公开(公告)号：US20040104658A1

公开(公告)日：2004-06-03

申请号：US10719214

申请日：2003-11-20

Applicant: Micron Technology, Inc.

Inventor： Behnam Moradi ,  Tian Zhang ,  John Lee

IPC: H01J001/00

CPC classification number: H01J1/3044 ,  H01J2201/30426 ,  H01J2201/30446 ,  H01J2329/00

Abstract: A structure and method are provided to inhibit degradation to the electron beam of a field emitter device by coating the field emitter tip with a substance or a compound. The substance or compound acts in the presence of outgassing to inhibit such degradation. In one embodiment, the substance or compound coating the field emitter tip is stable in the presence of outgassing. In another embodiment, the substance or compound decomposes at least one matter in the outgassing. In yet another embodiment, the substance or compound neutralizes at least one matter in the outgassing. In a further embodiment, the substance or compound brings about a catalysis in the presence of outgassing.

公开(公告)号：US20030155851A1

公开(公告)日：2003-08-21

申请号：US10378650

申请日：2003-03-05

Inventor： Pehr Pehrsson ,  James Butler

IPC: H01J001/02

CPC classification number: B82Y10/00 ,  H01J1/3044 ,  H01J1/312 ,  H01J9/022 ,  H01J9/025 ,  H01J2201/30446 ,  H01J2201/30457

Abstract: A method for fabricating an electron emitter is provided. This emitter structure may be used to form individual emitters or arrays of emitters. The method is comprised of implanting energetic ions into a diamond lattice to form cones or other continuous regions of damaged diamond. These regions are more electrically conducting than the surrounding diamond lattice, and have locally sharp tips at or near the point of entry of the ion into the diamond. The tips may then also be additionally coated with a layer of a wide band-gap semiconductor. An electrically conducting material may also be placed in proximity to the tips to generate an electric field sufficient to extract electrons from the conducting tips into either the region above the surface, or into the wide band-gap semiconductor layer in contact with the tips. Electrical contact is made to the electrically conducting damage tracks and the electrical circuit may be completed with an electrically conducting material on the surface of the wide band-gap semiconductor or diamond, or in the ambient above the surface of the emitter. The surface of the wideband gap semiconductor or diamond may be chemically modified to enhance the emission of electrons from the surface.

Abstract translation: 提供一种制造电子发射器的方法。 该发射器结构可以用于形成发射器的单独发射器或阵列。 该方法包括将能量离子注入到金刚石晶格中以形成损坏金刚石的锥体或其它连续区域。 这些区域比周围的金刚石晶格更具导电性，并且在离子进入金刚石的位置处或附近具有局部尖锐的尖端。 然后可以另外涂覆一层宽带隙半导体的尖端。 还可以将导电材料放置在靠近尖端处以产生足以将电子从导电尖端引入到表面上方的区域中的电场，或者与尖端接触的宽带隙半导体层中。 对导电损伤轨道进行电接触，并且电路可以在宽带隙半导体或金刚石的表面上或在发射器表面上的环境中的导电材料完成。 宽带隙半导体或金刚石的表面可以被化学修饰以增强从表面发射电子。

公开(公告)号：US20030102793A1

公开(公告)日：2003-06-05

申请号：US10258601

申请日：2002-11-05

Inventor： Takuya Komoda ,  Koichi Aizawa ,  Yoshiaki Honda ,  Tsutomu Ichihara ,  Yoshifumi Watabe ,  Takashi Hatai ,  Toru Baba ,  Yoshiyuki Takegawa

IPC: H01J019/06 ,  H01J001/05

CPC classification number: B82Y10/00 ,  H01J1/304 ,  H01J1/312 ,  H01J9/022 ,  H01J9/025 ,  H01J2201/30446 ,  H01J2201/3125

Abstract: In a field emission-type electron source (10), a strong field drift layer (6) and a surface electrode (7) consisting of a gold thin film are provided on an n-type silicon substrate (1). An ohmic electrode (2) is provided on the back surface of the n-type silicon substrate (1). A direct current voltage is applied so that the surface electrode (7) becomes positive in potential relevant to the ohmic electrode (2). In this manner, electrons injected from the ohmic electrode (2) into the strong field drift layer (6) via the n-type silicon substrate (6) drift in the strong field drift layer (6), and is emitted to the outside via the surface electrode (7). The strong field drift layer (6) has: a number of semiconductor nanocrystals (63) of nano-meter order formed partly of a semiconductor layer configuring the strong field drift layer (6); and a number of insulating films (64) each of which is formed on the surface of each of the semiconductor nanocrystals (63) and each having film thickness to an extent such that an electron tunneling phenomenon occurs.

