公开(公告)号：US07332736B2

公开(公告)日：2008-02-19

申请号：US11014534

申请日：2004-12-16

Applicant: Sungho Jin

Inventor： Sungho Jin

IPC: H01L29/06

CPC classification number: B82Y10/00 ,  H01J1/304 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2237/0635 ,  H01J2329/00 ,  Y10S977/939

Abstract: This invention provides novel methods of fabricating novel gated field emission structures that include aligned nanowire electron emitters (individually or in small groups) localized in central regions within gate apertures. It also provides novel devices using nanoscale emitters for microwave amplifiers, electron-beam lithography, field emission displays and x-ray sources. The new emission structures are particularly useful in the new devices.

Abstract translation: 本发明提供了制造新型门控场发射结构的新方法，其包括定位在门孔内的中心区域中的排列的纳米线电子发射体（单独地或小组）。 它还提供了使用微波放大器，电子束光刻，场发射显示器和x射线源的纳米尺度发射器的新型器件。 新的发射结构在新器件中特别有用。

公开(公告)号：US20070194688A1

公开(公告)日：2007-08-23

申请号：US11676681

申请日：2007-02-20

Applicant: Sang-Hyuck AHN ,  Sang-Jo Lee ,  Sang-Ho Jeon ,  Jin-Hui Cho ,  Byung-Gil Jea ,  Su-Bong Hong

Inventor： Sang-Hyuck AHN ,  Sang-Jo Lee ,  Sang-Ho Jeon ,  Jin-Hui Cho ,  Byung-Gil Jea ,  Su-Bong Hong

IPC: H01J63/04 ,  H01J1/62

CPC classification number: H01J3/022 ,  H01J9/025 ,  H01J31/127

Abstract: An electron emission device includes a substrate, first electrodes formed on the substrate, electron emission regions electrically connected to the first electrodes, and second electrodes placed over the first electrodes such that the second electrodes are insulated from the first electrodes, The second electrodes have a plurality of openings at the crossed areas of the first and the second electrodes to open the electron emission regions, wherein 1.36≦P/D≦1.65, where D indicates the width, or diameter, of the openings of the second electrodes, and P indicates the pitch of the openings of the second electrodes.

Abstract translation: 电子发射装置包括基板，形成在基板上的第一电极，与第一电极电连接的电子发射区域和放置在第一电极上的第二电极，使得第二电极与第一电极绝缘。第二电极具有 在第一和第二电极的交叉区域处的多个开口以打开电子发射区域，其中1.36 <= P / D <= 1.65，其中D表示第二电极的开口的宽度或直径，以及 P表示第二电极的开口的间距。

公开(公告)号：US20070052338A1

公开(公告)日：2007-03-08

申请号：US11438022

申请日：2006-05-19

Applicant: Bing-Chu Du ,  Jie Tang ,  Cai-Lin Guo ,  Liang Liu ,  Zhao-Fu Hu ,  Pi-Jin Chen ,  Shou-Shan Fan

Inventor： Bing-Chu Du ,  Jie Tang ,  Cai-Lin Guo ,  Liang Liu ,  Zhao-Fu Hu ,  Pi-Jin Chen ,  Shou-Shan Fan

IPC: H01J9/02 ,  H01J1/02

CPC classification number: H01J3/022 ,  H01J31/127

Abstract: A field emission device (6), in accordance with a preferred embodiment, includes a cathode electrode (61), a gate electrode (64), a separator (62), and a number of emissive units (63) composed of an emissive material. The separator includes an insulating portion (621) and a number of conductive portions (622). The insulating portion of the separator is configured between the cathode electrode and the gate electrode for insulating the cathode electrode from the gate electrode. The emissive units are configured on the separator at positions proximate two sides of the gate electrode. The emissive units are in connection with the cathode electrode via the conductive portions respectively. The emissive units are distributed on the separator adjacent to two sides of the gate electrode, thus promotes an ability of emitting electrons from the emissive material and the emitted electrons to be guided by the gate electrode toward to a smaller spot they bombards.

