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    Two parallel plate electrode type dry etching apparatus
    21.
    发明授权
    Two parallel plate electrode type dry etching apparatus 失效
    两平行平板电极式干式蚀刻装置

    公开(公告)号：US5415719A

    公开(公告)日：1995-05-16

    申请号：US132822

    申请日：1993-10-07

    Applicant: Takeshi Akimoto

    Inventor： Takeshi Akimoto

    IPC: C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/00

    CPC classification number: H01J37/32211 ,  H01J37/32192 ,  H01J37/32238 ,  Y10T156/1798

    Abstract: In a plasma generating chamber, two parallel plate type electrodes are provided, and a dielectric line member is mounted on one of the electrodes. The dielectric line member is connected to a microwave oscillator, to generate gas plasma uniformly in the plasma generating chamber. A high frequency bias power supply source is connected to the other electrode.

    Abstract translation: 在等离子体发生室中，设置有两个平行板型电极，并且在一个电极上安装介质线构件。 介质线构件连接到微波振荡器，以在等离子体发生室中均匀地产生气体等离子体。 高频偏置电源连接到另一个电极。

    Method for the improved microwave deposition of thin films
    22.
    发明授权
    Method for the improved microwave deposition of thin films 失效
    改进薄膜微波沉积的方法

    公开(公告)号：US5324553A

    公开(公告)日：1994-06-28

    申请号：US89207

    申请日：1993-07-09

    Applicant: Stanford R. Ovshinsky ,  David V. Tsu ,  Rosa Young

    Inventor： Stanford R. Ovshinsky ,  David V. Tsu ,  Rosa Young

    IPC: C23C16/511 ,  C23C16/517 ,  H01J37/32 ,  B05D3/06

    CPC classification number: H01J37/32211 ,  C23C16/511 ,  C23C16/517 ,  H01J37/321 ,  H01J37/32192 ,  H01J37/32678 ,  H01J2237/3321

    Abstract: An improved chemical vapor deposition method for the high-rate low-temperature deposition of high-quality thin film material. The method includes the steps of providing an evacuated chamber having a plasma deposition region defined therein; placing a substrate inside the chamber; supplying plasma deposition precursor gases to the deposition region in the evacuated chamber; directing microwave energy from a source thereof to the deposition region, the microwave energy interacting with the deposition precursor gases to form a plasma of electrons, ions and activated electrically neutral species, the plasma including one or more depositing species; increasing the surface mobility of the depositing species in the plasma by coupling additional non-microwave electronic energy and magnetic energy into the plasma, without intentionally adding thermal energy to the substrate or precursor gas; and depositing a thin film of material onto the substrate.

    Abstract translation: 一种改进的化学气相沉积方法，用于高速低温沉积的高品质薄膜材料。 该方法包括以下步骤：提供具有限定在其中的等离子体沉积区域的真空室; 将衬底放置在腔室内; 将等离子体沉积前体气体供应到所述抽真空室中的沉积区域; 将微波能量从其源引导到沉积区域，所述微波能量与沉积前体气体相互作用以形成电子，离子和活化的电中性物质的等离子体，所述等离子体包括一种或多种沉积物质; 通过将额外的非微波电子能量和磁能耦合到等离子体中来增加沉积物质在等离子体中的表面迁移率，而无需向基底或前体气体添加热能; 以及在衬底上沉积材料薄膜。

    Plasma generation in electron cyclotron resonance
    23.
    发明授权
    Plasma generation in electron cyclotron resonance 失效
    电子回旋共振中的等离子体产生

    公开(公告)号：US4952273A

    公开(公告)日：1990-08-28

    申请号：US247416

    申请日：1988-09-21

    Applicant: Oleg A. Popov

    Inventor： Oleg A. Popov

    IPC: H01J37/32 ,  H05H1/18

    CPC classification number: H01J37/32211 ,  H01J37/32192 ,  H01J37/32678 ,  H05H1/18

    Abstract: Electron cyclotron resonance (ECR) is achieved in a source chamber of a size which is non-resonant with respect to propagation of the microwave power within the chamber. The microwaves are delivered into the chamber via a waveguide and window so that breakdown occurs initially only in a region in the vicinity of the window. A dielectric coupler between the waveguide and the window has a larger end and a smaller end and is filled with a dielectric material. The magnetic field generator for stimulation the electron resonance in the chamber includes a pair of conductive current carrying coils coaxial with each other and with an axis of the chamber, the coils being arranged in a Helmholtz configuration. The waveguide includes a microwave stub tuner for tuning the propagation and absorption of the microwave power in the plasma within the chamber to control the location and shape of the region in which the plasma is formed. A conduit provides a path for delivery of the plasma from one end of the chamber and is sized to be non-resonant with respect to propagation of the microwave energy. The magnetic field is controlled to cause the formation of the plasma with high absorption of microwave power occurring substantially within a columnar region centered on an axis of the chamber. The chamber has an insulative lining.

