMITTERS USING CARBON NANOTUBE YARN AND METHOD OF FABRICATING CARBON NANOTUBE YARN THEREOF
    2.
    发明申请
    SURFACE FIELD ELECTRON EMITTERS USING CARBON NANOTUBE YARN AND METHOD OF FABRICATING CARBON NANOTUBE YARN THEREOF 有权
    使用碳纳米管的表面场电子发射体及其制备碳纳米管的方法

    公开(公告)号：US20100181896A1

    公开(公告)日：2010-07-22

    申请号：US12389280

    申请日：2009-02-19

    Applicant: Cheol-Jin Lee ,  Seung-Il Jung ,  Guohai Chen

    Inventor： Cheol-Jin Lee ,  Seung-Il Jung ,  Guohai Chen

    IPC: H01J19/02 ,  H01J1/02 ,  D01F9/12 ,  D02G3/02 ,  B82B1/00 ,  B82B3/00

    CPC classification number: H01J1/304 ,  D06M10/005 ,  D06M10/008 ,  D06M2101/40 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2329/0455

    Abstract: Surface field electron emitters using a carbon nanotube yarn and a method of fabricating the same are disclosed. To fabricate the carbon nanotube yarn for use in fabrication of simple and efficient carbon nanotube field electron emitters, the method performs densification of the carbon nanotube yarn during rotation of a plying unit and heat treatment of the carbon nanotube yarn that has passed through the plying unit without using organic or inorganic binders or polymer pastes. The method fabricates the carbon nanotube yarn with excellent homogeneity and reproducibility through a simple process. The carbon nanotube yarn-based surface field electron emitters can be applied to various light emitting devices.

    Abstract translation: 公开了使用碳纳米管纱线的表面场电子发射体及其制造方法。 为了制造用于制造简单且有效的碳纳米管场致电子发射体的碳纳米管纱线，该方法在穿戴单元的旋转期间进行碳纳米管纱线的致密化，并且已经通过穿戴单元的碳纳米管纱线的热处理 而不使用有机或无机粘合剂或聚合物浆料。 该方法通过简单的方法制备出具有优异均匀性和再现性的碳纳米管纱线。 碳纳米管纱基表面场电子发射体可以应用于各种发光器件。

    Nitrogen and phosphorus doped amorphous silicon as resistor for field emission display device baseplate
    4.
    发明授权
    Nitrogen and phosphorus doped amorphous silicon as resistor for field emission display device baseplate 失效
    氮和磷掺杂的非晶硅作为场致发射显示器件基板的电阻器

    公开(公告)号：US06911766B2

    公开(公告)日：2005-06-28

    申请号：US10644443

    申请日：2003-08-19

    Applicant: Kanwal K. Raina ,  Benham Moradi

    Inventor： Kanwal K. Raina ,  Benham Moradi

    IPC: H01J1/02 ,  H01J1/304 ,  H01J1/62 ,  H01J9/02 ,  H01J19/02 ,  H01J63/04

    CPC classification number: H01J1/30 ,  H01J1/304 ,  H01J1/3044 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/319 ,  H01J2329/00

    Abstract: Described herein is a resistor layer for use in field emission display devices and the like, and its method of manufacture. The resistor layer is an amorphous silicon layer doped with nitrogen and phosphorus. Nitrogen concentration in the resistor layer is preferably between about 5 and 15 atomic percent. The presence of nitrogen and phosphorus in the silicon prevents diffusion of Si atoms into metal conductive layers such as aluminum, even up to diffusion and packaging temperatures. The nitrogen and phosphorus also prevent defects from forming at the boundary between the resistor layer and metal conductor. This leads to better control over shorting and improved resistivity in the resistor.

    Abstract translation: 这里描述的是用于场发射显示装置等的电阻层及其制造方法。 电阻层是掺杂有氮和磷的非晶硅层。 电阻层中的氮浓度优选为约5至15原子％。 硅中的氮和磷的存在防止Si原子扩散到金属导电层如铝中，甚至达到扩散和封装温度。 氮和磷还可以防止在电阻层和金属导体之间的边界处形成缺陷。 这导致更好地控制电阻器的短路和改善电阻率。

    Field emission element and process for manufacturing same
    6.
    发明授权
    Field emission element and process for manufacturing same 失效
    场致发射元件及其制造方法

    公开(公告)号：US5381069A

    公开(公告)日：1995-01-10

    申请号：US159114

    申请日：1993-11-30

    Applicant: Shigeo Itoh ,  Teruo Watanabe ,  Hisashi Nakata ,  Norio Nishimura ,  Junji Itoh ,  Seigo Kanemaru

    Inventor： Shigeo Itoh ,  Teruo Watanabe ,  Hisashi Nakata ,  Norio Nishimura ,  Junji Itoh ,  Seigo Kanemaru

    IPC: H01J9/02 ,  H01J1/304 ,  H01J3/02 ,  H01J19/24 ,  H01J21/10 ,  H01J19/02

    CPC classification number: H01J9/025 ,  H01J3/022

    Abstract: A field emission element in which the emitter has rectangular projections at its distal end capable of readily controlling the interval between electrodes in increments as small as sub-microns, in order to reduce the voltage at which the device starts field emission at the required level and to improve emission uniformity. An emitter (2,20), a collector (3,21) and a gate (5,22) are arranged on a substrate (1), which is formed with a recess (4) in proximity to the electrodes (2,3, 20,21) other than the gate (5). The gate (5) is provided in the recess (4).

    Abstract translation: 场致发射元件，其中发射器在其远端具有矩形突起，能够以小到亚微米的增量容易地控制电极之间的间隔，以便降低器件在所需电平下开始场发射的电压，以及 以提高排放均匀性。 发射极（2,20），集电极（3,21）和栅极（5,22）布置在衬底（1）上，衬底（1）上形成有靠近电极（2,3）的凹部 ，20,21），而不是门（5）。 门（5）设置在凹部（4）中。

    Cathode construction for linear beam tubes
    8.
    发明授权
    Cathode construction for linear beam tubes 失效
    线性束管阴极结构

    公开(公告)号：US4147953A

    公开(公告)日：1979-04-03

    申请号：US754001

    申请日：1976-12-27

    Applicant: Maurice Esterson

    Inventor： Maurice Esterson

    IPC: H01J3/02 ,  H01J19/02 ,  H01J23/065 ,  H01J1/46 ,  H01J1/52 ,  H01J19/38

    CPC classification number: H01J23/065 ,  H01J19/02 ,  H01J3/02

    Abstract: A linear beam tube is provided with a gridded electron gun in which a concave cathode surface is provided with concave channels from which electrons are emitted. The channels may be arranged as concentric annuli. In a preferred embodiment the channels extend radially outwards from the center of the cathode to minimize the effects of temperature distortion. The cathode is provided with a shadow grid and a control grid is spaced from and aligned therewith.

    Abstract translation: 线性束管设置有格栅电子枪，其中凹阴极表面设置有从其发射电子的凹通道。 通道可以布置为同心环。 在优选实施例中，通道从阴极的中心径向向外延伸，以最小化温度变形的影响。 阴极设置有阴影网格，并且控制栅格与其隔开并与之对齐。

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