Abstract translation: 根据优选实施例的场致发射器件（6）包括阴极电极（61），栅极电极（64），隔膜（62）和由发射材料构成的多个发射单元（63） 。 分离器包括绝缘部分（621）和多个导电部分（622）。 隔板的绝缘部分配置在阴极电极和栅电极之间，用于将阴极电极与栅电极绝缘。 发射单元在分离器上配置在靠近栅电极两侧的位置处。 发射单元分别经由导电部分与阴极连接。 发射单元分布在邻近栅电极的两侧的分隔板上，从而提高从发射材料发射电子的能力，并且发射的电子被栅电极引导到他们轰击的较小点。

公开(公告)号：US07161289B2

公开(公告)日：2007-01-09

申请号：US10436796

申请日：2003-05-13

Applicant: Chun-Tao Lee ,  Cheng-Chung Lee ,  Jyh-Rong Sheu ,  Yu-Yang Chang ,  Jia-Chong Ho ,  Yu-Wu Wang

Inventor： Chun-Tao Lee ,  Cheng-Chung Lee ,  Jyh-Rong Sheu ,  Yu-Yang Chang ,  Jia-Chong Ho ,  Yu-Wu Wang

IPC: H01J63/04

CPC classification number: H01J3/022 ,  H01J1/72 ,  H01J9/025

Abstract: A triode structure of a field emission display and fabrication method thereof. A plurality of cathode layers arranged in a matrix is formed overlying a dielectric layer. A plurality of emitting layers arranged in a matrix is formed overlying the cathode layers, respectively. A plurality of lengthwise-extending gate lines is formed on the dielectric layer, in which each of the gate layers is disposed between two adjacent columns of the cathode layers.

公开(公告)号：US20070003472A1

公开(公告)日：2007-01-04

申请号：US11467880

申请日：2006-08-28

Applicant: Zhidan Tolt

Inventor： Zhidan Tolt

IPC: H01J9/04 ,  D01F9/12

CPC classification number: H01J3/022 ,  B82Y10/00 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30469

Abstract: A field emission electron source includes a substrate, a first conductive electrode terminated to provide electrons, an emitting composite layer for emitting electrons, and a second electrode insulated from the emitter layer and terminated to extract electrons through vacuum space. The emitting composite layer lies between and parallel to the said first and the second electrodes, and comprises nano-structures embedded in a solid matrix. One end of the nano-structures is truncated and exposed at the surface of the emitter layer so that both the length and the apex of the nano-structure are regulated and the exposed nano-tips are kept substantially the same distance from the gate electrode. The embedding material is chosen to form triple junctions with the exposed tip to further enhance the field.

Abstract translation: 场发射电子源包括衬底，终端以提供电子的第一导电电极，用于发射电子的发射复合层，以及与发射极层绝缘并终止以通过真空空间提取电子的第二电极。 发光复合层位于并平行于所述第一和第二电极并且包括嵌入固体基质中的纳米结构。 纳米结构的一端被截短并暴露在发射极层的表面处，使得纳米结构的长度和顶点都被调节，并且暴露的纳米尖端保持与栅电极基本相同的距离。 选择嵌入材料以形成具有暴露尖端的三个连接点，以进一步增强该场。