    Abstract translation: 电子回旋共振（ECR）在相对于室内的微波功率的传播是非谐振的尺寸的源室中实现。 微波通过波导和窗口被输送到室中，使得击穿最初仅在窗口附近的区域中发生。 波导和窗口之间的介电耦合器具有较大的端部和较小端部，并且填充有电介质材料。 用于刺激腔室中的电子共振的磁场发生器包括一对彼此同轴的导电载流线圈和腔室的轴线，线圈以亥姆霍兹（Helmholtz）构型布置。 波导包括微波短路调谐器，用于调节腔室内的等离子体中的微波功率的传播和吸收，以控制形成等离子体的区域的位置和形状。 管道提供用于从腔室的一端传送等离子体的路径，并且其尺寸被设计成相对于微波能量的传播是非共振的。 控制磁场使得等离子体的形成基本上在以腔的轴线为中心的柱状区域内产生高的微波功率吸收。 房间有绝缘衬里。

    PLASMA CHEMICAL VAPOR DEPOSITION DEVICE
    27.
    发明申请
    PLASMA CHEMICAL VAPOR DEPOSITION DEVICE 审中-公开
    等离子体化学蒸气沉积装置

    公开(公告)号：US20160376707A1

    公开(公告)日：2016-12-29

    申请号：US15188154

    申请日：2016-06-21

    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA

    Inventor： Yoji SATO ,  Takayasu SATO ,  Hiromichi NAKATA ,  Kazutaka TACHIBANA ,  Osamu ARIYADA ,  Yuji TAKANO ,  Ryo TSURUMOTO

    IPC: C23C16/513 ,  C23C16/455

    CPC classification number: C23C16/513 ,  C23C16/455 ,  H01J37/32211 ,  H01J37/32311 ,  H01J37/32577

    Abstract: A plasma chemical vapor deposition device includes a chamber, a first conductor having an elongated shape, a second conductor having a tubular shape, a high-frequency output device, and a direct-current power supply. A first connecting portion of the first conductor with the high-frequency output device and a second connecting portion of the first conductor with the direct-current power supply are both placed outside the chamber. A distance from one end of the first conductor to the first connecting portion is shorter than a distance from the one end of the first conductor to the second connecting portion. An impedance change portion is provided between the first connecting portion and the second connecting portion in the first conductor, the impedance change portion having an impedance different from an impedance between the one end of the first conductor and the first connecting portion.

    Abstract translation: 等离子体化学气相沉积装置包括腔室，具有细长形状的第一导体，具有管状形状的第二导体，高频输出装置和直流电源。 第一导体与高频输出装置的第一连接部分和具有直流电源的第一导体的第二连接部分都放置在腔室外部。 从第一导体的一端到第一连接部的距离比从第一导体的一端到第二连接部的距离短。 阻抗变化部分设置在第一导体中的第一连接部分和第二连接部分之间，阻抗变化部分具有与第一导体的一端和第一连接部分之间的阻抗不同的阻抗。

    Apparatus for plasma treatment and method for plasma treatment
    28.
    发明授权
    Apparatus for plasma treatment and method for plasma treatment 有权
    等离子体处理装置及等离子体处理方法

    公开(公告)号：US09277637B2

    公开(公告)日：2016-03-01

    申请号：US13885708

    申请日：2011-11-16

    Applicant: Toshihisa Nozawa ,  Caizhong Tian ,  Masaru Sasaki ,  Naoki Mihara ,  Naoki Matsumoto ,  Kazuki Moyama ,  Jun Yoshikawa

    Inventor： Toshihisa Nozawa ,  Caizhong Tian ,  Masaru Sasaki ,  Naoki Mihara ,  Naoki Matsumoto ,  Kazuki Moyama ,  Jun Yoshikawa

    IPC: H01L21/306 ,  H05H1/46 ,  H01J37/32

    CPC classification number: H05H1/46 ,  H01J37/32192 ,  H01J37/32211 ,  H01J37/3244

    Abstract: An apparatus for plasma treatment contains a process vessel provided with a mounting table for mounting a substrate, a first gas supplying unit configured to supply a first gas into the process vessel, a first plasma generating unit configured to convert at least a part of the first gas to a first plasma, a second gas supplying unit configured to supply a second gas into the process vessel, and a second plasma generating unit configured to convert at least a part of the second gas to a second plasma. A height of ea an inlet of the second gas from the mounting table is lower than a height of an inlet of the first gas from the mounting table.