Abstract translation: 在场致发射型电子源（10）中，在n型硅衬底（1）上设置强电场漂移层（6）和由金薄膜构成的表面电极（7）。 在n型硅衬底（1）的背面设有欧姆电极（2）。 施加直流电压，使得表面电极（7）在与欧姆电极（2）相关的电位变为正。 以这种方式，经由n型硅衬底（6）从欧姆电极（2）注入强场漂移层（6）的电子在强场漂移层（6）中漂移，并经由 表面电极（7）。 强场漂移层（6）具有：部分地由构成强场漂移层（6）的半导体层形成的多个纳米级的半导体纳米晶体（63）; 以及多个绝缘膜（64），其各自形成在每个半导体纳米晶体（63）的表面上，并且各自具有使得发生电子隧道现象的程度的膜厚度。

公开(公告)号：US20030067259A1

公开(公告)日：2003-04-10

申请号：US10254504

申请日：2002-09-26

Inventor： Michiyo Nishimura

IPC: H01J001/00

CPC classification number: B82Y10/00 ,  H01J1/304 ,  H01J31/127 ,  H01J2201/30446 ,  H01J2201/30457 ,  H01J2201/30469

Abstract: An electron-emitting device having a small electron beam size is proposed. In order to provide a high definition image display device having high image quality by utilizing this type of electron-emitting device and an electron source, a cathode electrode (2) has an opening which is trenched in a portion thereof, and further, the depth at which the opening is trenched is deep at a peripheral portion of the opening bottom face, and shallow at a central portion of the opening bottom face. A surface of an electron-emitting material is formed in a portion deeper than a boundary surface between the cathode electrode and an insulating layer.

Abstract translation: 提出了具有小电子束尺寸的电子发射器件。 为了通过利用这种类型的电子发射器件和电子源来提供具有高图像质量的高分辨率图像显示装置，阴极电极（2）具有在其一部分中被沟槽的开口，此外，深度 开口被挖槽的开口底面的周边部分是深的，并且在开口底面的中心部分处浅。 电子发射材料的表面形成在比阴极和绝缘层之间的边界面更深的部分。

公开(公告)号：US06469425B1

公开(公告)日：2002-10-22

申请号：US09501241

申请日：2000-02-10

Applicant: Tadashi Sakai ,  Kazuya Nakayama ,  Li Zhang ,  Gehan Anil Joseph Amaratunga ,  Ioannis Alexandrou ,  Mark Baxendale ,  Nalin Rupasinghe

Inventor： Tadashi Sakai ,  Kazuya Nakayama ,  Li Zhang ,  Gehan Anil Joseph Amaratunga ,  Ioannis Alexandrou ,  Mark Baxendale ,  Nalin Rupasinghe

IPC: H01J130

CPC classification number: H01J9/022 ,  H01J1/30 ,  H01J2201/30446

Abstract: An electron emission film includes a matrix consisting essentially of amorphous carbon and fullerene-like structures consisting essentially of a two-dimensional network of six-membered carbon rings. The fullerene-like structures are dispersed in the matrix and partially project from the matrix. The weight ratio of amorphous carbon to the fullerene-like structures is about 50:50 to 5:95. Amorphous carbon contains nitrogen acting as a donor at a concentration of about 4×10−7 to 10 atom %.

Abstract translation: 电子发射膜包括基本上由无定形碳和富勒烯样结构组成的基体，其基本上由六元碳环的二维网络组成。 富勒烯样结构分散在基质中并部分地从基质上突出。 无定形碳与富勒烯样结构的重量比为约50:50至5:95。 无定形碳含有以约4×10-7至10原子％浓度的作为供体的氮。

公开(公告)号：US20020136682A1

公开(公告)日：2002-09-26

申请号：US10098396

申请日：2002-03-18

Applicant: GSI CREOS CORPORATION

Inventor： Takashi Yanagisawa ,  Morinobu Endo

IPC: D01F009/12

CPC classification number: H01J1/304 ,  H01J2201/30446 ,  Y10T428/2918

Abstract: A carbon fiber for a field electron emitter has a coaxial stacking morphology of truncated conical tubular graphene layers, each of which includes a hexagonal carbon layer and has a large ring end and a small ring end at opposite ends in the axial direction. The edges of the hexagonal carbon layers are exposed on at least part of the large ring ends. Since all the exposed edges function as electron emission tips, a large amount of emission current can be obtained.

Abstract translation: 用于场电子发射器的碳纤维具有截头圆锥形管状石墨烯层的同轴堆叠形态，每个都包括六边形碳层，并且在轴向相对端具有大的环形端和小的环形端。 六角形碳层的边缘暴露在大环端的至少一部分上。 由于所有的曝光边缘都用作电子发射尖端，所以可以获得大量的发射电流。

公开(公告)号：US06388366B1

公开(公告)日：2002-05-14

申请号：US08438118

申请日：1995-05-08

Applicant: Roger W. Pryor

Inventor： Roger W. Pryor

IPC: C01L300

CPC classification number: H01J1/30 ,  C01B21/0605 ,  H01J2201/30446

Abstract: A cold cathode is formed of carbon nitride. The cathode may include layers of boron nitride and diamond underlying the carbon nitride. The cathodes are made by reactive laser ablation or by sputtering. Electronic devices utilizing the carbon nitride cathodes are also described.

