公开(公告)号：US20180005803A1

公开(公告)日：2018-01-04

申请号：US15708090

申请日：2017-09-18

Applicant: Lam Research Corporation

Inventor： Zhongkui Tan ,  Qian Fu ,  Ying Wu ,  Qing Xu

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/308

CPC classification number: H01J37/32146 ,  H01J37/32165 ,  H01J37/32422 ,  H01J2237/0656 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/308

Abstract: For a first period of time, a higher radiofrequency power is applied to generate a plasma in exposure to a substrate, while applying low bias voltage at the substrate level. For a second period of time, a lower radiofrequency power is applied to generate the plasma, while applying high bias voltage at the substrate level. The first and second periods of time are repeated in an alternating and successive manner for an overall period of time necessary to produce a desired effect on the substrate. In some embodiments, the first period of time is shorter than the second period of time such that on a time-averaged basis the plasma has a greater ion density than radical density. In some embodiments, the first period of time is greater than the second period of time such that on a time-averaged basis the plasma has a lower ion density than radical density.

公开(公告)号：US09767991B2

公开(公告)日：2017-09-19

申请号：US14932416

申请日：2015-11-04

Applicant: Lam Research Corporation

Inventor： Zhongkui Tan ,  Qian Fu ,  Ying Wu ,  Qing Xu

IPC: H01L21/306 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/308

CPC classification number: H01J37/32146 ,  H01J37/32165 ,  H01J37/32422 ,  H01J2237/0656 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/308

Abstract: For a first period of time, a higher radiofrequency power is applied to generate a plasma in exposure to a substrate, while applying low bias voltage at the substrate level. For a second period of time, a lower radiofrequency power is applied to generate the plasma, while applying high bias voltage at the substrate level. The first and second periods of time are repeated in an alternating and successive manner for an overall period of time necessary to produce a desired effect on the substrate. In some embodiments, the first period of time is shorter than the second period of time such that on a time-averaged basis the plasma has a greater ion density than radical density. In some embodiments, the first period of time is greater than the second period of time such that on a time-averaged basis the plasma has a lower ion density than radical density.

公开(公告)号：US20160260575A1

公开(公告)日：2016-09-08

申请号：US15059199

申请日：2016-03-02

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Moon Youn JUNG ,  Dong Hoon SONG ,  Jin Sun KIM

IPC: H01J37/06 ,  H01J37/244

CPC classification number: H01J37/06 ,  H01J3/024 ,  H01J2237/049 ,  H01J2237/061 ,  H01J2237/06325 ,  H01J2237/06366 ,  H01J2237/0656 ,  H01J2237/2482

Abstract: Provided may include an electron beam generator, an image apparatus including the same, and an optical apparatus. The optical apparatus includes a first and second laser apparatuses providing a first and second laser beams on a substrate, and a first optical system provided between the first and second laser apparatuses and the substrate to focus the first and second laser beams. The first and second laser beams overlap with each other generating an interference beam, thereby decreasing a spot size of the interference beam to be smaller than a wavelength of each of the first and second laser beams at a focal point.

Abstract translation: 可以提供电子束发生器，包括该电子束发生器的图像装置和光学装置。 光学装置包括在基板上提供第一和第二激光束的第一和第二激光装置，以及设置在第一和第二激光装置与基板之间以使第一和第二激光束聚焦的第一光学系统。 第一和第二激光束彼此重叠，产生干涉光束，从而将干涉光束的光点尺寸减小为小于焦点处的第一和第二激光束的波长的波长。

公开(公告)号：US20150170883A1

公开(公告)日：2015-06-18

申请号：US14418041

申请日：2013-09-25

Applicant: SPP Technologies Co., LTD.

Inventor： Takashi Yamamoto ,  Kazuya Ota ,  Masahiro Sasakura ,  Yasuyuki Hayashi

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32623 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32357 ,  H01J37/32458 ,  H01J37/32568 ,  H01J37/32633 ,  H01J37/32724 ,  H01J2237/0656 ,  H01J2237/15 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069 ,  H05H1/46 ,  H05H2001/4667

Abstract: The present invention relates to a substrate etching device capable of improving uniformity of in-plane density of generated plasma to uniformly etch an entire substrate surface. A plasma etching device 1 includes a chamber 2 having a plasma generation space 3 and a processing space 4 set therein, a coil 30 disposed outside an upper body portion 6, a platen 40 disposed in the processing space 4 for placing a substrate K thereon, an etching gas supply mechanism 25 supplying an etching gas into the plasma generation space 3, a coil power supply mechanism 35 supplying RF power to the coil 30, and a platen power supply mechanism 45 supplying RF power to the platen 40. Further, a tapered plasma density adjusting member 20 is fixed on an inner wall of the chamber 2 between the plasma generation space 3 and the platen 40 and, in an upper portion of the chamber 2, a cylindrical core member 10 having a tapered portion formed thereon having a diameter decreasing toward a lower end surface thereof is arranged to extend downward.

