公开(公告)号：US20020117110A1

公开(公告)日：2002-08-29

申请号：US10085505

申请日：2002-02-28

Inventor： William R. Rehman ,  Harry J. Lader ,  James W. Messerly

IPC: B05C005/02 ,  B05B005/025

CPC classification number: B05B1/265 ,  B05B1/02 ,  B05B1/04 ,  B05B1/042 ,  B05B5/032 ,  B05B5/04 ,  B05B5/0407 ,  B05B5/0418 ,  B05B5/0426 ,  B05B5/047 ,  B05B5/053

Abstract: A plurality of unconventional negative tribo-charging materials are described for use as the powder contact surfaces in tribocharging and corona powder spray guns, gun components, and powder delivery system components. The invention also provides a short barrel tribo-charging powder spray gun having an interchangeable powder contact insert and nozzle, with turbulence inducing air jets. The invention further provides novel tribocharging and corona gun designs. Improved powder coating systems are made possible wherein, for example, negative tribo guns can be utilized with negative corona guns to coat different parts of the same workpiece in a powder coating system.

Abstract translation: 描述了多种非常规的负摩擦充电材料用作摩擦充电和电晕粉末喷枪，枪组件和粉末输送系统部件中的粉末接触表面。 本发明还提供一种具有可互换的粉末接触插入物和喷嘴的短桶摩擦充电粉末喷枪，其具有引起空气的湍流。 本发明还提供了新颖的摩擦充电和电晕枪设计。 改进的粉末涂覆系统是可能的，其中例如可以使用负电晕枪与负电晕枪一起在粉末涂覆系统中涂覆同一工件的不同部分。

公开(公告)号：US20010014224A1

公开(公告)日：2001-08-16

申请号：US09816233

申请日：2001-03-26

Inventor： Keizo Hasebe ,  Shuuichi Nishikido ,  Nobuo Konishi ,  Takayuki Toshima ,  Kazutoshi Yoshioka

IPC: G03D005/00 ,  G03C005/00 ,  G03D007/00 ,  G03D015/02 ,  G03D015/06 ,  B05C005/02 ,  B05C009/08 ,  B05C011/08 ,  C23C016/458

CPC classification number: G03F7/162 ,  B05C11/08

Abstract: A solvent of a resist solution is dropped from a solvent supply nozzle onto the surface of a semiconductor wafer held by a spin chuck. The semiconductor wafer is rotated by the spin chuck to spread the resist solution over the entire surface of the semiconductor wafer W. Simultaneously, the resist solution is dropped from a resist solution supply nozzle onto the semiconductor wafer and spread following the solvent. During the processing, the processing space is isolated from the outer atmosphere by closing a lid of a processing vessel and a sprayed solvent is supplied into the processing space. The processing space is thus filled with the mist of solvent. In the processing space supplied with the solvent, evaporation of the solvent from the resist solution is suppressed. A film of the resist solution is formed with a uniform film thickness to the edge of the semiconductor wafer W.