公开(公告)号：US20060267482A1

公开(公告)日：2006-11-30

申请号：US11391447

申请日：2006-03-29

Applicant: Tae-Sik Oh

Inventor： Tae-Sik Oh

IPC: H01J63/04 ,  H01J1/62

CPC classification number: H01J3/022 ,  H01J29/481 ,  H01J31/127

Abstract: A field emission device (FED) includes an electrostatic lens structure. The FED includes: a rear substrate; a cathode electrode on the upper surface of the rear substrate; at least one group of emitters emitting electron beams and arranged in a vertical row on the upper surface of the cathode electrode; a gate electrode placed on the upper surface of the cathode electrode to extract electrons from the emitters and having horizontal first openings respectively corresponding to the emitters; a first insulating later interposed between the gate electrode and the cathode electrode; a focus electrode placed on the upper surface of the gate electrode and having a vertical second opening portion connected to the first opening portions of the corresponding group of emitters; a second insulating layer interposed between the focus electrode and the gate electrode; a front substrate disposed a predetermined distance above the rear substrate with an anode electrode on the lower surface thereof; and a fluorescent pattern formed on the lower surface of the anode electrode, emitting light when collided of the electron beams; with the gate electrode and the focus electrode forming a quadruple lens structure.

Abstract translation: 场发射装置（FED）包括静电透镜结构。 FED包括：后基板; 在后基板的上表面上的阴极电极; 发射电子束的至少一组发射体并且在阴极电极的上表面上以垂直排布置; 栅极放置在阴极电极的上表面上，以从发射器提取电子并具有分别对应于发射器的水平的第一开口; 稍后插入在栅电极和阴极之间的第一绝缘体; 聚焦电极，其放置在所述栅电极的上表面上，并且具有连接到所述相应发射体组的所述第一开口部分的垂直第二开口部分; 插入在聚焦电极和栅电极之间的第二绝缘层; 前衬底，其在所述后衬底上方设置有预定距离，在其下表面上具有阳极电极; 以及形成在阳极电极的下表面上的荧光图案，在与电子束相撞时发光; 栅电极和聚焦电极形成四重透镜结构。

公开(公告)号：US07140942B2

公开(公告)日：2006-11-28

申请号：US11213597

申请日：2005-08-26

Applicant: Randolph D. Schueller ,  Susan Hong, legal representative

Inventor： Charlie C. Hong, deceased

IPC: H01J9/02 ,  H01J1/304

CPC classification number: H01J9/025 ,  H01J3/022

Abstract: A field emission device having emitter tips and a support layer for a gate electrode is provided. Openings in the support layer and the gate layer are sized to provide mechanical support for the gate electrode. Cavities may be formed and mechanically supported by walls between cavities or columns within a cavity. Dielectric layers having openings of different sizes between the emission tips and the gate electrode can decrease leakage current between emitter tips and the gate layer. The emitter tips may comprise a carbon-based material. The device can be formed using processing operations similar to those used in conventional semiconductor device manufacturing.

公开(公告)号：US07138759B2

公开(公告)日：2006-11-21

申请号：US10789995

申请日：2004-03-02

Applicant: Masafumi Kyogaku

Inventor： Masafumi Kyogaku

IPC: H01J1/304

CPC classification number: B82Y10/00 ,  H01J1/304 ,  H01J3/022 ,  H01J2201/30469 ,  H01J2329/00

Abstract: To provide an electron-emitting device that can be used to manufacture an image forming apparatus having a superior display quality and in which the development of the abnormal light emission point is suppressed and the unevenness of brightness is not caused. The electron-emitting device includes: a cathode electrode and a gate electrode, which are formed on a base surface and opposed to each other with a space therebetween; and an electron-emitting film which is located on the cathode electrode, and in the electron-emitting device, the electron-emitting film has two end portions (A and B) in a plane substantially parallel to the base surface in a direction substantially perpendicular to a direction along which the cathode electrode and the gate electrode are opposed to each other, and a structure is used in which electric field strengths applied between each of the two end portions (A and B) of the electron-emitting film and the gate electrode are made weaker than an electric field strength applied between a region between the two end portions (A and B) of the electron-emitting film and the gate electrode at a time of driving.