Abstract translation: 本发明涉及能够提高产生的等离子体的面内密度的均匀性以均匀地蚀刻整个基板表面的基板蚀刻装置。 等离子体蚀刻装置1包括具有等离子体产生空间3和设置在其中的处理空间4的室2，设置在上部主体部分6外侧的线圈30，设置在处理空间4中以将基板K放置在其上的压板40， 向等离子体产生空间3供给蚀刻气体的蚀刻气体供给机构25，向线圈30供给RF电力的线圈供电机构35以及向压板40供给RF电力的台板供电机构45.此外， 等离子体密度调节构件20固定在等离子体产生空间3和压板40之间的腔室2的内壁上，并且在腔室2的上部中具有形成在其上的锥形部分的圆柱形芯构件10， 朝向其下端面向下方延伸设置为向下延伸。

公开(公告)号：US20120080307A1

公开(公告)日：2012-04-05

申请号：US12898281

申请日：2010-10-05

Applicant: Ikuya Kameyama

Inventor： Ikuya Kameyama

IPC: C23C14/46

CPC classification number: C23C14/46 ,  H01J27/024 ,  H01J37/08 ,  H01J2237/0656 ,  H01J2237/083 ,  H01J2237/3146 ,  H01J2237/3151 ,  H01J2237/31701

Abstract: An ion beam system includes a grid assembly having a substantially elliptical pattern of holes to steer an ion beam comprising a plurality of beamlets to generate an ion beam, wherein the ion current density profile of a cross-section of the ion beam is non-elliptical. The ion current density profile may have a single peak that is symmetric as to one of the two orthogonal axes of the cross-section of the ion beam. Alternatively, the single peak may be asymmetric as to the other of the two orthogonal axes of the cross-section of the ion beam. In another implementation, the ion current density profile may have two peaks on opposite sides of one of two orthogonal axes of the cross-section. Directing the ion beam on a rotating destination work-piece generates a substantially uniform rotationally integrated average ion current density at each point equidistant from the center of the destination work-piece.

Abstract translation: 离子束系统包括具有大致椭圆形图案的孔的栅格组件，用于引导包括多个子束的离子束以产生离子束，其中离子束横截面的离子电流密度分布是非椭圆形的 。 离子电流密度分布可以具有与离子束的横截面的两个正交轴中的一个对称的单个峰。 或者，对于离子束的横截面的两个正交轴中的另一个，单个峰可以是不对称的。 在另一个实施方案中，离子电流密度分布可以在横截面的两个正交轴之一的相对侧上具有两个峰。 将离子束引导到旋转的目标工件上，在距离目标工件的中心等距离的点处产生基本均匀的旋转积分的平均离子电流密度。

公开(公告)号：US06528799B1

公开(公告)日：2003-03-04

申请号：US09692150

申请日：2000-10-20

Applicant: Victor Katsap ,  James A. Liddle ,  Masis Mkrtchyan ,  Stuart T. Stanton

Inventor： Victor Katsap ,  James A. Liddle ,  Masis Mkrtchyan ,  Stuart T. Stanton

IPC: H01J37063

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/065 ,  H01J37/153 ,  H01J37/3174 ,  H01J2237/0656 ,  Y10S977/881 ,  Y10S977/887

Abstract: An electron beam lithographic apparatus has an electron gun providing a beam of accelerated electrons, a mask stage adapted to hold a mask in a path of the beam of accelerated electrons, and a workpiece stage adapted to hold a workpiece in a path of electrons that have passed through the mask. The electron gun has a cathode having an electron emission surface, an anode adapted to be connected to a high-voltage power supply to provide an electric field between the cathode and the anode to accelerate electrons emitted from the cathode toward the anode, and a current-density-profile control grid disposed between the anode and the cathode. The current-density-profile control grid is configured to provide an electron gun that produces an electron beam having a non-uniform current density profile. A method of producing a micro-device includes generating a beam of charged particles having a non-uniform charged-particle current density, illuminating a mask with the beam of charged particles, and exposing a workpiece with charged particles from the beam of charged particles.

Abstract translation: 电子束光刻设备具有提供加速电子束的电子枪，适于将加速电子束的路径中的掩模保持的掩模台，以及适于将工件保持在具有 穿过面具。 电子枪具有具有电子发射表面的阴极，适于连接到高压电源的阳极，以在阴极和阳极之间提供电场，以加速从阴极向阳极发射的电子，以及电流 设置在阳极和阴极之间的密度分布控制网格。 电流密度分布控制网格被配置为提供产生具有不均匀电流密度分布的电子束的电子枪。 微型器件的制造方法包括：生成具有不均匀带电粒子电流密度的带电粒子束，用带电粒子束照射掩模，以及从带电粒子束带电的带电粒子露出工件。