Ion trap apparatus and method for manufacturing same
    30.
    发明授权
    Ion trap apparatus and method for manufacturing same 有权
    离子阱装置及其制造方法

    公开(公告)号:US09548179B2

    公开(公告)日:2017-01-17

    申请号:US14878375

    申请日:2015-10-08

    CPC classification number: H01J3/00 H01J9/14 H01J49/0013 H01J49/422

    Abstract: An ion trap device includes a substrate over which at least one central DC electrode, an RF electrode and at least one side electrode are disposed. The central DC electrode includes a DC connector pad and a DC rail connected to the DC connector pad. The RF electrode includes at least one RF rail located adjacent to the DC rail and an RF pad connected to the at least one RF rail. The RF electrode is disposed between the central DC electrode and the side electrode. At least one pair of electrodes among the central DC electrode, the RF electrode and the side electrode have round corners facing each other.

    Abstract translation: 离子阱装置包括基板,至少一个中心DC电极,RF电极和至少一个侧面电极设置在该基板上。 中心直流电极包括一个直流连接器焊盘和连接到直流连接器焊盘的直流导轨。 RF电极包括至少一个位于DC导轨附近的RF导轨和连接到至少一个RF导轨的RF焊盘。 RF电极设置在中心DC电极和侧电极之间。 中心DC电极,RF电极和侧面电极中的至少一对电极具有彼此面对的圆角。

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