Abstract translation: 为了提供一种可用于制造具有优良显示品质并且异常发光点的显影被抑制并且不会引起亮度不均匀的图像形成装置的电子发射器件。 电子发射器件包括：阴极电极和栅极电极，其形成在基底表面上并且彼此相对且间隔开; 和位于阴极电极上的电子发射膜，并且在电子发射器件中，电子发射膜在基本上垂直于基底平面的方向上具有两个端部（A和B） 到阴极电极和栅极彼此相对的方向，并且使用其中施加在电子发射膜的两个端部（A和B）中的每一个之间的电场强度和栅极的结构 使得电极比施加在驱动时电子发射膜的两个端部（A和B）与栅电极的区域之间的电场强度弱。

公开(公告)号：US07122805B2

公开(公告)日：2006-10-17

申请号：US10729839

申请日：2003-12-06

Applicant: Kurt Hoffmann

Inventor： Kurt Hoffmann

IPC: H01T23/00

CPC classification number: G09G3/22 ,  G09G3/06 ,  G09G2300/0842 ,  G09G2310/0248 ,  G09G2310/061 ,  G09G2320/0233 ,  G09G2320/0295 ,  G09G2320/043 ,  G09G2320/0693 ,  H01J3/022 ,  H01J37/073 ,  H01J37/243 ,  H01J2237/06316 ,  H01J2237/0635 ,  H01J2237/31774

Abstract: The present invention refers to a field emitter beam source (10) comprising at least one emitter (11); at least one extracting electrode (19) to extract a beam current (IE) from the emitter (11); a current source (12) for providing a predetermined beam current (IE0); a first voltage source (13) for providing a first voltage (UA) between the emitter (11) and the extracting electrode (19) to switch on the beam current (IE); and a first switch (S1) for disconnecting the first voltage source (13). With such a field emitter beam source, the emitter voltage (UE) necessary to emit a predetermined beam current (IE0) can be determined. This in turn enables the field emitter beam source (10) to generate beam current pulses with a fast rise time and a well defined beam current pulse charge Q.

Abstract translation: 本发明涉及包括至少一个发射极（11）的场致发射束源（10）。 至少一个提取电极（19），用于从发射器（11）提取射束电流（I SUB）; 用于提供预定的束电流（I OUT）的电流源（12）; 用于在所述发射极（11）和所述提取电极（19）之间提供第一电压（U SUB）的第一电压源（13）以接通所述射束电流（I SUB） SUB>）; 以及用于断开第一电压源（13）的第一开关（S SUB1＆lt; 1＆gt;）。 利用这种场致发射束源，可以确定发射预定射束电流（I E0））所需的发射极电压（U SUB）。 这又使得场发射器束源（10）能够产生具有快速上升时间和良好限定的束电流脉冲电荷Q的束电流脉冲。

公开(公告)号：US07052923B2

公开(公告)日：2006-05-30

申请号：US10931314

申请日：2004-09-01

Applicant: Kanwal K. Raina

Inventor： Kanwal K. Raina

IPC: H01L21/00 ,  H01L31/26

CPC classification number: H01J3/022

Abstract: This invention provides a conductive aluminum film and method of forming the same, wherein a non-conductive impurity is incorporated into the aluminum film. In one embodiment, the introduction of nitrogen creates an aluminum nitride subphase which pins down hillocks in the aluminum film to maintain a substantially smooth surface. The film remains substantially hillock-free even after subsequent thermal processing. The aluminum nitride subphase causes only a nominal increase in resistivity (resistivities remain below about 12 μΩ-cm), thereby making the film suitable as an electrically conductive layer for integrated circuit or display devices.

Abstract translation: 本发明提供一种导电铝膜及其形成方法，其中非导电杂质掺入铝膜中。 在一个实施方案中，引入氮产生氮化铝亚相，其将铝膜中的小丘钉下来以保持基本平滑的表面。 即使在后续的热处理之后，该膜仍然基本上无小丘状。 氮化铝次相仅导致电阻率的标称增加（电阻率保持在约12μΩ-cm以下），从而使得该膜适合作为用于集成电路或显示器件的导电层。