    Abstract translation: 一种用于等离子体处理的装置，包括设置有用于安装基板的安装台的处理容器，构造成将第一气体供应到处理容器中的第一气体供给单元，第一等离子体产生单元，其被配置为将第一 第二气体供给单元，被配置为将第二气体供应到处理容器中;第二等离子体产生单元，被配置为将至少一部分第二气体转化为第二等离子体。 来自安装台的第二气体的入口的高度低于来自安装台的第一气体的入口的高度。

    PLASMA PROCESSING APPARATUS AND MICROWAVE INTRODUCTION DEVICE
    29.
    发明申请
    PLASMA PROCESSING APPARATUS AND MICROWAVE INTRODUCTION DEVICE 审中-公开
    等离子体处理装置和微波介绍装置

    公开(公告)号：US20150144265A1

    公开(公告)日：2015-05-28

    申请号：US14611728

    申请日：2015-02-02

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Yutaka Fujino ,  Atsushi Ueda ,  Shigenori Ozaki ,  Junichi Kitagawa

    IPC: H01J37/32 ,  C23C16/511

    CPC classification number: H01J37/32201 ,  C23C16/511 ,  H01J37/32211 ,  H01J37/32238 ,  H01J37/32431 ,  H05H1/46 ,  H05H2001/463

    Abstract: A plasma processing apparatus includes a microwave introduction device which introduces a microwave into a process chamber. The microwave introduction device includes a plurality of microwave transmitting plates which is fitted into a plurality of openings of a ceiling. The microwave transmitting plates are arranged on one virtual plane parallel to a mounting surface of a mounting table, with the microwave transmitting plates fitted into the respective openings. The microwave transmitting plates includes first to third microwave transmitting plates. The first to third microwave transmitting plates are arranged in such a manner that a distance between the center point of the first microwave transmitting window and the center point of the second microwave transmitting window becomes equal or approximately equal to a distance between the center point of the first microwave transmitting window and the center point of the third microwave transmitting window.

    Abstract translation: 等离子体处理装置包括将微波引入处理室的微波引入装置。 微波引入装置包括多个安装在天花板的多个开口中的微波透射板。 微波传输板布置在平行于安装台的安装表面的一个虚拟平面上，其中微波传输板安装在相应的开口中。 微波透射板包括第一至第三微波透射板。 第一至第三微波透射板以这样的方式布置，使得第一微波透射窗口的中心点与第二微波透射窗口的中心点之间的距离变为等于或近似等于第二微波透射窗口的中心点之间的距离 第一微波发射窗口和第三微波发射窗口的中心点。

    Plasma processing apparatus and microwave introduction device
    30.
    发明授权
    Plasma processing apparatus and microwave introduction device 有权
    等离子体处理装置和微波引入装置

    公开(公告)号：US08961735B2

    公开(公告)日：2015-02-24

    申请号：US13425872

    申请日：2012-03-21

    Applicant: Yutaka Fujino ,  Atsushi Ueda ,  Shigenori Ozaki ,  Junichi Kitagawa

    Inventor： Yutaka Fujino ,  Atsushi Ueda ,  Shigenori Ozaki ,  Junichi Kitagawa

    IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32 ,  H05H1/46

    CPC classification number: H01J37/32201 ,  C23C16/511 ,  H01J37/32211 ,  H01J37/32238 ,  H01J37/32431 ,  H05H1/46 ,  H05H2001/463

    Abstract: A plasma processing apparatus includes a microwave introduction device which introduces a microwave into a process chamber. The microwave introduction device includes a plurality of microwave transmitting plates which is fitted into a plurality of openings of a ceiling. The microwave transmitting plates are arranged on one virtual plane parallel to a mounting surface of a mounting table, with the microwave transmitting plates fitted into the respective openings. The microwave transmitting plates includes first to third microwave transmitting plates. The first to third microwave transmitting plates are arranged in such a manner that a distance between the center point of the first microwave transmitting window and the center point of the second microwave transmitting window becomes equal or approximately equal to a distance between the center point of the first microwave transmitting window and the center point of the third microwave transmitting window.

    Abstract translation: 等离子体处理装置包括将微波引入处理室的微波引入装置。 微波引入装置包括多个安装在天花板的多个开口中的微波透射板。 微波传输板布置在平行于安装台的安装表面的一个虚拟平面上，其中微波传输板安装在相应的开口中。 微波透射板包括第一至第三微波透射板。 第一至第三微波透射板以这样的方式布置，使得第一微波透射窗口的中心点与第二微波透射窗口的中心点之间的距离变为等于或近似等于第二微波透射窗口的中心点之间的距离 第一微波发射窗口和第三微波发射窗口的中心点。

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