Abstract translation: 冷阴极由碳氮化物形成。 阴极可以包括氮化碳层和碳纳米管下面的金刚石层。 阴极由反应激光烧蚀或溅射制成。 还描述了利用碳氮化物阴极的电子器件。

公开(公告)号：US06329745B2

公开(公告)日：2001-12-11

申请号：US09771861

申请日：2001-01-29

Applicant: Donald E. Patterson ,  Keith D. Jamison

Inventor： Donald E. Patterson ,  Keith D. Jamison

IPC: H01J102

CPC classification number: H01J9/025 ,  H01J1/3042 ,  H01J2201/30446

Abstract: An electron field emission device is provided by placing a substrate in a reactor, heating the substrate and supplying a mixture of hydrogen and a carbon-containing gas at a concentration of about 8 to 13 per cent to the reactor while supplying energy to the mixture of gases near the substrate for a time to grow a first layer of carbon-based material to a thickness greater than about 0.5 micrometers, subsequently reducing the concentration of the carbon-containing gas and continuing to grow a second layer of carbon-based material, the second layer being much thicker than the first layer. The substrate is subsequently removed from the first layer and an electrode is applied to the second layer. The surface of the substrate may be patterned before growth of the first layer to produce a patterned surface on the field emission device. The device is free-standing and can be used as a cold cathode in a variety of electronic devices such as cathode ray tubes, amplifiers and traveling wave tubes.

公开(公告)号：US5708327A

公开(公告)日：1998-01-13

申请号：US665566

申请日：1996-06-18

Applicant: John O. O'Boyle

Inventor： John O. O'Boyle

IPC: H01J1/304 ,  H01J19/24

CPC classification number: H01J1/3042 ,  H01J2201/30446

Abstract: A flat panel display device (50) includes magnetic field emitter elements (52). The emitter elements (52) include a dopant ferromagnetic material (56) used to produce a permanent magnet in the emitter elements (52). The permanent magnet in the emitter elements (52) generates a magnetic field (B) used to focus the electrons emitted from the tips of the emitter elements (52). The flat panel display device (50) further includes a voltage source (70) for producing an electric field (E) between a cathode electrode (54) having a gate electrode (58), and an anode electrode (60) having phosphor regions (62) disposed between black matrix regions (61). The magnetic field (B) provides a restoring magnetic force to collimate the electrons toward the phosphor regions (62) to produce a high brightness display.

Abstract translation: 平板显示装置（50）包括磁场发射体元件（52）。 发射极元件（52）包括用于在发射极元件（52）中产生永磁体的掺杂剂铁磁材料（56）。 发射体元件（52）中的永磁体产生用于聚焦从发射体元件（52）的尖端发射的电子的磁场（B）。 平板显示装置（50）还包括用于在具有栅电极（58）的阴极（54）和具有荧光体区域（58）的阳极电极（60）之间产生电场（E）的电压源 62）设置在黑矩阵区域（61）之间。 磁场（B）提供恢复磁力以将电子准直到荧光体区域（62）以产生高亮度显示。

公开(公告)号：US5361015A

公开(公告)日：1994-11-01

申请号：US011006

申请日：1993-01-29

Applicant: Masahiko Okunuki ,  Akira Suzuki ,  Isamu Shimoda ,  Tetsuya Kaneko ,  Takeo Tsukamoto ,  Toshihiko Takeda ,  Takao Yonehara ,  Takeshi Ichikawa

Inventor： Masahiko Okunuki ,  Akira Suzuki ,  Isamu Shimoda ,  Tetsuya Kaneko ,  Takeo Tsukamoto ,  Toshihiko Takeda ,  Takao Yonehara ,  Takeshi Ichikawa

IPC: H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J31/12 ,  H01J7/06 ,  H01L21/02

CPC classification number: H01J9/025 ,  H01J1/3042 ,  H01J3/022 ,  H01J31/127 ,  H01J2201/30446

Abstract: A multi type electron emission element comprises a plurality of electrodes formed on a deposition surface of an insulating material and each having a conical portion of a single crystal, an insulating layer formed on the deposition surface and having openings respectively centered on the conical portions, and a deriving electrodes, part of which is formed near at least the conical portions, the deriving electrode being formed on the insulating layer.

Abstract translation: 多型电子发射元件包括形成在绝缘材料的沉积表面上并且各自具有单晶的锥形部分的多个电极，形成在沉积表面上并具有分别以锥形部分为中心的开口的绝缘层，以及 导电电极，其一部分形成在至少锥形部分附近，导电电极形成在绝缘层上。